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YAGUCHI Hiroyuki
| Mathematics, Electronics and Informatics Division | Professor |
| Department of Electrical Engineering,Electronics, and Applied Physics |
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Researcher information
■ Degree■ Field Of Study
- Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electric/electronic material engineering
- Nanotechnology/Materials, Crystal engineering
- Nanotechnology/Materials, Applied materials
- Natural sciences, Semiconductors, optical and atomic physics
- Apr. 1988 - Mar. 1991, University of Tokyo, Graduate School of Engineering, Department of Applied Physics
- Apr. 1986 - Mar. 1988, University of Tokyo, Graduate School of Engineering, Department of Applied Physics, Japan
- 1986, University of Tokyo, Faculty of Engineering, Department of Applied Physics, Japan
- Society
- 2018 International Conference on Solid State Devices and Materials (SSDM2018), Program Committee JJAP Special Issues Editor
- 2019 International Conference on Solid State Devices and Materials (SSDM2019), Program Committee JJAP Special Issues Editor
- 2020 International Conference on Solid State Devices and Materials (SSDM2020), Program Committee JJAP Special Issues Editor
- Society
- Society
- Mar. 2021, The 68th JSAP Spring Meeting, 2021 Poster Award, First-Principles Study of Optical Absorption Due to Band Tail States in GaPN, The Japan Society of Applied Physics
Hiroyuiki Yaguchi
24508454 - Mar. 2019, APEX/JJAP Editorial Contribution Award, The Japan Society of Applied Physics
Hiroyuki Yaguchi - Apr. 2013, APEX/JJAP Editorial Contribution Award, The Japan Society of Applied Physics
Hiroyuki Yaguchi - 1997, 2nd (1997) Young Scientist Presentation Award, Japanese Society of Applied Physics, The Japan Society of Applied Physics
Hiroyuki Yaguchi - 1995, 井上研究奨励賞
Performance information
■ Paper- Effects of Carrier Supply to the Intermediate Band by Impurity Doping on Two-Step Photocurrent Generation in GaAs:N-Based Intermediate Band Solar Cell
Md Faruk Hossain; Shuhei Yagi; Hiroyuki Yaguchi
North American Academic Research, Volume：8, Number：2, First page：112, Last page：128, Feb. 2025, [Reviewed], [Last]
English, Scientific journal
DOI：https://doi.org/10.5281/zenodo.14910609
DOI ID：10.5281/zenodo.14910609 - Analysis of two-step photocurrent generation in GaAs:N-based intermediate band solar cells with utilization of device simulation
Md Faruk Hossain; Shuhei Yagi; Hiroyuki Yaguchi
AIP Advances, Volume：15, Number：2, Feb. 2025, [Reviewed], [Last]
We developed a novel approach to analyze the two-step photocurrent generation process in intermediate band solar cells (IBSCs) by means of numerical device simulation combined with rate equation analysis. An IBSC having a GaAs:N intermediate band (IB) absorber with the same layered structure as experimentally investigated in our previous work is modeled, and its characteristic behavior of external quantum efficiency (EQE) is successfully simulated with the utilization of Silvaco-Atlas software. The simulated results gave new insights into the material parameters of the device, such as trap states and interface recombination velocity, and revealed that an electron-blocking layer adjacent to the IB absorber plays a significant role in confining the electrons in the IB state, which is the main prerequisite for efficient two-step photocurrent generation. Change in EQE (ΔEQE) induced by additional light illumination of which energy is below the valence band–IB gap is analyzed as an evaluation metric of two-step photocurrent generation based on a rate equation analysis. The integrated electron concentration in the GaAs:N absorber layer is calculated from the simulation results and is used as an input parameter for the rate equation analysis. As a result, the bias voltage-dependent ΔEQE of experimentally investigated IBSC is well reproduced, indicating that the proposed method can be a useful approach for a better understanding of IBSC operation physics and designing more efficient devices.
AIP Publishing, English, Scientific journal
DOI：https://doi.org/10.1063/5.0247676
DOI ID：10.1063/5.0247676, eISSN：2158-3226 - Differentiation between bulk and interfacial properties: analysis of time-dependent carrier injection in perovskite solar cells
Naoyuki Nishimura; Ranjan Kumar Behera; Daisuke Kubota; Hiroyuki Kanda; Kohei Yamamoto; Hiroyuki Yaguchi; Takurou N Murakami; Hiroyuki Matsuzaki
Journal of Materials Chemistry C, 2025, [Reviewed]
Perovskite solar cells (PSCs) have developed rapidly in the last decade, primarily because of improvements in their photovoltaic (PV) performance. However, methods of characterization and analysis for PSCs remain immature,...
Royal Society of Chemistry (RSC), English, Scientific journal
DOI：https://doi.org/10.1039/d5tc00534e
DOI ID：10.1039/d5tc00534e, ISSN：2050-7526, eISSN：2050-7534 - Spontaneous Heterointerface Modulation by a Methylammonium Tetrafluoroborate Additive for a Narrow-Bandgap FAPbI3 Photoabsorber in Perovskite Solar Cells
Daisuke Kubota; Ryuzi Katoh; Hiroyuki Kanda; Hiroyuki Yaguchi; Takurou N. Murakami; Naoyuki Nishimura
ACS Applied Materials & Interfaces, Volume：16, Number：40, First page：53918, Last page：53929, Sep. 2024, [Reviewed]
American Chemical Society (ACS), Scientific journal
DOI：https://doi.org/10.1021/acsami.4c11784
DOI ID：10.1021/acsami.4c11784, ISSN：1944-8244, eISSN：1944-8252 - Estimation of Junction Temperature in Single 228 nm‐Band AlGaN Far‐Ultraviolet‐C Light‐Emitting Diode on c‐Sapphire Having 1.8 mW Power and 0.32% External Quantum Efficiency
Muhammad Ajmal Khan; Mitsuhiro Muta; Kohei Fujimoto; Javier Gonzalez Rojas; Pablo Fredes; Ernesto Gramsch; Yasushi Iwaisako; Hiroyuki Yaguchi; Hideki Hirayama
physica status solidi (a), Volume：221, Number：21, May 2024, [Reviewed]
The increasing resistance of methicillin‐resistant Staphylococcusaureus to antibiotics is a major challenge faced by mankind in thehistory of medical science and according to United Nations, 700‐000 patients worldwide die every year from an infection with multidrug‐resistant organisms (MROs). Aluminum gallium nitride‐based 228 nm Far‐ultraviolet‐C (Far‐UVC) lightsources can be safely used as a germicidal application in both manned as wellas in unmanned environments against these MROs. Previously, the 228 nm Far‐UVC light‐emitting diode (LED) with emission power of 1 mW was reported by ourgroup, however, the value of external quantum efficiency (EQE) was not reportedusing conventional thick Ni (20 nm)/Au (100 nm) p‐electrode. Herein, animproved Far‐UVC LED on c‐Sapphire is attempted using a special technique in SR4000 type of metal‐organic chemical vapor deposition reactor to control the Al composition in n‐AlGaN buffer and across the 2 inch‐wafer. As a result, the light emission power of 1.8 mW and EQE of 0.32% in 228 nm Far‐UVC LED aresuccessfully achieved using very thin p‐electrode (Ni/Au). However, arelatively high junction temperature of ≈100°C around thejunction of Far‐UVC LED is observed. Finally, some simple heat‐sink modules forheat dissipation of Far‐UVC LED panel with light power of 30 mW are implemented.
Wiley, Scientific journal
DOI：https://doi.org/10.1002/pssa.202400064
DOI ID：10.1002/pssa.202400064, ISSN：1862-6300, eISSN：1862-6319 - Nitrogen Concentration Dependence of Two‐Step Photocurrent Generation by Below‐Gap Excitation in GaPN Alloys
Abdul Qayoom; Shuhei Yagi; Hiroyuki Yaguchi
physica status solidi (b), Volume：261, Number：4, Feb. 2024, [Reviewed], [Last]
Two‐step photocurrent generation and its dependence on nitrogen concentration in GaPN alloys using two‐wavelength excited photocurrent (TWEPC) measurements are investigated. External quantum efficiency (EQE) measurements show an increase in the two‐step absorption of below‐gap excitation light through tail states at longer wavelengths and that the quasi‐direct gap redshifts as the nitrogen concentration increases. The improvement in the EQE at longer wavelengths is explained by the increased density of the tail states in GaPN with higher nitrogen concentrations. In contrast, the EQE decreases at shorter wavelengths with increasing nitrogen content. TWEPC results show that differential photocurrent density , which shows the synergy effect of multiple‐wavelength light, reduces with the addition of nitrogen. It is found from rate–equation analysis that the decrease in the EQE at shorter wavelengths and in is mainly due to the increased nonradiative recombination in GaPN with higher nitrogen concentration. The use of lattice‐matched alloys and a p‐type GaP capping layer as well as the optimization of the growth conditions can improve the EQE at shorter wavelengths and .
Wiley, Scientific journal
DOI：https://doi.org/10.1002/pssb.202300369
DOI ID：10.1002/pssb.202300369, ISSN：0370-1972, eISSN：1521-3951, 共同研究・競争的資金等ID：24508454 - Two-Step Photocurrent Generation through Band Tail States in GaPN-Based Intermediate Band Solar Cells
Abdul Qayoom; Shuhei Yagi; Hiroyuki Yaguchi
North American Academic Research, Volume：6, Number：8, First page：20, Last page：31, Aug. 2023, [Reviewed], [Last]
English, Scientific journal
DOI：https://doi.org/10.5281/znodo.8300177
DOI ID：10.5281/znodo.8300177, 共同研究・競争的資金等ID：24508454 - Photocurrent enhancement by below bandgap excitation in GaPN
Abdul Qayoom; Sanjida Ferdous; Shuhei Yagi; Hiroyuki Yaguchi
Japanese Journal of Applied Physics, Volume：62, Number：SK, First page：SK1038, Last page：SK1038, May 2023, [Reviewed], [Last]
Abstract
This study presents two-wavelength excited photocurrent (TWEPC) measurements in GaP1−xNx grown by metalorganic vapor phase epitaxy. TWEPC measurements reveal that photocurrent generation is significantly enhanced when above gap excitation and below gap excitation (BGE) sources are applied simultaneously. With increasing BGE photon energy, a large increase in photocurrent is observed. The external quantum efficiency measurements show that the effect of BGE light is higher with a higher density of tail states present. The extended numerical study by rate equations reproduced the results in a good manner. Furthermore, the simulation results showed that the addition of the BGE light affects the electron occupancy as well as the electron lifetime, which is found to be 0.1 ns in this study.
IOP Publishing, Scientific journal
DOI：https://doi.org/10.35848/1347-4065/acd00c
DOI ID：10.35848/1347-4065/acd00c, ISSN：0021-4922, eISSN：1347-4065, 共同研究・競争的資金等ID：24508454 - Significant improvement of injection efficiency in deep-UV LD structures by light Mg doping in p-core layer
Yuri Itokazu; Noritoshi Maeda; Hiroyuki Yaguchi; Hideki Hirayama
Japanese Journal of Applied Physics, Apr. 2023, [Reviewed]
Scientific journal
DOI：https://doi.org/10.35848/1347-4065/acbda4
DOI ID：10.35848/1347-4065/acbda4, ORCID：129359119 - Effects of carrier-blocking barrier height on two-step photocurrent generation in dilute nitride intermediate band solar cells
Shuhei Yagi; Shun Numata; Yasushi Shoji; Yoshitaka Okada; Hiroyuki Yaguchi
Japanese Journal of Applied Physics, Volume：62, Number：SK, First page：SK1008, Last page：SK1008, Mar. 2023, [Reviewed], [Last]
Abstract
GaAs:N dilute nitride intermediate band solar cells (IBSCs) with different barrier heights for blocking electron transport from the intermediate band (IB) were prepared and the role of such an electron blocking layer (EBL) was investigated. It is found that the EBL effectively confines electrons in the IB states, and the two-step photocurrent generation process is strongly affected by its barrier height. A rate equation analysis well reproduced experimental observations of the applied voltage dependence of the two-step photocurrent generation process. It revealed that the electron extraction both from the conduction band and the IB through the EBL is governed by the thermionic emission process. To meet the requirements of an ideal IBSC, optimized device structures including the barrier height of the EBL have to be designed properly taking into account the material parameters and carrier dynamics under the actual operating condition.
IOP Publishing, Scientific journal
DOI：https://doi.org/10.35848/1347-4065/acbf5e
DOI ID：10.35848/1347-4065/acbf5e, ISSN：0021-4922, eISSN：1347-4065 - Detection of Nonradiative Recombination Centers in GaPN by Combining Two‐Wavelength Excited Photoluminescence and Time‐Resolved Photoluminescence
Sanjida Ferdous; Hiroki Iwai; Norihiko Kamata; Hiroyuki Yaguchi; Shuhei Yagi
physica status solidi (b), Volume：258, Number：11, First page：2100119, Last page：2100119, Nov. 2021, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1002/pssb.202100119
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85114326814&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85114326814&origin=inward
DOI ID：10.1002/pssb.202100119, ISSN：0370-1972, eISSN：1521-3951, SCOPUS ID：85114326814, Web of Science ID：WOS:000692804600001, 共同研究・競争的資金等ID：24508454 - Insights into Microscopic Crystal Growth Dynamics of CH3NH3PbI3 under a Laser Deposition Process Revealed by In Situ X-ray Diffraction
Tetsuhiko Miyadera; Yuto Auchi; Kohei Yamamoto; Noboru Ohashi; Tomoyuki Koganezawa; Hiroyuki Yaguchi; Yuji Yoshida; Masayuki Chikamatsu
ACS APPLIED MATERIALS & INTERFACES, Volume：13, Number：19, First page：22559, Last page：22566, May 2021, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1021/acsami.1c04488
DOI ID：10.1021/acsami.1c04488, ISSN：1944-8244, eISSN：1944-8252, Web of Science ID：WOS:000655027500046 - Influence of Laser Irradiation on the Photoluminescence Intensity of InGaAsN Quantum Wells
Md. Zamil Sultan; Shuhei Yagi; Kengo Takamiya; Hiroyuki Yaguchi; Osamu Ueda
North American Academic Research, Volume：4, Number：2, First page：240, Last page：251, Feb. 2021, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.5281/zenodo.4564429
DOI ID：10.5281/zenodo.4564429 - Photoluminescence intensity change of GaP1-xNx alloys by laser irradiation
Md. Zamil Sultan; Akinori Shiroma; Shuhei Yagi; Kengo Takamiya; Hiroyuki Yaguchi
AIP ADVANCES, Volume：10, Number：9, Sep. 2020, [Reviewed], [Last]
English, Scientific journal
DOI：https://doi.org/10.1063/5.0020793
DOI ID：10.1063/5.0020793, eISSN：2158-3226, ORCID：79669843, Web of Science ID：WOS:000567593300001, 共同研究・競争的資金等ID：24508454 - Epitaxial growth of CH3NH3PbI3 on rubrene single crystal
Tetsuhiko Miyadera; Yuto Auchi; Tomoyuki Koganezawa; Hiroyuki Yaguchi; Masayuki Chikamatsu
APL MATERIALS, Volume：8, Number：4, First page：041104, Last page：041104, Apr. 2020, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1063/1.5142307
DOI ID：10.1063/1.5142307, ISSN：2166-532X, ORCID：71441934, Web of Science ID：WOS:000523751500003 - Enhanced Strain Relaxation in AlGaN Layers Grown on Sputter-Based AlN Templates
Yosuke Mogami; Atsushi Osawa; Kazuto Ozaki; Yukitake Tanioka; Atsushi Maeoka; Yuri Itokazu; Shunsuke Kuwaba; Masafumi Jo; Noritoshi Maeda; Hiroyuki Yaguchi; Hideki Hirayama
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Volume：257, Number：4, Apr. 2020, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1002/pssb.201900590
DOI ID：10.1002/pssb.201900590, ISSN：0370-1972, eISSN：1521-3951, Web of Science ID：WOS:000508664000001 - Detection of Nonradiative Recombination Centers in GaPN (N:0.105%) by Below-Gap Excitation Light
Sanjida Ferdous; Norihiko Kamata; Shuhei Yagi; Hiroyuki Yaguchi
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Volume：257, Number：2, Feb. 2020, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1002/pssb.201900377
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85074068004&origin=inward
DOI ID：10.1002/pssb.201900377, ISSN：0370-1972, eISSN：1521-3951, ORCID：64953816, SCOPUS ID：85074068004, Web of Science ID：WOS:000489972400001, 共同研究・競争的資金等ID：24508454 - Spectral Change of E- Band Emission in a GaAs:N delta-Doped Superlattice Due to Below-Gap Excitation and Its Discrimination from Thermal Activation
Md Dulal Haque; Norihiko Kamata; A. Z. M. Touhidul Islam; Shuhei Yagi; Hiroyuki Yaguchi
JOURNAL OF ELECTRONIC MATERIALS, Volume：49, Number：2, First page：1550, Last page：1556, Feb. 2020, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1007/s11664-019-07856-6
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85075954109&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85075954109&origin=inward
DOI ID：10.1007/s11664-019-07856-6, ISSN：0361-5235, eISSN：1543-186X, ORCID：79739993, SCOPUS ID：85075954109, Web of Science ID：WOS:000500279100002 - Study of nonradiative recombination centers in GaAs:N δ-doped superlattices structures revealed by below-gap excitation light
Md. Dulal Haque; Norihiko Kamata; A. Z.M. Touhidul Islam; Md. Julkarnain; Shuhei Yagi; Hiroyuki Yaguchi; Yoshitaka Okada
5th International Conference on Computer, Communication, Chemical, Materials and Electronic Engineering, IC4ME2 2019, Jul. 2019
Institute of Electrical and Electronics Engineers Inc., English, International conference proceedings
DOI：https://doi.org/10.1109/IC4ME247184.2019.9036541
DOI ID：10.1109/IC4ME247184.2019.9036541, SCOPUS ID：85082984670 - Evolution of morphology and crystalline quality of DC-sputtered AlN films with high-temperature annealing
Yosuke Mogami; Shogo Motegi; Atsushi Osawa; Kazuto Osaki; Yukitake Tanioka; Atsushi Maeoka; Masafumi Jo; Noritoshi Maeda; Hiroyuki Yaguchi; Hideki Hirayama
JAPANESE JOURNAL OF APPLIED PHYSICS, Volume：58, Number：SC, Jun. 2019, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.7567/1347-4065/ab1066
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85070748484&origin=inward
DOI ID：10.7567/1347-4065/ab1066, ISSN：0021-4922, eISSN：1347-4065, ORCID：64953799, SCOPUS ID：85070748484, Web of Science ID：WOS:000474911400036 - Growth temperature dependence of cubic GaN step structures and cubic InN dot arrays grown on MgO (001) vicinal substrates
Kazumasa Okura; Kengo Takamiya; Shuhei Yagi; Hiroyuki Yaguchi
JAPANESE JOURNAL OF APPLIED PHYSICS, Volume：58, Number：SC, Jun. 2019, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.7567/1347-4065/ab106a
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85070734869&origin=inward
DOI ID：10.7567/1347-4065/ab106a, ISSN：0021-4922, eISSN：1347-4065, ORCID：64953806, SCOPUS ID：85070734869, Web of Science ID：WOS:000474911400059 - Photoluminescence characterization of nonradiative recombination centers in MOVPE grown GaAs:N delta-doped superlattice structure
Md Dulal Haque; Norihiko Kamata; A. Z. M. Touhidul Islam; Zentaro Honda; Shuhei Yagi; Hiroyuki Yaguchi
OPTICAL MATERIALS, Volume：89, First page：521, Last page：527, Mar. 2019, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1016/j.optmat.2019.01.047
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85061552945&origin=inward
DOI ID：10.1016/j.optmat.2019.01.047, ISSN：0925-3467, eISSN：1873-1252, ORCID：64953761, SCOPUS ID：85061552945, Web of Science ID：WOS:000465509800074 - Epitaxial growth of organolead-halide perovskite on rubrene single crystals
Y. Auchi; T. Miyadera; T. Koganezawa; H. Yaguchi; M. Chikamatsu; Y. Yoshida
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials, Sep. 2018, [Reviewed]
The Japan Society of Applied Physics, English, International conference proceedings
DOI：https://doi.org/10.7567/ssdm.2018.f-4-04
DOI ID：10.7567/ssdm.2018.f-4-04 - Effects of solvent vapor annealing on organic photovoltaics with a new type of solution-processable oligothiophene-based electronic donor material
Yuki Akiyama; Hiroaki Tachibana; Reiko Azumi; Tetsuhiko Miyadera; Masayuki Chikamatsu; Tomoyuki Koganezawa; Shuhei Yagi; Hiroyuki Yaguchi
JAPANESE JOURNAL OF APPLIED PHYSICS, Volume：57, Number：8, Aug. 2018, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.7567/JJAP.57.08RE09
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85050968954&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85050968954&origin=inward
DOI ID：10.7567/JJAP.57.08RE09, ISSN：0021-4922, eISSN：1347-4065, ORCID：56291723, SCOPUS ID：85050968954, Web of Science ID：WOS:000443891800067 - Biexciton Emission From Single Quantum-Confined Structures in N-Polar (000-1) InGaN/GaN Multiple Quantum Wells
Kengo Takamiya; Shuhei Yagi; Hiroyuki Yaguchi; Hidefumi Akiyama; Kanako Shojiki; Tomoyuki Tanikawa; Ryuji Katayama
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Volume：255, Number：5, May 2018, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1002/pssb.201700454
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85038872540&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85038872540&origin=inward
DOI ID：10.1002/pssb.201700454, ISSN：0370-1972, eISSN：1521-3951, ORCID：50444252, SCOPUS ID：85038872540, Web of Science ID：WOS:000432028400019 - Nonradiative recombination centers in GaAs:N delta-doped superlattice revealed by two-wavelength-excited photoluminescence
Md. Dulal Haque; Norihiko Kamata; Takeshi Fukuda; Zentaro Honda; Shuhei Yagi; Hiroyuki Yaguchi; Yoshitaka Okada
JOURNAL OF APPLIED PHYSICS, Volume：123, Number：16, Apr. 2018, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1063/1.5011311
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85045973191&origin=inward
DOI ID：10.1063/1.5011311, ISSN：0021-8979, eISSN：1089-7550, ORCID：48141847, SCOPUS ID：85045973191, Web of Science ID：WOS:000431147200029 - Growth of InGaAs: N delta-doped superlattices for multi-junction solar cells
Shumpei Umeda; Shuhei Yagi; Naoya Miyashita; Yoshitaka Okada; Hiroyuki Yaguchi
2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC), First page：1861, Last page：1864, 2018, [Reviewed]
English, International conference proceedings
DOI：https://doi.org/10.1109/PVSC.2018.8547315
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85059879947&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85059879947&origin=inward
DOI ID：10.1109/PVSC.2018.8547315, ISSN：2159-2330, eISSN：2159-2349, SCOPUS ID：85059879947, Web of Science ID：WOS:000469200401194 - Photoluminescence Characterization of Carrier Recombination Centers in 4H-SiC Substrates by Utilizing below Gap Excitation
Keitaro Kondo; Norihiko Kamata; Hiroyuki Yaguchi; Shuhei Yagi; Takeshi Fukuda; Zentaro Honda
Materials Science Forum, Volume：897, First page：315, Last page：318, May 2017, [Reviewed]
Trans Tech Publications, Scientific journal
DOI：https://doi.org/10.4028/www.scientific.net/msf.897.315
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85020048562&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85020048562&origin=inward
DOI ID：10.4028/www.scientific.net/msf.897.315, ISSN：1662-9752, eISSN：1662-9752, ORCID：48141472, SCOPUS ID：85020048562 - Self-organized growth of cubic InN dot arrays on cubic GaN using MgO (001) vicinal substrates
Kenichi Ishii; Shuhei Yagi; Hiroyuki Yaguchi
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Volume：254, Number：2, Feb. 2017, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1002/pssb.201600542
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85000938311&origin=inward
DOI ID：10.1002/pssb.201600542, ISSN：0370-1972, eISSN：1521-3951, ORCID：48141861, SCOPUS ID：85000938311, Web of Science ID：WOS:000394614300028 - Spectral change of intermediate band luminescence in GaP:N due to below-gap excitation: Discrimination from thermal activation
Kamata, N.; Suetsugu, M.; Haque, D.; Yagi, S.; Yaguchi, H.; Karlsson, F.; Holtz, P.O.
Physica Status Solidi (B) Basic Research, Volume：254, Number：2, 2017, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1002/pssb.201600566
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85003749566&origin=inward
DOI ID：10.1002/pssb.201600566, ISSN：0370-1972, eISSN：1521-3951, ORCID：48141829, SCOPUS ID：85003749566, Web of Science ID：WOS:000394614300035 - Growth of InN/GaN dots on 4H-SiC(0001) 4° off vicinal substrates by molecular beam epitaxy
Shuhei Yagi; Hiroyuki Yaguchi; Keisuke Matsuoka
Journal of Crystal Growth, Volume：477, First page：201, Last page：206, 2017, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1016/J.JCRYSGRO.2017.05.021
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85020105871&origin=inward
DOI ID：10.1016/J.JCRYSGRO.2017.05.021, ISSN：0022-0248, eISSN：1873-5002, ORCID：56291782, SCOPUS ID：85020105871, Web of Science ID：WOS:000413646100043 - Self-Organized Growth of Cubic InN Dot Arrays on MgO (001) Vicinal Substrates
Kenichi Ishii; Shuhei Yagi; Hiroyuki Yaguchi
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), 2016, [Reviewed]
English, International conference proceedings
DOI：https://doi.org/10.1109/ICIPRM.2016.7528673
DOI ID：10.1109/ICIPRM.2016.7528673, ORCID：56291759, Web of Science ID：WOS:000392285400156 - Optical Characterization of Carrier Recombination Processes in GaPN by Two-Wavelength Excited Photoluminescence
Makiko Suetsugu; Norihiko Kamata; Shuhei Yagi; Hiroyuki Yaguchi; Takeshi Fukuda; Fredrik Karlsson; Per-Olof Holts
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), 2016, [Reviewed]
English, International conference proceedings
DOI：https://doi.org/10.1109/ICIPRM.2016.7528672
DOI ID：10.1109/ICIPRM.2016.7528672, ORCID：56291722, Web of Science ID：WOS:000392285400155 - Two-Wavelength Excited Photoluminescence in 4H-SiC Substrate -Dependence on BGE Power Density-
Keitaro Kondo; Norihiko Kamata; Shuhei Yagi; Hiroyuki Yaguchi; Takeshi Fukuda; Zentaro Honda
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), 2016, [Reviewed]
English, International conference proceedings
DOI：https://doi.org/10.1109/ICIPRM.2016.7528594
DOI ID：10.1109/ICIPRM.2016.7528594, ORCID：56291772, Web of Science ID：WOS:000392285400077 - Molecular beam epitaxial growth of intermediate-band materials based on GaAs: N delta-doped superlattices
Tomoya Suzuki; Kazuki Osada; Shuhei Yagi; Shunya Naitoh; Yasushi Shoji; Yasuto Hijikata; Yoshitaka Okada; Hiroyuki Yaguchi
JAPANESE JOURNAL OF APPLIED PHYSICS, Volume：54, Number：8, First page：08KA07, Aug. 2015, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.7567/JJAP.54.08KA07
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84938504709&origin=inward
DOI ID：10.7567/JJAP.54.08KA07, ISSN：0021-4922, eISSN：1347-4065, ORCID：64953767, SCOPUS ID：84938504709, Web of Science ID：WOS:000358662900008 - Control of intermediate-band configuration in GaAs: N delta-doped superlattice
Kazuki Osada; Tomoya Suzuki; Shuhei Yagi; Shunya Naitoh; Yasushi Shoji; Yasuto Hijikata; Yoshitaka Okada; Hiroyuki Yaguchi
JAPANESE JOURNAL OF APPLIED PHYSICS, Volume：54, Number：8, First page：08KA04, Aug. 2015, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.7567/JJAP.54.08KA04
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84938516127&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84938516127&origin=inward
DOI ID：10.7567/JJAP.54.08KA04, ISSN：0021-4922, eISSN：1347-4065, ORCID：56291671, SCOPUS ID：84938516127, Web of Science ID：WOS:000358662900005 - Growth temperature dependence of the surface segregation of Er atoms in GaAs during molecular beam epitaxy
Ri Guo Jin; Shuhei Yagi; Yasuto Hijikata; Hiroyuki Yaguchi
JAPANESE JOURNAL OF APPLIED PHYSICS, Volume：54, Number：5, First page：051201, May 2015, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.7567/JJAP.54.051201
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84983072013&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84983072013&origin=inward
DOI ID：10.7567/JJAP.54.051201, ISSN：0021-4922, eISSN：1347-4065, ORCID：56291658, SCOPUS ID：84983072013, Web of Science ID：WOS:000354980300009, 共同研究・競争的資金等ID：11611368 - Differences in SiC thermal oxidation process between crystalline surface orientations observed by in-situ spectroscopic ellipsometry
Daisuke Goto; Yasuto Hijikata; Shuhei Yagi; Hiroyuki Yaguchi
JOURNAL OF APPLIED PHYSICS, Volume：117, Number：9, First page：095306, Mar. 2015, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1063/1.4914050
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84924310120&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84924310120&origin=inward
DOI ID：10.1063/1.4914050, ISSN：0021-8979, eISSN：1089-7550, ORCID：56291706, SCOPUS ID：84924310120, Web of Science ID：WOS:000351134400041 - Photoluminescence Study of Oxidation-Induced Stacking Faults in 4H-SiC Epilayers
Miyano, Y; Yagi, S; Hijikata, Y; Yaguchi, H
Materials Science Forum, Volume：821-823, First page：327, Last page：330, 2015, [Reviewed]
Trans Tech Publications, Scientific journal
DOI：https://doi.org/10.4028/www.scientific.net/MSF.821-823.327
DOI ID：10.4028/www.scientific.net/MSF.821-823.327, ISSN：1662-9752, ORCID：50444258 - Surface orientation dependence of SiC oxidation process studied by in-situ spectroscopic ellipsometry
Goto, D.; Yagi, S.; Hijikata, Y.; Yaguchi, H.
Materials Science Forum, Volume：821-823, First page：371, Last page：374, 2015, [Reviewed]
Materials Science Forum, Scientific journal
DOI：https://doi.org/10.4028/www.scientific.net/MSF.821-823.371
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84950341587&origin=inward
DOI ID：10.4028/www.scientific.net/MSF.821-823.371, ISSN：0255-5476, eISSN：1662-9752, ORCID：64953813, SCOPUS ID：84950341587 - Microstructures of InN film on 4H-SiC (0001) substrate grown by RF-MBE
P. Limsuwan; H. Yaguchi; M. Orihara; S. Sanorpim; P. Jantawongrit
Journal of Semiconductors, Volume：36, Number：8, 2015, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1088/1674-4926/36/8/083002
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84940094786&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84940094786&origin=inward
DOI ID：10.1088/1674-4926/36/8/083002, ISSN：1674-4926, ORCID：56291719, SCOPUS ID：84940094786, Web of Science ID：WOS:000218443900007 - Photoluminescence study of oxidation-induced faults in 4H-SiC epilayers
Miyano, Y.; Asafuji, R.; Yagi, S.; Hijikata, Y.; Yaguchi, H.
