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FUJIKAWA Sachie
| Mathematics, Electronics and Informatics Division | Assistant Professor |
| Department of Electrical Engineering,Electronics, and Applied Physics |
- E-Mail：fujikawa
mail.saitama-u.ac.jp
Researcher information
■ Field Of Study- Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electric/electronic material engineering
- Nanotechnology/Materials, Crystal engineering
- Nanotechnology/Materials, Applied materials
- Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electronic devices and equipment
- Oct. 2019 - Present
- Apr. 2013 - Present
- Apr. 2023 - Mar. 2024
- Apr. 2017 - Sep. 2019
- Apr. 2013 - Mar. 2017
- Apr. 2013 - Mar. 2017, Tokyo University of Science
- Apr. 2012 - Mar. 2013
- Apr. 2009 - Mar. 2012
- Jun. 2005 - Mar. 2009
■ Award
Performance information
■ Paper- Development of Shorter Wavelength 230 nm-Band Far-UVC LEDs and Realization of High Output Power LED Panels
Mitsuhiro Muta; Hiroyuki Oogami; Kengo Mouri; Hirokazu Kawashima; Noritoshi Maeda; Ajmal Khan; Yukio Kashima; Eriko Katsuura; Yuuki Nakamura; Kou Sumishi; Taiga Kirihara; Sachie Fujikawa; Hiroyuki Yaguchi; Yasushi Iwaisako; Hideki Hirayama
IEICE Tech. Rep, Volume：123, Number：290, First page：102, Last page：105, Nov. 2023 - Investigation of off-cut angle of sapphire for epitaxial lateral overgrowth of AlN and fabrication of high-quality AlN template
Narihito Okada; Takahiro Saito; Sachie Fujikawa; Noritoshi Maeda; Masafumi Jo; Hideki Hirayama; Kazuyuki Tadatomo
JOURNAL OF CRYSTAL GROWTH, Volume：588, Jun. 2022
Using a metal-organic vapor phase epitaxy, the epitaxial lateral overgrowth (ELO) of AlN was performed by varying a vicinal off-cut angle from 0.15 to 2.0 degrees of sapphire substrates oriented to the m-axis, i.e., the a-axis of AlN. During overgrowth, step bunching resulted in the efficient conversion of dislocations to elongated voids. The dislocations were terminated at the voids formed over the groove regions and the low and high etch pit density (EPD) regions were observed. The dislocation was reduced by increasing the off-cut angle of the sapphire substrates up to 0.8 degrees; however, low-EPD region became small in the ELO. Thus, we have attempted to achieve a longer growth of the ELO-AlN layer on the sapphire substrate with the off-cut angle of 0.15 degrees. As a result, the EPD decreased with the increasing thickness. The ELO-AlN layer with the thickness of 15.9 mu m exhibited the EPD of 2.1 x 106 cm-2 in the low dislocation region.
ELSEVIER, English, Scientific journal
DOI：https://doi.org/10.1016/j.jcrysgro.2022.126640
DOI ID：10.1016/j.jcrysgro.2022.126640, ISSN：0022-0248, eISSN：1873-5002, Web of Science ID：WOS:000800001500002 - Investigation of the growth mechanism and crystallographic structures of GaSb dots nucleation layer and GaSb thin film grown on Si(001) substrate by molecular beam epitaxy
Ryuto Machida; Ryusuke Toda; Shinsuke Hara; Issei Watanabe; Kouichi Akahane; Sachie Fujikawa; Akifumi Kasamatsu; Hiroki Fujishiro
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Volume：40, Number：3, May 2022
We investigated the growth mechanism and crystallographic structures of GaSb dots as a nucleation layer and GaSb thin films grown on a Si(001) substrate by molecular beam epitaxy using atomic force microscopy and transmission electron microscopy (TEM). The surface morphology of the 100-nm-thick GaSb with GaSb dots drastically changed from that without them. As the GaSb dots gradually grew in size, the coalescence between the adjacent dots was repeated and the space between them was filled, thereby changing the growth mode of GaSb to two-dimensional growth and forming domain structures with terrace surfaces. The high-resolution TEM images and fast Fourier transform patterns revealed that the lattice-mismatched strain in the epitaxial GaSb thin film was almost completely relieved. Because some adatoms were rotated by 60 degrees on the {111} facets and formed a monolayer with a wurtzite structure as a stacking fault in the initial growth stage, twinned GaSb with an inclination of 54.7 degrees from the (001) plane was formed in addition to epitaxial GaSb. The lattice-mismatched strain was nearly relieved in the vicinity of the GaSb/Si interface because of the multiple periodic 90 degrees and 60 degrees misfit dislocation arrays. The formation of GaSb dots, which acted as crystal nuclei and induced periodic misfit dislocation arrays, was useful for the epitaxial growth of GaSb thin films on a Si(001) substrate-a result that will be advantageous for growing high-quality GaSb thin films, with flatter and fewer crystal defects, on a Si(001) substrate in future. Published under an exclusive license by the AVS.
A V S AMER INST PHYSICS, English, Scientific journal
DOI：https://doi.org/10.1116/6.0001810
DOI ID：10.1116/6.0001810, ISSN：0734-2101, eISSN：1520-8559, Web of Science ID：WOS:000793514400003 - Impact of Mg-level on lattice-relaxation in p-AlGaN hole source layer (HSL) and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters (vol 32, 055702, 2021)
M. Ajmal Khan; Juan Paolo Bermundo; Yasuaki Ishikawa; Hiroshi Ikenoue; Sachie Fujikawa; Eriko Matsuura; Yukio Kashima; Noritoshi Maeda; Masafumi Jo; Hideki Hirayama
NANOTECHNOLOGY, Volume：32, Number：36, Sep. 2021
IOP PUBLISHING LTD, English
DOI：https://doi.org/10.1088/1361-6528/ac0664
DOI ID：10.1088/1361-6528/ac0664, ISSN：0957-4484, eISSN：1361-6528, Web of Science ID：WOS:000662686000001 - Impact of Mg level on lattice relaxation in a p-AlGaN hole source layer and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters
M. Ajmal Khan; Juan Paolo Bermundo; Yasuaki Ishikawa; Hiroshi Ikenoue; Sachie Fujikawa; Eriko Matsuura; Yukio Kashima; Noritoshi Maeda; Masafumi Jo; Hideki Hirayama
NANOTECHNOLOGY, Volume：32, Number：5, Jan. 2021
Mg-doped p-type semiconducting aluminium-gallium-nitride hole source layer (p-AlGaN HSL) materials are quite promising as a source of hole 'p' carriers for the ultraviolet-B (UVB) light-emitting diodes (LEDs) and laser diodes (LDs). However, the p-AlGaN HSL has a central issue of low hole injection due to poor activation of Mg atoms, and the presence of unwanted impurity contamination and the existence of a localized coherent state. Therefore, first the impact of the Mg level on the crystallinity, Al composition and relaxation conditions in the p-AlGaN HSL were studied. An increasing trend in the lattice-relaxation ratios with increasing Mg concentrations in the p-AlGaN HSL were observed. Ultimately, a 40%-60% relaxed and 1.4 mu m thick p-AlGaN HSL structure with total threading dislocation densities (total-TDDs) of approximately similar to 8-9 x 10(8) cm(-2) was achieved, which almost matches our previous design of a 4 mu m thick and 50% relaxed n-AlGaN electron source layer (ESL) with total-TDDs of approximately similar to 7-8 x 10(8) cm(-2). Subsequently, structurally a symmetric p-n junction for UVB emitters was accomplished. Finally, the influence of excimer laser annealing (ELA) on the activation of Mg concentration and on suppression of unwanted impurities as well as on the annihilation of the localized energy state in the p-AlGaN HSL were thoroughly investigated. ELA treatment suggested a reduced Ga-N bonding ratio and increased Ga-O, as well as Ga-Ga bonding ratios in the p-AlGaN HSL. After ELA treatment the localized coherent state was suppressed and, ultimately, the photoluminescence emission efficiency as well as conductivity were drastically improved in the p-AlGaN HSL. By using lightly polarized p-AlGaN HSL assisted by ELA treatment, quite low resistivity in p-type AlGaN HSL at room temperature (hole concentration is similar to 2.6 x 10(16) cm(-3), the hole mobility is similar to 9.6 cm(2) V-1 s(-1) and the resistivity is similar to 24.39 omega. cm) were reported. ELA treatment has great potential for localized activation of p-AlGaN HSL as well as n- and p-electrodes on n-AlGaN and p-AlGaN contact layers during the flip-chip (FC) process in low operating UVB emitters, including UVB lasers.
IOP Publishing Ltd, English, Scientific journal
DOI：https://doi.org/10.1088/1361-6528/abbddb
DOI ID：10.1088/1361-6528/abbddb, ISSN：0957-4484, eISSN：1361-6528, Web of Science ID：WOS:000588560500001 - Evaluation of GaN/AlGaN THz quantum-cascade laser epi-layers grown on AlGaN/Si templates by MOCVD
Sachie Fujikawa; Toshiya Ishiguro; Ke Wang; Wataru Terashima; Hiroki Fujishiro; Hideki Hirayama
JOURNAL OF CRYSTAL GROWTH, Volume：510, First page：47, Last page：49, Mar. 2019
GaN/AlGaN THz quantum-cascade laser (QCL) structures were grown on AlGaN/Si templates by a metal-organic chemical vapor deposition (MOCVD). We aim to fabricate a double metal waveguide (DMW) based GaN THz QCL through removing the Si substrate by wet etching. The DMW is essential for realizing low cavity loss and a very high optical confinement factor (99%). We grew 100 periods of GaN/Al0.21Ga0.79N two quantum wells (QW) type active region on Al0.08Ga0.92N/Si templates. Samples were evaluated by cross-sectional transmission-electron microscopy (TEM) and high-resolution X-ray diffraction (HR-XRD). We found that the full width at half maximum (FWHM) of the XRD satellite peaks became narrower when the growth temperature decreased, and the steepness of the QC layer hetero-interfaces has been improved.
ELSEVIER SCIENCE BV, English, Scientific journal
DOI：https://doi.org/10.1016/j.jcrysgro.2018.12.027
DOI ID：10.1016/j.jcrysgro.2018.12.027, ISSN：0022-0248, eISSN：1873-5002, Web of Science ID：WOS:000457974000009 - Milliwatt power UV-A LEDs developed by using n-AlGaN superlattice buffer layers grown on AlN templates
Takuma Matsumoto; M. Ajmal Khan; Noritoshi Maeda; Sachie Fujikawa; Norihiko Kamata; Hideki Hirayama
JOURNAL OF PHYSICS D-APPLIED PHYSICS, Volume：52, Number：11, Mar. 2019
Ultraviolet (UV)-A light-emitting diode (LED) light sources are strongly demanded for both medical and photochemical applications. In our previous report, we investigated the conventional n-AlGaN buffer layer (BL)-based UV-A LED devices and a very low output power was achieved. In this work, we aim for the suppression of vertically propagating threading dislocation densities (TDDs) in the n-AlGaN BL including the current spreading layer (CSL) by introducing Si-doped n-Al0.37Ga0.63N/n-Al0.27Ga0.73N superlattices (SLs) between the MN template and n-AlGaN BL for the demonstration of 341nm UV-A LEDs. When the conventional n-AlGaN BLs were replaced with n-AlGaN SL-based BLs (with a suitable number of periods up to similar to 70) in the UV-A multi-quantum wells, then the full width at half maximum of the x-ray rocking curves in the n-AlGaN SL for the (0002) and (10-12) planes, respectively, were reduced to 346 and 431 aresec and the total TDDs were suppressed to approximately -1 x 10(9) cm(-2). Finally, when the conventional Ni (20 tun)/Au (150mn) p-electrodes were replaced with new Ni (1 nm)/Mg (200nm) p-electrodes in the n-AlGaN SL-based UV-A LEDs, the maximum output power was improved from 2.1 to 2.5 mW.
IOP PUBLISHING LTD, English, Scientific journal
DOI：https://doi.org/10.1088/1361-6463/aaf60a
DOI ID：10.1088/1361-6463/aaf60a, ISSN：0022-3727, eISSN：1361-6463, Web of Science ID：WOS:000456064900001 - Advantage of heteroepitaxial GaSb thin-film buffer and GaSb dot nucleation layer for GaSb/AlGaSb multiple quantum well structure grown on Si(100) substrate by molecular beam epitaxy
Ryuto Machida; Kouichi Akahane; Issei Watanabe; Shinsuke Hara; Sachie Fujikawa; Akifumi Kasamatsu; Hiroki I. Fujishiro
JOURNAL OF CRYSTAL GROWTH, Volume：507, First page：357, Last page：361, Feb. 2019
We grew a GaSb/Al0.3Ga0.7Sb multiple-quantum-well (MQW) structure on a two-inch Si(1 0 0) substrate using a 100-nm-thick heteroepitaxial GaSb thin-film buffer with a nucleation layer of GaSb dots by molecular beam epitaxy (MBE) and evaluated the surface morphology and the photoluminescence (PL) and X-ray diffraction spectra of the MQW structure. The full width at half maximum of the PL spectrum of the GaSb/Al0.3Ga0.7Sb MQW structure was very narrow, although the buffer thickness was much lower than those for previously reported GaSb-based QW structures on Si(1 0 0) substrates. This indicated that the surface of the 100-nm-thick GaSb thin-film buffer was sufficiently flat to form heterostructures and MQWs. The surface roughness and crystalline quality of the GaSb buffer and MQW structure were strongly dependent on the growth temperature; high-performance devices were realized by optimizing the growth temperature. These results showed the advantage and potential applicability of the GaSb/Al0.3Ga0.7Sb MQW structure and the GaSb thin-film buffer with GaSb dots as a nucleation layer grown on Si(1 0 0) substrates.