AIP Advances, Volume：5, Number：12, First page：127116, 2015, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1063/1.4938126
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84952672264&origin=inward
DOI ID：10.1063/1.4938126, ISSN：2158-3226, eISSN：2158-3226, ORCID：64953793, SCOPUS ID：84952672264, Web of Science ID：WOS:000367596300016 - Enhanced optical absorption due to E+-related band transition in GaAs:N delta-doped superlattices
Shuhei Yagi; Shunsuke Noguchi; Yasuto Hijikata; Shigeyuki Kuboya; Kentaro Onabe; Yoshitaka Okada; Hiroyuki Yaguchi
APPLIED PHYSICS EXPRESS, Volume：7, Number：10, Oct. 2014, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.7567/APEX.7.102301
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84988891884&origin=inward
DOI ID：10.7567/APEX.7.102301, ISSN：1882-0778, eISSN：1882-0786, ORCID：48141835, SCOPUS ID：84988891884, Web of Science ID：WOS:000344439300007 - Photoreflectance study of the temperature dependence of excitonic transitions in dilute GaAsN alloys
Wataru Okubo; Shuhei Yagi; Yasuto Hijikata; Kentaro Onabe; Hiroyuki Yaguchi
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Volume：211, Number：4, First page：752, Last page：755, Apr. 2014, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1002/pssa.201300462
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84897986009&origin=inward
DOI ID：10.1002/pssa.201300462, ISSN：1862-6300, eISSN：1862-6319, ORCID：56291616, SCOPUS ID：84897986009, Web of Science ID：WOS:000333911800006, 共同研究・競争的資金等ID：11611368 - Si emission into the oxide layer during oxidation of silicon carbide
Yurie Akasaka; Yasuto Hijikata; Shuhei Yagi; HIROYUKI YAGUCHI
Materials Science Forum, Volume：778-780, First page：553, Last page：556, 2014, [Reviewed]
Scientific journal
DOI：https://doi.org/10.4028/WWW.SCIENTIFIC.NET/MSF.778-780.553
DOI ID：10.4028/WWW.SCIENTIFIC.NET/MSF.778-780.553, ISSN：1662-9752, ORCID：56291610, Web of Science ID：WOS:000336634100130 - First-principles study on the conduction band electron states of GaAsN alloys
Kei Sakamoto; Hiroyuki Yaguchi
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, Volume：11, Number：3-4, First page：911, Last page：913, 2014, [Reviewed]
English, International conference proceedings
DOI：https://doi.org/10.1002/pssc.201300531
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84898548200&origin=inward
DOI ID：10.1002/pssc.201300531, ISSN：1862-6351, eISSN：1610-1642, ORCID：64953783, SCOPUS ID：84898548200, Web of Science ID：WOS:000346071300134, 共同研究・競争的資金等ID：11611368 - Conversion Efficiency of Intermediate Band Solar Cells with GaAs:N delta-Doped Superlattices
Shuhei Yagi; Shunsuke Noguchi; Yasuto Hijikata; Shigeyuki Kuboya; Kentaro Onabe; Hiroyuki Yaguchi
JAPANESE JOURNAL OF APPLIED PHYSICS, Volume：52, Number：10, Oct. 2013, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.7567/JJAP.52.102302
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84887232116&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84887232116&origin=inward
DOI ID：10.7567/JJAP.52.102302, ISSN：0021-4922, eISSN：1347-4065, ORCID：30384763, SCOPUS ID：84887232116, Web of Science ID：WOS:000325209000024 - Analysis of Electronic Structures of Nitrogen delta-Doped GaAs Superlattices for High Efficiency Intermediate Band Solar Cells
Shunsuke Noguchi; Shuhei Yagi; Daisuke Sato; Yasuto Hijikata; Kentaro Onabe; Shigeyuki Kuboya; Hiroyuki Yaguchi
IEEE JOURNAL OF PHOTOVOLTAICS, Volume：3, Number：4, First page：1287, Last page：1291, Oct. 2013, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1109/JPHOTOV.2013.2271978
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84884672481&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84884672481&origin=inward
DOI ID：10.1109/JPHOTOV.2013.2271978, ISSN：2156-3381, eISSN：2156-3403, ORCID：30384761, SCOPUS ID：84884672481, Web of Science ID：WOS:000324881400023 - Direct Evidence of Carrier Excitation from Intermediate Band States in GaPN by Two-Wavelength Excited Photoluminescence
Abu Zafor Muhammad Touhidul Islam; Tsukasa Hanaoka; Kentaro Onabe; Shuhei Yagi; Norihiko Kamata; Hiroyuki Yaguchi
APPLIED PHYSICS EXPRESS, Volume：6, Number：9, Sep. 2013, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.7567/APEX.6.092401
DOI ID：10.7567/APEX.6.092401, ISSN：1882-0778, eISSN：1882-0786, Web of Science ID：WOS:000324494100020 - RF-MBE growth of cubic InN nano-scale dots on cubic GaN
Junichiro Suzuki; Misao Orihara; Shuhei Yagi; Yasuto Hijikata; Hiroyuki Yaguchi
JOURNAL OF CRYSTAL GROWTH, Volume：378, First page：454, Last page：458, Sep. 2013, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1016/j.jcrysgro.2012.12.050
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84885434999&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84885434999&origin=inward
DOI ID：10.1016/j.jcrysgro.2012.12.050, ISSN：0022-0248, eISSN：1873-5002, ORCID：30384771, SCOPUS ID：84885434999, Web of Science ID：WOS:000323355900113 - Molecular beam epitaxy of ErGaAs alloys on GaAs (001) substrates
Ri Guo Jin; Shuhei Yagi; Yasuto Hijikata; Shigeyuki Kuboya; Kentaro Onabe; Ryuji Katayama; Hiroyuki Yaguchi
JOURNAL OF CRYSTAL GROWTH, Volume：378, First page：85, Last page：87, Sep. 2013, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1016/j.jcrysgro.2012.12.043
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84885427998&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84885427998&origin=inward
DOI ID：10.1016/j.jcrysgro.2012.12.043, ISSN：0022-0248, ORCID：30384766, SCOPUS ID：84885427998, Web of Science ID：WOS:000323355900023 - Direct evidence of carrier excitation from intermediate band states in GaPN by two-wavelength excited photoluminescence
Abu Zafor Muhammad Touhidul Islam; Tsukasa Hanaoka; Kentaro Onabe; Shuhei Yagi; Norihiko Kamata; Hiroyuki Yaguchi
Applied Physics Express, Volume：6, Number：9, First page：3, Sep. 2013, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.7567/APEX.6.092401
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84883664354&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84883664354&origin=inward
DOI ID：10.7567/APEX.6.092401, ISSN：1882-0778, eISSN：1882-0786, ORCID：30384764, SCOPUS ID：84883664354, Web of Science ID：WOS:000324494100020 - Observation of optical spin injection into Ge-based structures at room temperature
Yuhsuke Yasutake; Shuhei Hayashi; Hiroyuki Yaguchi; Susumu Fukatsu
APPLIED PHYSICS LETTERS, Volume：102, Number：24, Jun. 2013, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1063/1.4811495
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84879811389&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84879811389&origin=inward
DOI ID：10.1063/1.4811495, ISSN：0003-6951, ORCID：30384767, SCOPUS ID：84879811389, Web of Science ID：WOS:000320962400045 - Optical properties and carrier dynamics in asymmetric coupled ingan multiple quantum wells
Guo En Weng; Bao Ping Zhang; Ming Ming Liang; Xue Qin Lv; Jiang Yong Zhang; Lei Ying Ying; Zhi Ren Qiu; H. Yaguchi; S. Kuboya; K. Onabe; Shao Qiang Chen; H. Akiyama
Functional Materials Letters, Volume：6, Number：2, First page：5, Apr. 2013, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1142/S1793604713500215
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84876756647&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84876756647&origin=inward
DOI ID：10.1142/S1793604713500215, ISSN：1793-6047, eISSN：1793-7213, ORCID：30384769, SCOPUS ID：84876756647, Web of Science ID：WOS:000319747700012 - Stacked structure of self-organized cubic InN nano-dots grown by molecular beam epitaxy
Shuhei Yagi; Junichiro Suzuki; Misao Orihara; Yasuto Hijikata; Hiroyuki Yaguchi
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11, Volume：10, Number：11, First page：1545, Last page：1548, 2013, [Reviewed]
English, International conference proceedings
DOI：https://doi.org/10.1002/pssc.201300275
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84887619549&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84887619549&origin=inward
DOI ID：10.1002/pssc.201300275, ISSN：1862-6351, eISSN：1610-1642, ORCID：30384772, SCOPUS ID：84887619549, Web of Science ID：WOS:000334583400049 - RF-MBE growth of cubic AlN on MgO (001) substrates via 2-step c-GaN buffer layer
M. Kakuda; S. Morikawa; S. Kuboya; R. Katayama; H. Yaguchi; K. Onabe
Journal of Crystal Growth, Volume：378, First page：307, Last page：309, 2013, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1016/j.jcrysgro.2012.12.120
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84885422048&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84885422048&origin=inward
DOI ID：10.1016/j.jcrysgro.2012.12.120, ISSN：0022-0248, ORCID：30384770, SCOPUS ID：84885422048, Web of Science ID：WOS:000323355900078 - Optical Absorption by E+ Miniband of GaAs:N delta-Doped Superlattices
Shuhei Yagi; Shunsuke Noguchi; Yasuto Hijikata; Shigeyuki Kuboya; Kentaro Onabe; Yoshitaka Okada; Hiroyuki Yaguchi
2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), First page：2490, Last page：2493, 2013, [Reviewed]
English, International conference proceedings
DOI：https://doi.org/10.1109/PVSC.2013.6744981
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84896474240&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84896474240&origin=inward
DOI ID：10.1109/PVSC.2013.6744981, ISSN：0160-8371, ORCID：30384768, SCOPUS ID：84896474240, Web of Science ID：WOS:000340054100565 - Model calculations of SiC oxide growth rates at sub-atmospheric pressures using the Si and C emission model
Yasuto Hijikata; Shuhei Yagi; Hiroyuki Yaguchi; Sadafumi Yoshida
SILICON CARBIDE AND RELATED MATERIALS 2012, Volume：740-742, First page：833, Last page：+, 2013, [Reviewed]
English, International conference proceedings
DOI：https://doi.org/10.4028/www.scientific.net/MSF.740-742.833
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84874076989&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84874076989&origin=inward
DOI ID：10.4028/www.scientific.net/MSF.740-742.833, ISSN：0255-5476, ORCID：30384765, SCOPUS ID：84874076989, Web of Science ID：WOS:000319785500198 - Biexciton emission from single isoelectronic traps formed by nitrogen-nitrogen pairs in GaAs
Kengo Takamiya; Toshiyuki Fukushima; Shuhei Yagi; Yasuto Hijikata; Toshimitsu Mochizuki; Masahiro Yoshita; Hidefumi Akiyama; Shigeyuki Kuboya; Kentaro Onabe; Ryuji Katayama; Hiroyuki Yaguchi
AIP Conference Proceedings, Volume：1566, First page：538, Last page：+, 2013
English, International conference proceedings
DOI：https://doi.org/10.1063/1.4848523
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84907305933&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84907305933&origin=inward
DOI ID：10.1063/1.4848523, ISSN：0094-243X, eISSN：1551-7616, ORCID：30384762, SCOPUS ID：84907305933, Web of Science ID：WOS:000331793000268, 共同研究・競争的資金等ID：11611368 - Biexciton Luminescence from Individual Isoelectronic Traps in Nitrogen delta-Doped GaAs
Kengo Takamiya; Toshiyuki Fukushima; Shuhei Yagi; Yasuto Hijikata; Toshimitsu Mochizuki; Masahiro Yoshita; Hidefumi Akiyama; Shigeyuki Kuboya; Kentaro Onabe; Ryuji Katayama; Hiroyuki Yaguchi
APPLIED PHYSICS EXPRESS, Volume：5, Number：11, First page：3, Nov. 2012, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1143/APEX.5.111201
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84869186070&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84869186070&origin=inward
DOI ID：10.1143/APEX.5.111201, ISSN：1882-0778, eISSN：1882-0786, ORCID：30384774, SCOPUS ID：84869186070, Web of Science ID：WOS:000310867800003, 共同研究・競争的資金等ID：11611368 - Oxygen partial pressure dependence of the SiC oxidation process studied by in-situ spectroscopic ellipsometry
Keiko Kouda; Yasuto Hijikata; Shuhei Yagi; Hiroyuki Yaguchi; Sadafumi Yoshida
JOURNAL OF APPLIED PHYSICS, Volume：112, Number：2, First page：6, Jul. 2012, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1063/1.4736801
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84865484968&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84865484968&origin=inward
DOI ID：10.1063/1.4736801, ISSN：0021-8979, eISSN：1089-7550, ORCID：30384777, SCOPUS ID：84865484968, Web of Science ID：WOS:000308424500114 - Micro-Photoluminescence Study on the Influence of Oxidation on Stacking Faults in 4H-SiC Epilayers
Hikaru Yamagata; Shuhei Yagi; Yasuto Hijikata; Hiroyuki Yaguchi
APPLIED PHYSICS EXPRESS, Volume：5, Number：5, First page：3, Last page：051302, May 2012, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1143/APEX.5.051302
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84861398046&origin=inward
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DOI ID：10.1143/APEX.5.051302, ISSN：1882-0778, eISSN：1882-0786, ORCID：30384776, SCOPUS ID：84861398046, Web of Science ID：WOS:000303932500005 - Tem analysis of structural phase transition in MBE grown cubic InN on MgO (001) by MBE: Effect of hexagonal phase inclusion in an c-gan nucleation layer
Jamreonta Parinyataramas; Sakuntam Sanorpim; Chanchana Thanachayanont; Hiroyuki Yaguchi; Misao Orihara
Applied Mechanics and Materials, Volume：229-231, First page：219, Last page：222, 2012, [Reviewed]
International conference proceedings
DOI：https://doi.org/10.4028/www.scientific.net/AMM.229-231.219
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DOI ID：10.4028/www.scientific.net/AMM.229-231.219, ISSN：1660-9336, eISSN：1662-7482, ORCID：30384780, SCOPUS ID：84871375602 - Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide
Kengo Takamiya; Yuta Endo; Toshiyuki Fukushima; Shuhei Yagi; Yasuto Hijikata; Toshimitsu Mochizuki; Masahiro Yoshita; Hidefumi Akiyama; Shigeyuki Kuboya; Kentaro Onabe; Ryuji Katayama; Hiroyuki Yaguchi
THERMEC 2011, PTS 1-4, Volume：706-709, First page：2916, Last page：+, 2012, [Reviewed]
English, International conference proceedings
DOI：https://doi.org/10.4028/www.scientific.net/MSF.706-709.2916
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84856180201&origin=inward
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DOI ID：10.4028/www.scientific.net/MSF.706-709.2916, ISSN：0255-5476, ORCID：30384779, SCOPUS ID：84856180201, Web of Science ID：WOS:000308517301220, 共同研究・競争的資金等ID：11611368 - RF-MBE growth of semipolar InN(10-13) and InGaN(10-13) on GaAs(110)
Misao Orihara; Shuhei Yagi; Yasuto Hijikata; Hiroyuki Yaguchi
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, Volume：9, Number：3-4, First page：658, Last page：661, 2012, [Reviewed]
English, International conference proceedings
DOI：https://doi.org/10.1002/pssc.201100365
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84858842029&origin=inward
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DOI ID：10.1002/pssc.201100365, ISSN：1862-6351, eISSN：1610-1642, ORCID：30384778, SCOPUS ID：84858842029, Web of Science ID：WOS:000306521600059 - Influence of off-cut angle of (0001) 4H-SiC on the crystal quality of InN grown by RF-MBE
P. Jantawongrit; S. Sanorpim; H. Yaguchi; M. Orihara; P. Limsuwan
Procedia Engineering, Volume：32, First page：882, Last page：887, 2012, [Reviewed]
English, International conference proceedings
DOI：https://doi.org/10.1016/j.proeng.2012.02.027
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84892615166&origin=inward
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DOI ID：10.1016/j.proeng.2012.02.027, ISSN：1877-7058, ORCID：30384775, SCOPUS ID：84892615166, Web of Science ID：WOS:000393153200127 - Analysis of the Energy Structure of Nitrogen delta-Doped GaAs Superlattices for High Efficiency Intermediate Band Solar Cells
Shunsuke Noguchi; Shuhei Yagi; Yasuto Hijikata; Kentaro Onabe; Shigeyuki Kuboya; Hiroyuki Yaguchi
2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), First page：83, Last page：86, 2012, [Reviewed]
English, International conference proceedings
DOI：https://doi.org/10.1109/PVSC.2012.6317573
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DOI ID：10.1109/PVSC.2012.6317573, ISSN：0160-8371, ORCID：30384773, SCOPUS ID：84869429937, Web of Science ID：WOS:000309917800019 - Quantum well double barrier resonant tunneling structures for selective contacts of hot carrier solar cells
Shuhei Yagi; Yasuto Hijikata; Yoshitaka Okada; Hiroyuki Yaguchi
Conference Record of the IEEE Photovoltaic Specialists Conference, First page：003309, Last page：003312, 2011, [Reviewed]
International conference proceedings
DOI：https://doi.org/10.1109/PVSC.2011.6186646
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84861083769&origin=inward
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DOI ID：10.1109/PVSC.2011.6186646, ISSN：0160-8371, ORCID：56291629, SCOPUS ID：84861083769 - Theoretical studies for Si and C emission into SiC layer during oxidation
Yasuto Hijikata; Hiroyuki Yaguchi; Sadafumi Yoshida
SILICON CARBIDE AND RELATED MATERIALS 2010, Volume：679-680, First page：429, Last page：+, 2011, [Reviewed]
English, International conference proceedings
DOI：https://doi.org/10.4028/www.scientific.net/MSF.679-680.429
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DOI ID：10.4028/www.scientific.net/MSF.679-680.429, ISSN：0255-5476, ORCID：30384784, SCOPUS ID：79955121573, Web of Science ID：WOS:000291673500102 - Single photon emission from nitrogen delta-doped semiconductors
Hiroyuki Yaguchi
QUANTUM SENSING AND NANOPHOTONIC DEVICES VIII, Volume：7945, First page：79452F, Last page：79452F, 2011, [Reviewed]
English, International conference proceedings
DOI：https://doi.org/10.1117/12.865770
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=79955781808&origin=inward
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DOI ID：10.1117/12.865770, ISSN：0277-786X, ORCID：30384783, SCOPUS ID：79955781808, Web of Science ID：WOS:000293695800066 - High cubic-phase purity InN on MgO (001) using cubic-phase GaN as a buffer layer
S. Sanorpim; S. Kuntharin; J. Parinyataramas; H. Yaguchi; Y. Iwahashi; M. Orihara; Y. Hijikata; S. Yoshida
AIP Conference Proceedings, Volume：1399, First page：131, Last page：132, 2011, [Reviewed]
English, International conference proceedings
DOI：https://doi.org/10.1063/1.3666291
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84855479154&origin=inward
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DOI ID：10.1063/1.3666291, ISSN：0094-243X, eISSN：1551-7616, ORCID：30384782, SCOPUS ID：84855479154, Web of Science ID：WOS:000301053000053 - Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(1 1 1)A
T. Fukushima; Y. Hijikata; H. Yaguchi; S. Yoshida; M. Okano; M. Yoshita; H. Akiyama; S. Kuboya; R. Katayama; K. Onabe
Physica E: Low-Dimensional Systems and Nanostructures, Volume：42, Number：10, First page：2529, Last page：2531, Sep. 2010, [Reviewed]
English, International conference proceedings
DOI：https://doi.org/10.1016/j.physe.2009.12.011
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=77958003985&origin=inward
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DOI ID：10.1016/j.physe.2009.12.011, ISSN：1386-9477, eISSN：1873-1759, ORCID：30384787, SCOPUS ID：77958003985, Web of Science ID：WOS:000284723200013 - RF-MBE growth of InN on 4H-SiC (0001) with off-angles
Misao Orihara; Shin Takizawa; Takanori Sato; Yuuki Ishida; Sadafumi Yoshida; Yasuto Hijikata; Hiroyuki Yaguchi
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8, Volume：7, Number：7-8, First page：2016, Last page：2018, 2010, [Reviewed]
English, International conference proceedings
DOI：https://doi.org/10.1002/pssc.200983441
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=77955823769&origin=inward
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DOI ID：10.1002/pssc.200983441, ISSN：1862-6351, eISSN：1610-1642, ORCID：30384788, SCOPUS ID：77955823769, Web of Science ID：WOS:000301587600083 - Model calculations of SiC oxide growth rate at various oxidation temperatures based on the silicon and carbon emission model
Hijikata Yasuto; Yaguchi Hiroyuki; Yoshida Sadafumi
Materials Science Forum, Volume：645-648, First page：809, Last page：812, 2010, [Reviewed]
Scientific journal
DOI：https://doi.org/10.4028/www.scientific.net/MSF.645-648.809
DOI ID：10.4028/www.scientific.net/MSF.645-648.809, ISSN：0255-5476, ORCID：30384786, Web of Science ID：WOS:000279657600192 - In-situ Spectroscopic Ellipsometry Study of SiC Oxidation at Low Oxygen-Partial-Pressures
K. Kouda; Y. Hijikata; H. Yaguchi; S. Yoshida
SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, Volume：645-648, First page：813, Last page：+, 2010, [Reviewed]
English, International conference proceedings
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DOI ID：10.4028/www.scientific.net/MSF.645-648.813, ISSN：0255-5476, ORCID：30384785, Web of Science ID：WOS:000279657600193 - Optical and electrical characterizations of 4H-SiC-oxide interfaces by spectroscopic ellipsometry and capacitance-voltage measurements
Hashimoto Hideki; Hijikata Yasuto; Yaguchi Hiroyuki; Yoshida Sadafumi
Applied Surface Science, Volume：255, Number：20, First page：8648, Last page：8653, Jul. 2009, [Reviewed]
Scientific journal
DOI：https://doi.org/10.1016/j.apsusc.2009.06.058
DOI ID：10.1016/j.apsusc.2009.06.058, ISSN：0169-4332, ORCID：30384794, Web of Science ID：WOS:000268123800057 - A Kinetic Model of Silicon Carbide Oxidation Based on the Interfacial Silicon and Carbon Emission Phenomenon
Hijikata Yasuto; Yaguchi Hiroyuki; Yoshida Sadafumi
Applied Physics Express, Volume：2, Number：2, First page：021203, Last page：021203, Feb. 2009, [Reviewed]
Scientific journal
DOI：https://doi.org/10.1143/APEX.2.021203
DOI ID：10.1143/APEX.2.021203, ISSN：1882-0778, ORCID：30384789, Web of Science ID：WOS:000264942800007 - Model Calculation of SiC Oxidation Rates in the Thin Oxide Regime
Yasuto Hijikata; Takeshi Yamamoto; Hiroyuki Yaguchi; Sadafumi Yoshida
SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, Volume：600-603, First page：663, Last page：666, 2009, [Reviewed]
English, International conference proceedings
DOI：https://doi.org/10.4028/www.scientific.net/MSF.600-603.663
DOI ID：10.4028/www.scientific.net/MSF.600-603.663, ISSN：0255-5476, ORCID：48141545, Web of Science ID：WOS:000263555300158 - Oxygen-Partial-Pressure Dependence of SiC Oxidation Rate Studied by In-situ Spectroscopic Ellipsometry
Takeshi Yamamoto; Yasuto Hijikata; Hiroyuki Yaguchi; Sadafumi Yoshida
SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, Volume：600-603, First page：667, Last page：670, 2009, [Reviewed]
English, International conference proceedings
DOI：https://doi.org/10.4028/www.scientific.net/MSF.600-603.667
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=60349127717&origin=inward
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DOI ID：10.4028/www.scientific.net/MSF.600-603.667, ISSN：0255-5476, ORCID：48141546, SCOPUS ID：60349127717, Web of Science ID：WOS:000263555300159 - Observation of SiC Oxidation in Ultra-thin Oxide Regime by In-situ Spectroscopic Ellipsometry
Toshiyuki Takaku; Yasuto Hijikata; Hiroyuki Yaguchi; Sadafumi Yoshida
SILICON CARBIDE AND RELATED MATERIALS 2008, Volume：615-617, First page：509, Last page：512, 2009, [Reviewed]
English, International conference proceedings
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H. Seki; T. Wakabayashi; Y. Hijikata; H. Yaguchi; S. Yoshida
SILICON CARBIDE AND RELATED MATERIALS 2008, Volume：615-617, First page：505, Last page：508, 2009, [Reviewed]
English, Scientific journal
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DOI ID：10.4028/www.scientific.net/MSF.615-617.505, ISSN：0255-5476, ORCID：48141548, Web of Science ID：WOS:000265961100121 - Model Calculation of SiC Oxide Growth Rate Based on the Silicon and Carbon Emission Model
Yasuto Hijikata; Hiroyuki Yaguchi; Sadafumi Yoshida
SILICON CARBIDE AND RELATED MATERIALS 2008, Volume：615-617, First page：489, Last page：492, 2009, [Reviewed]
English, International conference proceedings
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DOI ID：10.4028/www.scientific.net/MSF.615-617.489, ISSN：0255-5476, Web of Science ID：WOS:000265961100117 - Oxide Growth Rate Enhancement of Silicon Carbide (0001) Si-Faces in Thin Oxide Regime
Yamamoto Takeshi; Hijikata Yasuto; Yaguchi Hiroyuki; Yoshida Sadafumi
Japanese Journal of Applied Physics, Volume：47, Number：10, First page：7803, Last page：7806, Oct. 2008, [Reviewed]
Scientific journal
DOI：https://doi.org/10.1143/JJAP.47.7803
DOI ID：10.1143/JJAP.47.7803, ISSN：0021-4922, ORCID：30384797, Web of Science ID：WOS:000260443900009 - Twin photoluminescence peaks from single isoelectronic traps in nitrogen delta-doped GaAs
Y. Endo; Y. Hijikata; H. Yaguchi; S. Yoshida; M. Yoshita; H. Akiyama; F. Nakajima; R. Katayama; K. Onabe
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Volume：40, Number：6, First page：2110, Last page：2112, Apr. 2008, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1016/j.physe.2007.10.047
DOI ID：10.1016/j.physe.2007.10.047, ISSN：1386-9477, ORCID：30384800, Web of Science ID：WOS:000255717400104 - High resolution X- ray diffraction and raman scattering studies of cubic-phase InN films grown by MBE
S. Kuntharin; S. Sanorpim; H. Yaguchi; Y. Iwahashi; M. Orihara; Y. Hijakata; S. Yoshida
Advanced Materials Research, Volume：55-57, First page：773, Last page：776, 2008, [Reviewed]
International conference proceedings
DOI：https://doi.org/10.4028/www.scientific.net/amr.55-57.773
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DOI ID：10.4028/www.scientific.net/amr.55-57.773, ISSN：1022-6680, SCOPUS ID：63049097802 - Photoluminescence study of hexagonal InN/InGaN quantum well structures grown on 3C-SiC (001) substrates by molecular beam epitaxy
S. Hirano; T. Inoue; G. Shikata; M. Orihara; Y. Hijikata; H. Yaguchi; S. Yoshida; Y. Hirabayashi
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, Volume：5, Number：6, First page：1730, Last page：+, 2008, [Reviewed]
English, International conference proceedings
DOI：https://doi.org/10.1002/pssc.200778606
DOI ID：10.1002/pssc.200778606, ISSN：1862-6351, ORCID：30384799, Web of Science ID：WOS:000256695700075 - Photoluminescence of cubic InN films on MgO (001) substrates
T. Inoue; Y. Iwahashi; S. Oishi; M. Orihara; Y. Hijikata; H. Yaguchi; S. Yoshida
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, Volume：5, Number：6, First page：1579, Last page：1581, 2008, [Reviewed]
English, International conference proceedings
DOI：https://doi.org/10.1002/pssc.200778505
DOI ID：10.1002/pssc.200778505, ISSN：1862-6351, ORCID：30384798, Web of Science ID：WOS:000256695700031 - Improvement of the surface morphology of a-plane InN using low-temperature InN buffer layers
G. Shikata; S. Hirano; T. Inoue; M. Orihara; Y. Hijikata; H. Yaguchi; S. Yoshida
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, Volume：5, Number：6, First page：1808, Last page：1810, 2008, [Reviewed]
English, International conference proceedings
DOI：https://doi.org/10.1002/pssc.200778662
DOI ID：10.1002/pssc.200778662, ISSN：1862-6351, ORCID：30384796, Web of Science ID：WOS:000256695700100 - Growth rate enhancement of (0001)-face silicon-carbide oxidation in thin oxide regime
Yamamoto Takeshi; Hijikata Yasuto; Yaguchi Hiroyuki; Yoshida Sadafumi
Japanese Journal of Applied Physics Part 2-Letters & Express Letters, Volume：46, Number：29-32, First page：L770, Last page：L772, Aug. 2007, [Reviewed]
Scientific journal
DOI：https://doi.org/10.1143/JJAP.46.L770
DOI ID：10.1143/JJAP.46.L770, ISSN：0021-4922, ORCID：30384801, Web of Science ID：WOS:000249166000018 - RF-MBE growth of a-plane InN on r-plane sapphire with a GaN underlayer
G. Shikata; S. Hirano; T. Inoue; M. Orihara; Y. Hijikata; H. Yaguchi; S. Yoshida
JOURNAL OF CRYSTAL GROWTH, Volume：301, First page：517, Last page：520, Apr. 2007, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1016/j.jcrysgro.2006.11.072
DOI ID：10.1016/j.jcrysgro.2006.11.072, ISSN：0022-0248, eISSN：1873-5002, ORCID：30384808, Web of Science ID：WOS:000246015800119 - RF-MBE growth of InN/InGaN quantum well structures on 3C-SiC substrates
S. Hirano; T. Inoue; G. Shikata; M. Orihara; Y. Hijikata; H. Yaguchi; S. Yoshida
JOURNAL OF CRYSTAL GROWTH, Volume：301, First page：513, Last page：516, Apr. 2007, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1016/j.jcrysgro.2006.11.117
DOI ID：10.1016/j.jcrysgro.2006.11.117, ISSN：0022-0248, ORCID：30384809, Web of Science ID：WOS:000246015800118 - Simultaneous determination of the carrier concentration, mobility and thickness of SiC homo-epilayers using terahertz reflectance spectroscopy
Shingo Oishi; Yasuto Hijikata; Hiroyuki Yaguchi; Sadafumi Yoshida
SILICON CARBIDE AND RELATED MATERIALS 2006, Volume：556-557, First page：423, Last page：+, 2007, [Reviewed]
English, International conference proceedings
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DOI ID：10.4028/www.scientific.net/MSF.556-557.423, ISSN：0255-5476, ORCID：48141549, Web of Science ID：WOS:000249653900101 - Structural and optical characterization of high In content cubic InGaN on GaAs(001) substrates by RF-MBE
Nakamura Teruyuki; Endo Yuta; Katayama Ryuji; Yaguchi Hiroyuki; Onabe Kentaro
physica status solidi (c), Volume：4, Number：7, First page：2437, Last page：2440, 2007, [Reviewed]
Scientific journal
DOI：https://doi.org/10.1002/pssc.200674803
DOI ID：10.1002/pssc.200674803, ISSN：1862-6351, eISSN：1610-1642, ORCID：30384811, Web of Science ID：WOS:000248047600056 - Photoluminescence study of isoelectronic traps in dilute GaAsN alloys
H. Yaguchi; T. Aoki; T. Morioke; Y. Hijikata; S. Yoshida; M. Yoshita; H. Akiyama; D. Aoki; K. Onabe
Physica Status Solidi (C) Current Topics in Solid State Physics, Volume：4, Number：7, First page：2760, Last page：2763, 2007, [Reviewed]
English, International conference proceedings
DOI：https://doi.org/10.1002/pssc.200674721
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=49749134309&origin=inward
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DOI ID：10.1002/pssc.200674721, ISSN：1862-6351, ORCID：30384807, SCOPUS ID：49749134309, Web of Science ID：WOS:000248047600135 - Modulation spectroscopic investigation on lattice polarity of gallium nitride
Ryuji Katayama; Kentaro Onabe; Hiroyuki Yaguchi; Tomonori Matsushita; Takashi Kondo
Applied Physics Letters, Volume：91, Number：6, 2007, [Reviewed]
Scientific journal
DOI：https://doi.org/10.1063/1.2764115
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=34547842633&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=34547842633&origin=inward
DOI ID：10.1063/1.2764115, ISSN：0003-6951, ORCID：30384806, SCOPUS ID：34547842633, Web of Science ID：WOS:000248661400044 - Micro-photoluminescence study of nitrogen delta-doped GaAs grown by metalorganic vapor phase epitaxy
Y. Endo; K. Tanioka; Y. Hijikata; H. Yaguchi; S. Yoshida; M. Yoshita; H. Akiyama; W. Ono; F. Nakajima; R. Katayama; K. Onabe
JOURNAL OF CRYSTAL GROWTH, Volume：298, First page：73, Last page：75, Jan. 2007, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1016/j.jcrysgro.2006.10.019
DOI ID：10.1016/j.jcrysgro.2006.10.019, ISSN：0022-0248, ORCID：30384804, Web of Science ID：WOS:000244622600017 - Micro-Raman study on the improvement of luminescence efficiency of GaAsN alloys
K. Tanioka; Y. Endo; Y. Hijikata; H. Yaguchi; S. Yoshida; M. Yoshita; H. Akiyama; K. Onabe
JOURNAL OF CRYSTAL GROWTH, Volume：298, First page：131, Last page：134, Jan. 2007, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1016/j.jcrysgro.2006.10.006
DOI ID：10.1016/j.jcrysgro.2006.10.006, ISSN：0022-0248, eISSN：1873-5002, ORCID：30384805, Web of Science ID：WOS:000244622600030 - Simultaneous determination of carrier concentration, mobility, and thickness of SiC homoepilayers by infrared reflectance spectroscopy
Shingo Oishi; Yasuto Hijikata; Hiroyuki Yaguchi; Sadafumi Yoshida
Japanese Journal of Applied Physics, Part 2: Letters, Volume：45, Number：46-50, First page：L1226, Last page：L1229, Dec. 2006, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1143/JJAP.45.L1226
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=34547874643&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=34547874643&origin=inward
DOI ID：10.1143/JJAP.45.L1226, ISSN：0021-4922, eISSN：1347-4065, ORCID：30384817, SCOPUS ID：34547874643, Web of Science ID：WOS:000243208300002 - Real Time Observation of SiC Oxidation Using an In Situ Ellipsometer
K. Kakubari; R. Kuboki; Yasuto Hijikata; Hiroyuki Yaguchi; Sadafumi Yoshida
Materials Science Forum, Volume：527-529, First page：1031, Last page：1034, Oct. 2006, [Reviewed]
Scientific journal
DOI：https://doi.org/10.4028/www.scientific.net/msf.527-529.1031
DOI ID：10.4028/www.scientific.net/msf.527-529.1031, eISSN：1662-9752, ORCID：30384815, Web of Science ID：WOS:000244227200242 - Characterization of oxide films on 4H-SiC epitaxial (000(1)over-bar) faces by high-energy-resolution photoemission spectroscopy: Comparison between wet and dry oxidation
Hijikata Yasuto; Yaguchi Hiroyuki; Yoshida Sadafumi; Takata Yasutaka; Kobayashi Keisuke; Nohira Hiroshi; Hattori Takeo
Journal of Applied Physics, Volume：100, Number：5, Sep. 2006, [Reviewed]
Scientific journal
DOI：https://doi.org/10.1063/1.2345471
DOI ID：10.1063/1.2345471, ISSN：0021-8979, ORCID：30384812, Web of Science ID：WOS:000240602500065 - Off-angle dependence of characteristics of 4H-SiC-oxide interfaces
Y. Hijikata; H. Yaguchi; S. Yoshida; Y. Takata; K. Kobayashi; H. Nohira; T. Hattori
Silicon Carbide and Related Materials 2005, Pts 1 and 2, Volume：527-529, First page：1003, Last page：1006, 2006, [Reviewed]
English, International conference proceedings
DOI：https://doi.org/10.4028/www.scientific.net/MSF.527-529.1003
DOI ID：10.4028/www.scientific.net/MSF.527-529.1003, ISSN：0255-5476, ORCID：48141550, Web of Science ID：WOS:000244227200235 - RF-MBE growth of cubic InN films on MgO (001) substrates
Y. Iwahashi; H. Yaguchi; A. Nishimoto; M. Orihara; Y. Hijikata; S. Yoshida
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, Volume：3, Number：6, First page：1515, Last page：1518, 2006, [Reviewed]
English, International conference proceedings
DOI：https://doi.org/10.1002/pssc.200565312
DOI ID：10.1002/pssc.200565312, ISSN：1862-6351, ORCID：30384816, Web of Science ID：WOS:000239543600033 - Photo-induced improvement of radiative efficiency and structural changes in GaAsN alloys
H. Yaguchi; T. Morioke; T. Aoki; H. Shimizu; Y. Hijikata; S. Yoshida; M. Yoshita; H. Akiyama; N. Usami; D. Aoki; K. Onabe
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, Volume：3, Number：6, First page：1907, Last page：1910, 2006, [Reviewed]
English, International conference proceedings
DOI：https://doi.org/10.1002/pssc.200565372
DOI ID：10.1002/pssc.200565372, ISSN：1862-6351, ORCID：30384814, Web of Science ID：WOS:000239543600124 - Effect of Ar post-oxidation annealing on oxide-4H-SiC interfaces studied by capacitance to voltage measurements and photoemission spectroscopy
Y Hijikata; H Yaguchi; S Yoshida; Y Ishida; M Yoshikawa
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Volume：23, Number：2, First page：298, Last page：303, Mar. 2005, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1116/1.1865153
DOI ID：10.1116/1.1865153, ISSN：0734-2101, eISSN：1520-8559, ORCID：30384819, Web of Science ID：WOS:000227739200013 - Characterization of oxide films on SIC epitaxial (000-1) faces by angle-resolved photoemission spectroscopy measurements using synchrotron radiation
A Hijikata; H Yaguchi; S Yoshida; Y Takata; K Kobayashi; S Shin; H Nohira; T Hattori
SILICON CARBIDE AND RELATED MATERIALS 2004, Volume：483, First page：585, Last page：588, 2005, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.4028/www.scientific.net/MSF.483-485.585
DOI ID：10.4028/www.scientific.net/MSF.483-485.585, ISSN：0255-5476, ORCID：56291594, Web of Science ID：WOS:000228549600137 - Growth of high-quality hexagonal InN on 3C-SiC (001) by molecular beam epitaxy
H Yaguchi; Y Kitamura; K Nishida; Y Iwahashi; Y Hijikata; S Yoshida
PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7, Volume：2, Number：7, First page：2267, Last page：2270, 2005, [Reviewed]
English, International conference proceedings
DOI：https://doi.org/10.1002/pssc.200461386
DOI ID：10.1002/pssc.200461386, ISSN：1862-6351, ORCID：30384820, Web of Science ID：WOS:000230421400058 - Epitaxial growth of hexagonal and cubic InN films
K. Nishida; Y. Kitamura; Y. Hijikata; H. Yaguchi; S. Yoshida
Physica Status Solidi (B) Basic Research, Volume：241, Number：12, First page：2839, Last page：2842, Oct. 2004, [Reviewed]
International conference proceedings
DOI：https://doi.org/10.1002/pssb.200405049
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Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=7444245442&origin=inward
DOI ID：10.1002/pssb.200405049, ISSN：0370-1972, ORCID：30384823, SCOPUS ID：7444245442 - Characterization of carrier concentration and mobility in n-type SiC wafers using infrared reflectance spectroscopy
Katsutoshi Narita; Yasuto Hijikata; Hiroyuki Yaguchi; Sadafumi Yoshida; Shinichi Nakashima
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Volume：43, Number：8 A, First page：5151, Last page：5156, Aug. 2004, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1143/JJAP.43.5151
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=6444243848&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=6444243848&origin=inward
DOI ID：10.1143/JJAP.43.5151, ISSN：0021-4922, ORCID：30384821, SCOPUS ID：6444243848, Web of Science ID：WOS:000224841400013 - Characterization of electrical properties in high-dose implanted and post-implantation-annealed 4H-SiC wafers using infrared reflectance spectroscopy
K Narita; Y Hijikata; H Yaguchi; S Yoshida; J Senzaki; S Nakashima
SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, Volume：457-460, First page：905, Last page：908, 2004, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.4028/www.scientific.net/MSF.457-460.905
DOI ID：10.4028/www.scientific.net/MSF.457-460.905, ISSN：0255-5476, ORCID：56291630, Web of Science ID：WOS:000222802200215 - Photoemission spectroscopic studies on oxide/SiC interfaces formed by dry and pyrogenic oxidation
Y Hijikata; H Yaguchi; Y Ishida; M Yoshikawa; T Kamiya; S Yoshida
SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, Volume：457-460, First page：1341, Last page：1344, 2004, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.4028/www.scientific.net/MSF.457-460.1341
DOI ID：10.4028/www.scientific.net/MSF.457-460.1341, ISSN：0255-5476, ORCID：48141565, Web of Science ID：WOS:000222802200319 - Spectroscopic ellipsometry study on the dielectric functions of GaPN alloys
H. Kanaya; H. Yaguchi; Y. Hijikata; S. Yoshida; S. Miyoshi; K. Onabe
Physica Status Solidi C: Conferences, Volume：0, Number：7, First page：2753, Last page：2756, 2003, [Reviewed]
International conference proceedings
DOI：https://doi.org/10.1002/pssc.200303430
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=33749433192&origin=inward
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DOI ID：10.1002/pssc.200303430, ISSN：1610-1634, ORCID：30384826, SCOPUS ID：33749433192 - Improvement in the luminescence efficiency of GaAsN alloys by photoexcitation
H Yaguchi; T Morioke; T Aoki; Y Hijikata; S Yoshida; H Akiyama; N Usami; D Aoki; K Onabe
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, Volume：0, Number：7, First page：2782, Last page：2784, 2003, [Reviewed]
English, International conference proceedings
DOI：https://doi.org/10.1002/pssc.200303514
DOI ID：10.1002/pssc.200303514, ISSN：1862-6351, ORCID：30384825, Web of Science ID：WOS:000189401700190 - Measurements of the depth profile of the refractive indices in oxide films on SiC by spectroscopic ellipsometry
Takeshi Iida; Yuichi Tomioka; Kazuo Yoshimoto; Masahiko Midorikawa; Hiroyuki Tukada; Misao Orihara; Yasuto Hijikata; Hiroyuki Yaguchi; Masahito Yoshikawa; Hisayoshi Itoh; Yuuki Ishida; Sadafumi Yoshida
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Volume：41, Number：2 A, First page：800, Last page：804, Feb. 2002, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1143/JJAP.41.800
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=0036478462&origin=inward
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DOI ID：10.1143/JJAP.41.800, ISSN：0021-4922, ORCID：30384829, SCOPUS ID：0036478462, Web of Science ID：WOS:000176451200070 - Control of macroscopic absorption coefficient of multicrystalline SiGe by microscopic compositional distribution
Noritaka Usami; Kozo Fujiwara; Toru Ujihara; Gen Sazaki; Hiroyuki Yaguchi; Yoshihiro Murakami; Kazuo Nakajima
Japanese Journal of Applied Physics, Part 2: Letters, Volume：41, Number：1 A/B, First page：L37, Last page：L39, Jan. 2002, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1143/JJAP.41.L37
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=0037082098&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=0037082098&origin=inward
DOI ID：10.1143/JJAP.41.L37, ISSN：0021-4922, ORCID：30384828, SCOPUS ID：0037082098, Web of Science ID：WOS:000173882600012 - Spatial mapping of the carrier concentration and mobility in SiC wafers by micro fourier-transform infrared spectroscopy
H. Yaguchi; K. Narita; Y. Hijikata; S. Yoshida; S. Nakashima; N. Oyanagi
Materials Science Forum, Volume：389-393, Number：1, First page：621, Last page：624, 2002, [Reviewed]
Scientific journal
DOI：https://doi.org/10.4028/www.scientific.net/msf.389-393.621
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=34247249828&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=34247249828&origin=inward
DOI ID：10.4028/www.scientific.net/msf.389-393.621, ISSN：0255-5476, eISSN：1662-9752, SCOPUS ID：34247249828 - X-ray photoelectron spectroscopy studies of post-oxidation process effects on oxide/SiC interfaces
Y Hijikata; H Yaguchi; M Yoshikawa; S Yoshida
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, Volume：389-3, First page：1033, Last page：1036, 2002, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.4028/www.scientific.net/MSF.389-393.1033
DOI ID：10.4028/www.scientific.net/MSF.389-393.1033, ISSN：0255-5476, ORCID：48141540, Web of Science ID：WOS:000177321100249 - Characterization of the interfaces between SiC and oxide films by spectroscopic ellipsometry
Y Tomioka; T Iida; M Midorikawa; H Tukada; K Yoshimoto; Y Hijikata; H Yaguchi; M Yoshikawa; Y Ishida; R Kosugi; S Yoshida
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, Volume：389-3, First page：1029, Last page：1032, 2002, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.4028/www.scientific.net/MSF.389-393.1029
DOI ID：10.4028/www.scientific.net/MSF.389-393.1029, ISSN：0255-5476, ORCID：56291595, Web of Science ID：WOS:000177321100248 - Composition analysis of SiO2/SiC interfaces by electron spectroscopic measurements using slope-shaped oxide films
Y Hijikata; H Yaguchi; M Yoshikawa; S Yoshida
APPLIED SURFACE SCIENCE, Volume：184, Number：1-4, First page：161, Last page：166, Dec. 2001, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1016/S0169-4332(01)00491-3
DOI ID：10.1016/S0169-4332(01)00491-3, ISSN：0169-4332, eISSN：1873-5584, CiNii Articles ID：80012788973, ORCID：56291762, Web of Science ID：WOS:000173000100027 - Spectroscopic ellipsometry study on the electronic structure near the absorption edge of GaAsN alloys
H. Yaguchi; S. Matsumoto; Y. Hijikata; S. Yoshida; T. Maeda; M. Ogura; D. Aoki; K. Onabe
Physica Status Solidi (B) Basic Research, Volume：228, Number：1, First page：269, Last page：272, Nov. 2001, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1002/1521-3951(200111)228:1<269::AID-PSSB269>3.0.CO;2-3
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=0035541085&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=0035541085&origin=inward
DOI ID：10.1002/1521-3951(200111)228:1<269::AID-PSSB269>3.0.CO;2-3, ISSN：0370-1972, ORCID：30384834, SCOPUS ID：0035541085, Web of Science ID：WOS:000172513100060 - Photoluminescence study on temperature dependence of band gap energy of GaAsN alloys
H. Yaguchi; S. Kikuchi; Y. Hijikata; S. Yoshida; D. Aoki; K. Onabe
Physica Status Solidi (B) Basic Research, Volume：228, Number：1, First page：273, Last page：277, Nov. 2001, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1002/1521-3951(200111)228:1<273::AID-PSSB273>3.0.CO;2-N
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=0035541092&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=0035541092&origin=inward
DOI ID：10.1002/1521-3951(200111)228:1<273::AID-PSSB273>3.0.CO;2-N, ISSN：0370-1972, ORCID：30384833, SCOPUS ID：0035541092, Web of Science ID：WOS:000172513100061 - Temperature dependence of excitonic Gamma(c)-Gamma(v) transition energies GaxIn1-xP crystals
Y Ishitani; H Yaguchi; Y Shiraki
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Volume：40, Number：3A, First page：1183, Last page：1187, Mar. 2001, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1143/JJAP.40.1183
DOI ID：10.1143/JJAP.40.1183, ISSN：0021-4922, ORCID：30384835, Web of Science ID：WOS:000170771500006 - Optical characterization of metalorganic vapor-phase epitaxy-grown GaAs1-xNx alloys using spectroscopic ellipsometry
S Matsumoto; H Yaguchi; S Kashiwase; T Hashimoto; S Yoshida; D Aoki; K Onabe
JOURNAL OF CRYSTAL GROWTH, Volume：221, First page：481, Last page：484, Dec. 2000, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1016/S0022-0248(00)00748-X
DOI ID：10.1016/S0022-0248(00)00748-X, ISSN：0022-0248, CiNii Articles ID：80012169205, ORCID：30384838, Web of Science ID：WOS:000166501400085 - Characterization of oxide films on SiC by spectroscopic ellipsometry
T Iida; Y Tomioka; Y Hijikata; H Yaguchi; M Yoshikawa; Y Ishida; H Okumura; S Yoshida
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, Volume：39, Number：10B, First page：L1054, Last page：L1056, Oct. 2000, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1143/JJAP.39.L1054
DOI ID：10.1143/JJAP.39.L1054, ISSN：0021-4922, ORCID：30384836, Web of Science ID：WOS:000090138800014 - Optical properties of cubic GaN grown on 3C-SiC (100) substrates by metalorganic vapor phase epitaxy
J. Wu; H. Yaguchi; B. P. Zhang; Y. Segawa; K. Onabe; Y. Shiraki
Physica Status Solidi (A) Applied Research, Volume：180, Number：1, First page：403, Last page：407, Jul. 2000, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1002/1521-396X(200007)180:1<403::AID-PSSA403>3.0.CO;2-A
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=0034224763&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=0034224763&origin=inward
DOI ID：10.1002/1521-396X(200007)180:1<403::AID-PSSA403>3.0.CO;2-A, ISSN：0031-8965, ORCID：30384840, SCOPUS ID：0034224763, Web of Science ID：WOS:000088605900067 - Fabrication and optical properties of GaAs/AlGaAs quantum dot grown in tetrahedral-shaped recesses on GaAs (111)B substrates by MOVPE
T Tsujikawa; S Mori; H Watanabe; M Yoshita; H Akiyama; R van Dalen; K Onabe; H Yaguchi; Y Shiraki; R Ito
PHYSICA E, Volume：7, Number：3-4, First page：308, Last page：316, May 2000, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1016/S1386-9477(99)00331-8
DOI ID：10.1016/S1386-9477(99)00331-8, ISSN：1386-9477, ORCID：56291692, Web of Science ID：WOS:000087358100003 - Second-harmonic generation from GaP/AlP multilayers on GaP (111) substrates based on quasi-phase matching for the fundamental standing wave
M Sato; H Yaguchi; Shoji, I; K Onabe; R Ito; Y Shiraki; S Nakagawa; N Yamada
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, Volume：39, Number：4B, First page：L334, Last page：L336, Apr. 2000, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1143/JJAP.39.L334
DOI ID：10.1143/JJAP.39.L334, ISSN：0021-4922, ORCID：30384841, Web of Science ID：WOS:000088910900003 - Optical constants of cubic GaN, AlN, and AlGaN alloys
Takanobu Suzuki; Hiroyuki Yaguchi; Hajime Okumura; Yuuki Ishida; Sadafumi Yoshida
Japanese Journal of Applied Physics, Part 2: Letters, Volume：39, Number：6 A, First page：L497, Last page：L499, 2000, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1143/JJAP.39.L497
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=0033702328&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=0033702328&origin=inward
DOI ID：10.1143/JJAP.39.L497, ISSN：0021-4922, ORCID：30384839, SCOPUS ID：0033702328, Web of Science ID：WOS:000088911300005 - Time-resolved photoluminescence of cubic GaN grown by metalorganic vapor phase epitaxy
H. Yaguchi; J. Wu; H. Akiyama; M. Baba; K. Onabe; Y. Shiraki
Physica Status Solidi (B) Basic Research, Volume：216, Number：1, First page：237, Last page：240, Nov. 1999, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1002/(SICI)1521-3951(199911)216:1<237::AID-PSSB237>3.0.CO;2-O
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=0033242881&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=0033242881&origin=inward
DOI ID：10.1002/(SICI)1521-3951(199911)216:1<237::AID-PSSB237>3.0.CO;2-O, ISSN：0370-1972, ORCID：30384850, SCOPUS ID：0033242881, Web of Science ID：WOS:000084193900046 - Substrate misorientation dependence of the hexagonal phase inclusion in cubic GaN films grown by metalorganic vapor phase epitaxy
A. Nagayama; R. Katayama; N. Nakadan; K. Miwa; H. Yaguchi; J. Wu; K. Onabe; Y. Shiraki
Physica Status Solidi (A) Applied Research, Volume：176, Number：1, First page：513, Last page：517, Nov. 1999, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1002/(SICI)1521-396X(199911)176:1<513::AID-PSSA513>3.0.CO;2-Y
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=0033221287&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=0033221287&origin=inward
DOI ID：10.1002/(SICI)1521-396X(199911)176:1<513::AID-PSSA513>3.0.CO;2-Y, ISSN：0031-8965, ORCID：30384849, SCOPUS ID：0033221287, Web of Science ID：WOS:000084032200098 - Selective growth of cubic GaN an patterned GaAs(100) substrates by metalorganic vapor phase epitaxy
J Wu; M Kudo; A Nagayama; H Yaguchi; K Onabe; Y Shiraki
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Volume：176, Number：1, First page：557, Last page：560, Nov. 1999, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1002/(SICI)1521-396X(199911)176:1<557::AID-PSSA557>3.0.CO;2-2
DOI ID：10.1002/(SICI)1521-396X(199911)176:1<557::AID-PSSA557>3.0.CO;2-2, ISSN：0031-8965, ORCID：30384847, Web of Science ID：WOS:000084032200105 - Optical characterization of cubic AlGaN epilayers by cathodoluminescence and spectroscopic ellipsometry
H Okumura; T Koizumi; Y Ishida; H Yaguchi; S Yoshida
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Volume：216, Number：1, First page：211, Last page：214, Nov. 1999, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1002/(SICI)1521-3951(199911)216:1<211::AID-PSSB211>3.3.CO;2-A
DOI ID：10.1002/(SICI)1521-3951(199911)216:1<211::AID-PSSB211>3.3.CO;2-A, ISSN：0370-1972, ORCID：30384844, Web of Science ID：WOS:000084193900041 - MOVPE growth and luminescence properties of GaAsN alloys with higher nitrogen concentrations
K Onabe; D Aoki; J Wu; H Yaguchi; Y Shiraki
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Volume：176, Number：1, First page：231, Last page：235, Nov. 1999, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1002/(SICI)1521-396X(199911)176:1<231::AID-PSSA231>3.0.CO;2-9
DOI ID：10.1002/(SICI)1521-396X(199911)176:1<231::AID-PSSA231>3.0.CO;2-9, ISSN：1862-6300, eISSN：1862-6319, ORCID：30384843, Web of Science ID：WOS:000084032200044 - Stimulated emission from optically pumped cubic GaN/AlGaN double heterostructures
Jun Wu; Hiroyuki Yaguchi; Kentaro Onabe; Yasuhiro Shiraki
Journal of Crystal Growth, Volume：197, Number：1-2, First page：73, Last page：77, 1999, [Reviewed]
Scientific journal
DOI：https://doi.org/10.1016/S0022-0248(98)00945-2
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=0033079425&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=0033079425&origin=inward
DOI ID：10.1016/S0022-0248(98)00945-2, ISSN：0022-0248, CiNii Articles ID：80010901748, ORCID：48141822, SCOPUS ID：0033079425 - Photoluminescence study of InP/GaP highly strained quantum wells
T. Kimura; H. Yaguchi; N. Usami; K. Onabe; Y. Shiraki
Institute of Physics Conference Series, Volume：162, First page：511, Last page：516, 1999
Scientific journal
ORCID：56291592, Web of Science ID：WOS:000177562700083 - Quantum size effect of lead iodide nanoparticles formed by a Langmuir-Blodgett technique
Tetsuya Yamaki; Keisuke Asai; Kenkichi Ishigure; Kazuhiro Ema; Hiroyuki Yaguchi
Molecular Crystals and Liquid Crystals Science and Technology Section A: Molecular Crystals and Liquid Crystals, Volume：337, First page：225, Last page：228, 1999, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1080/10587259908023418
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=33745440831&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=33745440831&origin=inward
DOI ID：10.1080/10587259908023418, ISSN：1058-725X, ORCID：56291741, SCOPUS ID：33745440831, Web of Science ID：WOS:000084232500054 - High-Temperature Metalorganic Vapor Phase Epitaxial Growth of GaAs/AlGaAs Quantum Structures in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates
Tomoko Tsujikawa; Toshifumi Irisawa; Hiroyuki Yaguchi; Kentaro Onabe; Yasuhiro Shiraki; Ryoichi Ito
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Volume：38, Number：1 B, First page：459, Last page：464, 1999, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1143/JJAP.38.459
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=0032621849&origin=inward
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DOI ID：10.1143/JJAP.38.459, ISSN：0021-4922, ORCID：30384842, SCOPUS ID：0032621849, Web of Science ID：WOS:000078971100039 - Photoluminescence and photoluminescence-excitation spectroscopy of GaPAsN/GaP lattice-matched multiple quantum well structures
Goshi Biwa; Hiroyuki Yaguchi; Kentaro Onabe; Yasuhiro Shiraki
Journal of Crystal Growth, Volume：195, Number：1-4, First page：574, Last page：578, Dec. 1998, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1016/S0022-0248(98)00734-9
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DOI ID：10.1016/S0022-0248(98)00734-9, ISSN：0022-0248, ORCID：56291728, SCOPUS ID：0032477147, Web of Science ID：WOS:000077839200092 - Micro Raman and micro photoluminescence study of cubic GaN grown on 3C-SiC(0 0 1) substrates by metalorganic vapor phase epitaxy
Hiroyuki Yaguchi; Jun Wu; Baoping Zhang; Yusaburo Segawa; Hiroyuki Nagasawa; Kentaro Onabe; Yasuhiro Shiraki
Journal of Crystal Growth, Volume：195, Number：1-4, First page：323, Last page：327, Dec. 1998, [Reviewed]
English, Scientific journal
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DOI ID：10.1016/S0022-0248(98)00672-1, ISSN：0022-0248, ORCID：56291747, SCOPUS ID：0032477174, Web of Science ID：WOS:000077839200055 - Sublattice reversal in GaAs/Si/GaAs (100) heterostructures by molecular beam epitaxy
Shinji Koh; Takashi Kondo; Tetsuya Ishiwada; Chihiro Iwamoto; Hideki Ichinose; Hiroyuki Yaguchi; Takanori Usami; Yasuhiro Shiraki; Ryoichi Ito