ELSEVIER SCIENCE BV, English, Scientific journal
DOI：https://doi.org/10.1016/j.jcrysgro.2018.11.026
DOI ID：10.1016/j.jcrysgro.2018.11.026, ISSN：0022-0248, eISSN：1873-5002, Web of Science ID：WOS:000455667500059 - Surface cleaning and pure nitridation of GaSb by in-situ plasma processing
Takahiro Gotow; Sachie Fujikawa; Hiroki I. Fujishiro; Mutsuo Ogura; Wen Hsin Chang; Tetsuji Yasuda; Tatsuro Maeda
AIP ADVANCES, Volume：7, Number：10, Oct. 2017
A clean and flat GaSb surface without native oxides has been attained by H-2 plasma cleaning and subsequent in-situ N-2 plasma nitridation process at 300 degrees C. The mechanisms of thermal desorption behavior of native oxides on GaSb have been studied by thermal desorption spectroscopy (TDS) analysis. The suitable heat treatment process window for preparing a clean GaSb surface is given. Auger electron spectroscopy (AES) analysis indicates that native oxides were completely removed on the GaSb surface after H-2 plasma exposure and the pure nitridation of the clean GaSb surface was obtained at a relatively low temperature of 300 degrees C. This pure nitridation of GaSb have a possibility to be used as a passivation layer for high quality GaSb MOS devices. (C) 2017 Author(s).
AMER INST PHYSICS, English, Scientific journal
DOI：https://doi.org/10.1063/1.5002173
DOI ID：10.1063/1.5002173, ISSN：2158-3226, Web of Science ID：WOS:000414246100043 - Comparative study on noise characteristics of As and Sb-based high electron mobility transistors
Takuto Takahashi; Shota Hatsushiba; Sachie Fujikawa; Hiroki I. Fujishiro
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Volume：214, Number：3, Mar. 2017
We study comparatively the RF and the noise characteristics for the In0.7Ga0.3As, InAs/AlSb and InSb high electron mobility transistors (HEMTs) by using the quantum corrected Monte Carlo (QC-MC) simulation. The increase in the current fluctuation <
WILEY-V C H VERLAG GMBH, English, Scientific journal
DOI：https://doi.org/10.1002/pssa.201600599
DOI ID：10.1002/pssa.201600599, ISSN：1862-6300, eISSN：1862-6319, Web of Science ID：WOS:000397577000019 - Effect of low-temperature-grown GaSb layer on formation of high-density and small GaSb islands on Si(100) substrate
Ryuto Machida; Ryusuke Toda; Sachie Fujikawa; Shinsuke Hara; Issei Watanabe; Hiroki I. Fujishiro
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Volume：253, Number：4, First page：648, Last page：653, Apr. 2016
The effect of a low-temperature-grown gallium antimonide (LT-GaSb) layer on the formation of high-density GaSb islands on a Si(100) substrate was studied using ultrahigh-vacuum scanning tunneling microscopy (UHV-STM) and atomic force microscopy. By using an LT-GaSb layer in the initial growth stage (new growth method), high-density and small GaSb islands were formed at 500 degrees C regardless of the type of the reconstructed surface. The density and size of the GaSb islands with the LT-GaSb layer were estimated to be approximate to 1.0x10(11)cm(-2) and approximate to 20nm, respectively. The STM results showed that the LT-GaSb layer was composed of an Sb-rich amorphous GaSb layer. With a rapid increase in temperature under the Sb flux, the LT-GaSb layer immediately changed into GaSb nuclei with a high density (2.1x10(11)cm(-2)) and small size (11nm). It is suggested that these high-density and small GaSb islands grow from the GaSb nuclei, which act as crystal seeds.
WILEY-V C H VERLAG GMBH, English, Scientific journal
DOI：https://doi.org/10.1002/pssb.201552486
DOI ID：10.1002/pssb.201552486, ISSN：0370-1972, eISSN：1521-3951, Web of Science ID：WOS:000374142500009 - InSb-based HEMT with Over 300 GHz-f(T) using Evaporated SiOx Film
Kyousuke Isono; Daisuke Tsuji; Tatsuya Taketsuru; Sachie Fujikawa; Issei Watanabe; Yoshimi Yamashita; Akira Endoh; Shinsuke Hara; Akifumi Kasamatsu; Hiroki I. Fujishiro
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), 2016
IEEE, English, International conference proceedings
Web of Science ID：WOS:000392285400341 - Growth of GaSb Dots Nucleation Layer and Thin-Film GaSb on Si(100) Substrate by Molecular Beam Epitaxy
Ryuto Machida; Ryusuke Toda; Sachie Fujikawa; Shinsuke Hara; Issei Watanabe; Kouichi Akahane; Akifumi Kasamatsu; Hiroki I. Fujishiro
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), 2016
IEEE, English, International conference proceedings
Web of Science ID：WOS:000392285400081 - Comparative Study on Noise Characteristics of As and Sb-based HEMTs
Takuto Takahashi; Shota Hatsushiba; Sachie Fujikawa; Hiroki Inomata Fujishiro
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), 2016
IEEE, English, International conference proceedings
Web of Science ID：WOS:000392285400055 - Effects of Ga-induced reconstructed surfaces and atomic steps on the morphology of GaSb islands on Si(100)
Ryuto Machida; Ryusuke Toda; Sachie Fujikawa; Shinsuke Hara; Issei Watanabe; Hiroki I. Fujishiro
APPLIED SURFACE SCIENCE, Volume：351, First page：686, Last page：692, Oct. 2015
The effects of the Ga-induced reconstructed surface and atomic step type on the shape and morphology of GaSb islands on a Si(1 0 0) surface were studied using ultrahigh-vacuum scanning tunneling microscopy and atomic force microscopy. Though both anisotropic elongated islands and isotropic islands were formed on clean Si and Ga/Si(1 0 0)-2 x 3 substrates, isotropic islands were dominantly formed on Ga/Si(1 0 0)-2 x 2 substrates at 300 degrees C. The density and size of GaSb islands on 2 x 2-Ga at 300 degrees C were estimated to be 4.9 x 10(10) cm(-2) and 29.1 nm, respectively. The difference in the GaSb island shapes could be caused by the terrace and step of the substrate surface being changed by step rearrangement due to the deposition of Ga atoms at high temperatures. Above 350 degrees C, the density and size of islands decreased to 2.7 x 10(9) cm(-2) and increased to 62.0 nm, respectively. In the initial growth stage, scanning tunneling microscopy results revealed that a Sb/Si(1 0 0)-2 x 1 reconstructed surface was formed above 350 degrees C. The large islands were assumed to aggregate from the surface diffusion of each atom because the Sbterminated Si surface is inactive against Ga and Sb atoms. The type of the reconstructed surface is also suggested to affect the density and size of the islands. (C) 2015 Elsevier B.V. All rights reserved.
ELSEVIER SCIENCE BV, English, Scientific journal
DOI：https://doi.org/10.1016/j.apsusc.2015.05.184
DOI ID：10.1016/j.apsusc.2015.05.184, ISSN：0169-4332, eISSN：1873-5584, Web of Science ID：WOS:000359496600087 - Recent Progress in AlGaN-Based Deep-UV LEDs
Hideki Hirayama; Sachie Fujikawa; Norihiko Kamata
ELECTRONICS AND COMMUNICATIONS IN JAPAN, Volume：98, Number：5, First page：1, Last page：8, May 2015
Deep-ultraviolet (DUV) light-emitting diodes (LEDs) are in demand for a wide variety of potential applications, such as sterilization, water and air purification, medical uses, and so on. We have demonstrated 222-351 nm AlGaN and quaternary InAlGaN-based DUV-LEDs by developing a low threading dislocation density (TDD) AlN crystal. We achieved an external quantum efficiency (EQE) of about 4% and an output power greater than 30 mW in DUV-LEDs for use in sterilization applications by developing new crystal growth techniques.
WILEY-BLACKWELL, English, Scientific journal
DOI：https://doi.org/10.1002/ecj.11667
DOI ID：10.1002/ecj.11667, ISSN：1942-9533, eISSN：1942-9541, Web of Science ID：WOS:000352638300001 - Effects of HCI treatment and predeposition vacuum annealing on Al2O3/GaSb/GaAs metal-oxide-semiconductor structures
Takahiro Gotow; Sachie Fujikawa; Hiroki I. Fujishiro; Mutsuo Ogura; Tetsuji Yasuda; Tatsuro Maeda
JAPANESE JOURNAL OF APPLIED PHYSICS, Volume：54, Number：2, Feb. 2015
The effects of HCI treatment and predeposition vacuum annealing (VA) on n-type GaSb/GaAs metal-oxide-semiconductor (MOS) structures with the atomic layer deposition (ALD) of Al2O3 dielectrics are studied. We obtained MOS structures with good Fermi level modulation by HCI treatment prior to the deposition of Al2O3. From X-ray photoelectron spectroscopy (XPS) analysis, we found that the Ga2O3 content increases during the Al2O3 deposition, whereas the amounts of Sb components are reduced. The excess growth of Ga2O3 is inhibited by the reductions in the amounts of Sb components by the HCI treatment. Further reductions in the amounts of Sb components are observed following predeposition VA, indicating a lower density of states (DO. However, the frequency dispersion in the capacitance voltage (C-V) characteristics increases with predeposition VA at higher temperatures. (C) 2015 The Japan Society of Applied Physics
IOP PUBLISHING LTD, English, Scientific journal
DOI：https://doi.org/10.7567/JJAP.54.021201
DOI ID：10.7567/JJAP.54.021201, ISSN：0021-4922, eISSN：1347-4065, Web of Science ID：WOS:000350091000003 - Electron transport characteristics of strain reduced InSb QW structure with AlInSb stepped buffer layer
竹鶴達哉; 藤川紗千恵; 原田義彬; 鈴木浩基; 磯野恭佑; 加藤三四郎; 辻大介; 藤代博記
電子情報通信学会技術研究報告, Volume：115, Number：156(ED2015 36-46), First page：45, Last page：49, 2015
Japanese
ISSN：0913-5685, J-Global ID：201502215755603232, CiNii Articles ID：40020559934, CiNii Books ID：AA1123312X - Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes
Hideki Hirayama; Noritoshi Maeda; Sachie Fujikawa; Shiro Toyoda; Norihiko Kamata
JAPANESE JOURNAL OF APPLIED PHYSICS, Volume：53, Number：10, Oct. 2014
In this paper, recent advances in AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) are demonstrated. 220-350-nm-band DUV LEDs have been realized by developing crystal growth techniques for wide-bandgap AlN and AlGaN semiconductors. Significant increases in internal quantum efficiency (IQE) have been achieved for AlGaN DUV emissions by developing low-threading-dislocation-density (TDD) AlN buffer layers grown on sapphire substrates. The electron injection efficiency (EIE) of the LEDs was also significantly increased by introducing a multiquantum barrier (MQB). We also discuss light extraction efficiency (LEE), which is the most important parameter for achieving high-efficiency DUV LEDs. We succeeded in improving LEE by developing a transparent p-AlGaN contact layer. The maximum external quantum efficiency (EQE) obtained was 7% for a 279 nm DUV LED. EQE could be increased by up to several tens of percent through the improvement of LEE by utilizing transparent contact layers and photonic nanostructures in the near future. (C) 2014 The Japan Society of Applied Physics
IOP PUBLISHING LTD, English, Scientific journal
DOI：https://doi.org/10.7567/JJAP.53.100209
DOI ID：10.7567/JJAP.53.100209, ISSN：0021-4922, eISSN：1347-4065, Web of Science ID：WOS:000343212100011 - Analysis of Mechanisms of Delay Time Generation in III-V DG MOSFETS
矢島悠貴; 大濱諒子; 藤川紗千恵; 藤代博記
電子情報通信学会技術研究報告, Volume：114, Number：168(ED2014 53-61), 2014
ISSN：0913-5685, J-Global ID：201402254687160391 - Analysis of effects of dislocation scattering on device characteristics of InSb HEMT
初芝正太; 長井彰平; 藤川紗千恵; 原紳介; 遠藤聡; 渡邊一世; 笠松章史; 藤代博記
電子情報通信学会技術研究報告, Volume：114, Number：168(ED2014 53-61), 2014
ISSN：0913-5685, J-Global ID：201402284770844924 - Effect of Vacuum Annealing on Al2O3/GaSb MOS Interfaces
後藤高寛; 後藤高寛; 藤川紗千恵; 藤代博記; 小倉睦郎; 安田哲二; 前田辰郎; 前田辰郎
電子情報通信学会技術研究報告, Volume：113, Number：176(ED2013 37-49), 2013
ISSN：0913-5685, J-Global ID：201302233341815885 - Recent Progress of AlGaN-based Deep-UV LEDs
平山秀樹; 藤川紗千恵; 鎌田憲彦
電気学会論文誌 C, Volume：133, Number：8, First page：1443, Last page：1448, 2013
Deep-ultraviolet (DUV) light-emitting diodes (LEDs) are demanded for a wide variety of potential applications, such as sterilization, water and air purification, medical use, and so on. We have demonstrated 222-351nm AlGaN and quaternary InAlGaN-based DUV-LEDs by developing a low threading dislocation density (TDD) AlN crystal. We achieved an external quantum efficiency (EQE) of about 4% and an output power more than 30mW in DUV-LEDs for use in sterilization applications by developing new crystal growth techniques.
The Institute of Electrical Engineers of Japan, Japanese
DOI：https://doi.org/10.1541/ieejeiss.133.1443
DOI ID：10.1541/ieejeiss.133.1443, ISSN：0385-4221, eISSN：1348-8155, J-Global ID：201302264842618349, CiNii Articles ID：10031189032, CiNii Books ID：AN10065950 - Comparative study on nano-scale III-V double-gate MOSFETs with various channel materials
Akio Nishida; Kei Hasegawa; Ryoko Ohama; Sachie Fujikawa; Shinsuke Hara; Hiroki I. Fujishiro
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11, Volume：10, Number：11, First page：1413, Last page：1416, 2013
The current drivability of III-V double gate MOSFETs with various channel materials are investigated by using quantum-corrected Monte Carlo simulation. The InGaAs channel shows the largest electron injection velocity v(inj). However, the backward currents by alloy scattering (AL) in the channel and by non-polar optical phonon scattering (NPOP) in the drain decrease the average electron velocity v(s) from v(inj) even at L-g of 10 nm. In the GaAs channel, in addition to the decrease in v(inj) by the L valleys conduction, NPOP and polar optical phonon scattering (POP) cause the backward currents, which decrease v(s) further from v(inj). The InP channel shows the smallest v(inj), however, the backward current by POP in the channel is small and that by NPOP in the drain is almost negligible. Therefore vs is almost reaching v(inj) at L-g of 10 nm. On the other hand, the electron density n(b) is largest in the InP channel owing to the large C-gs(.) Eventually, the InP channel shows the largest I-ds. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
WILEY-V C H VERLAG GMBH, English, International conference proceedings
DOI：https://doi.org/10.1002/pssc.201300264
DOI ID：10.1002/pssc.201300264, ISSN：1862-6351, Web of Science ID：WOS:000334583400016 - Approaches for improving efficiency of AlGaN-based deep-UV LEDs
富田優志; 平山秀樹; 藤川紗千恵; 水澤克哉; 豊田史朗; 鎌田憲彦
電子情報通信学会技術研究報告, Volume：112, Number：327(ED2012 65-92), 2012
ISSN：0913-5685, J-Global ID：201302222267092343 - High-efficiency AlGaN deep-UV LEDs fabricated on a- and m-axis oriented c-plane sapphire substrates
Sachie Fujikawa; Hideki Hirayama; Noritoshi Maeda
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, Volume：9, Number：3-4, First page：790, Last page：793, 2012
We demonstrated high-efficiency 270 nm-band AlGaN deep-ultraviolet (DUV) light-emitting diodes (LEDs) fabricated on 0.15 off a-and m-axis oriented c-plane (0001) sapphire substrates grown by low-pressure metal organic chemical-vapor deposition (LP-MOCVD). An approximately 4.5 mu m-thick low threading dislocation density (TDD) AlN template was grown on the sapphire substrate by using an NH3 pulsed-flow multilayer (ML) growth method. We found that atomically flat surface can be easily obtained for AlN layer grown on a-axis oriented sample. On the other hand, a step-bunching was observed for the surface of AlN layer grown on m-axis oriented sample. We found, from these results, that a-axis oriented (0001) sapphire is more suitable for obtaining a flat sur-face in AlN template without step-bunching. We also found that shorter wavelength LED can be obtained by using an a-axis oriented (0001) sapphire, because an Al incorporation in AlGaN is slightly high for the growth on a-axis oriented (0001) sapphire. We achieved highefficiency AlGaN quantum well (QW) DUV LEDs on AlN templates grown on both a- and m-axis oriented sapphire substrates. The peak wavelengths of the LEDs fabricated on a- and m-axis oriented sapphire were 270 and 277 nm, respectively. The maximum external quantum efficiencies (EQEs) of the LEDs fabricated on a- and m-axis oriented sapphire were 3.8 and 3.2%, respectively, measured under room temperature (RT) continuous wave (CW) operations. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
WILEY-V C H VERLAG GMBH, English, International conference proceedings
DOI：https://doi.org/10.1002/pssc.201100453
DOI ID：10.1002/pssc.201100453, ISSN：1862-6351, Web of Science ID：WOS:000306521600093 - 284-300 nm Quaternary InAlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Si(111) Substrates
Sachie Fujikawa; Hideki Hirayama
APPLIED PHYSICS EXPRESS, Volume：4, Number：6, Jun. 2011
We have demonstrated 280-300-nm-band quaternary InAlGaN based deep-ultraviolet (DUV) light-emitting diodes (LEDs) fabricated on Si(111) substrates, grown by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). An ammonia pulsed-flow growth method was used in the initial stages of AlN growth on Si substrates in order to achieve low threading dislocation densities with thin AlN layer. We obtained single-peaked spectra from the DUV LEDs at wavelengths between 284 and 300 nm under room temperature continuous-wave (cw) operation. It is expected that low-cost and large-size DUV LEDs could become available in the near future by increasing light-extraction by removing the Si substrate. (C) 2011 The Japan Society of Applied Physics
JAPAN SOC APPLIED PHYSICS, English, Scientific journal
DOI：https://doi.org/10.1143/APEX.4.061002
DOI ID：10.1143/APEX.4.061002, ISSN：1882-0778, Web of Science ID：WOS:000291479300002 - Chracteristics of AlN crystal growth depending on m- and a-axis oriented off-angle of c-sapphire substrate and fabrication of high-efficiency AlGaN deep-UV LEDs
前田哲利; 藤川紗千恵; 平山秀樹
電子情報通信学会技術研究報告, Volume：111, Number：292(LQE2011 96-122), First page：107, Last page：112, 2011, [Reviewed]
Japanese
ISSN：0913-5685, J-Global ID：201202264236980728, CiNii Articles ID：10031103582, CiNii Books ID：AA1123312X - First Achievement of Deep-UV LED on Si substrate
Sachie Fujikawa; Hideki Hirayama
22ND IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, First page：21, Last page：22, 2010
IEEE, English, International conference proceedings
Web of Science ID：WOS:000287413100011 - 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire
Hideki Hirayama; Sachie Fujikawa; Norimichi Noguchi; Jun Norimatsu; Takayoshi Takano; Kenji Tsubaki; Norihiko Kamata
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Volume：206, Number：6, First page：1176, Last page：1182, Jun. 2009
We demonstrate 222-282 nm AlGaN and InAlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) fabricated on low threading dislocation density (TDD) AlN template. Low TDD AlN templates were realized by using ammonia (NH3) pulse-flow multilayer (ML) growth technique. The edge- and screw-type dislocation densities of AlN layer were reduced to 7.5 x 10(8) and 3.8 x 10(7), respectively. Single-peaked electroluminescence (EL) were obtained for 222-273 nm AlGaN multi quantum well (MQW) DUV-LEDs. We obtained the maximum output power of 1.1 mW and 4.0 mW for the AlGaN-QW LEDs with wavelengths of 241 nm, 256 nm, respectively, under room temperature (RT) CW operations. The maximum output power of 227 nm and 222 nm AlGaN-QW were 0.15 mW and 0.014 mW, respectively, under RT pulsed operation. The maximum external quantum efficiency (EQE) of the 227 nm and 250 nm AlGaN LEDs were 0.2% and 0.43%, respectively. We also fabricated 280 nm band quaternary InAlGaN-MQW DUV-LEDs with n-type and p-type InAlGaN layers on ML-AlN templates. We demonstrated extremely high internal quantum efficiency (IQE) of 284 nm InAlGaN-QW emission, which was confirmed by the fact that the ratio of the integrated intensity of the RT-PL against the 77 K-PL was 86%. The maximum output power and EQE of the 282 mn InAlGaN LED were 10.6 mW and 1.2%, respectively, under RT CW operation. (C) 2009 WILEY-VCH Veriag GmbH & Co. KGaA, Weinheim
WILEY-V C H VERLAG GMBH, English, Scientific journal
DOI：https://doi.org/10.1002/pssa.200880961
DOI ID：10.1002/pssa.200880961, ISSN：1862-6300, eISSN：1862-6319, Web of Science ID：WOS:000267527800012 - Extremely high efficiency 280 nm-band emission from quaternary InAlGaN quantum wells realized by controlling Si-doped layers
Sachie Fujikawa; Hideki Hirayama; Takayoshi Takano; Kenji Tsubaki
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, Volume：6, First page：S784, Last page：S787, 2009
Quaternary InAlGaN alloys are attracting much attention as candidate materials for realizing deep ultraviolet (DUV) light-emitting diodes (LEDs). In this study, we investigated the effect of Si-doping in the quaternary InAlGaN quantum well (QW) emitting region for obtaining a high efficiency DUV emission. Quaternary InAlGaN multi (M)-QWs with Si-doped InAlGaN buffer and barrier layers were grown on sapphire (0001) / AlN / AlGaN template by low-pressure metal-organic chemical-vapor deposition (LP-MOCVD). We found that the surface roughness of InAlGaN layer was significantly improved by introducing the light-doping of Si. The oxygen impurity concentration in the quaternary InAlGaN layer was significantly reduced by the small amount of Si-doping. We also revealed that the emission efficiency of the InAlGaN QW was markedly improved by inserting thin (3-nm-thick) undoped InAlGaN interlayer between n-AlGaN buffer and n-InAlGaN layers. At last, we demonstrated extremely high intensity PL emission from 280 nm-band InAlGaN QWs at room temperature (RT). The ratio of the integrated intensity of the RT-PL against the 77 K-PL was 86%. This result suggests that the internal quantum efficiency (IQE) of the InAlGaN-QW is considerably high. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
WILEY-V C H VERLAG GMBH, English, International conference proceedings
DOI：https://doi.org/10.1002/pssc.200880955
DOI ID：10.1002/pssc.200880955, ISSN：1862-6351, Web of Science ID：WOS:000294494400124 - 222-282 nm AlGaN and InAlGaN based deep-UV LEDs fabricated on high-quality AlN template
Hideki Hirayama; Norimichi Noguchi; Sachie Fujikawa; Jun Norimatsu; Norihiko Kamata; Takayoshi Takano; Kenji Tsubaki
GALLIUM NITRIDE MATERIALS AND DEVICES IV, Volume：7216, 2009
We demonstrate 222-282 nm AlGaN and InAlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) fabricated on low threading dislocation density (TDD) AlN template. Low TDD AlN templates were realized by using ammonia (NH3) pulse-flow multilayer (ML) growth technique. The edge-and screw-type dislocation densities of AlN layer were reduced to 7.5x10(8) and 3.8x10(7), respectively. We obtained significant increase of an AlGaN quantum well (QW) emission (by more than 50 times) by fabricating them on a low TDD ML-AlN template. We fabricated AlGaN multi (M) QW DUV-LEDs with emission range of 222-273 nm on ML-AlN templates. Single-peaked electroluminescence (EL) was obtained for AlGaN DUV-LEDs. We obtained the maximum output power of 1.1, 2.4 and 3.3 mW for the AlGaN LEDs with wavelengths of 241, 253 and 273 nm, respectively, under RT CW operation. The maximum output power of 227 and 222 nm AlGaN-QW were 0.15mW and 0.014mW, respectively, under RT pulsed operation. The maximum external quantum efficiency (EQE) of the 227 and 250 nm AlGaN LEDs were 0.2% and 0.43 %, respectively. We also fabricated 280 nm-band quaternary InAlGaN-MQW DUV-LEDs with p-type InAlGaN layers on low TDD ML-AlN templates. We obtained significant increase of photoluminescence (PL) intensity by introducing Si-doped InAlGaN buffer and barrier layers and undoped InAlGaN interlayer. We then demonstrated high internal quantum efficiency (IQE) of 284 nm InAlGaN-QW emission, which was confirmed by the fact that the ratio of the integrated intensity of the RT-PL against the 77K-PL was 86%. The maximum output power and EQE of the 282 nm InAlGaN LED were 10.6 mW and 1.2%, respectively, under RT CW operation.