Japanese Journal of Applied Physics, Part 2: Letters, Volume：37, Number：12 SUPPL. B, First page：L1493, Last page：L1496, Dec. 1998, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1143/JJAP.37.L1493
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DOI ID：10.1143/JJAP.37.L1493, ISSN：0021-4922, ORCID：30384870, SCOPUS ID：0032295743, Web of Science ID：WOS:000078189800001 - Polarization characteristics of crescent-shaped tensile-strained GaAsP/AlGaAs quantum wire-like lasers (vol 37, pg 1556, 1998)
M Ishikawa; W Pan; Y Kaneko; H Yaguchi; K Onabe; R Ito; Y Shiraki
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Volume：37, Number：7, First page：4230, Last page：4230, Jul. 1998, [Reviewed]
English, Scientific journal
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DOI ID：10.1143/JJAP.37.4230, ISSN：0021-4922, ORCID：30384868, Web of Science ID：WOS:000075363300072 - Theoretical study of conduction band edge formation in GaP
1 - X Nx alloys using a tight-binding approximation
H. Yaguchi
Journal of Crystal Growth, Volume：189-190, First page：500, Last page：504, Jun. 1998, [Reviewed], [Lead, Corresponding]
English, Scientific journal
DOI：https://doi.org/10.1016/S0022-0248(98)00339-X
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=0032090874&origin=inward
DOI ID：10.1016/S0022-0248(98)00339-X, ISSN：0022-0248, ORCID：48141882, SCOPUS ID：0032090874, Web of Science ID：WOS:000074730400102 - Temperature dependence of photoluminescence of GaP
1-x Nx alloys
Hiroyuki Yaguchi; Goshi Biwa; Seiro Miyoshi; Daiichiro Aoki; Keisuke Arimoto; Kentaro Onabe; Ryoichi Ito; Yasuhiro Shiraki
Journal of Crystal Growth, Volume：189-190, First page：496, Last page：499, Jun. 1998, [Reviewed], [Lead]
English, Scientific journal
DOI：https://doi.org/10.1016/S0022-0248(98)00338-8
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Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=0032092389&origin=inward
DOI ID：10.1016/S0022-0248(98)00338-8, ISSN：0022-0248, ORCID：30384871, SCOPUS ID：0032092389, Web of Science ID：WOS:000074730400101 - Metalorganic vapor-phase epitaxy of GaP
1-x-y Asy Nx quaternary alloys on GaP
Goshi Biwa; Hiroyuki Yaguchi; Kentaro Onabe; Yasuhiro Shiraki
Journal of Crystal Growth, Volume：189-190, First page：485, Last page：489, Jun. 1998, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1016/S0022-0248(98)00336-4
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Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=0032089854&origin=inward
DOI ID：10.1016/S0022-0248(98)00336-4, ISSN：0022-0248, ORCID：48141583, SCOPUS ID：0032089854, Web of Science ID：WOS:000074730400099 - Investigation of luminescence properties of GaN single crystals grown on 3C-SiC substrates
J. Wu; H. Yaguchi; H. Nagasawa; Y. Yamaguchi; K. Onabe; Y. Shiraki; R. Ito
Journal of Crystal Growth, Volume：189-190, First page：420, Last page：424, Jun. 1998, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1016/S0022-0248(98)00312-1
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Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=0032092034&origin=inward
DOI ID：10.1016/S0022-0248(98)00312-1, ISSN：0022-0248, eISSN：1873-5002, ORCID：30384857, SCOPUS ID：0032092034, Web of Science ID：WOS:000074730400085 - Optical transitions in cubic GaN grown on GaAs(1 0 0) substrates by metalorganic vapor-phase epitaxy
Jun Wu; Hiroyuki Yaguchi; Kentaro Onabe; Ryoichi Ito; Yasuhiro Shiraki
Journal of Crystal Growth, Volume：189-190, First page：415, Last page：419, Jun. 1998, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1016/S0022-0248(98)00311-X
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DOI ID：10.1016/S0022-0248(98)00311-X, ISSN：0022-0248, eISSN：1873-5002, ORCID：56291665, SCOPUS ID：0032093256, Web of Science ID：WOS:000074730400084 - Fabrication of Pb(Zr,Ti)O
3 /MgO/GaN/GaAs structure for optoelectronic device applications
Atsushi Masuda; Shinya Morita; Hideki Shigeno; Akiharu Morimoto; Tatsuo Shimizu; Jun Wu; Hiroyuki Yaguchi; Kentaro Onabe
Journal of Crystal Growth, Volume：189-190, First page：227, Last page：230, Jun. 1998, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1016/S0022-0248(98)00241-3
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Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=0032092953&origin=inward
DOI ID：10.1016/S0022-0248(98)00241-3, ISSN：0022-0248, eISSN：1873-5002, ORCID：56291701, SCOPUS ID：0032092953, Web of Science ID：WOS:000074730400048 - Characterization of SiGe strained heterostructures grown by molecular beam epitaxy using a Si effusion cell
H. Yaguchi; T. Yamamoto; Y. Shiraki
Thin Solid Films, Volume：321, Number：1-2, First page：241, Last page：244, May 1998, [Reviewed], [Lead]
English, Scientific journal
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Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=0347537655&origin=inward
DOI ID：10.1016/S0040-6090(98)00480-5, ISSN：0040-6090, CiNii Articles ID：80010404794, ORCID：48141850, SCOPUS ID：0347537655, Web of Science ID：WOS:000074745700044 - Polarization characteristics of crescent-shaped tensile-strained GaAsP/AlGaAs quantum wire-like lasers
Mitsuteru Ishikawa; Wugen Pan; Yasuhisa Kaneko; Hiroyuki Yaguchi; Kentaro Onabe; Ryoichi Ito; Yasuhiro Shiraki
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Volume：37, Number：3 SUPPL. B, First page：1556, Last page：1558, Mar. 1998, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1143/JJAP.37.1556
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=0344002874&origin=inward
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DOI ID：10.1143/JJAP.37.1556, ISSN：0021-4922, ORCID：30384867, SCOPUS ID：0344002874, Web of Science ID：WOS:000073664900113 - Metalorganic vapor phase epitaxy growth of high quality cubic GaN on GaAs (100) substrates
Jun Wu; Hiroyuki Yaguchi; Kentaro Onabe; Yasuhiro Shiraki; Ryoichi Ito
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Volume：37, Number：3 SUPPL. B, First page：1440, Last page：1442, Mar. 1998, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1143/JJAP.37.1440
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DOI ID：10.1143/JJAP.37.1440, ISSN：0021-4922, ORCID：30384859, SCOPUS ID：0009207272, Web of Science ID：WOS:000073664900089 - GaAs/AlGaAs quantum structures grown in tetrahedral-shaped recesses on GaAs (111)B substrates by metalorganic vapor phase epitaxy
Tomoko Tsujikawa; Keishi Momma; Hiroyuki Yaguchi; Kentaro Onabe; Yasuhiro Shiraki; Ryoichi Ito
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Volume：37, Number：3 SUPPL. B, First page：1493, Last page：1496, Mar. 1998, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1143/JJAP.37.1493
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DOI ID：10.1143/JJAP.37.1493, ISSN：0021-4922, ORCID：30384856, SCOPUS ID：0043230458, Web of Science ID：WOS:000073664900101 - Self-assembled, very long II-VI semiconductor quantum wires
B. P. Zhang; W. X. Wang; T. Yasuda; Y. Segawa; H. Yaguchi; K. Onabe; K. Edamatsu; T. Itoh
Materials Science and Engineering B, Volume：51, Number：1-3, First page：224, Last page：228, Feb. 1998, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1016/S0921-5107(97)00265-1
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DOI ID：10.1016/S0921-5107(97)00265-1, ISSN：0921-5107, ORCID：30384869, SCOPUS ID：0342391357, Web of Science ID：WOS:000072728800048 - Molecular beam epitaxy of SiGe heterostructures using a newly designed Si effusion cell
H. Yaguchi; T. Yamamoto; Y. Shiraki
Materials Science and Engineering B, Volume：51, Number：1-3, First page：170, Last page：172, Feb. 1998, [Reviewed], [Lead]
English, Scientific journal
DOI：https://doi.org/10.1016/S0921-5107(97)00254-7
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=0347486931&origin=inward
DOI ID：10.1016/S0921-5107(97)00254-7, ISSN：0921-5107, ORCID：48141848, SCOPUS ID：0347486931, Web of Science ID：WOS:000072728800037 - A new approach to ZnCdSe quantum dots
B. P. Zhang; T. Yasuda; W. X. Wang; Y. Segawa; K. Edamatsu; T. Itoh; H. Yaguchi; K. Onabe
Materials Science and Engineering B, Volume：51, Number：1-3, First page：127, Last page：131, Feb. 1998, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1016/S0921-5107(97)00245-6
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Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=0031997271&origin=inward
DOI ID：10.1016/S0921-5107(97)00245-6, ISSN：0921-5107, ORCID：56291699, SCOPUS ID：0031997271, Web of Science ID：WOS:000072728800028 - Exciton diffusion dynamics in quantum nanostructures on V-groove patterned substrates
N. Usami; Y. Shiraki; W. Pan; H. Yaguchi; K. Onabe
Superlattices and Microstructures, Volume：23, Number：2, First page：395, Last page：400, 1998, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1006/spmi.1996.0285
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J. Wu; H. Yaguchi; K. Onabe; Y. Shiraki
Applied Physics Letters, Volume：73, Number：14, First page：1931, Last page：1933, 1998, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1063/1.122326
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DOI ID：10.1063/1.122326, ISSN：0003-6951, CiNii Articles ID：80010580213, ORCID：56291775, SCOPUS ID：0032487237, Web of Science ID：WOS:000076183300003 - カソ-ドルミネツセンスによる半導体低次元構造の評価 (日本電子顕微鏡学会第43回シンポジウム論文集--21世紀へ向けての新技術の展開--平成10年10月28日(水)〜30日(金),千葉大学けやき会館〔含 著者名索引〕) -- (ワ-クショップ カソ-ドルミネッセンスを使った機能評価法の発展)
矢口 裕之; 辻川 智子; 尾鍋 研太郎
Volume：33, Number：2, First page：217, Last page：220, 1998
Japanese
ISSN：0417-0326, CiNii Articles ID：40002545376, CiNii Books ID：AN00145000 - Metalorganic vapor phase epitaxy growth and photoluminescence properties of cubic Al
x Ga1-x N
J. Wu; H. Yaguchi; K. Onabe; Y. Shiraki
Applied Physics Letters, Volume：73, Number：2, First page：193, Last page：195, 1998, [Reviewed]
English, Scientific journal
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DOI ID：10.1063/1.121752, ISSN：0003-6951, ORCID：30384858, SCOPUS ID：0000148788, Web of Science ID：WOS:000075275400021 - The optical process in AlInP/GaInP/AlInP quantum wells (vol 80, pg 4592, 1996)
Y Ishitani; S Minagawa; T Kita; T Nishino; H Yaguchi; Y Shiraki
JOURNAL OF APPLIED PHYSICS, Volume：82, Number：11, First page：5876, Last page：5876, Dec. 1997, [Reviewed]
English, Scientific journal
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DOI ID：10.1063/1.366457, ISSN：0021-8979, ORCID：30384885, Web of Science ID：WOS:A1997YH59000089 - Growth mechanism in the metalorganic vapor phase epitaxy of metastable GaP
1-x Nx alloys: A growth interruption study
Seiro Miyoshi; Hiroyuki Yaguchi; Kentaro Onabe; Yasuhiro Shiraki; Ryoichi Ito
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Volume：36, Number：12 A, First page：7110, Last page：7118, Dec. 1997, [Reviewed]
Scientific journal
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Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=0031376350&origin=inward
DOI ID：10.1143/JJAP.36.7110, ISSN：0021-4922, ORCID：30384876, SCOPUS ID：0031376350, Web of Science ID：WOS:000071543500005 - Self formation and optical properties of II-VI semiconductor wire structures
Baoping Zhang; Wenxin Wang; Takashi Yasuda; Yanqiu Li; Yusaburo Segawa; Hiroyuki Yaguchi; Kentaro Onabe; Keiichi Edamatsu; Tadashi Itoh
Japanese Journal of Applied Physics, Part 2: Letters, Volume：36, Number：11 SUPPL. B, First page：L1490, Last page：L1493, Nov. 1997, [Reviewed]
English, Scientific journal
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Y Ishitani; H Hamada; S Minagawa; H Yaguchi; Y Shiraki
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Volume：36, Number：11, First page：6607, Last page：6613, Nov. 1997, [Reviewed]
English, Scientific journal
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Xiong Zhang; Mitsuteru Ishikawa; Hiroyuki Yaguchi; Kentaro Onabe
Surface Science, Volume：387, Number：1-3, First page：371, Last page：382, Oct. 1997, [Reviewed]
English, Scientific journal
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J Wu; H Yaguchi; K Onabe; R Ito; Y Shiraki
APPLIED PHYSICS LETTERS, Volume：71, Number：15, First page：2067, Last page：2069, Oct. 1997, [Reviewed]
English, Scientific journal
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Jun Wu; Hiroyuki Yaguchi; Hiroyuki Nagasawa; Yoichi Yamaguchi; Kentaro Onabe; Yasuhiro Shiraki; Ryoichi Ito
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Volume：36, Number：7 A, First page：4241, Last page：4245, Jul. 1997, [Reviewed]
English, Scientific journal
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Tomoko Tsujikawa; Wugen Pan; Keishi Momma; Masahiro Kudo; Kunio Tanaka; Hiroyuki Yaguchi; Kentaro Onabe; Yasuhiro Shiraki; Ryoichi Ito
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Volume：36, Number：6 SUPPL. B, First page：4102, Last page：4106, Jun. 1997, [Reviewed]
English, Scientific journal
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BP Zhang; T Yasuda; Y Segawa; H Yaguchi; K Onabe; E Edamatsu; T Itoh
APPLIED PHYSICS LETTERS, Volume：70, Number：18, First page：2413, Last page：2415, May 1997, [Reviewed]
English, Scientific journal
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Hiroyuki Yaguchi; Seiro Miyoshi; Hideo Arimoto; Shiro Saito; Hidefumi Akiyama; Kentaro Onabe; Yasuhiro Shiraki; Ryoichi Ito
Solid-State Electronics, Volume：41, Number：2 SPEC. ISS., First page：231, Last page：233, Feb. 1997, [Reviewed], [Lead]
English, Scientific journal
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Hiroyuki Yaguchi; Seiro Miyoshi; Goshi Biwa; Masaya Kibune; Kentaro Onabe; Yasuhiro Shiraki; Ryoichi Ito
Journal of Crystal Growth, Volume：170, Number：1-4, First page：353, Last page：356, Jan. 1997, [Reviewed], [Lead]
English, Scientific journal
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N. Hiroyasu; H. Yaguchi; K. Onabe; Y. Shiraki; R. Ito
Institute of Physics Conference Series, Volume：155, First page：771, Last page：774, 1997
Scientific journal
ORCID：56291697, Web of Science ID：WOS:A1997BJ12N00181 - A highly luminescent crescent-shaped tensile-strained GaAsP/AlGaAs quantum wire laser structure
Wugen Pan; Hiroyuki Yaguchi; Yoshihiko Hanamaki; Mitsuteru Ishikawa; Yasuhisa Kaneko; Kentaro Onabe; Ryoichi Ito; Yasuhiro Shiraki
Journal of Crystal Growth, Volume：170, Number：1-4, First page：585, Last page：589, Jan. 1997, [Reviewed]
English, Scientific journal
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B. P. Zhang; W. X. Wang; G. Isoya; T. Yasuda; Y. Segawa; H. Yaguchi; K. Onabe; K. Edamatsu; T. Itoh
Nonlinear Optics, Volume：18, Number：2-4, First page：133, Last page：136, 1997
Scientific journal
ORCID：48141781, SCOPUS ID：0031347795 - MOVPE Growth of GaPAsN Quaternary Alloys Lattice-Matched to GaP
Goshi Biwa; Hiroyuki Yaguchi; Kentaro Onabe; Yasuhiro Shiraki
MRS Proceedings, Volume：482, Jan. 1997
Scientific journal
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Y Ishitani; S Minagawa; T Kita; T Nishino; H Yaguchi; Y Shiraki
JOURNAL OF APPLIED PHYSICS, Volume：80, Number：8, First page：4592, Last page：4598, Oct. 1996, [Reviewed]
English, Scientific journal
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Baoping Zhang; Takanari Yasui; Takashi Yasuda; Yusaburo Segawa; Hiroyuki Yaguchi; Yasuhiro Shiraki
Solid State Communications, Volume：99, Number：12, First page：897, Last page：900, Sep. 1996, [Reviewed]
English, Scientific journal
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Wugen Pan; Hiroyuki Yaguchi; Kentaro Onabe; Ryoichi Ito; Noritaka Usami; Yasuhiro Shiraki
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Volume：35, Number：2 SUPPL. B, First page：1214, Last page：1216, Feb. 1996, [Reviewed]
English, Scientific journal
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M Mochizuki; K Kobayashi; H Yaguchi; T Saitoh; YM Xiong
INTERNATIONAL SYMPOSIUM ON POLARIZATION ANALYSIS AND APPLICATIONS TO DEVICE TECHNOLOGY, Volume：2873, First page：270, Last page：273, 1996
English, International conference proceedings
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CC Wong; M Mochizuki; H Yaguchi; T Saitoh; YM Xiong
INTERNATIONAL SYMPOSIUM ON POLARIZATION ANALYSIS AND APPLICATIONS TO DEVICE TECHNOLOGY, Volume：2873, First page：226, Last page：229, 1996
English, International conference proceedings
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Wugen Pan; Hiroyuki Yaguchi; Kentaro Onabe; Yasuhiro Shiraki; Ryoichi Ito
Journal of Crystal Growth, Volume：158, Number：3, First page：205, Last page：209, Jan. 1996, [Reviewed]
English, Scientific journal
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Yasuhiro SHIRAKI; Yi-Ming XIONG; HIROYUKI YAGUCHI
Extended Abstracts of the International Conference on Solid State Devices and Materials, 1996
Scientific journal
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DOI ID：10.7567/SSDM.1996.PD-7-3, ORCID：56291753 - Time-resolved photoluminescence study on AlxGa1-xAs spontaneous vertical quantum well structures
Noritaka Usami; Wugen Pan; Hiroyuki Yaguchi; Ryoichi Ito; Kentaro Onabe; Hidefumi Akiyama; Yasuhiro Shiraki
Applied Physics Letters, Volume：68, Number：23, First page：3221, Last page：3223, 1996, [Reviewed]
English, Scientific journal
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WG PAN; H YAGUCHI; K ONABE; R ITO; Y SHIRAKI
JOURNAL OF APPLIED PHYSICS, Volume：78, Number：5, First page：3517, Last page：3519, Sep. 1995, [Reviewed]
English, Scientific journal
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PAN Wugen; YAGUCHI Hiroyuki; ONABE Kentaro; ITO Ryoichi; USAMI Noritaka; SHIRAKI Yasuhiro
Volume：1995, First page：737, Last page：739, Aug. 1995
English
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Xiong Zhang; Koichi Karaki; Hiroyuki Yaguchi; Kentaro Onabe; Ryoichi Ito; Yasuhiro Shiraki
Applied Physics Letters, Volume：66, Number：2, First page：186, Last page：188, 1995, [Reviewed]
English, Scientific journal
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S MIYOSHI; H YAGUCHI; K ONABE; Y SHIRAKI; R ITO
COMPOUND SEMICONDUCTORS 1994, Volume：141, Number：141, First page：97, Last page：100, 1995, [Reviewed]
English, Scientific journal
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Wugen Pan; Hiroyuki Yaguchi; Kentaro Onabe; Ryoichi Ito; Yasuhiro Shiraki
Applied Physics Letters, Volume：67, Number：7, First page：959, Last page：961, 1995, [Reviewed]
English, Scientific journal
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Kazunobu Ota; Hiroyuki Yaguchi; Kentaro Onabe; Ryoichi Ito; Yasuhiro Shiraki
Journal of Crystal Growth, Volume：145, Number：1-4, First page：819, Last page：823, Dec. 1994, [Reviewed]
English, Scientific journal
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Wugen Pan; Hiroyuki Yaguchi; Kentaro Onabe; Kazumi Wada; Yasuhiro Shiraki; Ryoichi Ito
Journal of Crystal Growth, Volume：145, Number：1-4, First page：702, Last page：706, Dec. 1994, [Reviewed]
English, Scientific journal
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Masaki Nagahara; Seiro Miyoshi; Hiroyuki Yaguchi; Kentaro Onabe; Yasuhiro Shiraki; Ryoichi Ito
Journal of Crystal Growth, Volume：145, Number：1-4, First page：197, Last page：202, Dec. 1994, [Reviewed]
English, Scientific journal
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S MIYOSHI; H YAGUCHI; K ONABE; R ITO; Y SHIRAKI
JOURNAL OF CRYSTAL GROWTH, Volume：145, Number：1-4, First page：87, Last page：92, Dec. 1994, [Reviewed]
English, Scientific journal
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XN ZHANG; Y SHIRAKI; H YAGUCHI; K ONABE; R ITO
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Volume：12, Number：4, First page：2293, Last page：2298, Jul. 1994, [Reviewed]
English, Scientific journal
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Noriyuki Kuwano; Kenki Kobayashi; Kensuke Oki; Seiro Miyoshi; Hiroyuki Yaguchi; Kentaro Onabe; Yasuhiro Shiraki
Japanese Journal of Applied Physics, Volume：33, Number：6R, First page：3415, Last page：3416, Jun. 1994, [Reviewed]
Scientific journal
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H YAGUCHI; K TAI; K TAKEMASA; K ONABE; Y SHIRAKI; R ITO
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Volume：33, Number：4B, First page：2353, Last page：2356, Apr. 1994, [Reviewed], [Lead]
English, Scientific journal
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Hiroyuki Yaguchi; Kazunobu Ota; Yutaka Takahashi; Koji Muraki; Kentaro Onabe; Yasuhiro Shiraki; Ryoichi Ito
Solid State Electronics, Volume：37, Number：4-6, First page：915, Last page：918, 1994, [Reviewed], [Lead]
English, Scientific journal
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N KUWANO; K KOBAYASHI; Y TAKEICHI; K OKI; S MIYOSHI; H YAGUCHI; K ONABE; Y SHIRAKI
ELECTRON MICROSCOPY 1994, VOLS 2A AND 2B, First page：619, Last page：620, 1994, [Reviewed]
English, International conference proceedings
ORCID：56291582, Web of Science ID：WOS:A1994BE09Y00300 - TRANSMISSION ELECTRON-MICROSCOPE OBSERVATION OF CUBIC GAN GROWN BY METALORGANIC VAPOR-PHASE EPITAXY WITH DIMETHYLHYDRAZINE ON (001) GAAS
N KUWANO; Y NAGATOMO; K KOBAYASHI; K OKI; S MIYOSHI; H YAGUCHI; K ONABE; Y SHIRAKI
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Volume：33, Number：1A, First page：18, Last page：22, Jan. 1994, [Reviewed]
English, Scientific journal
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M NAGAHARA; S MIYOSHI; H YAGUCHI; K ONABE; Y SHIRAKI; R ITO
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Volume：33, Number：1B, First page：694, Last page：697, Jan. 1994, [Reviewed]
English, Scientific journal
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Xiong Zhang; Koichi Karaki; Hiroyuki Yaguchi; Kentaro Onabe; Ryoichi Ito; Yasuhiro Shiraki
Applied Physics Letters, Volume：64, Number：12, First page：1555, Last page：1557, 1994, [Reviewed]
Scientific journal
DOI：https://doi.org/10.1063/1.111991
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=0028385086&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=0028385086&origin=inward
DOI ID：10.1063/1.111991, ISSN：0003-6951, ORCID：30384907, SCOPUS ID：0028385086, Web of Science ID：WOS:A1994NB63900032 - Characterization of Ge/SiGe strained-barrier quantum-well structures using photoreflectance spectroscopy
H. Yaguchi; K. Tai; K. Takemasa; K. Onabe; R. Ito; Y. Shiraki
Physical Review B, Volume：49, Number：11, First page：7394, Last page：7399, 1994, [Reviewed]
Scientific journal
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Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=0039126902&origin=inward
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DOI ID：10.1103/PhysRevB.49.7394, ISSN：0163-1829, ORCID：30384900, SCOPUS ID：0039126902 - Self-modulating Sb incorporation in Si/SiGe superlattices during molecular beam epitaxial growth
K. Fujita; S. Fukatsu; N. Usami; Y. Shiraki; H. Yaguchi; R. Ito; K. Nakagawa
Surface Science, Volume：295, Number：3, First page：335, Last page：339, Oct. 1993, [Reviewed]
Scientific journal
DOI：https://doi.org/10.1016/0039-6028(93)90280-W
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=0027681891&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=0027681891&origin=inward
DOI ID：10.1016/0039-6028(93)90280-W, ISSN：0039-6028, CiNii Articles ID：80007270434, ORCID：56291770, SCOPUS ID：0027681891, Web of Science ID：WOS:A1993LZ22800011 - GAASP LAYERS GROWN ON (111)-ORIENTED GAAS SUBSTRATES BY METALORGANIC VAPOR-PHASE EPITAXY
ZHANG, X; K KARAKI; H YAGUCHI; K ONABE; Y SHIRAKI; R ITO
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, Volume：32, Number：6A, First page：L755, Last page：L757, Jun. 1993, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1143/JJAP.32.L755
DOI ID：10.1143/JJAP.32.L755, ISSN：0021-4922, ORCID：30384914, Web of Science ID：WOS:A1993LF97200001 - Metal-organic vapor phase epitaxy growth and optical study of gaas/gaas
1-x px , strained-barrier single quantum well structures
Xiong Zhang; Kentaro Onabe; Hiroyuki Yaguchi; Yasuhiro Shiraki; Ryoichi Ito
Japanese Journal of Applied Physics, Volume：32, Number：3 B, First page：L375, Last page：L378, Mar. 1993, [Reviewed]
Scientific journal
DOI：https://doi.org/10.1143/JJAP.32.L375
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84939370422&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84939370422&origin=inward
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K FUJITA; S FUKATSU; Y SHIRAKI; H YAGUCHI; R ITO
JOURNAL OF CRYSTAL GROWTH, Volume：127, Number：1-4, First page：416, Last page：420, Feb. 1993, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1016/0022-0248(93)90651-C
DOI ID：10.1016/0022-0248(93)90651-C, ISSN：0022-0248, Web of Science ID：WOS:A1993KZ45300088 - IS LOW-TEMPERATURE GROWTH THE SOLUTION TO ABRUPT SI/SI1-XGEX INTERFACE FORMATION
S FUKATSU; N USAMI; K FUJITA; H YAGUCHI; Y SHIRAKI; R ITO
JOURNAL OF CRYSTAL GROWTH, Volume：127, Number：1-4, First page：401, Last page：405, Feb. 1993, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1016/0022-0248(93)90648-G
DOI ID：10.1016/0022-0248(93)90648-G, ISSN：0022-0248, Web of Science ID：WOS:A1993KZ45300085 - Highly conductive p-type cubic GaN epitaxial films on GaAs
S. Miyoshi; N. Ohkouchi; H. Yaguchi; K. Onabe; Y. Shiraki; R. Ito
Volume：129, First page：79, Last page：84, 1993, [Reviewed] - Characterization of Interface Roughness in Ge/SiGe Heterostructures Using Photoreflectance Spectroscopy
Yasuhiro SHIRAKI; Keizo TAKEMASA; Ryoichi ITO; Kentaro ONABE; Kaori TAI; HIROYUKI YAGUCHI
Extended Abstracts of the International Conference on Solid State Devices and Materials, 1993
Scientific journal
DOI：https://doi.org/10.7567/SSDM.1993.S-I-6-6
DOI ID：10.7567/SSDM.1993.S-I-6-6, ORCID：56291716 - SELF-MODULATING INCORPORATION OF SB IN SI/SIGE, SUPERLATTICES DURING MOLECULAR-BEAM EPITAXIAL-GROWTH
K FUJITA; S FUKATSU; N USAMI; H YAGUCHI; Y SHIRAKI; R ITO
SHALLOW IMPURITIES IN SEMICONDUCTORS, Volume：117, First page：159, Last page：164, 1993, [Reviewed]
English, International conference proceedings
DOI：https://doi.org/10.4028/www.scientific.net/MSF.117-118.159
DOI ID：10.4028/www.scientific.net/MSF.117-118.159, ISSN：0255-5476, ORCID：30384921, Web of Science ID：WOS:A1993BZ20P00024 - PHOTOREFLECTANCE STUDY OF GAAS/GAASP STRAINED-BARRIER QUANTUM-WELL STRUCTURES
H YAGUCHI; ZHANG, X; K OTA; M NAGAHARA; K ONABE; Y SHIRAKI; R ITO
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Volume：32, Number：1B, First page：544, Last page：547, Jan. 1993, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1143/JJAP.32.544
DOI ID：10.1143/JJAP.32.544, ISSN：0021-4922, ORCID：30384920, Web of Science ID：WOS:A1993KQ00300059 - Observation of the valence-subband level crossing in GaAs/GaAsP strained-barrier quantum well structures using circularly polarized photoluminescence excitation spectroscopy
Kazunobu Ota; Hiroyuki Yaguchi; Kentaro Onabe; Ryoichi Ito; Yutaka Takahashi; Koji Muraki; Yasuhiro Shiraki
Applied Physics Letters, Volume：63, Number：7, First page：946, Last page：948, 1993, [Reviewed]
Scientific journal
DOI：https://doi.org/10.1063/1.109853
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=36448998505&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=36448998505&origin=inward
DOI ID：10.1063/1.109853, ISSN：0003-6951, ORCID：30384919, SCOPUS ID：36448998505 - Metalorganic vapor phase epitaxy of GaP
1-x Nx alloys on GaP