SPIE-INT SOC OPTICAL ENGINEERING, English, International conference proceedings
DOI：https://doi.org/10.1117/12.809729
DOI ID：10.1117/12.809729, ISSN：0277-786X, eISSN：1996-756X, Web of Science ID：WOS:000285752800032 - Fabrication of a low threading dislocation density ELO-AlN template for application to deep-UV LEDs
Hideki Hirayama; Sachie Fujikawa; Jun Norimatsu; Takayoshi Takano; Kenji Tsubaki; Norihiko Kamata
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, Volume：6, First page：S356, Last page：S359, 2009
We have fabricated low threading dislocation density (TDD) AlN templates on sapphire substrates for application to deep-ultraviolet (DUV) light-emitting diodes (LEDs) by employing an epitaxial lateral overgrowth (ELO) process. An AlN stripe structure with a width of 5 mu m and a spacing of 3 mu m was formed by using inductive coupled plasma (ICP) etching. The AlN stripes were completely coalesced and embedded to create a flat surface after the growth of an approximately 15 mu m-thick ELO-AlN layer, grown by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). We systematically investigated the appropriate V/III ratio and growth temperature for the ELO-AlN. The edge-type TDD of the AlN was reduced from 2x10(9) cm(-2) (AlN stripe region) to 3x10(8) cm(-2) (in the wing region of the ELO-AlN), as estimated by cross-sectional transmission electron microscope (TEM) imaging. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
WILEY-V C H VERLAG GMBH, English, International conference proceedings
DOI：https://doi.org/10.1002/pssc.200880958
DOI ID：10.1002/pssc.200880958, ISSN：1862-6351, Web of Science ID：WOS:000294494400017 - Milliwatt power 270 nm-band AlGaN deep-UV LEDs fabricated on ELO-AlN templates
Hideki Hirayama; Jun Norimatsu; Norimichi Noguchi; Sachie Fujikawa; Takayoshi Takano; Kenji Tsubaki; Norihiko Kamata
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, Volume：6, First page：S474, Last page：S477, 2009
We demonstrated CW milliwatt power operations of 270 nm-band AlGaN multi-quantum well (MQW) deep-ultraviolet (DUV) light-emitting diodes (LEDs) fabricated on epitaxial lateral overgrowth (ELO) AlN templates on sapphire. An initial AlN stripe layer was grown directly on sapphire by using ammonia (NH3) pulse-flow multilayer (ML) growth method. An AlN stripe structure with a width of 5 mu m and a spacing of 3 mu m was completely coalesced after the growth of an approximately 15 mu m-thick ELO-AlN layer grown by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). The edge-type threading dislocation density (TDD) of the wing region of the ELO-AlN layer was 3x10(8) cm(-2), as observed by cross-sectional transmission electron microscope (TEM) image. The maximum output power of 2.7 mW was obtained from an AlGaN MQW LED with emission wavelength at 273 nm fabricated on ELO-AlN template under room temperature (RT) CW operation. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
WILEY-V C H VERLAG GMBH, English, International conference proceedings
DOI：https://doi.org/10.1002/pssc.200880959
DOI ID：10.1002/pssc.200880959, ISSN：1862-6351, Web of Science ID：WOS:000294494400047 - Realization of 270 nm band AlGaN based UV-LEDs on large area AlN templates with high crystalline quality
Takayoshi Takano; Hideki Hirayama; Sachie Fujikawa; Kenji Tsubaki
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, Volume：6, First page：S462, Last page：S465, 2009
Semiconductor light-emitting diodes (LEDs) with emission wavelengths in the range 250-350nm have a wide range of potential applications. So far, high power AlGaN- and InAlGaN-based LEDs in the ultraviolet (UV) region have been fabricated. However, for the realization of commercially-available low-cost UV-LEDs, the fabrication of structures on large-sized or multiple wafers is desirable. We have now demonstrated the growth of AlN templates using an ammonia (NH(3)) pulsed-flow multilayer (ML) growth technique and AlGaN based UV-LEDs on (0001) sapphire substrates by low-pressure metalorganic chemical vapour deposition (MOCVD) in a 2 '' x 3 reactor system. In the case of the (1012) X-ray rocking curve (XRC), the full-width-at-half-maximum (FWHM) increased from 510 arcsec to 580 arcsec when scanning from the center to the edge of the wafer. On the other hand, the FWHM of the (0002) XRC was slightly increased from 170 arcsec to 190 arcsec. Furthermore, Emission peaks for UV-LEDs were clearly observed in the range from 268 nm to 284 nm. The output power at 100 mA and maximum output power were 0.2 mW and 0.3 mW, respectively. These results indicate that sub-milliwatt operation in the deep-UV range was successfully achieved. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
WILEY-V C H VERLAG GMBH, English, International conference proceedings
DOI：https://doi.org/10.1002/pssc.200880929
DOI ID：10.1002/pssc.200880929, ISSN：1862-6351, Web of Science ID：WOS:000294494400044 - Realization of 340-nm-band high-output-power (> 7 mW) InAlGaN quantum well ultraviolet light-emitting diode with p-type InAlGaN
Sachie Fujikawa; Takayoshi Takano; Yukihiro Kondo; Hideki Hirayama
JAPANESE JOURNAL OF APPLIED PHYSICS, Volume：47, Number：4, First page：2941, Last page：2944, Apr. 2008
We have demonstrated 340-nm-band high-output-power InAlGaN quantum well (QW) ultraviolet (UV) light-emitting diodes (LEDs) under room temperature (RT) continuous wave (CW) operation, which were deposited on sapphire (0001) substrates by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). The high-output-power UV LEDs were achieved by introducing p-type InAlGaN layers in order to obtain a high hole concentration and by optimizing the band lineup to suppress electron overflow. The output power of a UV-LED with p-InAlGaN layers was about 4.7 times larger than that of an equivalent structure containing p-AlGaN. We obtained a significant increase in output power by controlling the barrier height of the electron-blocking layer (EBL) and the depth of the quantum wells. We also obtained a marked increase in UV output power by introducing a low-threading-dislocation-density (TDD) AIN buffer layer. The maximum output power and external quantum efficiency (EQE) of LEDs containing p-InAlGaN layers were 8.4 mW and 0.9%, respectively, at an emission wavelength of 346 nm under room temperature (RT) CW operation.
IOP PUBLISHING LTD, English, Scientific journal
DOI：https://doi.org/10.1143/JJAP.47.2941
DOI ID：10.1143/JJAP.47.2941, ISSN：0021-4922, eISSN：1347-4065, Web of Science ID：WOS:000255449100133 - 270 nm-band AlGaN deep-UV LEDs fabricated on ELO-AlN templates
乗松潤; 乗松潤; 乗松潤; 平山秀樹; 平山秀樹; 平山秀樹; 藤川紗千恵; 藤川紗千恵; 藤川紗千恵; 野口憲路; 野口憲路; 野口憲路; 高野隆好; 高野隆好; 椿健治; 椿健治; 鎌田憲彦; 鎌田憲彦
電子情報通信学会技術研究報告, Volume：108, Number：321(ED2008 152-183), 2008
ISSN：0913-5685, J-Global ID：200902227936433673 - Realization of 340nm-band high-power UV-LED using P-type Inalgan
Sachie Fujikawa; Takayoshi Takano; Yukihiro Kondo; Hideki Hirayama
Journal of Light and Visual Environment, Volume：32, Number：2, First page：83, Last page：87, 2008, [Reviewed]
High output power 340 nm-band InAlGaN-based multi-quantum-well (MQW) ultraviolet (JV) light-emitting diodes (LEDs) were achieved by using p-type InAlGaN layers. The output power a UV-LED with p-type InAlGaN layers was approximately 4.7 times larger than that achieved with p-type AlGaN layers. We obtained an output power of 8.4mW from a 346 nm InAlGaN-QW LED by optimizinq the band line-up to suppress electron overflow and by reducing the threading dislocations density (TDD) of the AlN/A/GaN template.
English, Scientific journal
DOI：https://doi.org/10.2150/jlve.32.83
DOI ID：10.2150/jlve.32.83, ISSN：0387-8805, J-Global ID：200902285903461922, SCOPUS ID：58549083605 - Realization of 340 nm-band high-power InAlGaN-based ultraviolet light-emitting diodes by the suppression of electron overflow
Sachie Fujikawa; Takayoshi Takano; Yukihiro Kondo; Hideki Hirayama
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, Volume：5, Number：6, First page：2260, Last page：+, 2008
(In)AlGaN alloys are attracting much attention as candidate materials for realizing deep ultraviolet (UV) light-emitting diodes (LEDs). In this study we demonstrated high-power CW operations of 340 nm-band InAlGaN-based UV-LEDs by suppressing electron overflow using optimized electron injection structures. LED layer structure consisting of quaternary InAlGaN quantum wells (QWs), Mg-doped InAlGaN electron blocking layer (EBL) and Mg-doped InAlGaN p-type layers was grown on sapphire/AIN/AlGaN template by low-pressure metal-organic chemical-vapor deposition (LP-MOCVD). The output power was dramatically improved by increasing the potential barrier height of EBL, Furthermore, the output power was improved by increasing the depth of the quantum well. These tendencies agree well with the theoretical analysis calculated by a device simulator. The maximum output power was 8.4 mW under room temperature (RT) CW operation with peak emission wavelength at 346 am. These results indicate that the suppression of electron overflow is quite important for the realization of high-efficiency (In)AlGaN-based UV-LEDs. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
WILEY-V C H VERLAG GMBH, English, International conference proceedings
DOI：https://doi.org/10.1002/pssc.200778666
DOI ID：10.1002/pssc.200778666, ISSN：1862-6351, Web of Science ID：WOS:000256695700241 - 340 nm-band high-power InAlGaN quantum well ultraviolet light-emitting diode using p-type InAlGaN layers
Sachie Fujikawa; Takayoshi Takano; Yukihiro Kondo; Hideki Hirayama
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, Volume：5, Number：6, First page：2280, Last page：+, 2008
In order to achieve high-efficiency ultraviolet (UV) light-emitting diodes (LEDs), p-type layers with sufficient bole concentration is quite important to suppress the electron overflow. We introduced Mg-doped InAlGaN for p-type layers of the UV-LEDs for the purpose of obtaining higher hole concentration, and achieved high power CW operations of the UV-LEDs. 340 nm-band InAlGaN-based multi-quantum-well (MQWs) UV-LEDs with Mg-doped InAlGaN electron-blocking layer (EBL) and Mg-doped InAlGaN layers were grown on sapphire substrates by metal-organic chemical vapor deposition (MOCVD), The output power of UV-LED with p-InAlGaN layers was approximately 4.7 times larger than that with p-AlGaN layers, Maximum output power and the external quantum efficiency (EQE) of the LED with p-InAlGaN layers were 8.4 mW and 0.9 %, respectively, at emission wavelength of 346 nm under room temperature (RT) CW operation, From these results, p-InAlGaN is shown to be useful for the realization of high-efficiency UV-LEDs. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
WILEY-V C H VERLAG GMBH, English, International conference proceedings
DOI：https://doi.org/10.1002/pssc.200778687
DOI ID：10.1002/pssc.200778687, ISSN：1862-6351, Web of Science ID：WOS:000256695700247 - Quaternary InAlGaN quantum-dot ultraviolet light-emitting diode emitting at 335 nm fabricated by anti-surfactant method
Hideki Hirayama; Sachie Fujikawa
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, Volume：5, Number：6, First page：2312, Last page：2315, 2008
In order to realize high-efficiency ultraviolet (UV) light-emitting diodes (LEDs) or low threshold current UV laser diodes (LDs), group-III nitride quantum dots (QDS) are very attractive. We fabricated quaternary InAlGaN quantum dots (QDs) using an anti-surfactant method. The InAlGaN-QDS were grown by low-pressure metal-organic chemical-vapor deposition (MOCVD) on an InAlGaN buffer surface treated by a silicon I anti-surfactant. The lateral size and height of the self-assemble InAlGaN. QDs were 8-18 nm and 5-8 nm respectively as observed by the atomic force microscope (AFM). We observed intense photoluminescance (PL) from the InAlGaN QDs at room temperature (RT). We also fabricated an InAlGaN-QD UV-LED on a high-quality AlN/AlGaN buffer template grown on a sapphire substrate. We obtained current injection emission of the InAlGaN-QD lJV-LED with the wavelength of 335nm under RT CW operation.