S. Miyoshi; H. Yaguchi; K. Onabe; R. Ito; Y. Shiraki
Applied Physics Letters, Volume：63, Number：25, First page：3506, Last page：3508, 1993, [Reviewed]
Scientific journal
DOI：https://doi.org/10.1063/1.110109
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=0346589553&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=0346589553&origin=inward
DOI ID：10.1063/1.110109, ISSN：0003-6951, ORCID：30384918, SCOPUS ID：0346589553 - MOVPE GROWTH OF CUBIC GAN ON GAAS USING DIMETHYLHYDRAZINE
S MIYOSHI; K ONABE; N OHKOUCHI; H YAGUCHI; R ITO; S FUKATSU; Y SHIRAKI
JOURNAL OF CRYSTAL GROWTH, Volume：124, Number：1-4, First page：439, Last page：442, Nov. 1992, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1016/0022-0248(92)90497-7
DOI ID：10.1016/0022-0248(92)90497-7, ISSN：0022-0248, Web of Science ID：WOS:A1992KB90500070 - Initial oxidation of MBE-grown Si( 100) surfaces
Yaguchi Hiroyuki; Fujita Ken; Fukatsu Susumu; Shiraki Yasuhiro; Ito Ryoichi; Igarashi Takayuki; Hattori Takeo
Surface Science, Volume：275, Number：3, First page：395, Last page：400, Sep. 1992, [Reviewed], [Lead]
Scientific journal
DOI：https://doi.org/10.1016/0039-6028(92)90811-J
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=0026918085&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=0026918085&origin=inward
DOI ID：10.1016/0039-6028(92)90811-J, ISSN：0039-6028, SCOPUS ID：0026918085 - ATOMISTIC PICTURE OF INTERFACIAL MIXING IN THE SI/GE HETEROSTRUCTURES
S FUKATSU; K FUJITA; H YAGUCHI; Y SHIRAKI; R ITO
SURFACE SCIENCE, Volume：267, Number：1-3, First page：79, Last page：82, Apr. 1992, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1016/0039-6028(92)91093-Q
DOI ID：10.1016/0039-6028(92)91093-Q, ISSN：0039-6028, Web of Science ID：WOS:A1992HM90100022 - Photoreflectance Study of GaAs/GaAsP Strained-Barrier Quantum Well Structures
Hiroyuki YAGUCHI; Xiong ZHANG; Kentaro ONABE; Yasuhiro SHIRAKI; Ryoichi ITO
Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials, First page：589, Last page：591, 1992, [Reviewed]
The Japan Society of Applied Physics, English, International conference proceedings
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Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=0027002314&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=0027002314&origin=inward
DOI ID：10.7567/ssdm.1992.b-4-5, SCOPUS ID：0027002314 - Intersubbband absorption in narrow Si/SiGe multiple quantum wells without interfacial smearing
K. Fujita; S. Fukatsu; Y. Shiraki; H. Yaguchi; R. Ito
Applied Physics Letters, Volume：61, Number：2, First page：210, Last page：212, 1992, [Reviewed]
English, Scientific journal
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Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=0346609110&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=0346609110&origin=inward
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1-x Gex /Si(100) heterostructures by annealing
Hiroyuki Yaguchi; Ken Fujita; Susumu Fukatsu; Yasuhiro Shiraki; Ryoichi Ito
Japanese Journal of Applied Physics, Part 2: Letters, Volume：30, Number：8 B, First page：L1450, Last page：L1453, 1991, [Reviewed]
English, Scientific journal
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Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=0026207085&origin=inward
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DOI ID：10.1143/JJAP.30.L1450, ISSN：0021-4922, ORCID：30384929, SCOPUS ID：0026207085 - Self-limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth
S. Fukatsu; K. Fujita; H. Yaguchi; Y. Shiraki; R. Ito
Applied Physics Letters, Volume：59, Number：17, First page：2103, Last page：2105, 1991, [Reviewed]
Scientific journal
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DOI ID：10.1063/1.106412, ISSN：0003-6951, ORCID：30384928, SCOPUS ID：36449004565 - Involvement of the topmost Ge layer in the Ge surface segregation during Si/Ge heterostructure formation
K. Fujita; S. Fukatsu; H. Yaguchi; Y. Shiraki; R. Ito
Applied Physics Letters, Volume：59, Number：18, First page：2240, Last page：2241, 1991, [Reviewed]
English, Scientific journal
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Ken Fujita; Susumu Fukatsu; Hiroyuki Yaguchi; Takayuki Igarashi; Yasuhiro Shiraki; Ryoichi Ito
Japanese Journal of Applied Physics, Volume：29, Number：11, First page：L1981, Last page：L1983, Nov. 1990, [Reviewed]
Scientific journal
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Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=3743115953&origin=inward
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K. FUJITA; S. FUKATSU; H. YAGUCHI; T. IGARASHI; Y. SHIRAKI; R. ITO
Extended Abstracts of the 1990 International Conference on Solid State Devices and Materials, First page：1151, Last page：1152, 1990, [Reviewed]
The Japan Society of Applied Physics, English, International conference proceedings
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H. Yaguchi; S. Baba; A. Kinbara
Applied Surface Science, Volume：33-34, Number：C, First page：75, Last page：80, Sep. 1988, [Reviewed]
English, Scientific journal
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H. Yaguchi; S. Baba; A. Kinbara
表面科学, Volume：9, Number：5, First page：368, Last page：373, 1988, [Reviewed]
Scientific journal
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Hiroyuki YAGUCHI; Shigeru BABA; Akira KINBARA
SHINKU, Volume：31, Number：5, First page：399, Last page：401, 1988, [Reviewed]
The Vacuum Society of Japan, Japanese, Scientific journal
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宮寺哲彦; 阿内悠人; 小金澤智之; 矢口裕之; 吉田郵司; 近松真之
Volume：67, Number：2, 2018
J-Global ID：201802238290737286 - GaPN混晶のアップコンバージョン発光
高橋渉; 高宮健吾; 八木修平; 伊藤隆; 秋山英文; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：78th, First page：ROMBUNNO.6p‐PA7‐1, 25 Aug. 2017
Japanese
J-Global ID：201702255331459722 - 新規可溶性オリゴチオフェン系電子ドナー材料を用いた有機薄膜太陽電池への溶媒蒸気アニーリング効果
秋山雄希; 秋山雄希; 橘浩昭; 阿澄玲子; 宮寺哲彦; 近松真之; 八木修平; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：78th, First page：ROMBUNNO.5p‐PA3‐7, 25 Aug. 2017
Japanese
J-Global ID：201702271908434102 - 希釈窒化物半導体中の窒素原子配置によるバンドギャップへの影響
宮島数喜; 八木修平; 庄司靖; 岡田至崇; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：78th, First page：ROMBUNNO.5p‐C21‐1, 25 Aug. 2017
Japanese
J-Global ID：201702278507065273 - ErドープGaAsからの発光のMBE成長温度依存性
五十嵐大輔; 高宮健吾; 八木修平; 伊藤隆; 秋山英文; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Volume：64th, First page：ROMBUNNO.17p‐P2‐8, 01 Mar. 2017
Japanese
J-Global ID：201702218011102092 - 1eV帯InGaAs:Nδドープ超格子の作製
梅田峻平; 八木修平; 宮下直也; 岡田至崇; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Volume：64th, First page：ROMBUNNO.14p‐B6‐9, 01 Mar. 2017
Japanese
J-Global ID：201702242750399704 - n型GaAs:Nδドープ超格子の電気的特性評価
加藤諒; 八木修平; 岡田至崇; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Volume：64th, First page：ROMBUNNO.15p‐P16‐8, 01 Mar. 2017
Japanese
J-Global ID：201702266277509859 - DRCN5T/PCBMバルクヘテロ接合膜の溶媒蒸気アニーリング過程のその場観察
新井康司; 新井康司; 宮寺哲彦; 小金澤智之; 秋山雄希; 秋山雄希; 橘浩昭; 吉田郵司; 近松真之; 八木修平; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Volume：64th, First page：ROMBUNNO.16p‐F201‐3, 01 Mar. 2017
Japanese
ISSN：2436-7613, J-Global ID：201702283758456263 - ルブレン単結晶上の有機鉛ペロブスカイトのエピタキシャル成長
阿内悠人; 阿内悠人; 宮寺哲彦; 小金澤智之; 近松真之; 吉田郵司; 矢口裕之
Volume：64th, 2017
ISSN：2436-7613, J-Global ID：201702243313040023 - 4H‐SiC微傾斜基板上に作製した自己組織化InN/GaNドットの配列性制御
松岡圭佑; 八木修平; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：77th, First page：ROMBUNNO.16a‐P5‐11, 01 Sep. 2016
Japanese
J-Global ID：201602236541953232 - レーザ照射によるGaInNAs混晶半導体の発光効率への影響
米倉成一; 高宮健吾; 八木修平; 上田修; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：77th, First page：ROMBUNNO.15a‐P11‐11, 01 Sep. 2016
Japanese
J-Global ID：201602248642339078 - 新規可溶性オリゴチオフェン系電子ドナー材料を用いた有機薄膜太陽電池
秋山雄希; 秋山雄希; 橘浩昭; 阿澄玲子; 宮寺哲彦; 近松真之; 小金澤智之; 矢口裕之; 八木修平
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：77th, First page：ROMBUNNO.13p‐P9‐11, 01 Sep. 2016
Japanese
ISSN：2436-7613, J-Global ID：201602279619229573 - 添加剤導入によるP3HT薄膜の結晶成長過程のその場観察評価
新井康司; 新井康司; 宮寺哲彦; 小金澤智之; 秋山雄希; 秋山雄希; 杉田武; 近松真之; 八木修平; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Volume：63rd, First page：ROMBUNNO.19P-W242-6, 03 Mar. 2016
Japanese
ISSN：2436-7613, J-Global ID：201602206159061072 - MgO微傾斜基板上に作製した立方晶InNドット配列構造の堆積量依存性
石井健一; 八木修平; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Volume：63rd, First page：ROMBUNNO.22A-P6-10, 03 Mar. 2016
Japanese
J-Global ID：201602218989088990 - 4H‐SiC基板の二波長励起PL測定―BGE強度依存性―
近藤圭太郎; 福田武司; 本多善太郎; 鎌田憲彦; 八木修平; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Volume：63rd, First page：ROMBUNNO.20A-H101-9, 03 Mar. 2016
Japanese
J-Global ID：201602220555984119 - Investigation of SiC/Oxide Interface Structures by Spectroscopic Ellipsometry
Sadafumi Yoshida; Yasuto Hijikata; Hiroyuki Yaguchi
Advanced Silicon Carbide Devices and Processing, Sep. 2015
{InTech}
DOI：https://doi.org/10.5772/61082
DOI ID：10.5772/61082, ORCID put code：79779725 - AlAs/GaAs分布ブラッグ反射鏡を有するEr δドープGaAsの発光特性
須藤真樹; JIN R.G; 高宮健吾; 八木修平; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：76th, First page：ROMBUNNO.13P-PB2-5, 31 Aug. 2015
Japanese
J-Global ID：201502200169002575 - フォトルミネッセンス法による4H‐SiCエピ層中の酸化誘因欠陥の観察
浅藤亮祐; 八木修平; 土方泰斗; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：76th, First page：ROMBUNNO.15A-1A-11, 31 Aug. 2015
Japanese
J-Global ID：201502200868414404 - 第一原理計算によるGaAs:Nδドープ超格子における光学遷移に関する研究
吉川洋生; 八木修平; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：76th, First page：ROMBUNNO.13P-PB2-2, 31 Aug. 2015
Japanese
J-Global ID：201502202887386651 - 微傾斜基板を用いたシングルドメイン立方晶GaNの成長と立方晶InNドット配列の形成
石井健一; 折原操; 八木修平; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：76th, First page：ROMBUNNO.14P-PB12-19, 31 Aug. 2015
Japanese
J-Global ID：201502207396200760 - 第一原理計算によるInAsN混晶の伝導帯の解析
宮崎貴史; 八木修平; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：76th, First page：ROMBUNNO.13P-PB2-1, 31 Aug. 2015
Japanese
J-Global ID：201502207598351728 - GaAs MBE成長におけるEr原子の表面偏析の温度依存性
JIN R; 高宮健吾; 八木修平; 土方泰斗; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：76th, First page：ROMBUNNO.13P-PB2-3, 31 Aug. 2015
Japanese
J-Global ID：201502215233126671 - ErドープGaAsからの発光に対する低温成長の影響
飯村啓泰; JIN R.G; 高宮健吾; 八木修平; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：76th, First page：ROMBUNNO.13P-PB2-4, 31 Aug. 2015
Japanese
J-Global ID：201502221370971885 - 円偏光PLEによるGe直接遷移端への光スピン注入
安武裕輔; 安武裕輔; 太野垣健; 太野垣健; 大川洋平; 矢口裕之; 金光義彦; 深津晋
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：76th, First page：ROMBUNNO.14A-2N-8, 31 Aug. 2015
Japanese
J-Global ID：201502209609017925 - GaAs:Nδドープ超格子を有する太陽電池の二段階光吸収
鈴木智也; 八木修平; 土方泰斗; 岡田至崇; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Volume：62nd, First page：ROMBUNNO.13P-P19-17, 26 Feb. 2015
Japanese
J-Global ID：201502212728546006 - 4H‐SiC(0001)微傾斜基板を用いたInNドット配列の自己形成
森誠也; 高宮健吾; 折原操; 八木修平; 土方泰斗; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Volume：62nd, First page：ROMBUNNO.12P-P16-9, 26 Feb. 2015
Japanese
J-Global ID：201502237562705111 - 第一原理計算によるInAsN混晶のバンド構造に関する研究
宮崎貴史; 八木修平; 土方泰斗; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Volume：62nd, First page：ROMBUNNO.13A-P15-2, 26 Feb. 2015
Japanese
J-Global ID：201502238490747422 - 添加剤導入によるP3HT:PCBM混合膜の結晶成長過程のその場観察評価
新井康司; 新井康司; 柴田陽生; 伊藤英輔; 小金澤智之; 宮寺哲彦; 宮寺哲彦; 近松真之; 矢口裕之
Volume：62nd, 2015
J-Global ID：201502277517255255 - 中間バンド型太陽電池に向けたGaAs:Nδドープ超格子のMBE成長
鈴木智也; 長田一輝; 八木修平; 内藤駿弥; 土方泰斗; 岡田至崇; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：75th, First page：ROMBUNNO.19P-PB3-10, 01 Sep. 2014
Japanese
J-Global ID：201402204873316264 - SiC酸化へのArアニール導入による酸化膜成長速度の変化
今野良太郎; 八木修平; 土方泰斗; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：75th, First page：ROMBUNNO.19A-PB5-11, 01 Sep. 2014
Japanese
J-Global ID：201402218643252926 - GaAs:Nδドープ超格子による中間バンド構造のエネルギー制御
長田一輝; 鈴木智也; 八木修平; 内藤駿弥; 庄司靖; 岡田至崇; 土方泰斗; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：75th, First page：ROMBUNNO.19A-S1-6, 01 Sep. 2014
Japanese
J-Global ID：201402223396439019 - Geの磁場中時間分解円偏光フォトルミネッセンス
安武裕輔; 矢口裕之; 深津晋
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：75th, First page：ROMBUNNO.17P-PA3-7, 01 Sep. 2014
Japanese
J-Global ID：201402279887395531 - RF‐MBE法によるGaAs(110)基板上へのGaNの成長
五十嵐健; 折原操; 八木修平; 土方泰斗; 窪谷茂幸; 片山竜二; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Volume：61st, First page：ROMBUNNO.20A-PG1-15, 03 Mar. 2014
Japanese
J-Global ID：201402228659986330 - 二波長励起PLによるGaPN混晶の光学特性評価
末次麻希子; TOUHIDUL ISLAM A.Z.M; 花岡司; 福田武司; 鎌田憲彦; 八木修平; 矢口裕之
照明学会全国大会講演論文集(CD-ROM), Volume：47th, First page：ROMBUNNO.10-3, 2014
Japanese
J-Global ID：201402295481095788 - 六方晶SiC無極性面の酸化過程の実時間観察
後藤大祐; 八木修平; 土方泰斗; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：74th, First page：ROMBUNNO.19A-P9-4, 31 Aug. 2013
Japanese
J-Global ID：201302203339195393 - 窒素δドープGaAs中の単一等電子トラップによる励起子分子発光の時間分解フォトルミネッセンス測定
高宮健吾; 八木修平; 土方泰斗; 望月敏光; 吉田正裕; 秋山英文; 窪谷茂幸; 片山竜二; 尾鍋研太郎; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：74th, First page：ROMBUNNO.19A-P8-11, 31 Aug. 2013
Japanese
J-Global ID：201302208930844769 - GaInNAs量子井戸の発光効率へのレーザー照射の影響
岩崎卓也; 八木修平; 土方泰斗; 上田修; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：74th, First page：ROMBUNNO.19A-P8-13, 31 Aug. 2013
Japanese
J-Global ID：201302210710989914 - GaAsN/GaAs量子井戸構造からの発光の励起強度依存性
山崎泰由; 八木修平; 土方泰斗; 尾鍋研太郎; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：74th, First page：ROMBUNNO.19A-P8-14, 31 Aug. 2013
Japanese
J-Global ID：201302253457891105 - GaAs:Nδドープ超格子を用いた中間バンド型太陽電池の特性評価
八木修平; 野口駿介; 土方泰斗; 窪谷茂幸; 尾鍋研太郎; 岡田至崇; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：74th, First page：ROMBUNNO.17P-D6-14, 31 Aug. 2013
Japanese
J-Global ID：201302263267421817 - InN/GaNドット多重積層構造に向けたGaNキャップ層成長条件の検討
徳田英俊; 折原操; 八木修平; 土方泰斗; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：74th, Number：8, First page：ROMBUNNO.17P-P7-15, Last page：08JL06-4, 31 Aug. 2013
Creation of short-period InN/GaN superlattices is one of the possible ways of conducting band gap engineering in the green-blue range of the spectrum. The present paper reports results of photoluminescence experiments, including pressure effects, on a superlattice sample consisting of unit cells with one monolayer of InN and 40 monolayers of GaN. The results are compared with calculations performed for different types of superlattices: InN/GaN, InGaN/GaN, and InN/InGaN/GaN with single monolayers of InN and/or InGaN. The superlattices are simulated by band structure calculations based on the local density approximation (LDA) with a semi-empirical correction for the ``LDA gap error''. A similarity is observed between the results of calculations for an InGaN/GaN superlattice (with one monolayer of InGaN) and the experimental results. This indicates that the fabricated InN quantum wells may contain some Ga atoms due to interdiffusion.
The Japan Society of Applied Physics, Japanese
DOI：https://doi.org/10.7567/JJAP.52.08JL06
DOI ID：10.7567/JJAP.52.08JL06, ISSN：0021-4922, J-Global ID：201302285385764625, CiNii Articles ID：40019758965, CiNii Books ID：AA12295836 - Ge/SiGe多重量子井戸への室温光スピン注入
安武裕輔; 矢口裕之; 深津晋
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：74th, First page：ROMBUNNO.16P-C15-3, 31 Aug. 2013
Japanese
J-Global ID：201302231556794835 - An attempt for clarification of SiC oxidation mechanism : Common/different point to Si oxidation
HIJIKATA Yasuto; YAGI Shuhei; YAGUCHI Hiroyuki
Technical report of IEICE. SDM, Volume：113, Number：87, First page：91, Last page：96, 18 Jun. 2013
Further understanding of the SiC oxidization mechanism is indispensable for MOSFET using a SiC semiconductor to exceed the conventional Si-based power devices. In this report, we summarize what have been found so far about the oxidization mechanism of SiC, and the research tendency and its subjects in recent years are introduced in terms of common or difference against Si oxidization.
The Institute of Electronics, Information and Communication Engineers, Japanese
ISSN：0913-5685, CiNii Articles ID：110009779110, CiNii Books ID：AN10013254 - RF‐MBE法による立方晶InNドット積層構造の作製
鈴木潤一郎; 折原操; 八木修平; 土方泰斗; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Volume：60th, First page：ROMBUNNO.28P-PA1-1, 11 Mar. 2013
Japanese
J-Global ID：201302223183186110 - 4H‐SiCエピ膜中積層欠陥への熱酸化の影響について
宮野祐太郎; 八木修平; 土方泰斗; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Volume：60th, First page：ROMBUNNO.29P-PB4-9, 11 Mar. 2013
Japanese
J-Global ID：201302267568241755 - 中間バンド型太陽電池へ向けたGaAs中窒素ドープ超格子のE+バンド光吸収の観測
野口駿介; 八木修平; 土方泰斗; 窪谷茂幸; 岡田至崇; 尾鍋研太郎; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Volume：60th, First page：ROMBUNNO.29A-PB7-19, 11 Mar. 2013
Japanese
J-Global ID：201302299241158730 - Thermal Oxidation Mechanism of Silicon Carbide
Yasuto Hijikata; Shuhei Yagi; Hiroyuki Yaguchi; Sadafumi Yoshi
Physics and Technology of Silicon Carbide Devices, Oct. 2012
{InTech}
DOI：https://doi.org/10.5772/50748
DOI ID：10.5772/50748, ORCID put code：79780638 - Nondestructive and Contactless Characterization Method for Spatial Mapping of the Thickness and Electrical Properties in Homo-Epitaxially Grown SiC Epilayers Using Infrared Reflectance Spectroscopy
Sadafumi Yoshida; Yasuto Hijikata; Hiroyuki Yaguchi
Physics and Technology of Silicon Carbide Devices, Oct. 2012
{InTech}
DOI：https://doi.org/10.5772/50749
DOI ID：10.5772/50749, ORCID put code：79780627 - スパッタ薄膜成長による4H‐SiC基板中の非発光再結合中心生成
加藤寿悠; 八木修平; 土方泰斗; 矢口裕之
応用物理学会学術講演会講演予稿集(CD-ROM), Volume：73rd, First page：ROMBUNNO.11P-PB2-12, 27 Aug. 2012
Japanese
J-Global ID：201202222514720266 - 堆積と熱酸化による4H‐SiC MOS構造の作製
大谷篤志; 八木修平; 土方泰斗; 矢口裕之
応用物理学会学術講演会講演予稿集(CD-ROM), Volume：73rd, First page：ROMBUNNO.11P-PB2-4, 27 Aug. 2012
Japanese
J-Global ID：201202230425306688 - InN成長におけるInN高温バッファ層の効果に関する検討
増田篤; 折原操; 八木修平; 土方泰斗; 矢口裕之
応用物理学会学術講演会講演予稿集(CD-ROM), Volume：73rd, First page：ROMBUNNO.12A-PB4-11, 27 Aug. 2012
Japanese
J-Global ID：201202235572897960 - 第一原理計算によるGaAsNの電子構造に対する原子配置の影響に関する研究
坂本圭; 八木修平; 土方泰斗; 矢口裕之
応用物理学会学術講演会講演予稿集(CD-ROM), Volume：73rd, First page：ROMBUNNO.12A-PB4-22, 27 Aug. 2012
Japanese
J-Global ID：201202252900504833 - 窒素δドープGaAs中の単一等電子トラップからの発光のフォトルミネッセンス励起分光測定
高宮健吾; 八木修平; 土方泰斗; 望月敏光; 吉田正裕; 秋山英文; 窪谷茂幸; 尾鍋研太郎; 片山竜二; 矢口裕之
応用物理学会学術講演会講演予稿集(CD-ROM), Volume：73rd, First page：ROMBUNNO.12P-PB11-20, 27 Aug. 2012
Japanese
J-Global ID：201202257209482469 - MBE法によるGaAs(001)基板上へのErGaAs混晶の成長
JIN R; 八木修平; 土方泰斗; 窪谷茂幸; 尾鍋研太郎; 片山竜二; 矢口裕之
応用物理学会学術講演会講演予稿集(CD-ROM), Volume：73rd, First page：ROMBUNNO.12P-PB11-16, 27 Aug. 2012
Japanese
J-Global ID：201202271314197829 - RF‐MBE法によるGaAs(110)基板上への半極性InN成長に対する窒化の影響
五十嵐健; 折原操; 八木修平; 土方泰斗; 矢口裕之
応用物理学会学術講演会講演予稿集(CD-ROM), Volume：73rd, First page：ROMBUNNO.12A-PB4-12, 27 Aug. 2012
Japanese
J-Global ID：201202279081759741 - RF‐MBE法によるTiO2(001)基板上への立方晶GaNの成長
折原操; 八木修平; 土方泰斗; 矢口裕之
応用物理学会学術講演会講演予稿集(CD-ROM), Volume：73rd, First page：ROMBUNNO.13P-H9-17, 27 Aug. 2012
Japanese
J-Global ID：201202285680090400 - 熱酸化が4H‐SiCエピ膜中積層欠陥に及ぼす影響の顕微フォトルミネッセンスによる観察
山形光; 八木修平; 土方泰斗; 矢口裕之
応用物理学関係連合講演会講演予稿集(CD-ROM), Volume：59th, First page：ROMBUNNO.17P-A8-11, 29 Feb. 2012
Japanese
J-Global ID：201202246861327481 - 窒素δドープGaAsにおける単一等電子トラップからの励起子分子発光
高宮健吾; 福島俊之; 星野真也; 八木修平; 土方泰斗; 望月敏光; 吉田正裕; 秋山英文; 窪谷茂幸; 尾鍋研太郎; 片山竜二; 矢口裕之
応用物理学関係連合講演会講演予稿集(CD-ROM), Volume：59th, First page：ROMBUNNO.17A-A8-9, 29 Feb. 2012
Japanese
J-Global ID：201202254067781707 - 分光エリプソメトリによる立方晶InNの光学的特性評価
吉田倫大; 折原操; 八木修平; 土方泰斗; 矢口裕之
応用物理学関係連合講演会講演予稿集(CD-ROM), Volume：59th, First page：ROMBUNNO.16A-DP1-27, 29 Feb. 2012
Japanese
J-Global ID：201202270422534312 - GaAs中窒素δドープ超格子のエネルギー構造評価
野口駿介; 八木修平; 土方泰斗; 窪谷茂幸; 尾鍋研太郎; 矢口裕之
応用物理学関係連合講演会講演予稿集(CD-ROM), Volume：59th, First page：ROMBUNNO.17P-DP3-12, 29 Feb. 2012
Japanese
J-Global ID：201202272956548214 - 窒素δドープGaAs中の窒素原子対が形成する単一の等電子トラップからの発光に対する一軸応力の影響
新井佑也; 星野真也; 高宮健吾; 八木修平; 土方泰斗; 望月敏光; 吉田正裕; 秋山英文; 窪谷茂幸; 尾鍋研太郎; 矢口裕之
応用物理学関係連合講演会講演予稿集(CD-ROM), Volume：59th, First page：ROMBUNNO.17P-DP3-13, 29 Feb. 2012
Japanese
J-Global ID：201202279946154581 - 共鳴トンネル構造を用いたエネルギー選択層における熱励起電流のホットキャリア型太陽電池特性への影響
八木修平; 土方泰斗; 岡田至崇; 矢口裕之
応用物理学会学術講演会講演予稿集(CD-ROM), Volume：72nd, First page：ROMBUNNO.1A-H-12, 16 Aug. 2011
Japanese
J-Global ID：201102252261232919 - Growth rate enhancement of silicon-carbide oxidation in thin oxide regime
Hijikata Yasuto; Yaguchi Hiroyuki; Yoshida Sadafumi; Gerhardt R
Properties and Applications of Silicon Carbide, First page：77, Last page：87, 2011, [Reviewed]
DOI：https://doi.org/10.5772/14591
DOI ID：10.5772/14591, ORCID put code：30384781, Web of Science ID：WOS:000363729000005 - 極低窒素濃度GaAsNのフォトリフレクタンススペクトル
大久保航; 石川輝; 八木修平; 土方泰斗; 吉田貞史; 片山竜二; 尾鍋研太郎; 矢口裕之
応用物理学会学術講演会講演予稿集(CD-ROM), Volume：71st, First page：ROMBUNNO.14P-ZV-1, 30 Aug. 2010
Japanese
J-Global ID：201002208945322457 - 極低窒素濃度GaAsN中の等電子トラップからの発光に対する一軸応力の影響
新井佑也; 遠藤雄太; 八木修平; 土方泰斗; 窪谷茂幸; 尾鍋研太郎; 片山竜二; 矢口裕之
応用物理学会学術講演会講演予稿集(CD-ROM), Volume：71st, First page：ROMBUNNO.14P-ZV-2, 30 Aug. 2010
Japanese
J-Global ID：201002211648568235 - 酸化中のSiC層へのSiおよびC原子放出についての理論的検討
土方泰斗; 八木修平; 矢口裕之; 吉田貞史
応用物理学会学術講演会講演予稿集(CD-ROM), Volume：71st, First page：ROMBUNNO.15A-ZS-10, 30 Aug. 2010
Japanese
J-Global ID：201002219694574542 - Theoretical studies for Si and C emission into SiC layer during oxidation
土方 泰斗; 矢口 裕之; 吉田 貞史
埼玉大学工学部紀要 第一部 論文集, Volume：44, First page：34, Last page：37, 2010
To understand the structure of SiC-oxide interface more in detail, we propose a theory for calculating the depth profiles of Si and C emitted into SiC layer during oxidation. Simulations of the depth profiles of Si and C interstitials results in the structures analogous with those observed from a spectroscopic ellipsometry. To determine the diffusivities of Si and C interstitials, we performed capacitance-voltage measurements for examining the re-distribution profiles of nitrogen after oxidation. By comparing between observed and calculated profile, we obtained the self-diffusivity of C interstitials and confirmed that the proposed theory was appropriate to estimate depth profiles of Si and C interstitials emitted into SiC layer.
埼玉大学工学部広報委員会, Japanese
ISSN：1880-4446, CiNii Articles ID：120005386082 - Characterization of oxidizing interface and elucidation of oxidation mechanism of SiC semiconductor using spectroscopic ellipsometry
土方 泰斗; 矢口 裕之; 吉田 貞史
埼玉大学工学部紀要 第一部 論文集, Volume：43, First page：17, Last page：21, 2009
We tried to elucidate the oxidizing interface structure of SiC semiconductor and its oxidation mechanism. First of all, we investigated the analysis method for deriving the thickness of interface layer and verified the validity of the method by analyzing the multi-angle measurement data. As a result of analysis for SiC-oxide interfaces using the analysis method, it is found that the photon energy dispersion of optical constants of the interface layer is similar to that for SiC, the real part of dielectric function is larger than that of SiC, and the imaginary part agrees with that of SiC. In addition, we examined the thickness dependence of optical constants of interface layer and found that the standing point in energy dispersion of the imaginary part of dielectric function shifted to the lower energy-side at 40 nm of oxide thickness. In addition to the observation of SiC-oxide interface, real-time measurements of oxide growth-rates of SiC at various oxidation temperatures were conducted using an in-situ spectroscopic ellipsometer. We tried to apply 'Si and C emission model', which is proposed as the SiC oxidation model by us, to the experimental growth-rate data. As a result, the Si and C emission model well reproduced the growth-rate at the entire oxide thickness region at all of the oxidation temperatures measured for both of (0001)Si-face and (000-1)C-face. Based on the knowledge on oxidizing interface layer and oxidation mechanism obtained from spectroscopic ellipsometry studies, we discuss the structure of interface layer and the formation mechanism of interface states.
埼玉大学工学部, Japanese
CiNii Articles ID：120005386070 - RF-MBE法を用いた3C-SiC基板上への立方晶InNの結晶成長およびその物性評価
富田康浩; 井上赳; 折原操; 土方泰斗; 矢口裕之; 吉田貞史; 平林康男
Volume：55th, Number：1, 2008
J-Global ID：200902203029436754 - Single photon emission from locally doped semiconductors
矢口 裕之
旭硝子財団助成研究成果報告, First page：1, Last page：7, 2008
旭硝子財団, Japanese
ISSN：1882-0069, CiNii Articles ID：40019970578 - 閃亜鉛鉱構造窒化物半導体のエピタキシャル成長
矢口裕之
日本結晶成長学会誌, Volume：34, Number：4, First page：201, Last page：206, 2007 - RF-MBE growth of a-plane InN on r-plane sapphire substrates
吉田 貞史; 矢口 裕之; 折原 操
Report of Cooperative Research Center, Saitama University, Number：8, First page：48, Last page：51, 2007
The improvement of the surface morphology of a-plane InN films grown by RF molecular beam epitaxy is reported. Using low-temperature (LT) InN buffer layers, we could successfully obtain InN films with a smooth surface. The full width at half maximum of the x-ray diffraction (11-20) rocking curve along the [0001] InN direction was 2200 arcsec for a-plane InN samples grown at 450°C with a LT-InN buffer layer. Thus, we could improve also the crystalline quality of a-plane InN films by using LT-InN buffer layers. We observed strong polarization anisotropy in the photoluminescence spectra of a-plane InN, which is typical of nonpolar wurtzite III-nitride films.
埼玉大学総合研究機構地域共同研究センター産学連携推進部門, Japanese
ISSN：1347-4758, CiNii Articles ID：40016200658, CiNii Books ID：AA11808968 - Photoluminescence from Isoelectronic Traps in Dilute Nitride Semiconductor Alloys
矢口 裕之; 青木 貴嗣
埼玉大学紀要. 工学部 第1編 第1部 論文集, Volume：39, First page：131, Last page：132, Jul. 2006
We have studied the photoluminescence from isoelectonic traps in dilute GaAsN alloys. A number of sharp luminescence peaks due to nitrogen pairs and their phonon replicas were observed. The energy differences between the luminescence peaks and phonon replicas were 36 meV, which is in agreement with the energy of the longitudinal optical phonon at the Γ point . This indicates that the formation of isoelectronic traps is largely affected by the conduction band state at the Γ point in dilute GaAsN alloys. We have also investigated the temperature dependence of the photoluminescence related to isoelectronic traps. The energy shift of the luminescence peaks with increasing temperature is found to be almost the same as that of E0 gap of GaAs, also showing that the conduction band state at the Γ point significantly contributes to the formation of isoelectronic traps in dilute GaAsN alloys.
埼玉大学工学部, Japanese
ISSN：1880-4446, CiNii Articles ID：120001370441 - Towards Frontier Photonics Based on Advanced Materials
鎌田 憲彦; 明連 広昭; 矢口 裕之; 谷口 弘三
埼玉大学紀要. 工学部 第1編 第1部 論文集, Volume：39, First page：138, Last page：142, Jul. 2006
Based on science and technology of advanced materials, the quantum mechanical nature of photons can be utilized for expanding the available spectral window and strengthening the security of our social systems. Towards such frontier photonics, we started to study some basic elements from physical and technological aspects. We succeeded in growing β'-(BEDT-TTF)2ICl2 single crystals, detecting THz signal by our superconducting tunneling junction device. An in-situ ellipsometry enabled us to monitor thermal oxidation process of SiC surface, and a spectroscopic detection of non-radiative centers in a InAs/GaAs quantum dot structure became possible. The combination of quantum-mechanical design, nano-scale fabrication and detailed characterization is considered to be essential for proceeding the research frontier of brilliant photonics world.
埼玉大学工学部, Japanese
ISSN：1880-4446, CiNii Articles ID：120001370444 - RF-MBE Growth of InN/InGaN Quantum Well Structures
吉田 貞史; 矢口 裕之; 折原 操
埼玉大学地域共同研究センター紀要, Volume：7, First page：63, Last page：63, 2006
埼玉大学総合研究機構地域共同研究センター産学連携推進部門, Japanese
ISSN：1347-4758, CiNii Articles ID：120001371315 - RF-MBE growth of cubic InN films on MgO (001) substrates
吉田 貞史; 矢口 裕之; 折原 操
埼玉大学地域共同研究センター紀要, Volume：6, First page：71, Last page：71, 2005
埼玉大学総合研究機構地域共同研究センター産学連携推進部門, Japanese
ISSN：1347-4758, CiNii Articles ID：120001371341 - RF-MBE growth of InN epitaxial layers and InN/InGaN quantum wells on SiC substrates
吉田 貞史; 矢口 裕之; 土方 泰斗; 折原 操
埼玉大学地域共同研究センター紀要, Volume：5, First page：63, Last page：63, 2004
埼玉大学地域共同研究センター, Japanese
ISSN：1347-4758, CiNii Articles ID：120001371469 - Photoemission spectroscopy and in-situ spectroscopic ellipsometry studies on the Ar post-oxidation-annealing effects of oxide/SiC interfaces
Y. Hijikata; S. Kawato; S. Sekiguchi; H. Yaguchi; Y. Ishida; M. Yoshiawa; T. Kamiya; S. Yoshida
Proceedings of 1st Asia-Pacific Workshop on Widegap Semiconductors, First page：127, Last page：132, 2003 - Spectroscopic ellipsometry study on the dielectric functions of GaPN alloys
H Kanaya; H Yaguchi; Y Hijikata; S Yoshida; S Miyoshi; K Onabe
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, Volume：0, Number：7, First page：2753, Last page：2756, 2003
English
DOI：https://doi.org/10.1002/pssc.200303430
DOI ID：10.1002/pssc.200303430, ISSN：1862-6351, ORCID put code：56291710, Web of Science ID：WOS:000189401700183 - Epitaxial Growth of hexagonal and cubic InN using RF-MBE
吉田 貞史; 矢口 裕之; 土方 泰斗; 折原 操
Report of Cooperative Research Center, Saitama University, Number：4, First page：61, Last page：64, 2003
We have grown InN films on 3C-SiC (001) substrates with and without cubic GaN underlayers by RF-MBE. It was found that, in the case of direct growth on 3C-SiC (001), hexagonal InN grows with the crystal orientation as hexagonal InN [1-100]//3C-SiC [110], while, in the case of the growth on cubic GaN underlayers, cubic InN grows with the crystal orientation as cubic InN [110]//cubic GaN [110]. Photoluminescence emissions from the cubic and hexagonal InN films were clearly observed at around 0.7 eV.
埼玉大学地域共同研究センター, Japanese
DOI：https://doi.org/10.24561/00016696
DOI ID：10.24561/00016696, ISSN：1347-4758, CiNii Articles ID：120006388491, CiNii Books ID：AA11808968 - Development of Deep Ultraviolet Spectroscopic Characterization System for Nano Surface Structure of Wide Bandgap Semiconductors
矢口 裕之; 土方 泰斗
埼玉大学地域共同研究センター紀要, Volume：3, First page：40, Last page：40, 2002
埼玉大学地域共同研究センター, Japanese
ISSN：1347-4758, CiNii Articles ID：120001371525 - Characterization of Oxide Films on SiC by Spectroscopic Ellipsometry
吉田 貞史; 矢口 裕之; 土方 泰斗; 折原 操
Report of Cooperative Research Center, Saitama University, Number：3, First page：41, Last page：48, 2002
We have developed the method of obtaining the refractive indices of SiC/oxide interfaces by use of spectroscopic ellipsometry, and by using this method we have characterized SiC/oxide interfaces obtained by various oxidation methods and/or post oxidation annealing (POA). We have designed and fabricated the system with which in situ spectroscopic ellipsometry measurements can be carried out. We have observed the initial oxidation stage of SiC. We have also observed the changes of the refractive indices of interfaces by annealing in Ar atmosphere (Ar POA). The changes of atomic bond states at the interface by Ar POA were also observed by angle-resolved XPS and UPS, and compared with the results obtained form optical measurements and C-V measurements. We have developed the measurement method of obtaining carrier density and mobility distribution in SiC wafers by use of microscopic FT-IR. We have shown that the values obtained by this method well agree with those obtained from Hall measurements, suggesting that the method is useful to characterize electrical properties of SiC wafers quantitatively, non-destructively and without contact.
埼玉大学地域共同研究センター, Japanese
DOI：https://doi.org/10.24561/00016656
DOI ID：10.24561/00016656, ISSN：1347-4758, CiNii Articles ID：120006388453, CiNii Books ID：AA11808968 - Characterization of Oxide Films on SiC by Spectroscopic Ellipsometry
吉田 貞史; 矢口 裕之; 土方 泰斗; 折原 操
Report of Cooperative Research Center, Saitama University, Number：2, First page：150, Last page：156, 2001
The characterization of oxidized films on SiC and oxide/SiC interfaces has been carried out by use of spectroscopic ellipsometry and XPS in order to make clear their dependences on the oxidation process. It was found that the refractive indices of the interfaces depend both on the oxide formation method and the method of post oxidation annealing. We found that the refractive indices for the oxide films deposited by low temperature CVD have lower interface refractive indices than those for dry oxidation and pyrogenic oxidation, and those for post oxidation annealed in· Ar atmosphere are lower that those for quenched samples. These results correspond well with the tendencies of interface state densities obtained by electrical measurements for the samples with the corresponding oxidation processes, except the cases of the oxidation processes containing hydrogen orland hydro-oxide base, like pyrogenic oxidation and wet re-oxidation. The XPS measurements have also shown the changes in the composition and bonding nature at the interfaces by the oxidation processes. We have shown the capability of microscopic FT -IR measurements for obtaining carrier density and mobility mapping of bulk SiC wafers.
埼玉大学地域共同研究センター, Japanese
ISSN：1347-4758, CiNii Articles ID：40006206458, CiNii Books ID：AA11808968 - 分光偏光解析等によるSiC酸化膜の評価
吉田 貞史; 矢口 裕之; 土方 泰斗
Number：1, First page：25, Last page：32, 2000
Japanese
ISSN：1347-4758, CiNii Articles ID：40006206430, CiNii Books ID：AA11808968 - Development of A New Crystal Growth Method of Silicon Carbide High-Temperature Semiconductor - Characterization of Crystal Structures andProperties
吉田 貞史; 矢口 裕之; 土方 泰斗; 折原 操
埼玉大学地域共同研究センター紀要, Volume：1, First page：74, Last page：74, 2000
埼玉大学地域共同研究センター, Japanese
ISSN：1347-4758, CiNii Articles ID：120001389831 - Arsenic Surfactant and Incorporation Effects on Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy
Tokuharu KIMURA; Seikoh YOSHIDA; Jun WU; Hiroyuki YAGUCHI; Kentaro ONABE; Yasuhiro SHIRAKI
Extended Abstracts of the 1999 International Conference on Solid State Devices and Materials, 1999, [Reviewed]
The Japan Society of Applied Physics, English
DOI：https://doi.org/10.7567/ssdm.1999.c-1-5
DOI ID：10.7567/ssdm.1999.c-1-5, ORCID put code：56291742 - MOVPE Growth and Characterization of Cubic Nitrides
YAGUCHI Hiroyuki; WU Jun; ONABE Kentaro
Technical report of IEICE. LQE, Volume：98, Number：109, First page：73, Last page：78, 16 Jun. 1998
We have studied the growth characteristics in metalorganic vapor phase epitaxy of GaN to improve the crystal quality of cubic GaN. Photoluminescence properties of cubic nitrides of good quality have been examined in detail. In addition, we have observed stimulated emission from an optically pumped cubic GaN/AlGaN double heterostructure.
The Institute of Electronics, Information and Communication Engineers, Japanese
CiNii Articles ID：110003307581, CiNii Books ID：AN10442705 - Metalorganic vapor phase epitaxy of high quality cubic GaN, AlGaN and their application to optical devices
J Wu; H Yaguchi; K Onabe; Y Shiraki
BLUE LASER AND LIGHT EMITTING DIODES II, First page：715, Last page：718, 1998, [Reviewed]
English
ORCID put code：56291604, Web of Science ID：WOS:000079631200176 - MOVPE growth of GaPAsN quaternary alloys lattice-matched to GaP
G Biwa; H Yaguchi; K Onabe; Y Shiraki
NITRIDE SEMICONDUCTORS, Volume：482, First page：173, Last page：178, 1998, [Reviewed]
English
ISSN：0272-9172, Web of Science ID：WOS:000073983100026 - Metalorganic Vapor Phase Epitaxy of High Quality Cubic GaN,AlGaN and Their Application to Optical Devices
J. Wu; H. Yaguchi; K. Onabe; Y. Shiraki
Proceeding of the 2nd International Symposium on Blue Laser and Light Emitting Diodes, First page：715, Last page：718, 1998 - カソードルミネッセンスによる半導体低次元構造の評価
矢口裕之; 辻川智子; 尾鍋研太郎
電子顕微鏡, Volume：33, First page：217, Last page：220, 1998 - High Quality Cubic GaN Growth on GaAs (100) Substrates by Metalorganic Vapor Phase Epitaxy
WU Jun; YAGUCHI Hiroyuki; ONABE Kentaro; SHIRAKI Yasuhiro; ITO Ryoichi
Volume：1997, First page：194, Last page：195, 16 Sep. 1997
English
CiNii Articles ID：10017194491, CiNii Books ID：AA10777858 - Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire Lasers
ISHIKAWA Mitsuteru; PAN Wugen; KANEKO Yasuhisa; YAGUCHI Hiroyuki; ONABE Kentaro; ITO Ryoichi; SHIRAKI Yasuhiro
Volume：1997, First page：342, Last page：343, 16 Sep. 1997
English
CiNii Articles ID：10017194971, CiNii Books ID：AA10777858 - GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by MOVPE
TSUJIKAWA Tomoko; MOMMA Keishi; YAGUCHI Hiroyuki; ONABE Kentaro; SHIRAKI Yasuhiro; ITO Ryoichi
Volume：1997, First page：318, Last page：319, 16 Sep. 1997
English
CiNii Articles ID：10017194909, CiNii Books ID：AA10777858 - MOVPE Growth and Optical Characterization of GaPN Alloys
YAGUCHI Hiroyuki
Technical report of IEICE. LQE, Volume：97, Number：100, First page：25, Last page：30, 17 Jun. 1997
We have studied the growth characteristics in metalorganic vapor phase epitaxy of GaP_<1-x>N_x alloys and found that the nitrogen content in GaP_<1-x>N_x is considerably affected by the nitrogen desorption from the surface during the growth. In addition, we have clarified the radiative transition and carrier relaxation processes and the conduction band edge formation in GaP_<1-x>N_x alloys using various optical measurements.
The Institute of Electronics, Information and Communication Engineers, Japanese
CiNii Articles ID：110003307129, CiNii Books ID：AN10442705 - Polarization properties of GaAsP/AlGaAs tensilely strained quantum wire structures grown on V-grooved GaAs substrates
W Pan; H Yaguchi; K Onabe; R Ito; N Usami; Y Shiraki
COMPOUND SEMICONDUCTORS 1995, Volume：145, First page：925, Last page：930, 1996, [Reviewed]
English
ISSN：0951-3248, ORCID put code：56291587, Web of Science ID：WOS:A1996BF51P00168 - Time-resolved photoluminescence study of radiative transition processes in GaP1-xNx alloys
H Yaguchi; S Miyoshi; H Arimoto; S Saito; H Akiyama; K Onabe; Y Shiraki; R Ito
COMPOUND SEMICONDUCTORS 1995, Volume：145, First page：307, Last page：312, 1996, [Reviewed]
English
ISSN：0951-3248, ORCID put code：56291776, Web of Science ID：WOS:A1996BF51P00055 - Strain effect on direct- and indirect-gap band lineups of GaAs1-xPx/GaP quantum wells
A Shima; H Yaguchi; K Onabe; Y Shiraki; R Ito
COMPOUND SEMICONDUCTORS 1995, Volume：145, First page：403, Last page：408, 1996, [Reviewed]
English
ISSN：0951-3248, ORCID put code：56291588, Web of Science ID：WOS:A1996BF51P00072 - Reflectance spectroscopy of ZnCdSe/ZnSe single quantum wells
B. P. Zhang; T. Yasui; T. Yasuda; Y. Segawa; H. Yaguchi; Y. Shiraki
Volume：11, First page：23, Last page：24, 1995 - MOVPE GROWTH OF STRAINED GAP1-XNX AND GAP1-XNX/GAP QUANTUM-WELLS
S MIYOSHI; H YAGUCHI; K ONABE; Y SHIRAKI; R ITO
GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, Volume：136, Number：136, First page：637, Last page：642, 1994, [Reviewed]
English
ISSN：0951-3248, ORCID put code：56291580, Web of Science ID：WOS:A1994BB30L00105 - DETERMINATION OF BAND OFFSETS IN GAASP/GAP STRAINED-LAYER QUANTUM-WELL STRUCTURES USING PHOTOREFLECTANCE AND PHOTOLUMINESCENCE SPECTROSCOPY
Y HARA; H YAGUCHI; K ONABE; Y SHIRAKI; R ITO
GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, Volume：136, Number：136, First page：361, Last page：366, 1994, [Reviewed]
English
ISSN：0951-3248, ORCID put code：56291623, Web of Science ID：WOS:A1994BB30L00060 - Initial Oxidation of MBE-Grown Si Surfaces
T. Igarashi; H. Yaguchi; K. Fujita; S. Fukatsu; Y. Shiraki; R. Ito; T. Hattori
MRS Proceedings, Volume：220, First page：35, Last page：39, 1991, [Reviewed]
English
DOI：https://doi.org/10.1557/proc-220-35
DOI ID：10.1557/proc-220-35, ISSN：0272-9172, eISSN：1946-4274, ORCID put code：56291586, Web of Science ID：WOS:A1991BU84B00005 - Suppression of Interfacial Mixing by Sb Deposition in Si/Ge Strained-Layer Superlattices
K. Fujita; S. Fukatsu; H. Yaguchi; T. Igarashi; Y. Shiraki; R. Ito
MRS Proceedings, Volume：220, First page：193, Last page：197, 1991, [Reviewed]
English
DOI：https://doi.org/10.1557/proc-220-193
DOI ID：10.1557/proc-220-193, ISSN：0272-9172, eISSN：1946-4274, ORCID put code：56291656, Web of Science ID：WOS:A1991BU84B00029 - KINETICS OF GE SEGREGATION IN THE PRESENCE OF SB DURING MOLECULAR-BEAM EPITAXY
S FUKATSU; K FUJITA; H YAGUCHI; Y SHIRAKI; R ITO
SILICON MOLECULAR BEAM EPITAXY, Volume：220, First page：217, Last page：222, 1991, [Reviewed]
English
DOI：https://doi.org/10.1557/PROC-220-217
DOI ID：10.1557/PROC-220-217, ORCID put code：56291583, Web of Science ID：WOS:A1991BU84B00033 - Initial oxidation of MBE-grown Si surfaces
T. Igarashi; H. Yaguchi; K. Fujita; S. Fukatsu; Y. Shiraki; R. Ito; T. Hattori
Silicon Molecular Beam Epitaxy Symposium, Volume：651, First page：35, Last page：39, 1991
We investigated the initial oxidation of MBE-grown Si (100) surfaces with atomic flatness using x-ray photoemission spectroscopy (XPS) and reflection high energy electron diffraction (RHEED). It was found that the MBE-grown surfaces are inert and hardly oxidized even after exposure to molecular oxygen up to 1500 Langmuir (L) at room temperature. At elevated temperatures, the surface oxidation was substantially promoted. On the contrary, the surface oxidation was found to be substantiated on a deliberately corrugated Si surface prepared by low temperature MBE growth, even at room temperature.
Springer Science and Business Media LLC
DOI：https://doi.org/10.1557/proc-220-35
DOI ID：10.1557/proc-220-35, ISSN：0272-9172, eISSN：1946-4274 - Suppression of interfacial mixing by Sb deposition in Si/Ge strained-layer superlattices
K. Fujita; S. Fukatsu; H. Yaguchi; T. Igarashi; Y. Shiraki; R. Ito
Silicon Molecular Beam Epitaxy Symposium, Volume：651, First page：193, Last page：197, 1991
We have studied interfacial mixing of Si/Ge strained-layer superlattices during Si molecular beam epitaxy. The mixing has been shown to be primarily due to the surface segregation of Ge atoms during Si overlayer growth. It has been found that only the Ge atoms on the topmost Ge layer dominantly segregate to the growing surface. It has also been found that the surface segregation of Ge is effectively suppressed by depositing Sb atoms on the Ge layers. It has been demonstrated that Si/Ge superlattices with abrupt Si/Ge interfaces can be grown by depositing Sb. The two state exchange model is used to discuss the surface segregation of Ge and the suppression of the segregation by Sb deposition.
Springer Science and Business Media LLC
DOI：https://doi.org/10.1557/proc-220-193
DOI ID：10.1557/proc-220-193, ISSN：0272-9172, eISSN：1946-4274 - Kinetics of Ge segregation in the presence of Sb during molecular beam epitaxy
S. Fukatsu; K. Fujita; H. Yaguchi; Y. Shiraki; R. Ito
Silicon Molecular Beam Epitaxy Symposium, Volume：651, First page：217, Last page：222, 1991 - 28p-K-10 Glide Velocity of Dislocations in Heteroepitaxial Thin Films
Yamashita Y.; Maeda K.; Mera Y.; Yaguchi H.; Shiraki Y.
Meeting Abstracts of the Physical Society of Japan, Volume：46, Number：0, First page：41, Last page：41, 1991
The Physical Society of Japan, Japanese
DOI ID：10.11316/jpsgaiyod.46.2.0_41_2, CiNii Articles ID：110002149886, CiNii Books ID：AN10453938
- 薄膜作製応用ハンドブック
権田, 俊一; 酒井, 忠司; 田畑, 仁; 八瀬, 清志; 宮崎, 照宣, [Contributor]
Feb. 2020
Japanese, Total pages：38, 6, 16, 1468, 21, 15p
CiNii Books：http://ci.nii.ac.jp/ncid/BB29670662
ISBN：9784860436315, CiNii Books ID：BB29670662 - 初歩から学ぶ固体物理学
矢口, 裕之, [Single work]
Feb. 2017
Japanese, Total pages：vi, 312p
CiNii Books：http://ci.nii.ac.jp/ncid/BB23156746
ISBN：9784061532946, CiNii Books ID：BB23156746 - Advanced Silicon Carbide Devices and Processing
[Contributor]
Sep. 2015
Total pages：258
ISBN：9535121685, ASIN：9535121685, EAN：9789535121688 - 理工学のための線形代数
長沢, 壮之; 江頭, 信二; 榎本, 裕子; 古城, 知己; 鈴木, 輝一(地盤工学); 矢口, 裕之; 柳瀬, 郁夫, [Joint work]
Apr. 2013
Japanese, Total pages：iv, 193p
CiNii Books：http://ci.nii.ac.jp/ncid/BB12572749
ISBN：9784563004712, CiNii Books ID：BB12572749 - 薄膜の評価技術ハンドブック
吉田, 貞史; 金原, 粲, [Contributor]
Jan. 2013
Japanese, Total pages：14, 624p
CiNii Books：http://ci.nii.ac.jp/ncid/BB11488829
ISBN：9784924728677, CiNii Books ID：BB11488829 - 吉田貞史, 菊池昭彦, 松田七美男, 矢口裕之, 明連広昭, 石谷善博, 金原粲 電気数学
吉田貞史; 菊池昭彦; 松田七美男; 矢口裕之; 明連広昭; 石谷善博; 金原粲, [Joint work]
実教出版, Sep. 2008
ISBN：9784407313178 - 薄膜ハンドブック
日本学術振興会薄膜第131委員会; 尾浦, 憲治郎; 吉田, 貞史, [Contributor]
Mar. 2008
Japanese, Total pages：xvii, 1235p
CiNii Books：http://ci.nii.ac.jp/ncid/BA85340554
ISBN：9784274205194, CiNii Books ID：BA85340554 - 等電子トラップを利用した単一光子発生素子の作製
矢口, 裕之
[矢口裕之], 2007
Total pages：50p
CiNii Books：http://ci.nii.ac.jp/ncid/BA82567702
CiNii Books ID：BA82567702 - 金原粲、吉田貞史、江馬一弘、馬場茂、矢口裕之、和田直久 基礎物理２
金原粲; 吉田貞史; 江馬一弘; 馬場茂; 矢口裕之; 和田直久, [Joint work]
実教出版, Oct. 2006
ISBN：9784407308556 - Handbook of Semiconductor Nanostructures and Nanodevices(Optical Gain of Variously Strained Semiconductor Quantum Wells)
Y. Seko; H. Yaguchi, [Contributor]
American Scientific Publishers, Los Angeles, 2005
ISBN：9781588830739 - III-Nitride Semiconductors: Optical Properties II (Chapter 9 Cubic Phase GaN and AlGaN: Epitaxial Growth and Optical Properties)
J. Wu; H. Yaguchi; K. Onabe, [Contributor]
Taylor & Francis Books, Inc., 2002
ISBN：9781560329732
- First-principles study of the band tail states and optical properties of gallium phosphide nitride alloys
Hiroyuki Yaguchi
35th International Conference on the Physics of Semiconductors 2022, Jun. 2022
English, Oral presentation
共同研究・競争的資金等ID：24508454 - Arsenic Composition Dependence Of Up-conversion Luminescence Of Gallium Phosphide Arsenide Nitride Alloys
Kengo Takamiya; Sultan Md. Zamil; Shuhei Yagi; Hiroyuki Yaguchi
35th International Conference on the Physics of Semiconductors 2022, Jun. 2022
English, Poster presentation
共同研究・競争的資金等ID：24508454 - Fabrication of 280 nm LD structures using polarizaitn doped p-type layers and observation of high current injection emission
Fumiya Chugenji; Noritoshi Maeda; Yuri Itokazu; M. Ajmal Khan; Yasushi Iwaisako; Hiroyuki Yaguchi; Hideki Hirayama
The 69th JSAP Spring Meeting 2022, Mar. 2022
Japanese, Oral presentation - Wavelength dependence of net modal gain of AlGaN-based DUV laser diode
Yuri Itokazu; Noritoshi Maeda; Hiroyuki Yaguchi; Hideki Hirayama
The 69th JSAP Spring Meeting 2022, Mar. 2022
Japanese, Oral presentation - Excitation Power Dependence of Emission Lines from Er Doped GaAs
Shunpei Ito; Kengo Takamiya; Masataka Kobayashi; Shuhei Yagi; Hidefumi Akiyama; Hiroyuki Yaguchi
The 69th JSAP Spring Meeting 2022, Mar. 2022
Japanese, Poster presentation - Optical Characterization of Carrier Recombination Process in GaPN Alloys: Excitation Source and Nitrogen Concentration Dependence
Hiroki Iwai; Sanjida Ferdous; Norihiko Kamata; Shuhei Yagi; Hiroyuki Yaguchi
2021 MRS Fall Meeting, Dec. 2021
English, Oral presentation
共同研究・競争的資金等ID：24508454 - Degradation of Photoluminescence Intensity of GaAs under High Power Density Excitation
Shohei Takaoka; Md. Zamil Sultan; Kengo Takamiya; Shuhei Yagi; Hiroyuki Yaguchi
The 82nd JSAP Autumn Meeting 2021, Sep. 2021
Japanese, Poster presentation - Detection of Non-Radiative Recombination Levels in InGaN-LED Under Operation By Irradiating Below-Gap Excitation Light
Natsuki Chiyoda; Norihiko Kamata; Hiroyuki Yaguchi
The 68th JSAP Spring Meeting 2021, Mar. 2021
Japanese, Oral presentation - Optical Characterization of Carrier Recombination Process in Intermediate Type GaPN Alloy: Comparison of Nitrogen Content Between 1.4% and 3.2%
Hiroki Iwai; Sanjida Ferdous; Norihiko Kamata; Shuhei Yagi; Hiroyuki Yaguchi
The 68th JSAP Spring Meeting 2021, Mar. 2021
Japanese, Oral presentation
共同研究・競争的資金等ID：24508454 - First-Principles Study of Optical Absorption Due to Band Tail States in GaPN Alloys
Hiroyuki Yaguchi
The 68th JSAP Spring Meeting 2021, Mar. 2021
Japanese, Poster presentation
共同研究・競争的資金等ID：24508454 - GaPN混晶のアップコンバージョン発光へのバンドギャップエネルギーを超える励起光の影響
相良鋼; 高宮健吾; 八木修平; 矢口裕之
Sep. 2020
Japanese, Oral presentation
共同研究・競争的資金等ID：24508454 - 第一原理計算によるGaPN混晶におけるバンドテイル状態の検討
矢口裕之
Mar. 2020
Japanese, Poster presentation
共同研究・競争的資金等ID：24508454 - Photoluminescence Intensity Change of InGaAsN Quantum Well by Laser Irradiation
Md Zamil Sultan; S. Yagi; K. Takamiya; H. Yaguchi
Mar. 2020
English, Oral presentation
共同研究・競争的資金等ID：24508454 - Crystal Growth Control and Real-Time Analysis of Organolead-Halide Perovskite
Tetsuhiko Miyadera; Yuto Auchi; Kohei Yamamoto; Noboru Ohashi; Tomoyuki Koganezawa; Hiroyuki Yaguchi; Yuji Yoshida; Masayuki Chikamatsu
Asia-Pacific International Conference on Perpvskite, Organic Photovoltaices and Optoellectronics, Jan. 2020
English - Crystal Growth Dynamics of CH3NH3PbI3 in Vacuum Deposition Process
T. Miyadera; Y. Auchi; K. Yamanoto; N. Ohashi; T. Koganezawa; H. Yaguchi; Y. Yoshida; M. Chikamatsu
Materials Research Meeting 2019, Dec. 2019
English - DCスパッタAlNテンプレートを用いたUVC-LEDの進展
最上耀介; 大澤篤史; 尾崎一人; 谷岡千丈; 前岡淳史; 糸数雄吏; 桑葉俊輔; 定 昌史; 前田哲利; 矢口裕之; 平山秀樹
Nov. 2019
Japanese, Oral presentation - Fabrication of UVC AlGaN LEDs on DC-sputtered AlN templates with hightemperature annealing
Y. Mogami; A. Osawa; K. Osaki; Y. Tanioka; A. Maeoka; Y. Itokazu; S. Kuwaba; M. Jo; N. Maeda; H. Yaguchi; H. Hirayama
The 9th Asia-Pacific Workshop on Widegap Semiconductors, Nov. 2019
English - 真空プロセスによる鉛ハライドペロブスカイトの配向制御
宮寺哲彦; 阿内悠人; 山本晃平; 大橋昇; 小金澤智之; 矢口裕之; 吉田郵司; 近松真之
Sep. 2019
Japanese, Oral presentation - Growth of InN nanocolumns using a cubic GaN interlayer by RF-MBE
R. Onuma; S. Yagi; H. Yaguchi
7th International Workshop on Eptaxial Growth and Fundamental Properties of Semiconductor Nanostructures, Sep. 2019
English, Poster presentation - Fabrication of Cubic InN Nanowires on GaN V-Groove Structures
Y. Nishimura; S. Yagi; H. Yaguchi
7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, Sep. 2019
English, Poster presentation - Upconversion Luminescence from GaPN Alloys with Various N Compositions
K. Takamiya; W. Takahashi; S. Yagi; N. Kamata; Y. Hazama; H. Akiyama; H. Yaguchi
7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, Sep. 2019
English, Poster presentation
共同研究・競争的資金等ID：24508454 - Photoluminescence Intensity Change of GaPN by Laser Irradiation
Sultan Md. Zamil; A. Shiroma; S. Yagi; K. Takamiya; H. Yaguchi
7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, Sep. 2019
English, Poster presentation
共同研究・競争的資金等ID：24508454 - 窒素δ-ドープGaAs超格子の二波長励起フォトルミネッセンス法によるキャリア再結合準位評価
永田 航太; 鎌田 憲彦; 八木 修平; 矢口 裕之
Sep. 2019
Japanese, Poster presentation - DCスパッタAlNを用いたAlGaN層格子緩和の促進
最上 耀介; 大澤 篤史; 尾崎 一人; 谷岡 千丈; 前岡 淳史; 糸数 雄吏; 桑葉 俊輔; 定 昌史; 前田 哲利; 矢口 裕之; 平山 秀樹
Sep. 2019
Japanese, Oral presentation - DCスパッタAlNテンプレート上UVC AlGaN LEDの作製と評価
最上 耀介; 大澤 篤史; 尾崎 一人; 谷岡 千丈; 前岡 淳史; 糸数 雄吏; 桑葉 俊輔; 定 昌史; 前田 哲利; 矢口 裕之; 平山 秀樹
Sep. 2019
Japanese, Oral presentation - GaN V溝構造を下地層とした立方晶InNナノワイヤの作製
西村 裕介; 八木 修平; 矢口 裕之
Sep. 2019
Japanese, Poster presentation - RF-MBE法による立方晶GaN中間層を用いたInNナノコラムの成長
大沼 力也; 八木 修平; 矢口 裕之
Sep. 2019
Japanese, Oral presentation - (111)基板上に作製した窒素δドープGaAs中の単一等電子トラップによる励起子分子発光
高岡 祥平; 高宮 健吾; 八木 修平; 挟間 優治; 秋山 英文; 矢口 裕之
Sep. 2019
Japanese, Oral presentation - InGaAs:N δドープ超格子の電気特性評価
米野 龍司; 宮下 直也; 岡田 至崇; 八木 修平; 矢口 裕之
Sep. 2019
English, Oral presentation - Laser Induced Degradation of Photoluminescence Intensity in GaPN
Md Zamil Sultan; A. Shiroma; S. Yagi; K. Takamiya; H. Yaguchi
Sep. 2019
English, Oral presentation
共同研究・競争的資金等ID：24508454 - Two-Wavelength Excited Photoluminescence Study of Upconversion Photoluminescence from GaPN Alloys