WILEY-V C H VERLAG GMBH, English, International conference proceedings
DOI：https://doi.org/10.1002/pssc.200778732
DOI ID：10.1002/pssc.200778732, ISSN：1610-1634, Web of Science ID：WOS:000256695700257
- サファイア基板上220~230nm far-UVC LEDの進展—Recent Progress of 230 nm AlGaN far-UVC LED on sapphire substrate—特集 深紫外光デバイスの進展とその応用
平山 秀樹; Ajmal Muhammad Khan; 鹿嶋 行雄; 松浦 恵理子; 前田 哲利; 牟田 実広; 大神 裕之; 毛利 健吾; 河島 宏和; 祝迫 恭; 藤川 紗千恵; 矢口 裕之
Volume：43, Number：5, First page：76, Last page：81, May 2024
Japanese
ISSN：0286-9659, CiNii Books ID：AN00360965 - Recent Progress of 230 nm AlGaN far-UVC LED on sapphire substrate
平山秀樹; KHAN Ajmal Muhammad; 鹿嶋行雄; 松浦恵理子; 前田哲利; 牟田実広; 大神裕之; 毛利健吾; 河島宏和; 祝迫恭; 藤川紗千恵; 矢口裕之
Optronics, Number：509, 2024
ISSN：0286-9659, J-Global ID：202402241195880802 - 輝きと魅力を増す最近の光源 生体無害ウイルス不活化を目指した230nm帯高出力far-UVC LEDの進展
平山秀樹; KHAN Ajmal Muhammad; 鹿嶋行雄; 松浦恵理子; 前田哲利; 牟田実広; 大神裕之; 祝迫恭; 藤川紗千恵; 矢口裕之
Volume：35, Number：7, First page：1, Last page：7, 2024
Japanese
ISSN：0917-026X, J-Global ID：202402249015186556, CiNii Books ID：AA11758790 - Study on the Binding Energy of Biexcitons Localized at Isoelectronic Traps in Nitrogen δ-Doped GaAs
矢野裕子; 高宮健吾; 藤川沙千恵; 八木修平; 矢口裕之; 小林真隆; 秋山英文
応用物理学会春季学術講演会講演予稿集(CD-ROM), Volume：70th, 2023
ISSN：2436-7613, J-Global ID：202302286333664872 - Dependence of emission efficiency of 230 nm AlGaN far-UVC LED on quantum well structure
永田裕弥; 永田裕弥; 仲元寺郁弥; 仲元寺郁弥; 前田哲利; 藤川紗千恵; 藤川紗千恵; 矢口裕之; 祝迫恭; 平山秀樹
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：84th, 2023
ISSN：2758-4704, J-Global ID：202402213347263220 - Realization of EQE 0.008 % operation in 221.5 nm far-UVC AlGaN LED
中村勇稀; 中村勇稀; 住司光; 住司光; 藤川紗千恵; 藤川紗千恵; 矢口裕之; 遠藤聡; 藤代博記; 祝迫恭; 平山秀樹
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：84th, 2023
ISSN：2758-4704, J-Global ID：202402227511994383 - Investigation of growth conditions of InSb1-xNx thin films by DC sputtering method
藤川紗千恵; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：84th, 2023
ISSN：2758-4704, J-Global ID：202402259309406796 - Development of Shorter Wavelength 230 nm-Band Far-UVC LEDs and Realization of High Output Power LED Panels
牟田実広; 大神裕之; 毛利健吾; 河島宏和; 前田哲利; KHAN Ajmal; 鹿嶋行雄; 松浦恵里子; 中村祐樹; 住司光; 桐原大河; 藤川紗千恵; 矢口裕之; 祝迫恭; 平山秀樹
電子情報通信学会技術研究報告(Web), Volume：123, Number：288(ED2023 14-37), 2023
ISSN：2432-6380, J-Global ID：202402226864927084 - Electronic structure analysis of InSb1-xNx alloys by first-principles calculation
藤川紗千恵; 藤原彬嵩; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：83rd, 2022
ISSN：2758-4704, J-Global ID：202302211602775956 - Epitaxial lateral overgrowth of AlN on vicinal sapphire substrate
Saito Takahiro; Nakamura Ryouta; Fuzikawa Sachie; Kim Fijun; Maeda Tetutoshi; Okada Narihito; Hirayama Hideki; Tadatomo Kazuyuki
JSAP Annual Meetings Extended Abstracts, Volume：2019.2, First page：3557, Last page：3557, 04 Sep. 2019
The Japan Society of Applied Physics, Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2019.2.0_3557
DOI ID：10.11470/jsapmeeting.2019.2.0_3557, ISSN：2758-4704, eISSN：2436-7613, J-Global ID：201902247784326256 - Improvement of output power of 250 nm AlGaN UVC-LED by optimizing electron-blocking layer
Nakamura Reiji; Fujikawa Sachi; Maeda Noritoshi; Endo Satoshi; Fujishiro Hiroki; Hirayama Hideki
JSAP Annual Meetings Extended Abstracts, Volume：2019.2, First page：3282, Last page：3282, 04 Sep. 2019
The Japan Society of Applied Physics, Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2019.2.0_3282
DOI ID：10.11470/jsapmeeting.2019.2.0_3282, ISSN：2758-4704, eISSN：2436-7613, J-Global ID：201902280190759466 - The influence of both Mg-concentration and excimer laser annealing (ELA) on p-AlGaN cladding layer for the application of AlGaN-based UVB Laser Diodes
KHAN M. Ajmal; BERMUNDO Juan Paolo; ISHIKAWA Yasuaki; IKENOUE Hiroshi; FUJIKAWA Sachie; MAEDA Noritoshi; JO Masafumi; HIRAYAMA Hideki
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：80th, 2019
ISSN：2758-4704, J-Global ID：201902241960379540 - Development of 240 nm-band high output power AlGaN UVC LED
Ishiguro Toshiya; Nakamura Reiji; Fujikawa Sachie; Maeda Noritoshi; Machida Ryuto; Fujishiro Hiroki; Hirayama Hideki
JSAP Annual Meetings Extended Abstracts, Volume：2018.2, First page：3337, Last page：3337, 05 Sep. 2018
The Japan Society of Applied Physics, Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2018.2.0_3337
DOI ID：10.11470/jsapmeeting.2018.2.0_3337, ISSN：2758-4704, eISSN：2436-7613, J-Global ID：201802263821409098 - 選択横方向成長による高品質AlNのストライプ方位依存性
斉藤貴大; KIM F.; 藤川紗千恵; 前田哲利; 岡田成仁; 平山秀樹; 只友一行
Volume：2018, 2018
J-Global ID：201902284056145360 - AlNの選択横方向成長におけるストライプ方位依存性
KIM F.; 斉藤貴大; 藤川紗知恵; 前田哲利; 岡田成仁; 平山秀樹; 只友一行
Volume：79th, 2018
ISSN：2758-4704, J-Global ID：201802274876637183 - GaN系QCL実現に向けたSi基板上GaN/AlGaN超格子構造の作製
藤川紗千恵; 藤川紗千恵; 石黒稔也; 王科; 藤代博記; 平山秀樹
2018
J-Global ID：201902221302491292 - Effect of Low Temperature Grown InSb on InSb Thin Film on GaAs Substrate
Watanabe Yusuke; Shiino Kyota; Ito Takami; Suzuki Hiroki; Fujikawa Sachie; Machida Ryuto; Fujishiro Hiroki
JSAP Annual Meetings Extended Abstracts, Volume：2017.2, First page：3308, Last page：3308, 25 Aug. 2017
The Japan Society of Applied Physics, Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2017.2.0_3308
DOI ID：10.11470/jsapmeeting.2017.2.0_3308, ISSN：2758-4704, eISSN：2436-7613, J-Global ID：201702252467025188 - Fabrication of GaSb/AlGaSb Multi QWs Structure Grown on Si(100) Substrate Using Heteroepitaxial GaSb Thin-film / Dots Nucleation Layers
Machida Ryuto; Akahane Kouichi; Watanabe Issei; Hara Shinsuke; Fujikawa Sachie; Kasamatsu Akifumi; Fujishiro Hiroki
JSAP Annual Meetings Extended Abstracts, Volume：2017.2, First page：3305, Last page：3305, 25 Aug. 2017
The Japan Society of Applied Physics, Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2017.2.0_3305
DOI ID：10.11470/jsapmeeting.2017.2.0_3305, ISSN：2758-4704, eISSN：2436-7613, J-Global ID：201702235605857116 - Evaluationn of GaN-based THz-QCL structure grown by MOCVD on Si substrate
Ishiguro Toshiya; Fujikawa Sachie; Wang Ke; Maeda Noritoshi; Machida Ryuto; Fujishiro Hiroki; Hirayama Hideki
JSAP Annual Meetings Extended Abstracts, Volume：2017.2, First page：3411, Last page：3411, 25 Aug. 2017
The Japan Society of Applied Physics, Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2017.2.0_3411
DOI ID：10.11470/jsapmeeting.2017.2.0_3411, ISSN：2758-4704, eISSN：2436-7613, J-Global ID：201702258071799168 - Growth of Interfacially-controlled Heteroepitaxial GaSb Thin Film on GaAs(100) Substrate
Ito Takami; Suzuki Hiroki; Watanabe Yusuke; Fujikawa Sachie; Machida Ryuto; Fujishiro Hiroki
JSAP Annual Meetings Extended Abstracts, Volume：2017.2, First page：3306, Last page：3306, 25 Aug. 2017
The Japan Society of Applied Physics, Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2017.2.0_3306
DOI ID：10.11470/jsapmeeting.2017.2.0_3306, ISSN：2758-4704, eISSN：2436-7613, J-Global ID：201702248628355414 - Structural change and thermal transport properties of Al2O3 film on Ge substrate
Nakajima Yuta; Fujishiro Hiroki; Fujikawa Sachie; Maeda Tatsurou; Hattori Junichi; Fukuda Kouichi; Uchida Noriyuki
JSAP Annual Meetings Extended Abstracts, Volume：2017.1, First page：3052, Last page：3052, 01 Mar. 2017
The Japan Society of Applied Physics, Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2017.1.0_3052
DOI ID：10.11470/jsapmeeting.2017.1.0_3052, ISSN：2436-7613, eISSN：2436-7613, J-Global ID：201702239991867551 - Electron transport properties of InSb/Ga0.35In0.65Sb composite channel structure
Iwaki Takuya; Harada Yoshiaki; Takeuchi Jun; Fujikawa Sachie; Fujishiro Hiroki
JSAP Annual Meetings Extended Abstracts, Volume：2017.1, First page：3169, Last page：3169, 01 Mar. 2017
The Japan Society of Applied Physics, Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2017.1.0_3169
DOI ID：10.11470/jsapmeeting.2017.1.0_3169, ISSN：2436-7613, eISSN：2436-7613, J-Global ID：201702250993226860 - Development of Antimonide-Based Transistors
藤代博記; 磯野恭佑; 高橋択斗; 原田義彬; 岡直希; 竹内淳; 藤澤由衣; 藤川紗千恵; 町田龍人; 渡邊一世; 渡邊一世; 山下良美; 遠藤聡; 原紳介; 笠松章史
電子情報通信学会技術研究報告, Volume：117, Number：364, First page：33, Last page：36, 2017
Japanese
ISSN：0913-5685, J-Global ID：201802225646480231, CiNii Articles ID：40021432497, CiNii Books ID：AA1123312X - Fabrication of InSb-HEMT with fT of over 300 GHz using evaporated SiOx film
Tsuji Daisuke; Isono Kyousuke; Taketsuru Tatsuya; Fujikawa Sachie; Watanabe Issei; Yamashita Yoshimi; Endoh Akira; Hara Shinsuke; Kasamatsu Akifumi; Fujishiro Hiroki
JSAP Annual Meetings Extended Abstracts, Volume：2016.1, First page：3147, Last page：3147, 03 Mar. 2016
The Japan Society of Applied Physics, Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2016.1.0_3147
DOI ID：10.11470/jsapmeeting.2016.1.0_3147, ISSN：2436-7613, eISSN：2436-7613, J-Global ID：201602207975692184 - Thin-film GaSb Growth on Si(100) Substrate Using High-density GaSb Dots
Machida Ryuto; Toda Ryusuke; Fujikawa Sachie; Hara Shinsuke; Watanabe Issei; Akahane Kouichi; Kasamatsu Akifumi; Fujishiro Hiroki
JSAP Annual Meetings Extended Abstracts, Volume：2016.1, First page：3351, Last page：3351, 03 Mar. 2016
The Japan Society of Applied Physics, Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2016.1.0_3351
DOI ID：10.11470/jsapmeeting.2016.1.0_3351, ISSN：2436-7613, eISSN：2436-7613, J-Global ID：201602218847969221 - Electrical characterization of poly-InSb MOSFET for monolithic 3DIC
Takahashi Masahiro; Fujikawa Sachie; Fujishiro Hiroki; Irisawa Toshifumi; Tominaga Junji; Maeda Tatsuro
JSAP Annual Meetings Extended Abstracts, Volume：2016.1, First page：3032, Last page：3032, 03 Mar. 2016
The Japan Society of Applied Physics, Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2016.1.0_3032
DOI ID：10.11470/jsapmeeting.2016.1.0_3032, ISSN：2758-4704, eISSN：2436-7613, J-Global ID：201502206072752918 - Electrical characteristic improvement of the InSb-HEMT structure by the optimization of SLS number of times and growth temperature
Sanshiro kato; Miyashita Airi; Fujikawa Sachie; Fujishiro Hiroki
JSAP Annual Meetings Extended Abstracts, Volume：2016.1, First page：3104, Last page：3104, 03 Mar. 2016
The Japan Society of Applied Physics, Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2016.1.0_3104
DOI ID：10.11470/jsapmeeting.2016.1.0_3104, ISSN：2436-7613, eISSN：2436-7613, J-Global ID：201602214620442973 - Electron transport properties of In1-xGaxSb quantum well structure
Harada Yoshiaki; Oka Naoki; Fujikawa Satie; Fujishiro Hiroki
JSAP Annual Meetings Extended Abstracts, Volume：2016.1, First page：3350, Last page：3350, 03 Mar. 2016
The Japan Society of Applied Physics, Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2016.1.0_3350
DOI ID：10.11470/jsapmeeting.2016.1.0_3350, ISSN：2436-7613, eISSN：2436-7613, J-Global ID：201602211686503591 - 糖尿病患者における血糖値およびHbA1c予測の有用性に関する検討
杉本由里; 川上由香里; 藤川千春; 吉村早百合; 藤田美幸; 高橋幸栄; 松野華子; 久川奈緒子; 池田幸雄
Volume：59, Number：1, 2016
ISSN：1881-588X, J-Global ID：201802244550471447 - Temperature Dependence of Initial GaSb Growth Process on Al/Si(111)-√3×√3 Reconstructed Surface
Ogata Norihiro; Machida Ryuto; Ishii Tatsuya; Fujikawa Sachie; Hara Shinsuke; Irokawa Katsumi; Miki Hirofumi; Kawazu Akira; Fujishiro Hiroki
JSAP Annual Meetings Extended Abstracts, Volume：2015.2, First page：1436, Last page：1436, 31 Aug. 2015
The Japan Society of Applied Physics, Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2015.2.0_1436
DOI ID：10.11470/jsapmeeting.2015.2.0_1436, ISSN：2758-4704, eISSN：2436-7613, J-Global ID：201502213892956859 - Characterization of InGaSb thin heteroepitaxial layer on AlGaSb buffer layer
Hara Shinsuke; Watanabe Issei; Taketsuru Tatsuya; Tsuji Daisuke; Fujikawa Sachie; Fujishiro Hiroki; Akahane Kouichi; Kasamatsu Akifumi
JSAP Annual Meetings Extended Abstracts, Volume：2015.2, First page：3037, Last page：3037, 31 Aug. 2015
The Japan Society of Applied Physics, Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2015.2.0_3037
DOI ID：10.11470/jsapmeeting.2015.2.0_3037, ISSN：2758-4704, eISSN：2436-7613, J-Global ID：201502203622152078 - Noise Analysis of Nanoscale III-V HEMTs
Takahashi Takuto; Hatsushiba Shota; fujikawa Sachie; Fujishiro Hiroki
JSAP Annual Meetings Extended Abstracts, Volume：2015.2, First page：2772, Last page：2772, 31 Aug. 2015
The Japan Society of Applied Physics, Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2015.2.0_2772
DOI ID：10.11470/jsapmeeting.2015.2.0_2772, ISSN：2758-4704, eISSN：2436-7613, J-Global ID：201502200744094770 - Cut-off angle dependence of InSb/GaSb on GaAs(100) substrates
Suzuki Hiroki; Fujikawa Satie; Fujishiro Hiroki
JSAP Annual Meetings Extended Abstracts, Volume：2015.2, First page：3040, Last page：3040, 31 Aug. 2015
The Japan Society of Applied Physics, Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2015.2.0_3040
DOI ID：10.11470/jsapmeeting.2015.2.0_3040, ISSN：2758-4704, eISSN：2436-7613, J-Global ID：201502211471579034 - Electron transport characteristics of strain reduced InSb QW structure with AlInSb stepped buffer layer
竹鶴達哉; 藤川紗千恵; 原田義彬; 鈴木浩基; 磯野恭佑; 加藤三四郎; 辻大介; 藤代博記
電子情報通信学会技術研究報告, Volume：115, Number：156, First page：45, Last page：49, Jul. 2015
Japanese
ISSN：0913-5685, J-Global ID：201502215755603232, CiNii Articles ID：40020559934, CiNii Books ID：AA1123312X - A Study on Process Damage during Fabrication of InSb HEMT
Maeda Takaomi; Tsuji Daisuke; Taketsuru Tatsuya; Fujikawa Sachie; Fujishiro Hiroki; Watanabe Issei; Yamashita Yoshimi; Endoh Akira; Hara Shinsuke; Kasamatsu Akifumi
JSAP Annual Meetings Extended Abstracts, Volume：2015.1, First page：3001, Last page：3001, 26 Feb. 2015
The Japan Society of Applied Physics, Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2015.1.0_3001
DOI ID：10.11470/jsapmeeting.2015.1.0_3001, ISSN：2436-7613, eISSN：2436-7613, J-Global ID：201502209963471446 - Study of pure nitridation process for GaSb surface
Gotow Takahiro; Fujikawa Sachie; Fujishiro Hiroki I.; Ogura Mutsuo; Yasuda Tetsuji; Maeda Tatsuro
JSAP Annual Meetings Extended Abstracts, Volume：2015.1, First page：2816, Last page：2816, 26 Feb. 2015
The Japan Society of Applied Physics, Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2015.1.0_2816
DOI ID：10.11470/jsapmeeting.2015.1.0_2816, ISSN：2436-7613, eISSN：2436-7613, J-Global ID：201502231377794878 - Analysis of influence of threading dislocation on device characteristics of InSb HEMT
Hatsushiba Shota; Nagai Shohei; Fujikawa Sachie; Hara Shinsuke; Endoh Akira; Watanabe Issei; Kasamatsu Akifumi; Fujishiro Hiroki
JSAP Annual Meetings Extended Abstracts, Volume：2014.2, Number：168(ED2014 53-61), First page：3937, Last page：3937, 01 Sep. 2014
The Japan Society of Applied Physics, Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2014.2.0_3937
DOI ID：10.11470/jsapmeeting.2014.2.0_3937, ISSN：2758-4704, eISSN：2436-7613, J-Global ID：201402299065371321 - Study of the Al2O3/GaSb MOS structures with N2 plasma treatment
Gotow Takahiro; Fujikawa Sachie; Fujishiro Hiroki I.; Ogura Mutsuo; Yasuda Tetsuji; Maeda Tatsuro
JSAP Annual Meetings Extended Abstracts, Volume：2014.2, First page：2664, Last page：2664, 01 Sep. 2014
The Japan Society of Applied Physics, Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2014.2.0_2664
DOI ID：10.11470/jsapmeeting.2014.2.0_2664, ISSN：2758-4704, eISSN：2436-7613, J-Global ID：201402249518703064 - Growth Morphology of Three-Dimensional GaSb Islands on Ga/Si(100) Reconstructed Surface
Toda Ryusuke; Machida Ryuto; Ogata Norihiro; Fujikawa Sachie; Hara Shinsuke; Fujishiro Hiroki
JSAP Annual Meetings Extended Abstracts, Volume：2014.2, First page：1371, Last page：1371, 01 Sep. 2014
The Japan Society of Applied Physics, Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2014.2.0_1371
DOI ID：10.11470/jsapmeeting.2014.2.0_1371, ISSN：2758-4704, eISSN：2436-7613, J-Global ID：201402287844610440 - Fabrication and characterization of InSb HEMT structures using graded buffer layer
Taketsuru Tatsuya; Maeda Takaomi; Tsuji Daisuke; Fujikawa Sachie; Fujishiro Hiroki
JSAP Annual Meetings Extended Abstracts, Volume：2014.2, First page：3133, Last page：3133, 01 Sep. 2014
The Japan Society of Applied Physics, Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2014.2.0_3133
DOI ID：10.11470/jsapmeeting.2014.2.0_3133, ISSN：2758-4704, eISSN：2436-7613, J-Global ID：201402296867295494 - 貫通転位がInSb HEMTのデバイス特性に与える影響の解析—Analysis of effects of dislocation scattering on device characteristics of InSb HEMT—電子デバイス
初芝 正太; 長井 彰平; 藤川 紗千恵
Volume：114, Number：168, First page：13, Last page：18, 01 Aug. 2014
Japanese
ISSN：0913-5685, CiNii Articles ID：110009946920, CiNii Books ID：AA1123312X - Ⅲ-V DG MOSFETにおける遅延時間の発生メカニズムの解析—Analysis of Mechanisms of Delay Time Generation in Ⅲ-V DG MOSFETs—電子デバイス
矢島 悠貴; 大濱 諒子; 藤川 紗千恵
Volume：114, Number：168, First page：25, Last page：28, 01 Aug. 2014
Japanese
ISSN：0913-5685, CiNii Articles ID：110009946922, CiNii Books ID：AA1123312X - Fabrication and characterization of InSb-HEMTs structures using strain-relaxed AlInSb buffer layer
Sachie Fujikawa; Yusuke Takagi; Takaomi Maeda; Yutaro Konaka; Sinsuke Hara; Issei Watanabe; Akira Endo; Yoshimi Yamashit; Akifumi Kasamatsu; Hiroki Fujishir
JSAP Annual Meetings Extended Abstracts, Volume：2014.1, First page：2999, Last page：2999, 03 Mar. 2014
The Japan Society of Applied Physics, Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2014.1.0_2999
DOI ID：10.11470/jsapmeeting.2014.1.0_2999, ISSN：2436-7613, eISSN：2436-7613, J-Global ID：201402239902800977 - study of effects of roughness and dislocation scatterings on device characteristics in InSb HEMT
Nagai Shohei; Nagai Yutaro; Fujikawa Sachie; Hara Shinsuke; Endoh Akira; Watanabe Issei; Kasamatsu Akifumi; Fujishiro Hiroki; Hatsushiba Shota
JSAP Annual Meetings Extended Abstracts, Volume：2014.1, First page：3059, Last page：3059, 03 Mar. 2014
The Japan Society of Applied Physics, Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2014.1.0_3059
DOI ID：10.11470/jsapmeeting.2014.1.0_3059, ISSN：2436-7613, eISSN：2436-7613, J-Global ID：201402232355535584 - Study of the pre-deposition treatment for Al2O3/GaSb MOS structures
Gotow Takahiro; Fujikawa Sachie; Fujishiro Hiroki I.; Ogura Mutsuo; Yasuda Tetsuji; Maeda Tatsuro
JSAP Annual Meetings Extended Abstracts, Volume：2014.1, First page：2719, Last page：2719, 03 Mar. 2014
The Japan Society of Applied Physics, Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2014.1.0_2719
DOI ID：10.11470/jsapmeeting.2014.1.0_2719, ISSN：2436-7613, eISSN：2436-7613, J-Global ID：201402252219474220 - Analysis of Delay Time in III-V DG MOSFETs with Various Channel Materials
Yajima Yuki; Ohama Ryoko; Nishida Akio; Fujikawa Sachie; Fujishiro Hiroki
JSAP Annual Meetings Extended Abstracts, Volume：2014.1, First page：3060, Last page：3060, 03 Mar. 2014
The Japan Society of Applied Physics, Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2014.1.0_3060
DOI ID：10.11470/jsapmeeting.2014.1.0_3060, ISSN：2436-7613, eISSN：2436-7613, J-Global ID：201402242698449220 - Fabrication and characterization of InAsXSb01-x crystal for narrow band gap device application
Sachie Fujikawa; Yusuke Takagi; Takaomi Maeda; Hiroki Fujishiro
JSAP Annual Meetings Extended Abstracts, Volume：2014.1, First page：3272, Last page：3272, 03 Mar. 2014
The Japan Society of Applied Physics, Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2014.1.0_3272
DOI ID：10.11470/jsapmeeting.2014.1.0_3272, ISSN：2436-7613, eISSN：2436-7613, J-Global ID：201402228029314422 - 深紫外LED高効率化への新たな展開 素子透明化によるAlGaN深紫外LEDの光取出し効率の高効率化
平山秀樹; 前田哲利; 藤川紗知恵; 豊田史朗; 鎌田憲彦
Number：386, 2014
ISSN：0286-9659, J-Global ID：201402231727183985 - Analysis of Mechanisms of Delay Time Generation in III-V DG MOSFETS
矢島悠貴; 大濱諒子; 藤川紗千恵; 藤代博記
電子情報通信学会技術研究報告, Volume：114, Number：168(ED2014 53-61), 2014
ISSN：0913-5685, J-Global ID：201402254687160391 - The micro machining process technology of nano imprint and dry etching to improve the efficiency of nitride LED
鹿嶋行雄; 松浦恵里子; 嶋谷聡; 小久保光典; 田代貴晴; 大川貴史; 上村隆一郎; 長田大和; 藤川紗千恵; 平山秀樹
電子情報通信学会技術研究報告, Volume：114, Number：336(ED2014 73-97), 2014
ISSN：0913-5685, J-Global ID：201502252908228330 - Engaged in the Study of the Light and Electron Device
Fujikawa Sachie
The Journal of The Institute of Image Information and Television Engineers, Volume：68, Number：12, First page：922, Last page：923, 2014
The Institute of Image Information and Television Engineers, Japanese
DOI：https://doi.org/10.3169/itej.68.922
DOI ID：10.3169/itej.68.922, ISSN：1342-6907, eISSN：1881-6908, CiNii Articles ID：110009892567, CiNii Books ID：AN10588970 - 各種チャネル材料を用いたナノスケールHEMTの周波数限界
長井 彰平; 永井 佑太郎; 藤川 紗千恵; 原 紳介; 遠藤 聡; 渡邊 一世; 笠松 章史; 藤代 博記
Volume：2013.2, First page：3738, Last page：3738, 31 Aug. 2013
Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2013.2.0_3738
DOI ID：10.11470/jsapmeeting.2013.2.0_3738, ISSN：2758-4704, eISSN：2436-7613, J-Global ID：201302280579100734 - GaSbショットキー接合型メタルS/D pMOSFETsの動作実証
後藤 高寛; 藤川 紗千恵; 藤代 博記; 小倉 睦郞; 安田 哲二; 前田 辰郎
Volume：2013.2, First page：3470, Last page：3470, 31 Aug. 2013
Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2013.2.0_3470
DOI ID：10.11470/jsapmeeting.2013.2.0_3470, ISSN：2758-4704, eISSN：2436-7613, J-Global ID：201302279302347262 - 各種チャネル材料を用いたIII-V DG MOSFETの特性解析
大濱 諒子; 西田 明央; 藤川 紗千恵; 藤代 博記
Volume：2013.2, First page：3739, Last page：3739, 31 Aug. 2013
Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2013.2.0_3739
DOI ID：10.11470/jsapmeeting.2013.2.0_3739, ISSN：2758-4704, eISSN：2436-7613, J-Global ID：201302244916997338 - 真空アニール法がAl₂O₃/GaSb MOS界面に与える影響—Effect of Vacuum Annealing on Al₂O₃/GaSb MOS Interfaces—電子デバイス
後藤 高寛; 藤川 紗千恵; 藤代 博記
Volume：113, Number：176, First page：37, Last page：42, Aug. 2013
Japanese
ISSN：0913-5685, CiNii Articles ID：110009805999, CiNii Books ID：AA1123312X - Effect of Vacuum Annealing on Al2O3/GaSb MOS Interfaces
後藤高寛; 後藤高寛; 藤川紗千恵; 藤代博記; 小倉睦郎; 安田哲二; 前田辰郎; 前田辰郎
電子情報通信学会技術研究報告, Volume：113, Number：176(ED2013 37-49), 2013
ISSN：0913-5685, J-Global ID：201302233341815885 - Formation of GaSb Islands on Si(111) Substrate Using Ga/Si(111) Surface Reconstructions
町田龍人; 戸田隆介; 吉木圭祐; 藤川紗千恵; 原紳介; 色川勝己; 三木裕文; 河津璋; 藤代博記
電子情報通信学会技術研究報告, Volume：113, Number：176(ED2013 37-49), 2013
ISSN：0913-5685, J-Global ID：201302280443904120 - 結合ピラーAlNバッファーを用いた高効率深紫外LEDの検討
富田優志; 富田優志; 豊田史朗; 豊田史朗; 藤川紗千恵; 鎌田憲彦; 鎌田憲彦; 平山秀樹; 平山秀樹
Volume：60th, First page：3214, Last page：3214, 2013
Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2013.1.0_3214
DOI ID：10.11470/jsapmeeting.2013.1.0_3214, ISSN：2436-7613, eISSN：2436-7613, J-Global ID：201302207021357306 - p-AlGaN透明コンタクト層を用いた280nm帯深紫外LEDの高効率化
前田哲利; 藤川紗千恵; 平山秀樹; 前田哲利; 藤川紗千恵; 平山秀樹
Volume：60th, First page：3194, Last page：3194, 2013
Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2013.1.0_3194
DOI ID：10.11470/jsapmeeting.2013.1.0_3194, ISSN：2436-7613, eISSN：2436-7613, J-Global ID：201302240637199582 - 深紫外LEDバッファー用結合ピラーAlNの結晶成長
豊田史朗; 豊田史朗; 富田優志; 富田優志; 藤川紗千恵; 鎌田憲彦; 鎌田憲彦; 平山秀樹; 平山秀樹
Volume：60th, First page：3213, Last page：3213, 2013
Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2013.1.0_3213
DOI ID：10.11470/jsapmeeting.2013.1.0_3213, ISSN：2436-7613, eISSN：2436-7613, J-Global ID：201302263559623062 - Recent Progress of AlGaN-based Deep-UV LEDs
Hirayama Hideki; Fujikawa Sachie; Kamata Norihiko
IEEJ Transactions on Electronics, Information and Systems, Volume：133, Number：8, First page：1443, Last page：1448, 2013
Deep-ultraviolet (DUV) light-emitting diodes (LEDs) are demanded for a wide variety of potential applications, such as sterilization, water and air purification, medical use, and so on. We have demonstrated 222-351nm AlGaN and quaternary InAlGaN-based DUV-LEDs by developing a low threading dislocation density (TDD) AlN crystal. We achieved an external quantum efficiency (EQE) of about 4% and an output power more than 30mW in DUV-LEDs for use in sterilization applications by developing new crystal growth techniques.