H. Yaguchi; W. Takahashi; K. Takamiya; S. Yagi; N. Kamata; Y. Hazama; H. Akiyama
13th International Conference on Nitride Semiconductors, Jul. 2019
English, Poster presentation
共同研究・競争的資金等ID：24508454 - 有機鉛ペロブスカイト製膜過程リアルタイム観察
阿内悠人; 阿内悠人; 宮寺哲彦; 山本晃平; 小金澤智之; 近松真之; 吉田郵司; 矢口裕之
Mar. 2019
2019 - 2019, Japanese, Oral presentation - 規則配列化InNドットの作製に向けた立方晶GaN表面ステップ構造の成長条件依存性
大倉一将; 高宮健吾; 八木修平; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Sep. 2018
Sep. 2018 - Sep. 2018, Japanese - 二波長励起PL測定によるGaPN混晶のアップコンバージョン発光特性評価
高橋渉; 高宮健吾; 八木修平; 狭間優治; 秋山英文; 矢口裕之; 鎌田憲彦
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Sep. 2018
Sep. 2018 - Sep. 2018, Japanese, Oral presentation - 第一原理計算によるGaAsN混晶中のN原子配置のバンド構造への影響の検討
塚原悠太; 八木修平; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Sep. 2018
Sep. 2018 - Sep. 2018, Japanese, Oral presentation - RF‐MBE成長による4H‐SiC(000-1)基板上へのN極性GaNの作製
杉浦亮; 高宮健吾; 八木修平; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Sep. 2018
Sep. 2018 - Sep. 2018, Japanese - MBE成長したErドープGaAsの発光特性に対するアニーリングの影響
五十嵐大輔; 高宮健吾; 伊藤隆; 八木修平; 秋山英文; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Mar. 2018
Mar. 2018 - Mar. 2018, Japanese - 真空プロセスによる有機鉛ペロブスカイトの結晶成長制御
宮寺哲彦; 阿内悠人; 小金澤智之; 矢口裕之; 吉田郵司; 近松真之
Sep. 2018
2018 - 2018 - First-principles study of optical transitions in dilute nitride semiconductor nanostructures
H. Yaguchi; S. Yagi; K. Takamiya
6th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, Sep. 2017
English, Invited oral presentation - 希釈窒化物半導体中の窒素原子配置によるバンドギャップへの影響
宮島数喜; 八木修平; 庄司靖; 岡田至崇; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Sep. 2017
Aug. 2017 - Aug. 2017, Japanese - 新規可溶性オリゴチオフェン系電子ドナー材料を用いた有機薄膜太陽電池への溶媒蒸気アニーリング効果
秋山雄希; 秋山雄希; 橘浩昭; 阿澄玲子; 宮寺哲彦; 近松真之; 八木修平; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Aug. 2017
Aug. 2017 - Aug. 2017, Japanese - GaPN混晶のアップコンバージョン発光
高橋渉; 高宮健吾; 八木修平; 伊藤隆; 秋山英文; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Aug. 2017
Aug. 2017 - Aug. 2017, Japanese - DRCN5T/PCBMバルクヘテロ接合膜の溶媒蒸気アニーリング過程のその場観察
新井康司; 新井康司; 宮寺哲彦; 小金澤智之; 秋山雄希; 秋山雄希; 橘浩昭; 吉田郵司; 近松真之; 八木修平; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Mar. 2017
Mar. 2017 - Mar. 2017, Japanese - n型GaAs:Nδドープ超格子の電気的特性評価
加藤諒; 八木修平; 岡田至崇; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Mar. 2017
Mar. 2017 - Mar. 2017, Japanese - 1eV帯InGaAs:Nδドープ超格子の作製
梅田峻平; 八木修平; 宮下直也; 岡田至崇; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Mar. 2017
Mar. 2017 - Mar. 2017, Japanese - ErドープGaAsからの発光のMBE成長温度依存性
五十嵐大輔; 高宮健吾; 八木修平; 伊藤隆; 秋山英文; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Mar. 2017
Mar. 2017 - Mar. 2017, Japanese - ルブレン単結晶上の有機鉛ペロブスカイトのエピタキシャル成長
阿内悠人; 阿内悠人; 宮寺哲彦; 小金澤智之; 近松真之; 吉田郵司; 矢口裕之
2017
2017 - 2017 - 新規可溶性オリゴチオフェン系電子ドナー材料を用いた有機薄膜太陽電池
秋山雄希; 秋山雄希; 橘浩昭; 阿澄玲子; 宮寺哲彦; 近松真之; 小金澤智之; 矢口裕之; 八木修平
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Sep. 2016
Sep. 2016 - Sep. 2016, Japanese - レーザ照射によるGaInNAs混晶半導体の発光効率への影響
米倉成一; 高宮健吾; 八木修平; 上田修; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Sep. 2016
Sep. 2016 - Sep. 2016, Japanese - 4H‐SiC微傾斜基板上に作製した自己組織化InN/GaNドットの配列性制御
松岡圭佑; 八木修平; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Sep. 2016
Sep. 2016 - Sep. 2016, Japanese - 4H‐SiC基板の二波長励起PL測定―BGE強度依存性―
近藤圭太郎; 福田武司; 本多善太郎; 鎌田憲彦; 八木修平; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Mar. 2016
Mar. 2016 - Mar. 2016, Japanese - MgO微傾斜基板上に作製した立方晶InNドット配列構造の堆積量依存性
石井健一; 八木修平; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Mar. 2016
Mar. 2016 - Mar. 2016, Japanese - 添加剤導入によるP3HT薄膜の結晶成長過程のその場観察評価
新井康司; 新井康司; 宮寺哲彦; 小金澤智之; 秋山雄希; 秋山雄希; 杉田武; 近松真之; 八木修平; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Mar. 2016
Mar. 2016 - Mar. 2016, Japanese - 円偏光PLEによるGe直接遷移端への光スピン注入
安武裕輔; 安武裕輔; 太野垣健; 太野垣健; 大川洋平; 矢口裕之; 金光義彦; 深津晋
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Aug. 2015
Aug. 2015 - Aug. 2015, Japanese - ErドープGaAsからの発光に対する低温成長の影響
飯村啓泰; JIN R.G; 高宮健吾; 八木修平; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Aug. 2015
Aug. 2015 - Aug. 2015, Japanese - GaAs MBE成長におけるEr原子の表面偏析の温度依存性
JIN R; 高宮健吾; 八木修平; 土方泰斗; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Aug. 2015
Aug. 2015 - Aug. 2015, Japanese - 第一原理計算によるInAsN混晶の伝導帯の解析
宮崎貴史; 八木修平; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Aug. 2015
Aug. 2015 - Aug. 2015, Japanese - 微傾斜基板を用いたシングルドメイン立方晶GaNの成長と立方晶InNドット配列の形成
石井健一; 折原操; 八木修平; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Aug. 2015
Aug. 2015 - Aug. 2015, Japanese - 第一原理計算によるGaAs:Nδドープ超格子における光学遷移に関する研究
吉川洋生; 八木修平; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Aug. 2015
Aug. 2015 - Aug. 2015, Japanese - フォトルミネッセンス法による4H‐SiCエピ層中の酸化誘因欠陥の観察
浅藤亮祐; 八木修平; 土方泰斗; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Aug. 2015
Aug. 2015 - Aug. 2015, Japanese - AlAs/GaAs分布ブラッグ反射鏡を有するEr δドープGaAsの発光特性
須藤真樹; JIN R.G; 高宮健吾; 八木修平; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Aug. 2015
Aug. 2015 - Aug. 2015, Japanese - 第一原理計算によるInAsN混晶のバンド構造に関する研究
宮崎貴史; 八木修平; 土方泰斗; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Feb. 2015
Feb. 2015 - Feb. 2015, Japanese - 4H‐SiC(0001)微傾斜基板を用いたInNドット配列の自己形成
森誠也; 高宮健吾; 折原操; 八木修平; 土方泰斗; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Feb. 2015
Feb. 2015 - Feb. 2015, Japanese - GaAs:Nδドープ超格子を有する太陽電池の二段階光吸収
鈴木智也; 八木修平; 土方泰斗; 岡田至崇; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Feb. 2015
Feb. 2015 - Feb. 2015, Japanese - 添加剤導入によるP3HT:PCBM混合膜の結晶成長過程のその場観察評価
新井康司; 新井康司; 柴田陽生; 伊藤英輔; 小金澤智之; 宮寺哲彦; 宮寺哲彦; 近松真之; 矢口裕之
2015
2015 - 2015 - Geの磁場中時間分解円偏光フォトルミネッセンス
安武裕輔; 矢口裕之; 深津晋
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Sep. 2014
Sep. 2014 - Sep. 2014, Japanese - GaAs:Nδドープ超格子による中間バンド構造のエネルギー制御
長田一輝; 鈴木智也; 八木修平; 内藤駿弥; 庄司靖; 岡田至崇; 土方泰斗; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Sep. 2014
Sep. 2014 - Sep. 2014, Japanese - SiC酸化へのArアニール導入による酸化膜成長速度の変化
今野良太郎; 八木修平; 土方泰斗; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Sep. 2014
Sep. 2014 - Sep. 2014, Japanese - 中間バンド型太陽電池に向けたGaAs:Nδドープ超格子のMBE成長
鈴木智也; 長田一輝; 八木修平; 内藤駿弥; 土方泰斗; 岡田至崇; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Sep. 2014
Sep. 2014 - Sep. 2014, Japanese - RF‐MBE法によるGaAs(110)基板上へのGaNの成長
五十嵐健; 折原操; 八木修平; 土方泰斗; 窪谷茂幸; 片山竜二; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Mar. 2014
Mar. 2014 - Mar. 2014, Japanese - 二波長励起PLによるGaPN混晶の光学特性評価
末次麻希子; TOUHIDUL ISLAM A.Z.M; 花岡司; 福田武司; 鎌田憲彦; 八木修平; 矢口裕之
照明学会全国大会講演論文集(CD-ROM), 2014
2014 - 2014, Japanese - 六方晶SiC無極性面の酸化過程の実時間観察
後藤大祐; 八木修平; 土方泰斗; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Aug. 2013
Aug. 2013 - Aug. 2013, Japanese - Polarization properties of photoluminescence from individual isoelectronic traps in nitrogen delta-doped semiconductors: effect of host crystals
Hiroyuki Yaguchi
The Second International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, Aug. 2009
English, Invited oral presentation - SiおよびC原子放出モデルに基づく様々な酸化温度におけるSiC 酸化速度のモデル計算
2009 - 4H-SiC/酸化膜界面の光学的および電気的評価
2009 - In-situ分光エリプソメータによる低酸素分圧下におけるSiC酸化過程の観察
2009 - RF-MBE Growth of InN on 4H-SiC(0001) with Off-angles
2009 - Model calculation of SiC oxide growth rate at various oxidation temperatures based on the silicon and carbon emission model
2009 - In-situ Spectroscopic Ellipsometry Study of SiC Oxidation at Low Oxygen-Partial-Pressures
2009 - In-situ分光エリプソメ－タによる低酸素分圧下におけるSiC酸化過程の観察
2009 - RF-MBE法による4H-SiC(0001)オフ基板上へのInN直接成長
2009 - 窒素δドープGaAs/AlGaAsヘテロ構造における等電子トラップからの発光
2009 - 極低窒素濃度GaAsNのフォトルミネッセンス励起分光測定
2009 - フォトリフレクタンスによるGaAsNの電子構造に関する研究
2009 - GaAs(001)および(111)面基板上に作製した窒素δドープGaAs中の等電子トラップからの発光
2009 - Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(111)A
2009 - SiおよびC原子放出モデルに基づく様々な酸化温度におけるSiC 酸化速度のモデル計算
SiC及び関連ワイドギャップ半導体研究会第18回講演会, 2009 - 4H-SiC/酸化膜界面の光学的および電気的評価
SiC及び関連ワイドギャップ半導体研究会第18回講演会, 2009 - In-situ分光エリプソメータによる低酸素分圧下におけるSiC酸化過程の観察
SiC及び関連ワイドギャップ半導体研究会第18回講演会, 2009 - RF-MBE Growth of InN on 4H-SiC(0001) with Off-angles
8th International Conference on Nitride Semiconductors, 2009 - Model calculation of SiC oxide growth rate at various oxidation temperatures based on the silicon and carbon emission model
International Conference on Silicon Carbide and Related Materials 2009, 2009 - In-situ Spectroscopic Ellipsometry Study of SiC Oxidation at Low Oxygen-Partial-Pressures
International Conference on Silicon Carbide and Related Materials 2009, 2009 - In-situ分光エリプソメ－タによる低酸素分圧下におけるSiC酸化過程の観察
第70回応用物理学会学術講演会, 2009 - RF-MBE法による4H-SiC(0001)オフ基板上へのInN直接成長
第70回応用物理学会学術講演会, 2009 - 窒素δドープGaAs/AlGaAsヘテロ構造における等電子トラップからの発光
第70回応用物理学会学術講演会, 2009 - 極低窒素濃度GaAsNのフォトルミネッセンス励起分光測定
第70回応用物理学会学術講演会, 2009 - フォトリフレクタンスによるGaAsNの電子構造に関する研究
第70回応用物理学会学術講演会, 2009 - GaAs(001)および(111)面基板上に作製した窒素δドープGaAs中の等電子トラップからの発光
第５回量子ナノ材料セミナー, 2009 - Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(111)A
The 14th International Conference on Modulated Semiconductor Structures, 2009 - 極低濃度窒素をドーピングしたGaAs中の等電子トラップからの発光
2008 - ラマン分光を用いたGaInAsN混晶の発光効率の変化に関する研究
2008 - 多入射角分光エリプソメトリによるSiC/酸化膜界面の光学的評価
2008 - In-situ分光エリプソメータによるSiCの極薄領域における酸化過程の観察
2008 - 分光エリプソメータによるSiO2/SiC界面の光学的評価 -酸化膜厚依存性-
2008 - RF-MBE法を用いた3C-SiC基板上への立方晶InNの結晶成長およびその物性評価
2008 - RF-MBE法により成長させたA面InN膜のフォトルミネッセンス特性
2008 - RF-MBE法により成長した立方晶InNのPL測定 (II)
2008 - 極低濃度窒素をドーピングしたGaAs中の等電子トラップからの発光
第55回応用物理学関係連合講演会講演予稿集, 2008 - ラマン分光を用いたGaInAsN混晶の発光効率の変化に関する研究
第55回応用物理学関係連合講演会講演予稿集, 2008 - 多入射角分光エリプソメトリによるSiC/酸化膜界面の光学的評価
第55回応用物理学関係連合講演会講演予稿集, 2008 - In-situ分光エリプソメータによるSiCの極薄領域における酸化過程の観察
第55回応用物理学関係連合講演会講演予稿集, 2008 - 分光エリプソメータによるSiO2/SiC界面の光学的評価 -酸化膜厚依存性-
第55回応用物理学関係連合講演会講演予稿集, 2008 - RF-MBE法を用いた3C-SiC基板上への立方晶InNの結晶成長およびその物性評価
第55回応用物理学関係連合講演会講演予稿集, 2008 - RF-MBE法により成長させたA面InN膜のフォトルミネッセンス特性
第55回応用物理学関係連合講演会講演予稿集, 2008 - RF-MBE法により成長した立方晶InNのPL測定 (II)
第55回応用物理学関係連合講演会講演予稿集, 2008 - SiC 酸化速度の極薄膜厚領域におけるモデル計算
2007
Poster presentation - n-situ 分光エリプソメータによるSiC 酸化速度の酸素分圧依存性測定
2007
Poster presentation - In-situ 分光エリプソメータによるSiC の極薄膜厚領域における酸化過程の観察
2007
Poster presentation - 分光エリプソメータによるSiO2/SiC界面の光学的評価 -酸化法、面方位依存性-(2)
2007
Poster presentation - Model Calculation of SiC Oxidation Rates in the Thin Oxide Regime
2007
Poster presentation - Oxygen-Partial-Pressure Dependence of SiC Oxidation Rate Studied by In-situ Spectroscopic Ellipsometry
2007
Poster presentation - Lattice Polarity Determination for GaN by Modulation Spectroscopy
2007 - Improvement of the Surface Morphology of a-Plane InN Using Low-Temperature InN Buffer Layers
2007 - Photoluminescence of Cubic InN Films on MgO(001) Substrates
2007
Poster presentation - Photoluminescence Study of Hexagonal InN/InGaN Quantum Well Structures Grown on 3C-SiC (001) Substrates by Molecular Beam Epitax
2007
Poster presentation - 変調分光法によるGaNの極性評価
2007 - 光照射によるGaInAsN混晶の発光効率向上に関する研究
2007 - 窒素をデルタドープしたGaAsにおける単一の等電子トラップからの発光の偏光特性
2007 - 窒素をデルタドープしたGaP中の等電子トラップからの発光
2007 - SiC酸化速度の極薄膜厚領域におけるモデル計算
2007 - RF-MBE法を用いた4H-SiC基板(0001)面および(000-1)面上へのInGaN成長
2007 - In-situ分光エリプソメ-タによるSiC酸化速度の酸素分圧依存性測定
2007 - 分光エリプソメータによるSiO2/SiC界面の光学的評価 -酸化法、面方位依存性-
2007 - 分光エリプソメトリによるInGaN混晶の光学的特性評価
2007 - Twin photoluminescence peaks from single isoelectronic traps in nitrogen delta-doped GaAs
2007
Poster presentation - Modulation spectroscopic investigation on lattice polarity of GaN
2007 - RF-MBE法を用いた4H-SiC基板上へのInN/InGaN量子井戸構造の作製(III)
2007 - RF-MBE法を用いた3C-SiC基板上へのInN/InGaN量子井戸構造の作製
2007 - RF-MBE法によるGaNバッファー層を用いたサファイアR面基板上へのA面InNの成長
2007 - 窒素をデルタドープしたGaAsにおける等電子トラップからの発光
2007 - SiC 酸化速度の極薄膜厚領域におけるモデル計算
2007
Poster presentation - n-situ 分光エリプソメータによるSiC 酸化速度の酸素分圧依存性測定
2007
Poster presentation - In-situ 分光エリプソメータによるSiC の極薄膜厚領域における酸化過程の観察
2007
Poster presentation - 分光エリプソメータによるSiO2/SiC界面の光学的評価 -酸化法、面方位依存性-(2)
2007
Poster presentation - Model Calculation of SiC Oxidation Rates in the Thin Oxide Regime
2007
Poster presentation - Oxygen-Partial-Pressure Dependence of SiC Oxidation Rate Studied by In-situ Spectroscopic Ellipsometry
2007
Poster presentation - Lattice Polarity Determination for GaN by Modulation Spectroscopy
Technical Program of the 7th International Conference on Nitride Semiconductors, 2007 - Improvement of the Surface Morphology of a-Plane InN Using Low-Temperature InN Buffer Layers
Technical Program of the 7th International Conference on Nitride Semiconductors, 2007 - Photoluminescence of Cubic InN Films on MgO(001) Substrates
Technical Program of the 7th International Conference on Nitride Semiconductors, 2007
Poster presentation - Photoluminescence Study of Hexagonal InN/InGaN Quantum Well Structures Grown on 3C-SiC (001) Substrates by Molecular Beam Epitax
Technical Program of the 7th International Conference on Nitride Semiconductors, 2007
Poster presentation - 変調分光法によるGaNの極性評価
第68回応用物理学会学術講演会講演予稿集, 2007 - 光照射によるGaInAsN混晶の発光効率向上に関する研究
第68回応用物理学会学術講演会講演予稿集, 2007 - 窒素をデルタドープしたGaAsにおける単一の等電子トラップからの発光の偏光特性
第68回応用物理学会学術講演会講演予稿集, 2007 - 窒素をデルタドープしたGaP中の等電子トラップからの発光
第68回応用物理学会学術講演会講演予稿集, 2007 - SiC酸化速度の極薄膜厚領域におけるモデル計算
第68回応用物理学会学術講演会講演予稿集, 2007 - RF-MBE法を用いた4H-SiC基板(0001)面および(000-1)面上へのInGaN成長
第68回応用物理学会学術講演会講演予稿集, 2007 - In-situ分光エリプソメ-タによるSiC酸化速度の酸素分圧依存性測定
第68回応用物理学会学術講演会講演予稿集, 2007 - 分光エリプソメータによるSiO2/SiC界面の光学的評価 -酸化法、面方位依存性-
第68回応用物理学会学術講演会講演予稿集, 2007 - 分光エリプソメトリによるInGaN混晶の光学的特性評価
第68回応用物理学会学術講演会講演予稿集, 2007 - Twin photoluminescence peaks from single isoelectronic traps in nitrogen delta-doped GaAs
Abstract Book of the 13th International Conference on Modulated Semiconductor Structures, 2007
Poster presentation - Modulation spectroscopic investigation on lattice polarity of GaN
Extended Absctracts of the 26th Electronic Materials Symposium, 2007 - RF-MBE法を用いた4H-SiC基板上へのInN/InGaN量子井戸構造の作製(III)
2007 - RF-MBE法を用いた3C-SiC基板上へのInN/InGaN量子井戸構造の作製
2007 - RF-MBE法によるGaNバッファー層を用いたサファイアR面基板上へのA面InNの成長
2007 - 窒素をデルタドープしたGaAsにおける等電子トラップからの発光
2007 - 窒素イオン注入によりアモルファス化された4H-SiCを用いたMOSキャパシタの作製
2006
Poster presentation - テラヘルツ分光法によるSiC エピタキシャル成長膜のキャリヤ濃度、移動度、膜厚の同時評価
2006
Poster presentation - In-situ 分光エリプソメータによるSiC 酸化速度の酸素分圧依存性測定
2006
Poster presentation - 分光エリプソメータによるSiO2/SiC界面の光学的評価 -複数の入射角による測定-
2006
Poster presentation - 分光エリプソメータによるSiO2/SiC界面の光学的評価 -酸化法、面方位依存性-
2006
Poster presentation - GaN, InN結晶特性からみた立方晶、六方晶の違いに関する考察
2006 - Structural and Optical Characterization of High In Content Cubic InGaN on GaAs(001) Substrates by RF-MBE
2006
Poster presentation - Photoluminescence Study of Isoelectronic Traps in Dilute GaAsN alloys
2006
Poster presentation - Micro-photoluminescence study on nitrogen atomic-layer doping in GaAs
2006 - RF-MBE growth of InN/InGaN quantum well structures on 3C-SiC substrates
2006
Poster presentation - RF-MBE growth of a-plane InN on r-plane sapphire with a GaN underlayer
2006
Poster presentation - Simultaneous Determination of the Carrier Concentration, Mobility and Thickness of SiC Homo-Epilayers Using Terahertz Reflectance Spectroscopy
2006
Poster presentation - 窒素イオン注入によりアモルファス化された4H-SiCを用いたMOSキャパシタの作製
2006 - 分光エリプソメータによるSiO2/SiC界面の光学的評価 -酸化法、面方位依存性-
2006 - 赤外反射分光法を用いたSiCエピ膜の電気的特性の評価
2006 - 分光エリプソメトリによる高In組成InGaN の光学的評価
2006 - 窒素をδドープしたGaAs における等電子トラップの顕微フォトルミネッセンス測定
2006 - RF-MBE法により成長した立方晶InNのPL測定
2006 - Micro-photoluminescence study of nitrogen atomic-layer doped GaAs
2006 - Micro-photoluminescence study of nitrogen delta-doped GaAs grown by metalorganic vapor phase epitaxy
2006
Poster presentation - Micro Raman study on the improvement of luminescence efficiency of GaAsN alloys
2006
Poster presentation - RF-MBE法を用いた立方晶InNの結晶成長(IV)
2006 - ラマン分光を用いたGaAsN混晶の発光効率向上に関する研究
2006 - In-situ分光エリプソメータによるSiCの酸化の実時間観察
2006 - RF-MBE法を用いたSiC基板上へのInN/InGaN量子井戸構造の作製
2006 - RF-MBE法を用いた3C-SiC(001)基板上への六方晶InNの結晶成長
2006 - Real-time observation of SiC oxidation using an in situ spectroscopic ellipsometer
2006 - 窒素イオン注入によりアモルファス化された4H-SiCを用いたMOSキャパシタの作製
2006
Poster presentation - テラヘルツ分光法によるSiC エピタキシャル成長膜のキャリヤ濃度、移動度、膜厚の同時評価
2006
Poster presentation - In-situ 分光エリプソメータによるSiC 酸化速度の酸素分圧依存性測定
2006
Poster presentation - 分光エリプソメータによるSiO2/SiC界面の光学的評価 -複数の入射角による測定-
2006
Poster presentation - 分光エリプソメータによるSiO2/SiC界面の光学的評価 -酸化法、面方位依存性-
2006
Poster presentation - GaN, InN結晶特性からみた立方晶、六方晶の違いに関する考察
2006 - Structural and Optical Characterization of High In Content Cubic InGaN on GaAs(001) Substrates by RF-MBE
2006
Poster presentation - Photoluminescence Study of Isoelectronic Traps in Dilute GaAsN alloys
2006
Poster presentation - Micro-photoluminescence study on nitrogen atomic-layer doping in GaAs
2006 - RF-MBE growth of InN/InGaN quantum well structures on 3C-SiC substrates
2006
Poster presentation - RF-MBE growth of a-plane InN on r-plane sapphire with a GaN underlayer
2006
Poster presentation - Simultaneous Determination of the Carrier Concentration, Mobility and Thickness of SiC Homo-Epilayers Using Terahertz Reflectance Spectroscopy
2006
Poster presentation - 窒素イオン注入によりアモルファス化された4H-SiCを用いたMOSキャパシタの作製
2006 - 分光エリプソメータによるSiO2/SiC界面の光学的評価 -酸化法、面方位依存性-
2006 - 赤外反射分光法を用いたSiCエピ膜の電気的特性の評価
2006 - 分光エリプソメトリによる高In組成InGaN の光学的評価
2006 - 窒素をδドープしたGaAs における等電子トラップの顕微フォトルミネッセンス測定
2006 - RF-MBE法により成長した立方晶InNのPL測定
2006 - Micro-photoluminescence study of nitrogen atomic-layer doped GaAs
2006 - Micro-photoluminescence study of nitrogen delta-doped GaAs grown by metalorganic vapor phase epitaxy
2006
Poster presentation - Micro Raman study on the improvement of luminescence efficiency of GaAsN alloys
2006
Poster presentation - RF-MBE法を用いた立方晶InNの結晶成長(IV)
2006 - ラマン分光を用いたGaAsN混晶の発光効率向上に関する研究
2006 - In-situ分光エリプソメータによるSiCの酸化の実時間観察
2006 - RF-MBE法を用いたSiC基板上へのInN/InGaN量子井戸構造の作製
2006 - RF-MBE法を用いた3C-SiC(001)基板上への六方晶InNの結晶成長
2006 - Real-time observation of SiC oxidation using an in situ spectroscopic ellipsometer
2006 - RF-MBE法を用いた中間組成InGaN膜上へのInN/InGaN量子井戸構造の作製
平野 茂; 岩橋洋平; 折原 操; 土方泰斗; 矢口裕之; 吉田貞史
Sep. 2005
Japanese, Oral presentation - RF-MBE法を用いた4H-SiC基板上へのInN/InGaN量子井戸構造の作製（II）
折原 操; 岩橋洋平; 平野 茂; 土方泰斗; 矢口裕之; 吉田貞史
Sep. 2005
Japanese, Oral presentation - ラマン分光を用いたGaAsN混晶の光照射による構造変化の評価
矢口裕之; 清水博史; 森桶利和; 青木貴嗣; 土方泰斗; 吉田貞史; 宇佐美徳隆; 吉田正裕; 秋山英文; 青木大一郎; 尾鍋研太郎
Sep. 2005
Japanese, Oral presentation - 低オフ角C面SiC基板上の酸化膜の評価
土方泰斗; 矢口裕之; 吉田貞史; 高田恭孝; 小林啓介; 野平博司; 服部健雄
Sep. 2005
Japanese - 赤外反射分光法を用いたSiCエピ膜の電気的特性の評価
大石慎吾; 土方泰斗; 矢口祐之; 吉田貞史
Sep. 2005
Japanese, Poster presentation - 分光エリプソメータによるSiO2/SiC界面の光学的評価 -紫外領域への拡張-
窪木亮一; 覚張光一; 土方泰斗; 矢口裕之; 吉田貞史
Sep. 2005
Japanese, Poster presentation - 様々な傾斜角を有するSiC基板上の酸化膜の評価
土方泰斗; 矢口裕之; 吉田貞史; 高田恭孝; 小林啓介; 野平博司; 服部健雄
Apr. 2005
Japanese, Oral presentation - In situ エリプソメータによるSiCの酸化の実時間観察
覚張光一; 窪木亮一; 土方泰斗; 矢口裕之; 吉田貞史
Apr. 2005
Japanese - 赤外反射分光法を用いたSiCエピ膜の電気的特性の評価
大石慎吾; 土方泰斗; 矢口裕之; 吉田貞史
Mar. 2005
Japanese, Oral presentation - 窒素をδドープしたGaAsの顕微フォトルミネッセンス
花島君俊; 森桶利和; 青木貴嗣; 土方泰斗; 矢口裕之; 吉田貞史; 吉田正裕; 秋山英文; 平山琢; 片山竜二; 尾鍋研太郎
Mar. 2005
Japanese, Poster presentation - RF-MBE法を用いた4H-SiC基板上へのInN/InGaN量子井戸構造の作製
折原操; 北村芳広; 岩橋洋平; 平野茂; 土方泰斗; 矢口裕之; 吉田貞史
Mar. 2005
Japanese, Oral presentation - Real Time Observation of SiC Oxidation Using In-Situ Spectroscopic Ellipsometer
2005
Poster presentation - Off-Angle Dependence of Characteristics of 4H-SiC-Oxide Interfaces
2005
Poster presentation - 分光エリプソメータによるSiO2/SiC界面の光学的評価 -紫外領域への拡張-
2005 - RF-MBE growth of cubic InN films on MgO (001) substrates
2005
Poster presentation - Photo-induced improvement of radiative efficiency and structural changes in GaAsN alloys
2005
Poster presentation - 分光エリプソメータによるSiO2/SiC界面の光学的評価 -紫外領域への拡張-
2005
Poster presentation - In-situ エリプソメータによるSiC の酸化の実時間観察
2005
Poster presentation - Real Time Observation of SiC Oxidation Using In-Situ Spectroscopic Ellipsometer
Final Technical Program, 2005
Poster presentation - Off-Angle Dependence of Characteristics of 4H-SiC-Oxide Interfaces
Final Technical Progam, 2005
Poster presentation - RF-MBE growth of cubic InN films on MgO (001) substrates
2005
Poster presentation - Photo-induced improvement of radiative efficiency and structural changes in GaAsN alloys
2005
Poster presentation - In-situ エリプソメータによるSiC の酸化の実時間観察
2005
Poster presentation - 分光エリプソメータによるSiC酸化膜の初期酸化過程の観察(IV)
覚張光一; 土方泰斗; 矢口裕之; 吉田貞史
第65回応用物理学会学術講演会講演予稿集, Sep. 2004
Japanese, Oral presentation - ラマン散乱分光法によるInAsN混晶の評価
本村寛; 土方泰斗; 矢口裕之; 吉田貞史; 飛田聡; 西尾晋; 片山竜二; 尾鍋研太郎
第65回応用物理学会学術講演会講演予稿集, Sep. 2004
Japanese, Oral presentation - 低窒素濃度GaPN混晶のフォトルミネッセンス
青木貴嗣; 森桶利和; 土方泰斗; 矢口裕之; 吉田貞史; 張保平; 三吉靖郎; 尾鍋研太郎
第65回応用物理学会学術講演会講演予稿集, Sep. 2004
Japanese, Oral presentation - レーザ照射によるGaAsN混晶の発光効率向上の窒素濃度依存性
森桶利和; 青木貴嗣; 呉智元; 吉田正裕; 秋山英文; 土方泰斗; 矢口裕之; 吉田貞史; 青木大一郎; 尾鍋研太郎
第65回応用物理学会学術講演会講演予稿集, Sep. 2004
Japanese, Oral presentation - RF-MBE法を用いた4H-SiC(0001)基板上へのInNの結晶成長
北村芳広; 岩橋洋平; 多田宏之; 折原操; 土方泰斗; 矢口裕之; 吉田貞史
第65回応用物理学科学術講演会講演予稿集, Sep. 2004
Japanese, Oral presentation - RF-MBE法によるMgO(001)基板上への立方晶GaNの成長
多田宏之; 北村芳広; 岩橋洋平; 折原操; 土方泰斗; 矢口裕之; 吉田貞史
第65回応用物理学会学術講演会講演予稿集, Sep. 2004
Japanese, Oral presentation - RF-MBE法を用いた4H-SiC基板上へのInGaN結晶成長
折原操; 北村芳広; 岩橋洋平; 多田宏之; 土方泰斗; 矢口裕之; 吉田貞史
第65回応用物理学会学術講演会講演予稿集, Sep. 2004
Japanese, Oral presentation - RF-MBE法を用いた立方晶InNの結晶成長(III)
岩橋洋平; 北村芳広; 多田宏之; 折原操; 土方泰斗; 矢口裕之; 吉田貞史
第65回応用物理学会学術講演会講演予稿集, Sep. 2004
Japanese, Oral presentation - Growth of high-quality hexagonal InN on 3C-SiC (001) by molecular beam epitaxy
H. Yaguchi; Y. Kitamura; K. Nishida; Y. Iwahashi; Y. Hijikata; S. Yoshida
International Workshop on Nitride Semiconductors, Jul. 2004
English, Oral presentation - 高エネルギー分解能光電子分光による4H-SiC(000-1)面上酸化膜の評価
2004
Poster presentation - 分光エリプソメータによるSiCの初期酸化過程の観察
2004
Poster presentation - Epitaxial Growth of Hexagonal and Cubic InN Films by Gas Source Molecular Beam Epitaxy
2004 - Characterization of Oxide Films on SiC Epitaxial (000-1) Faces by Angle-Resolved Photoemission Spectroscopic Measurements using Synchrotron Radiation
2004
Poster presentation - 高エネルギー分解能光電子分光による4H-SiC(000-1)面上酸化膜の評価
SiC及び関連ワイドギャップ半導体研究会第13回講演会予稿集, 2004
Poster presentation - 分光エリプソメータによるSiCの初期酸化過程の観察
SiC及び関連ワイドギャップ半導体研究会第13回講演会予稿集, 2004
Poster presentation - Epitaxial Growth of Hexagonal and Cubic InN Films by Gas Source Molecular Beam Epitaxy
Proceedings of 7th China-Japan Symposium on Thin Films, 2004 - Characterization of Oxide Films on SiC Epitaxial (000-1) Faces by Angle-Resolved Photoemission Spectroscopic Measurements using Synchrotron Radiation
2004
Poster presentation - Characterization of oxide films on SiC by spectroscopic ellipsometer
2000 - Characterization of oxide films on SiC by spectroscopic ellipsometer
Extended Abstracts of 1st International Workshop on Ultra-Low-Loss Power Device Technology, 2000 - Built-in Electric Field Strength in InP/n+-InP Determined by Photoellipsometry and Photoreflectance
1996 - The in Situ Growth of Lateral Confinement Enhanced Rectangular AlGaAs/AlAs Quantum Wires by Utilizing the Spontaneous Vertical Quantum Wells
1995 - The in Situ Growth of Lateral Confinement Enhanced Rectangular AlGaAs/AlAs Quantum Wires by Utilizing the Spontaneous Vertical Quantum Wells
Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials, 1995 - Photoreflectance and Photoluminescence Study of Direct- and Indirect-Gap Band Lineups of GaAsP/GaP Strained Quantum Wells
1994 - Photoreflectance and Photoluminescence Study of Direct- and Indirect-Gap Band Lineups of GaAsP/GaP Strained Quantum Wells
Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials, 1994 - Characterization of Interface Roughness in Ge/SiGe Heterostructures Using Photoreflectance Spectroscopy
1993 - MOVPE Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates
1993 - Characterization of Interface Roughness in Ge/SiGe Heterostructures Using Photoreflectance Spectroscopy
Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials, 1993 - MOVPE Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates
Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials, 1993 - Photoreflectance study of GaAs/GaAsP strained-barrier quantum well structures
1992 - Photoreflectance study of GaAs/GaAsP strained-barrier quantum well structures
Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials, 1992 - 28p-K-10 Glide Velocity of Dislocations in Heteroepitaxial Thin Films
Yamashita Y.; Maeda K.; Mera Y.; Yaguchi H.; Shiraki Y.
Meeting Abstracts of the Physical Society of Japan, 1991, The Physical Society of Japan
1991 - 1991, Japanese - Si1-xGex歪薄膜の熱処理による歪の緩和
矢口裕之; 張保平; 藤田研; 深津晋; 白木靖寛; 伊藤良一
Sep. 1990
Japanese, Oral presentation - SbによるSi/Ge界面ミキシングの抑制
藤田研; 深津晋; 矢口裕之; 五十嵐孝行; 張保平; 白木靖寛; 伊藤良一
Sep. 1990
Japanese, Oral presentation - Suppression of Interfacial Mixing in Si/Ge Superlattices by Sb Deposition
K. Fujita; S. Fukatsu; H. Yaguchi; T. Igarashi; Y. Shiraki; R. Ito
22nd Conference on Solid State Devices and Materials, Aug. 1990
English, Oral presentation - 原子レベルで平坦なシリコン上の酸化膜形成とその構造
五十嵐孝行; 高瀬和彦; 服部健雄; 矢口裕之; 藤田研; 深津晋; 白木靖寛
Mar. 1990
Japanese, Oral presentation - Pb/Si(111)表面超構造のRHEEDによる観察
矢口裕之; 馬場茂; 金原粲
Dec. 1987
Japanese, Oral presentation - RHEEDによるPb/Si(111)表面超構造の研究
矢口裕之; 馬場茂; 金原粲
Nov. 1987
Japanese, Oral presentation - RHEED Study of Superstructures of Submonolayer Lead Films on Silicon(111) Surfaces
H. Yaguchi; S. Baba; A. Kinbara
4th International Conference on Solid Films and Surfaces, Aug. 1987
English, Oral presentation
- Optical Society of Japan
- Materials Research Society
- American Physical Society
- The Japan Society of Applied Physics
- Improvement of the efficiency of photovoltaic cells using two-step optical absorption through band tail states
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research, Grant-in-Aid for Scientific Research (C), 01 Apr. 2024 - 31 Mar. 2027
Saitama University
Grant amount(Total)：4550000, Direct funding：3500000, Indirect funding：1050000
Grant number：24K07574 - Development of High Efficiency Photovoltaic Cells Using Electron Localized States in Dilute Nitride Semiconductors
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B), Grant-in-Aid for Scientific Research (B), 01 Apr. 2019 - 31 Mar. 2022
Yaguchi Hiroyuki, Saitama University
Grant amount(Total)：17420000, Direct funding：13400000, Indirect funding：4020000
We have investigated the improvement in the conversion efficiency of intermediate-band solar cells by utilizing two-step optical absorption through electron localized states in dilute nitride semiconductors. First-principles calculations based on the supercell method revealed that the arrangement of nitrogen atoms in GaPN significantly varies the band gap energy and causes the formation of localized states. We found from the excitation power dependence of two-wavelength excited photoluminescence and photocurrent characteristics of prototype solar cells that above-gap excitation and below-gap excitation synergistically increase photogenerated carriers, which leads to the increase in the efficiency of solar cells.
Grant number：19H02612
論文ID：47638463, 講演・口頭発表等ID：39504829, 受賞ID：33629959 - Characterization of defect levels in UV-LEDs by below-gap excitation light under operating condition
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), Grant-in-Aid for Scientific Research (C), 01 Apr. 2018 - 31 Mar. 2021
Kamata Norihiko, Saitama University
Grant amount(Total)：4160000, Direct funding：3200000, Indirect funding：960000
It is possible to characterize nonradiative recombination (NRR) centers by detecting intensity change of photoluminescence (PL) due to the addition of an intermittent below-gap excitation (BGE) light under constant above-gap excitation (AGE) light. The change of EL intensity and forward current due to the BGE light is used to characterize NRR centers in an LED under forward bias condition in this study. The method is valid for a wide range of carrier injection and connects the result of weak excitation by previous PL study and actual LED performance.
Grant number：18K04954 - Study on the Behavior of Defects in Dilute Nitride Semiconductors and Improvement of Device Reliability
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), Grant-in-Aid for Scientific Research (C), 01 Apr. 2014 - 31 Mar. 2017
Ueda Osamu; IKENAGA NORIAKI; YAGI SHUHEI, Kanazawa Institute of Technology
Grant amount(Total)：5070000, Direct funding：3900000, Indirect funding：1170000
In order to clarify degradation mechanism of optical devices fabricated from dilute nitride semiconductors such as GaInNAs, grown-in defects were characterized by transmission electron microscopy, and generation and multiplication of defects in the crystals under laser irradiation were investigated.
It has been shown that defects such as point defect clusters and dislocation loops are not generated in as-grown GaInNAs crystals. Furthermore, in the case of laser irradiation of GaInNAs/GaAs SQW structure, we have found that the emission efficiency increased for lower laser power density and that the emission efficiency drastically increased then decreased for higher power density. In both cases, no structural defects were newly generated by the laser irradiation. Further increase in the laser power density is required for detailed investigation of the degradation mechanism.
Competitive research funding, Grant number：26390057 - Advanced research on semiconductor optical device materials by controlling phonon transport under non-thermal equilibrium state
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B), Grant-in-Aid for Scientific Research (B), 01 Apr. 2013 - 31 Mar. 2017
Ishitani Yoshihiro; Ken Morita; Bei Ma; Kensuke Oki, Chiba University
Grant amount(Total)：18720000, Direct funding：14400000, Indirect funding：4320000
Phonon processes affect various carrier dynamics dominating the device properties of semiconductors: energy conversion efficiency of solar cells, association and dissociation of excitons, nonradiative carrier recombination, and so forth are the examples. Many reports discuss the detail dynamics of electron-hole-exciton system, whereas the analysis including all of phonon, electron, and radiation is still at primitive stage. In this research we have characterized the flow of excitation and deexcitation of electron-hole-exciton system by integrating various elementary processes including phononic one and various parameters of electron density and several temperatures reflecting kinetic energies depending on physical material properties, excitation condition, and device structures. Further, we have obtained some results on the effects of phonon localization on the exciton stability and transition rate related to deep levels in GaN.
Competitive research funding, Grant number：25286048 - Generation and control of quantum correlated photons from atomic-layer doped semiconductors
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B), Grant-in-Aid for Scientific Research (B), 01 Apr. 2012 - 31 Mar. 2015
YAGUCHI Hiroyuki; ONABE Kentaro; KATAYAMA Ryuji; KUBOYA Shigeyuki; HIJIKATA Yasuto; YAGI Shuhei; AKIYAMA Hidefumi, Saitama University, Principal investigator
Grant amount(Total)：19240000, Direct funding：14800000, Indirect funding：4440000
We have grown nitrogen and erbium atomic-layer doped semiconductors to obtain unpolarized single photons and quantum-entangled photon pairs with highly reproducible wavelengths, which play a key role in the quantum information science. We have successfully observed completely unpolarized biexciton and exciton emission lines, which are suitable for the application to polarization-entangled photon pairs. We have quantitatively studied the temperature dependence of the surface segregation of Er atoms in GaAs during molecular beam epitaxy, and found that overlayer growth at low temperatures is effective in suppressing the surface segregation and obtaining atomic-layer doped structures.
Competitive research funding, Grant number：24360004
論文ID：17925482 - Elucidation of formation mechanism of oxidation-induced fault in silicon carbide semiconductors
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), Grant-in-Aid for Scientific Research (C), 01 Apr. 2012 - 31 Mar. 2015
HIJIKATA Yasuto; YAGUCHI Hiroyuki, Saitama University
Grant amount(Total)：5460000, Direct funding：4200000, Indirect funding：1260000
For a better understanding of oxidation mechanism of silicon carbide (SiC), 1)Profiling of oxides on SiC, 2)Photoluminescence imaging of oxidized substrates, 3)Real-time observations of SiC oxidation processes have been performed. From result 1), we for the first time succeeded in the observation of “Si emission phenomenon” during oxidation of SiC from the oxidation interface to oxide. According to result 2), we found that there were stacking faults that are deformed by oxidation and there was a possibility that faults, which are similar to “oxidation-induced stacking fault” seen in Si oxidation, were also formed in Si oxidation. From result 3), a unified SiC oxidation model was established, and the formations of interface defect were simulated in terms of interface concentration of emitted Si and C atoms.
Competitive research funding, Grant number：24560365 - Growth of high phase purity cubic III-nitride semiconductor thin films and application of their heterostructures
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B), Grant-in-Aid for Scientific Research (B), 2010 - 2012
ONABE Kentaro; YAGUCHI Hiroyuki; KATAYAMA Ryuji; KUBOYA Shigeyuki; SAKUNTAM Sanorpim, The University of Tokyo
Grant amount(Total)：13520000, Direct funding：10400000, Indirect funding：3120000
High cubic phase purity films and their hetero-structures of III-nitride semiconductors including GaN, InN, AlN and related alloys have been realized using metalorganic vapor phase epitaxy or molecular beam epitaxy. Their basic physical properties such as phase purity, defect nature, luminescence and electrical conduction have been clarified in relation with the growth conditions. In particular, the usefulness of YSZ(001) substrates for cubic InN and InGaN films, conductivity control by Si doping to cubic GaN and AlGaN films, and the bandgap value for cubic AlN are established.
Competitive research funding, Grant number：22360005 - Study of Optical Irradiation on Nobel Materials and Quantum DotStructures for Next Generation Optical Devices
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), Grant-in-Aid for Scientific Research (C), 2010 - 2012
UEDA Osamu; YAMAGUCHI Atsushi; SAKUMA Yoshiki; GONOKAMI Makoto; YOSHIMOTO Masahiro; YAGUCHI Hiroyuki; IKENAGA Noriaki, Kanazawa Institute of Technology
Grant amount(Total)：3900000, Direct funding：3000000, Indirect funding：900000
In order to clarify the mechanism of gradual degradation of optical devices, degree of degradation under optical irradiation was evaluated for materials for next generation optical devices and quantum dot structure. It was clarified that striking degradation phenomenon is observed in GaInNAs. However, no definite degradation phenomena have been confirmed for InGaN and AlInGaAs. The InAs quantum dot structure did not show any degradation under comparatively strong optical irradiation. It is required to carry out the similar experiment for practical device structures.
Competitive research funding, Grant number：22560012 - Single Photon Generation from locally doped semiconductors
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B), Grant-in-Aid for Scientific Research (B), 2009 - 2011
YAGUCHI Hiroyuki; HIJIKATA Yasuto; ONABE Kentaro; KATAYAMA Ryuji; YAGI Shuhei; KUBOYA Shigeyuki; AKIYAMA Hidefumi, Saitama University, Principal investigator
Grant amount(Total)：18460000, Direct funding：14200000, Indirect funding：4260000
We have fabricated locally doped semiconductors using atomic layer doping to realize the generation of unpolarized single photons with highly reproducible wavelengths, which is essential in the field of quantum information technology, such as quantum cryptography. We have obtained unpolarized single photons by selecting a proper face of the substrate to grow nitrogen atomic layer doped semiconductors. In addition, we have successfully observed biexcition emission from nitrogen atomic layer doped semiconductors, which leads to the generation of entangled photon pairs.
Competitive research funding, Grant number：21360004 - 有機N原料によるInNおよび関連混晶薄膜のMOVPE成長
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research on Priority Areas, Grant-in-Aid for Scientific Research on Priority Areas, 2009 - 2010
The University of Tokyo
Grant amount(Total)：6400000, Direct funding：6400000
Competitive research funding, Grant number：21016003 - Growth and material applications of narrow-bandgap III-V-N alloy semiconductor quantum nano-structures
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B), Grant-in-Aid for Scientific Research (B), 2007 - 2009
ONABE Kentaro; KATAYAMA Ryuji; YAMAMOTO Takahisa; YAGUCHI Hiroyuki, The University of Tokyo
Grant amount(Total)：18720000, Direct funding：14400000, Indirect funding：4320000
In-containing III-V-N type alloy semiconductors, such as InAsN, InGaAsN, InGaPN and InPN, have been grown by MOVPE in the form of thin films or quantum dots. The growth characteristics and material properties, such as bandgap reduction and luminescence, have been clarified in relation with the N incorporation. In particular, room-temperature photoluminescence of 1.2μm wavelength has been realized with the InAsN quantum dots. A novel potential of III-V-N type alloy semiconductors for useful applications has been demonstrated with this study.
Competitive research funding, Grant number：19360003 - InN系窒化物ナノデバイス/ナノプロセスの分子線エピタキシ法による新展開
2002 - 2007
Coinvestigator - Study on single photon emission utilizing isoelectronic traps
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), Grant-in-Aid for Scientific Research (C), 2005 - 2006
YAGUCHI Hiroyuki; YOSHIDA Sadafumi; HIJIKATA Yasuto, Saitama University, Principal investigator
Grant amount(Total)：3500000, Direct funding：3500000
Single photon emitting devices are expected to play an important role in the quantum information technology, such as quantum cryptography and quantum computing. In this study, we have studied the properties of photoluminescence due to single isoelectronic traps in nitrogen delta-doped GaAs and GaP to examine the prospect for applications to single photon emitting devices. We have optimized growth conditions to obtain nitrogen pairs with specific configurations. As a result, we have successfully observed sharp photoluminescence lines due to a limited number of isoelectronic traps within a diameter of 1 μm for nitrogen delta-doped GaAs with low nitrogen concentrations. This result shows good prospects for the single photon emitting device utilizing single isoelectronic traps. We have also observed twin photoluminescence peaks from single isoelectronic traps due to nitrogen pairs in nitrogen delta-doped GaAs. The twin photoluminescence peaks showed almost the same intensity and linear polarizations which are completely orthogonal to each other. This unique phenomenon has prospects of applications to novel optoelectronic devices. Furthermore, we have investigated the excitation power density and nitrogen concentration dependence of the changes in the radiative efficiency of GaAsN alloys to examine the mechanism of the novel phenomenon that photoexcitation at low temperatures improves the radiative efficiency. We have found that the radiative efficiency improvement is closely related to local structural changes by using in-situ micro Raman scattering spectroscopy.
Competitive research funding, Grant number：17560004 - Characterization of the Interfaces between IV-IV Semiconductors and Ultra-Thin Oxide films
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B), Grant-in-Aid for Scientific Research (B), 2001 - 2002
YOSHIDA Sadafumi; HIJIKATA Yasuto; YAMAGUCHI Hiroyuki, Saitama University
Grant amount(Total)：15300000, Direct funding：15300000
We have used spectroscopic ellipsometry, together with photoelectron spectroscopy, to investigate the interfaces between the oxide film and SiC, structural changes in the interfaces by various kinds of heat treatment after the oxide film formation, and the correlation with their electrical properties, in order to search appropriate oxidation process good for SiC MOSFETs.
We have developed in-situ spectroscopic ellipsometry system to acquire the knowledge for clarifying the formation process of ultra-thin oxide films on SiC and microstructure of the interfaces. It is found that the composition of the oxide film formed in the initial stage of oxidization is different from that of stoichiometric SiO_2 and that the refractive indices of the interface layers, which are larger than that of SiC and SiO_2, decrease with heat treatment. In order to make clear the relation between the refractive indices of the interfaces and interface state density, we have carried out spectroscopic ellipsometry and C-V measurements for the SiC MOS structures whose interface state density is increased by gamma ray irradiation. We have found that the refractive indices of the interface layers increase with gamma ray irradiation, which suggest that the refractive indices obtained by spectroscopic ellipsometry are closely related to the interface state density, which affects the channel mobility in SiC MOSFET. Angle-resolved x-rays photoemission spectroscopy and ultraviolet photoemission spectroscopy were performed to clarify the change of composition and bonding state at the oxide/SiC interfaces by heat treatment. In addition, we have used micro infrared reflection spectroscopy to characterize the electrical properties of SiC bulk crystals and demonstrated that the distribution of the career concentration and mobility in SiC wafers can be 〓〓〓〓sured nondestructively without electric contacts.
This research project brings about a better understanding of the structures of oxide/SiC interfaces and reveals that spectroscopic ellipsometry is an excellent characterization technique and is applicable to monitoring tool during device processes.
Competitive research funding, Grant number：13450120 - Fabrication of novel monolithic optical devices composed of blue laser diodes and ferroelectric optical waveguides
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), Grant-in-Aid for Scientific Research (C), 1998 - 1999
MASUDA Atsushi; SHIMIZU Tatsuo; YAGUCHI Hiroyuki; ONABE Kentaro; MORIMOTO Akiharu, Japan Advanced Institute of Science and Technology
Grant amount(Total)：4000000, Direct funding：4000000
In order to develop novel monolithic optical devices composed of blue laser diodes and ferroelectric optical waveguides, ferroelectric lead zirconate titanate (PZT) films were deposited on gallium nitride (GaN). PZT films were deposited by pulsed laser ablation on cubic GaN prepared on (001) GaAs by metalorganic vapor phase epitaxy for the first time. PZT films were preferentially [100] oriented on GaN with MgO buffer layers although PZT films were randomly oriented without MgO buffer layer. The origin for the difference is thought that MgO buffer layer acts as a diffusion barrier between PZT and GaN.Relationship between the crystallinity and the resistance against oxidation was also studied. It was found that GaN with lower crystallinity shows higher resistivity. It was also revealed that the crystallinity degrades and the surface roughness decreases both with an exposure to oxygen atmosphere around 500 ℃.
Competitive research funding, Grant number：10650005 - Domain-Inversion Epitaxy and Its Application to Wavelength Conversion Devices
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (A), Grant-in-Aid for Scientific Research (A), 1996 - 1998
ITO Ryoichi; USAMI Noritaka; YAGUCHI Hiroyuki; KONDO Takashi; ONABE Kentaro; SHIRAKI Yasuhiro, The University of Tokyo
Grant amount(Total)：41700000, Direct funding：41700000
We have proposed a novel epitaxial growth technique, sublattice reversal epitaxy, for growing domain inverted compound semiconductors, and demonstrated in GaAs/Si/GaAs (100), GaAP/Si/GaP(100), GaAs/Ge/GaAs (100), and GaAs/Ge/GaAs(111) systems using MBE.Stiblattice reversal (i.e. domain inversion) has been confirmed by RHHED observation and preferential etching.
2. Characterization of Sublattice Reversed Epilayers
We have confirmed that the sign of the quadratic nonlinear optical coefficient of the epilayer grown by the sublattice-reversal epitaxy is indeed reversed with respect to that of the substrate using the reflection SHG technique. XTEM observation of the grown epilayers revealed that sublattice reversal was assisted by the selfanihilation of antiphase domains. XTEM observation revealed, also, that sublattice reversed epilayer in the GaAs/Ge/GaAs(111) system was dominated by the formation of unusual (111) SIGMA3 grain boundaries.
3. Fabrication of Periodically Domain Inverted Structures
We have proposed a technique for fabricating periodically domain inverted structures of AlGaAs using GaAs/Ge/GaAs(100) sublattice reversal epitaxy. Using regrowth procedure on template fabricated by sublattice reversal epitaxy and etching, periodically domain inverted semiconductors free from antiphase domain can be grown. We have succeeded in fabricating periodically domain inverted GaAs structures of very high quality. Fabrication of wavelength conversion devices using this technique is now in progress.
Competitive research funding, Grant number：08405002 - Research on Optical Transitions of Indirect Semiconductors with Novel Superstructures
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B), Grant-in-Aid for Scientific Research (B), 1996 - 1997
SHIRAKI Yasuhiro; USAMI Noritaka; YAGUCHI Hiroyuki; KONDO Takashi; ONABE Kentaro; ITO Ryoichi, The University of Tokyo
Grant amount(Total)：8600000, Direct funding：8600000
Optical properties of Neighboring Confinement Structure (NCS), a promising candidate for light emitter based on indirect semiconductors, were systematically investigated. NCS consists of a single pair of a quantum well (QW) for electrons and a QW for holes embedded between barrier layrs. Intense PL with enhanced no-phonon (NP) line was clealy observed from NCS based on SiGe- and AlGaP-based semiconductors. Quantum confinement effect was clearly observed by varying the well width, showing that the enhanced NP lines come from the expected transitions of the NCS.Post growth annealing was found to lead to selective quenching of the NP line compared to its transverse optical phonon replica. Time-resolved PL study clarified that the radiative lifetime of the annealed sample increases with increasing temperature, while that of the as-grown sample shows no significant change at low temperatures. These results were reasonably explained by considering that the exciton localization at the heterointerface is the controlling mechanism for the NP enhancement observed at low temperatures in NCS.The idea was supported by the increase of the critical temperature of the exciton delocalization in the sample with well width of around critical thickness for islanded growth where well width fluctuation is considered to be significant.
Competitive research funding, Grant number：08455008 - シリコン・ゲルマニウム規則混晶からの光第二高調波発生に関する研究
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), Grant-in-Aid for Scientific Research (C), 1996 - 1996
The University of Tokyo, Principal investigator
Grant amount(Total)：2200000, Direct funding：2200000
Competitive research funding, Grant number：08650005 - 非対称構造半導体量子井戸の2次非線形光学特性の研究
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), Grant-in-Aid for Scientific Research (C), 1996 - 1996
The University of Tokyo
Grant amount(Total)：2200000, Direct funding：2200000
Competitive research funding, Grant number：08650045 - STUDY ON GROWTH AND MATERIAL PROPERTIES OF METASTABLE NITRIDE ALLOY SEMICONDUCTORS
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B), Grant-in-Aid for Scientific Research (B), 1994 - 1996
ONABE Kentaro; YAGUCHI Hiroyuki; KONDO Takashi; OSADA Toshihito; SHIRAKI Yasuhiro; ITO Ryoichi, THE UNIVERSITY OF TOKYO
Grant amount(Total)：8400000, Direct funding：8400000
Growth and material properties of nitride alloy semiconductors of the type III-V-N,where GaPN alloy is the representative, have been investigated. This group of alloy semiconductors had been hard to grow due to their extreme immiscibility. The present research project achieved the following major results, which will lead to new technological applications.
1.Growth of GaPN Alloys : The growth characteristics of GaPN alloy by metalorganic vapor phase epitaxy using dimethylhydrazine have been clarified. The alloy composition is much affected by the desorption of N atom species from growing surface. Based on these growth characteristics, GaPN alloys with the N concentration as much as 6% have been successfully attained.
2.The Origin and Property of Radiative Levels : From optical measurements and analyzes like absorption, photoluminescence and excitation spectroscopies, the radiative levels have been found to originate from the quasi-localized levels formed in the density-of-states tails at the band edge. The relaxation process of excited carriers at low temperatures is governed by the radiative transitions via N-N pair levels for N concentrations below 1%, and by the relaxation to nonradiative and then to quasi-localized radiative levels for the N concentrations above 1%.
3.Evolution of Band Edge with Increasing N Concentration : It has been that the band edge of GaPN alloys originates from the isolated-N levels in the host GaP crystal. The behavior of mobility edge for quasi-localized excitons has been clarified. These findings are much consistent with a theoretical calculation for the energy bands based on the tight-binding method, and suggest that the huge bowing in the composition dependence of the GaPN energy gap is an intrinsic property of GaPN as well as other related nitride alloys such as GaAsPN and InGaPN.
Competitive research funding, Grant number：06452107 - 歪導入による半導体量子ナノ構造の偏光特性の制御
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for General Scientific Research (C), Grant-in-Aid for General Scientific Research (C), 1995 - 1995
The University of Tokyo, Principal investigator
Grant amount(Total)：2500000, Direct funding：2500000
Competitive research funding, Grant number：07650005 - ガリウム砒素リン系半導体超格子構造による高効率発光素子材料の実現
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for General Scientific Research (C), Grant-in-Aid for General Scientific Research (C), 1994 - 1994
The University of Tokyo, Principal investigator
Competitive research funding, Grant number：06650005 - フォトリフレタンス分光法による間接遷移型半導体を材料とした超構造半導体の研究
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Encouragement of Young Scientists (A), Grant-in-Aid for Encouragement of Young Scientists (A), 1993 - 1993
Principal investigator
Grant amount(Total)：900000, Direct funding：900000
Competitive research funding, Grant number：05750003 - ナイトライド系化合物半導体の立方晶構造変換ヘテロエピタキシー機構の研究
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research on Priority Areas, Grant-in-Aid for Scientific Research on Priority Areas, 1992 - 1992
The University of Tokyo
Grant amount(Total)：1700000, Direct funding：1700000
Grant number：04227211 - Study on Atomic Layer Epitaxy of Wide-Gap Compound Semiconductors by Metalorganic Vapor Phase Growth
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for General Scientific Research (B), Grant-in-Aid for General Scientific Research (B), 1989 - 1991
ONABE Kentaro; YAGUCHI Hiroyuki; KONDO Takashi; FUKATSU Susumu; SHIRAKI Yasuhiro; ITO Ryoichi, The University of Tokyo
Grant amount(Total)：7400000, Direct funding：7400000
In this study, crystal growth and characterization of compound semiconductor GaAsP-related quantum wells and cubic GaN have been attemped. We have clarified the crystal growth features and the materials properties as the folowing.
1) Strained-layer quantum well structures based on the GaAs/GaAsp and GaAsP/GaP heterostructures have been grown. From photoluminescence, infrared reflectance spectroscopy and photoreflectance measurements, the band discontinuity at the heterointerfaces has been determined, showing alloy composition and strain dependences.
2) GaN has been successfully grown using dimethylhydrazine as the group V (N) element source. It has been show that the grown cubic GaN is superior in its crystal perfection. This is a realization of "structural transformation heteroepitaxy", which forms a new concept of epitaxial growth technology.
For the next steps, further improvements in the growth method, characterization of other properties and atempts for photonic device applicatios are to be carried out.
Grant number：01460071
- 光起電力素子及びその製造方法
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Patent/Registration no：特許第5841231号
J-Global ID：201603019885568991 - 光起電力素子及びその製造方法
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J-Global ID：201503010382867768 - 多孔質酸化チタン薄膜とその製造方法
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Patent/Registration no：特許第4104899号
J-Global ID：201103066300269030 - 多孔質酸化チタン薄膜とその製造方法
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J-Global ID：200903052376790857