The Institute of Electrical Engineers of Japan, Japanese
DOI：https://doi.org/10.1541/ieejeiss.133.1443
DOI ID：10.1541/ieejeiss.133.1443, ISSN：0385-4221, eISSN：1348-8155, J-Global ID：201302264842618349, CiNii Articles ID：10031189032, CiNii Books ID：AN10065950 - AlGaN系深紫外LEDの高効率化への取り組み—Approaches for improving efficiency of AlGaN-based deep-UV LEDs—電子部品・材料
富田 優志; 平山 秀樹; 藤川 紗千恵
Volume：112, Number：328, First page：87, Last page：92, Nov. 2012
Japanese
ISSN：0913-5685, CiNii Articles ID：110009641957, CiNii Books ID：AA1123312X - Approaches for improving efficiency of AlGaN-based deep-UV LEDs
富田優志; 平山秀樹; 藤川紗千恵; 水澤克哉; 豊田史朗; 鎌田憲彦
電子情報通信学会技術研究報告, Volume：112, Number：327(ED2012 65-92), 2012
ISSN：0913-5685, J-Global ID：201302222267092343 - フォトニック結晶を用いたAlGaN系深紫外LEDの高効率化
藤川紗千恵; 藤川紗千恵; 平山秀樹; 平山秀樹; 鹿嶋行雄; 西原浩巳; 田代貴晴; 大川貴史; YOUN Sung Won; 高木秀樹
Volume：73rd, First page：3347, Last page：3347, 2012
Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2012.2.0_3347
DOI ID：10.11470/jsapmeeting.2012.2.0_3347, eISSN：2436-7613, J-Global ID：201202264138381417 - Chracteristics of AlN crystal growth depending on m- and a-axis oriented off-angle of c-sapphire substrate and fabrication of high-efficiency AlGaN deep-UV LEDs
MAEDA Noritoshi; FUJIKAWA Sachie; HIRAYAMA Hideki
電子情報通信学会技術研究報告, Volume：111, Number：290, First page：107, Last page：112, 10 Nov. 2011, [Reviewed]
Japanese
ISSN：0913-5685, J-Global ID：201202264236980728, CiNii Articles ID：10031104187, CiNii Books ID：AN10012954 - Recent progress and future prospects of AlGaN-based deep-UV LEDs
HIRAYAMA Hideki; FUJIKAWA Sachie; TSUKADA Yusuke; KAMATA Norihiko
Oyo Buturi, Volume：80, Number：4, First page：319, Last page：324, 10 Apr. 2011, [Reviewed]
We demonstrated 220-350-nm-band AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs). Low threading-dislocation density (TDD) AlN buffer layers were realized by using an ammonia (NH3) pulse-flow multilayer (ML) growth technique. We achieved a significant increase in the internal quantum efficiency (IQE) of AlGaN quantum well (QW) emission from about 0.5% to more than 50% by reducing the TDD. We also achieved a significant increase in electron injection efficiency (EIE) by introducing multiquantum barriers (MQBs). We then obtained about 4% external quantum efficiency (EQE) and 30mW cw output power for sterilization-use wavelength DUV LEDs.
The Japan Society of Applied Physics, Japanese
DOI：https://doi.org/10.11470/oubutsu.80.4_319
DOI ID：10.11470/oubutsu.80.4_319, ISSN：0369-8009, eISSN：2188-2290, J-Global ID：201102224899395412, CiNii Articles ID：10027969857, CiNii Books ID：AN00026679 - 殺菌への実用を目指したSi基板上深紫外LEDの実現
藤川紗千恵; 平山秀樹
2011
J-Global ID：201202254430600620 - a軸方向傾斜c面サファイア上に作製した高効率深紫外LED
藤川紗千恵
Volume：58th, First page：3599, Last page：3599, 2011
Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2011.1.0_3599
DOI ID：10.11470/jsapmeeting.2011.1.0_3599, eISSN：2436-7613, J-Global ID：201102277405115354, CiNii Articles ID：10029622893 - Si基板上280nm帯InAlGaN深紫外LED
藤川紗千恵; 藤川紗千恵; 平山秀樹; 平山秀樹
Volume：71st, First page：3274, Last page：3274, 2010
Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2010.2.0_3274
DOI ID：10.11470/jsapmeeting.2010.2.0_3274, eISSN：2436-7613, J-Global ID：201002247071350175 - Fujikawa, S., Takano, T., Kondo, Y. and Hirayama, H.: Realization of 340nm-band High-Power UV-LED Using p-Type InAlGaN [Proceedings of the First International Conference on White LEDs and Solid State Lighting, pp. 378-381 (2007)]
藤川 紗千恵
Journal of the Illuminating Engineering Institute of Japan, Volume：93, Number：6, First page：373, Last page：374, 01 Jun. 2009
The Illuminating Engineering Institute of Japan (IEIJ), Japanese
ISSN：0019-2341, CiNii Articles ID：110007327049, CiNii Books ID：AN00268860 - InAlGaN四元混晶半導体を用いた深紫外発光量子ドットの作製
高野隆好; 藤川紗千恵; 平山秀樹; 平山秀樹; 杉山正和; 杉山正和
Volume：56th, Number：1, 2009
J-Global ID：200902232415539673 - 250nm帯InAlGaN量子井戸紫外LEDのサブミリワット出力動作
塚田悠介; 塚田悠介; 平山秀樹; 平山秀樹; 藤川紗千恵; 藤川紗千恵; 野口憲路; 野口憲路; 野口憲路; 鎌田憲彦; 鎌田憲彦
Volume：56th, Number：1, 2009
J-Global ID：200902264425540156 - 2”×3MOCVDを用いた核形成層制御によるサファイア基板上AlNの高品質化
高野隆好; 高野隆好; 藤川紗千恵; 平山秀樹; 椿健治; 椿健治
Volume：70th, Number：1, 2009
J-Global ID：200902243054387670 - 280nm帯紫外LEDにおけるInAlGaNの極低速成長の重要性
藤川紗千恵; 藤川紗千恵; 平山秀樹; 平山秀樹; 高野隆好; 高野隆好; 椿健治; 椿健治
Volume：70th, Number：1, 2009
J-Global ID：200902204412849805 - Siドーピングによる250nm帯InドープAlGaN量子井戸LED高効率化の検討
塚田悠介; 塚田悠介; 塚田悠介; 藤川紗千恵; 藤川紗千恵; 平山秀樹; 平山秀樹; 乗松潤; 乗松潤; 乗松潤; 鎌田憲彦; 鎌田憲彦
Volume：70th, Number：1, 2009
J-Global ID：200902279740820407 - In混入AlGaNの発光およびp型特性と高効率深紫外LEDへの応用
平山秀樹; 平山秀樹; 平山秀樹; 藤川紗千恵; 藤川紗千恵; 塚田悠介; 塚田悠介; 塚田悠介; 乗松潤; 乗松潤; 乗松潤; 高野隆好; 高野隆好; 野口憲路; 野口憲路; 椿健治; 鎌田憲彦; 鎌田憲彦
Volume：70th, 2009
J-Global ID：200902273859255629 - 280nm帯InAlGaN高出力紫外LED—280nm-band InAlGaN-based high-power UV LEDs—レーザ・量子エレクトロニクス
平山 秀樹; 藤川 紗千恵; 高野 隆好
Volume：108, Number：323, First page：83, Last page：88, Nov. 2008
Japanese
ISSN：0913-5685, CiNii Articles ID：110007127193, CiNii Books ID：AA1123312X - ELO-AlNテンプレート上に作製した270nm帯AlGaN紫外LED—270nm-band AlGaN deep-UV LEDs fabricated on ELO-AlN templates—電子デバイス
乗松 潤; 平山 秀樹; 藤川 紗千恵
Volume：108, Number：321, First page：77, Last page：82, Nov. 2008
Japanese
ISSN：0913-5685, CiNii Articles ID：110007127194, CiNii Books ID：AA1123312X - InAlGaN4元混晶を用いた280nm帯深紫外LED
藤川紗千恵; 平山秀樹; 平山秀樹; 高野隆好; 高野隆好; 椿健治; 椿健治
Volume：55th, Number：1, 2008
J-Global ID：200902206165005685 - 量産対応型MOCVDによる270nm帯高出力深紫外LEDの検討
高野隆好; 高野隆好; 藤川紗千恵; 椿健治; 椿健治; 平山秀樹; 平山秀樹
Volume：55th, Number：1, 2008
J-Global ID：200902245338577545 - ELO-AlNテンプレート上に作製した270nm帯AlGaN-LEDのCWミリワット出力動作
乗松潤; 乗松潤; 乗松潤; 平山秀樹; 平山秀樹; 平山秀樹; 野口憲路; 野口憲路; 野口憲路; 藤川紗千恵; 藤川紗千恵; 藤川紗千恵; 高野隆好; 椿健治; 鎌田憲彦; 鎌田憲彦
Volume：69th, Number：1, 2008
J-Global ID：200902208599452763 - SiモジュレーションドープInAlGaN発光層を用いた280nm帯紫外LEDの10mW出力動作
藤川紗千恵; 藤川紗千恵; 平山秀樹; 平山秀樹; 高野隆好; 高野隆好; 椿健治; 椿健治
Volume：69th, Number：1, 2008
J-Global ID：200902235584658613 - 紫外LED用低貫通転位密度ELO-AlNテンプレートの作製
平山秀樹; 平山秀樹; 平山秀樹; 藤川紗千恵; 藤川紗千恵; 藤川紗千恵; 乗松潤; 乗松潤; 乗松潤; 高野隆好; 高野隆好; 椿健治; 椿健治; 鎌田憲彦; 鎌田憲彦
Volume：69th, Number：1, 2008
J-Global ID：200902286364863538 - 270 nm-band AlGaN deep-UV LEDs fabricated on ELO-AlN templates
乗松潤; 乗松潤; 乗松潤; 平山秀樹; 平山秀樹; 平山秀樹; 藤川紗千恵; 藤川紗千恵; 藤川紗千恵; 野口憲路; 野口憲路; 野口憲路; 高野隆好; 高野隆好; 椿健治; 椿健治; 鎌田憲彦; 鎌田憲彦
電子情報通信学会技術研究報告, Volume：108, Number：321(ED2008 152-183), 2008
ISSN：0913-5685, J-Global ID：200902227936433673 - 280 nm-band InAlGaN-based high-power UV LEDs
平山秀樹; 平山秀樹; 平山秀樹; 藤川紗千恵; 藤川紗千恵; 藤川紗千恵; 高野隆好; 高野隆好; 椿健治; 椿健治
電子情報通信学会技術研究報告, Volume：108, Number：321(ED2008 152-183), 2008
ISSN：0913-5685, J-Global ID：200902276527657404 - p-InAlGaNと高品質AlNを用いた340nm帯高出力LED—340nm-band high-power UV-LED using p-type InAlGaN layers and high-quality AlN buffer—レーザ・量子エレクトロニクス
藤川 紗千恵; 高野 隆好; 近藤 行廣
Volume：107, Number：253, First page：29, Last page：34, Oct. 2007
Japanese
ISSN：0913-5685, CiNii Articles ID：110006453382, CiNii Books ID：AA1123312X - 250-350nm帯AlGaN系紫外高輝度LEDの開発—特集 LED照明の最近の動向
平山 秀樹; 高野 隆好; 藤川 紗千恵
Volume：29, Number：6, First page：572, Last page：581, Jun. 2007
Japanese
ISSN：0911-5943, J-Global ID：200902274738722854, CiNii Articles ID：40015507883, CiNii Books ID：AN00360954 - AlN/AlGaNテンプレート改善による出力16mW以上InAlGaN紫外LEDの実現
高野隆好; 高野隆好; 藤川紗千恵; 近藤行廣; 近藤行廣; 平山秀樹
Volume：54th, Number：1, 2007
J-Global ID：200902201725740872 - 230-350nm窒化物深紫外LEDの進展と今後の展望
平山秀樹; 谷田部透; 谷田部透; 野口憲路; 野口憲路; 藤川紗千恵; 高野隆好; 高野隆好; 鎌田憲彦; 近藤行廣
Volume：68th, 2007
J-Global ID：200902213635367909 - 電子注入機構の最適化によるInAlGaN紫外LEDの高出力化
藤川紗千恵; 高野隆好; 高野隆好; 近藤行廣; 近藤行廣; 平山秀樹
Volume：54th, Number：1, 2007
J-Global ID：200902218499336486 - 340nm-band high-power UV-LED using p-type InAlGaN layers and high-quality AlN buffer
藤川紗千恵; 高野隆好; 近藤行廣; 平山秀樹
電子情報通信学会技術研究報告, Volume：107, Number：253(LQE2007 57-79), 2007
ISSN：0913-5685, J-Global ID：200902226787430740 - p型InAlGaN 4元混晶を用いた340nm帯高出力(>16mW)紫外LEDの実現
藤川紗千恵; 高野隆好; 高野隆好; 近藤行廣; 近藤行廣; 平山秀樹
Volume：54th, Number：1, 2007
J-Global ID：200902252151866817 - 深紫外発光InAlGaN 4元混晶量子ドットの形成と電流注入発光
藤川紗千恵; 平山秀樹
Volume：68th, Number：1, 2007
J-Global ID：200902252197780500 - Development of High-Power UV-LEDs using Quaternary InAlGaN
HIRAYAMA Hideki; TAKANO Takayoshi; FUJIKAWA Sachie; OHASHI Tomoaki; YATABE Tohru; KAMATA Norihiko; KONDO Yukihiro
電気学会光・量子デバイス研究会資料, Volume：2006, Number：37, First page：5, Last page：10, 08 Dec. 2006
Japanese
J-Global ID：200902282847792563, CiNii Articles ID：10018459460, CiNii Books ID：AN00140211 - InAlGaN4元混晶紫外LEDの高出力化の検討
高野隆好; 高野隆好; 藤川紗千恵; 近藤行広; 近藤行広; 平山秀樹
Volume：53rd, Number：1, 2006
J-Global ID：200902209704351656 - AlGaN系紫外LEDのLLOプロセスにおけるKOHエッチング効果
藤川紗千恵; 高野隆好; 高野隆好; 平山秀樹; 近藤行廣; 近藤行廣
Volume：67th, Number：1, 2006
J-Global ID：200902263288114547 - Observation of High Internal Quantum Efficiency from Quaternary InAlGaN Quantum Well with 330 nm-band UV Emission
平山秀樹; 高野隆好; 大橋智昭; 大橋智昭; 藤川紗千恵; 鎌田憲彦; 近藤行広
電子情報通信学会技術研究報告, Volume：105, Number：326(ED2005 139-156), 2005
ISSN：0913-5685, J-Global ID：200902275720842883
- 生体無害ウイルス不活性化を目指した230nm帯高出力far-UVC LEDの進展
平山秀樹; Ajmal Muhammad Khan; 鹿嶋行雄; 松浦恵理子; 前田哲利; 牟田実広; 大神裕之; 祝迫恭; 藤川紗千恵; 矢口裕之, [Joint work]
Jul. 2024 - サファイア基板上220～230nmfar-UVC LEDの進展
平山秀樹; Ajmal Muhammad Khan; 鹿嶋行雄; 松浦恵理子; 前田哲利; 牟田実広; 大神裕之; 毛利健吾; 河島宏和; 祝迫恭; 藤川紗千恵; 矢口裕之, [Joint work]
May 2024 - 光の更なる活用を目指して
藤川紗千恵
Jan. 2021 - 光・電子デバイスの研究に携わって
藤川紗千恵
Dec. 2014 - 素子透明化によるAlGaN深紫外LEDの光取出し効率の高効率化
平山秀樹; 前田哲利; 藤川紗千恵; 豊田史朗; 鎌田憲彦
2014 - AlGaN系深紫外LEDの進展と今後の展望
平山秀樹; 前田哲利; 藤川紗千恵; 豊田史郎; 金澤裕也; 鎌田憲彦; 椿健治; 阪井淳; 高野隆好; 美濃卓哉; 野口憲路
2014 - AlGaN系深紫外LEDの進展と展望
平山秀樹; 藤川紗千恵; 塚田悠介; 鎌田憲彦
Apr. 2011 - 10mW越の深紫外LED－殺菌システムを小型・高効率に－
Aug. 2008 - 250-350nm帯AlGaN系深紫外高輝度LEDの開発
平山秀樹; 高野隆好; 藤川紗千恵; 大橋智昭; 鎌田憲彦; 近藤行廣
2007
- GaN系量子カスケードレーザーの低損失導波路の設計
金子 瑛; 高橋 瞳瑠; 藤川 紗千恵; 王 利; 矢口 裕之; 平山 秀樹
Nov. 2024
Nov. 2024 - Nov. 2024 - GaN系量子カスケードレーザーの高利得のための設計最適化
高橋 瞳瑠; 金子 瑛; 藤川 紗千恵; 矢口 裕之; 平山 秀樹
Nov. 2024 - Nov. 2024 - Growth Morphology of GaSb Islands on Ga-Induced Si(100)-2×2 Reconstructed Surface
Ryuto Machida; Ryusuke Toda; Keisuke Yoshiki; Sachie Fujikawa; Shinsuke Hara; Akira Kawazu; Hiroki I.Fujishiro
12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures in conjunction with 21st International Colloquium on Scanning Probe Microscopy(ACSIN-12&ICSPM21)
Nov. 2024 - Nov. 2024, English - Reduction of Forward Voltage in 230 nm AlGaN far-UVC LED Using Polarization Assisted AlGaN Hole Injection Layer
Kohei Fujimoto; Mitsuhiro Muta; Muhammad Ajmal Khan; Sachie Fujikawa; Hiroyuki Yaguchi; Dr. Yasushi Iwaisako; Hideki Hirayama
APWS 2024
Oct. 2024 - Oct. 2024, English, Oral presentation - GaN系10THz帯量子カスケードレーザー光利得のドーピング濃度依存性
高橋 瞳瑠; 王 利; 藤川 紗千恵; 矢口 裕之; 平山 秀樹
Sep. 2024
Japanese, Oral presentation - AlN基板を用いた片面金属導波路GaN系THz-QCLの導波路解析
金子 瑛; 藤川 紗千恵; 矢口 裕之; 平山 秀樹
Sep. 2024
Japanese, Oral presentation - MBE法を用いたBeドープInSb薄膜の成長と電気的特性評価
星野 陸; 漆戸 祐哉; 矢口 裕之; 藤川 紗千恵
Sep. 2024
Japanese - Sb照射によりGaSbを形成したGaAs基板上へのInSbのAsフリー成長
白川 裕暉; 額賀 陽平; 矢口 裕之; 藤川 紗千恵
Sep. 2024
Japanese - マグネトロンスパッタ法によるInSb1-xNx薄膜を用いたPIN構造の作製
有路 結斗; 矢口 裕之; 藤川 紗千恵
Sep. 2024
Japanese - スパッタ法によるSnドープ及びZn変調ドープInSb1-xNx薄膜成長
藤川 紗千恵; 有路 結斗; 矢口 裕之
Sep. 2024
Japanese - 分極ドープ層導入による230nm帯AlGaN far-UVC LEDの特性改善
藤本 康平; 牟田 実広; アジマル・カーン; 藤川紗千恵; 矢口 裕之; 祝迫 恭; 平山 秀樹
Sep. 2024
Japanese, Oral presentation - Increasing the Efficiency of 219-222 nm AlGaN Far-UVC LEDs with Graded Al Content AlGaN Polarization Doping Layers
Hideki Hirayama; Harshitha Rangaraju; Yuki Nakamura; Sachie Fujikawa; M.Ajmal Khan; Hiroyuki Yaguci; Yasushi Iwaisako
International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XXI)
May 2024 - May 2024, English - 分極ドープ層を用いた 222 nm AlGaN far-UVC LED の高効率化
Rangaraju Harshitha; 中村 勇稀; 住司 光; Khan Ajma; 藤川 紗千恵; 矢口 裕之; 遠藤 聡; 藤代 博記; 祝迫 恭; 平山 秀樹
Mar. 2024
Japanese, Oral presentation - 230nm帯far-UVCLEDの短波長化の検討と高出力LEDパネルの実現
牟田実広; 大神裕之; 毛利健吾; 河島宏和; 前田哲利; Khan Ajmal; 鹿嶋行雄; 松浦恵里子; 中村勇稀; 住司光; 桐原大河; 藤川紗千恵; 矢口裕之; 祝迫恭; 平山秀樹
Dec. 2023
Japanese, Oral presentation - Growth and Characterization of Sb-based Dilute Nitride Semiconductors by Sputtering
Sachie Fujikawa
2023 MRS Fall Meeting and Exhibit, Nov. 2023
English - Efficiency Increase in 230 nm AlGaN far-UVC LED by Changing Quantum Well Str20ucture
Yuya Nagata; Fumiya Chugenji; Noritoshi Maeda; Ajmal Khan; Sachie Fujikawa; Hiroyuki Yaguchi; Yasushi Iwaisako; Hideki Hirayama
14th International Conference on Nitride Semiconductors (ICNS-14)
Nov. 2023 - Nov. 2023, English - Realization of EQE 0.008 % operation in 221.5 nm AlGaN far-UVC LED
Yuki Nakamura; Kou Sumishi; Sachie Fujikawa; Hiroyuki Yaguchi; Akira Endoh; Hiroki Fujishiro; Yasushi Iwaisako; Hideki Hirayama
14th International Conference on Nitride Semiconductors (ICNS-14)
Nov. 2023 - Nov. 2023, English, Oral presentation - DCスパッタ法によるInSb1-xNx薄膜の成長条件の検討
藤川 紗千恵; 矢口 裕之
Sep. 2023
Japanese - 230 nm AlGaN far-UVC LEDの発光効率の量子井戸構造依存性
永田 裕弥; 仲元寺 郁弥; 前田 哲利; 藤川 紗千恵; 矢口 裕之; 祝迫 泰; 平山 秀樹
Sep. 2023
Japanese, Oral presentation - 221.5 nm far-UVC AlGaN LED における EQE0.008 %動作の実現
中村 勇稀; 住司 光; 藤川 紗千恵; 矢口 裕之; 遠藤 聡; 藤代 博記; 祝迫 恭; 平山 秀樹
Sep. 2023
Japanese - Electronic structure analysis of InSb1-xNx alloys by first-principles calculation
Sachie Fujikawa; Yoshitaka Fujiwara; Hiroyuki Yaguchi
International Conference on Crystal Growth and Epitaxy (ICCGE) 20, Aug. 2023
English - Fabrication of InSb(N) thin film by DC magnetron sputtering
Sachie Fujikawa; Yuto Shimbo
International Conference on Crystal Growth and Epitaxy (ICCGE) 20, Aug. 2023
English - 窒素��ドープ GaAs 中の等電子トラップに局在した励起子分子の束縛エネルギーに関する研究
矢野 裕子; 高宮 健吾; 藤川 紗千恵; 八木 修平; 矢口 裕之; 小林 真隆; 秋山 英文
Mar. 2023
Japanese, Oral presentation - 第一原理計算によるInSb1-xNx混晶の電子構造解析
藤川 紗千恵; 藤原 彬嵩; 矢口 裕之
Sep. 2022
Japanese - The influence of both Mg-concentration and excimer laser annealing (ELA) on p-AlGaN cladding layer for the application of AlGaN-based UVB Laser Diodes
Muhammad Ajmal Khan; Juan Paolo Bermundo; Yasuaki Ishikawa; Hiroshi Ikenoue; Sachie Fujikawa; Noritoshi Maeda; Masafumi Jo; Hideki Hirayama
The 80th JSAP Autumn Meeting, Sep. 2019
English - 微傾斜サファイア基板上AlNの選択横方向成長
斉藤 貴大; 中村 亮太; 藤川 紗千恵; 金 輝俊; 前田 哲利; 岡田 成仁; 平山 秀樹; 只友 一行
Sep. 2019
Japanese - 電子ブロック層の最適化による250nm AlGaN UVC-LEDの出力改善
中村 励志; 藤川 紗千恵; 前田 哲利; 遠藤 聡; 藤代 博記; 平山 秀樹
Sep. 2019
Japanese, Oral presentation - Epitaxial Lateral Overgrowth of AlN with Partially Non-dislocation-region on Vicinal AlN template
N. Okada; F. Kim; T. Saito; S. Fujikawa; N. Maeda; H. Hirayama; K. Tadatomo
13th International Conference on Nitride Semiconductors (ICNS-13), Jul. 2019
English, Oral presentation - Realization of High Light O utput Power in AlGaN-Based UVB LED at 310±2nm Emission Using Highly Relaxed (50%) n-AlGaN Electron Injection Layer
M.A. Khan; N.Maeda; S.Fujikawa; Masafumi Jo; Yoichi Yamada; Hideki Hirayama
13th International Conference on Nitride Semiconductors (ICNS-13), Jul. 2019
English, Oral presentation - GaN系QCL実現に向けたSi基板上GaN/AlGaN超格子構造の作製
藤川 紗千恵; 石黒 稔也; 王 科; 藤代 博記; 平山 秀樹
Nov. 2018
Japanese - Development of 240 nm-band high output power AlGaN UVC LED
Toshiya Ishiguro; Reiji Nakamura; Sachie Fujikawa; Noritoshi Maeda; Ryuto Machida; Hiroki Fujishiro; Hideki Hirayama
International workshop on Nitride Semiconductors(IWN2018), Nov. 2018
English, Oral presentation - AlNの選択横⽅向成⻑におけるストライプ⽅位依存性
金 輝俊; 藤 貴大; 藤川 紗千恵; 前田 哲利; 岡田 成仁; 平山 秀樹; 只友一行
Sep. 2018 - Evaluation of GaN-based THz-QCL structure on Si substrate grown by MOCVD
Sachie Fujikawa; Toshiya Ishiguro; Ke Wang; Wataru Terashima; Hiroki Fujishiro; Hideki Hirayama
19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX)
Jun. 2018 - Jun. 2018, English - アンチモン系トランジスタの開発
藤代博記; 磯野恭佑; 原田義彬; 岡直希; 竹内淳; 藤川紗千恵; 町田龍人; 渡邊一世; 山下良美; 遠藤聡; 原紳介; 笠松章史
Dec. 2017, [Invited]
Japanese, Invited oral presentation - 低温成長InSbがGaAs基板上InSb薄膜成長に与える影響
渡邊 優介; 椎野 響太; 伊藤 峰水; 鈴木 浩基; 藤川 紗千恵; 町田 龍人; 藤代 博記
Sep. 2017
Japanese - GaAs(100)基板上ヘテロエピタキシャルGaSb薄膜成長の界面制御
伊藤 峰水; 鈴木 浩基; 渡邊 優介; 藤川 紗千恵; 町田 龍人; 藤代 博記
Sep. 2017
Japanese - GaSb薄膜 ／ドット核形成層を用いたSi(100)基板上のGaSb/AlGaSb MQW構造の作製
町田 龍人; 赤羽 浩一; 渡邊 一世; 原 紳介; 藤川 紗千恵; 笠松 章史; 藤代 博記
Sep. 2017
Japanese - Si基板上へのGaN系THz-QCL構造のMOCVD成長と評価
石黒 稔也; 藤川 紗千恵; 王 科; 前田 哲利; 町田 龍人; 藤代 博記; 平山 秀樹
Sep. 2017
Japanese - Electron Transport Properties of InSb/Ga0.35In0.65Sb Composite Channel Structure
S. Fujikawa; T. Iwaki; Y. Harada; J.Takeuchi; Y.Endoh; I. Watanabe; Y. Yamashita; A. Endoh; S. Hara; A. Kasamatsu; H.I. Fujishiro
Compound Semiconductor Week 2017 (CSW 2017), May 2017
May 2017 - May 2017, English - Monte Carlo Study on Electron Transport Properties of GaxIn1-xSb HEMT Structures Considering Roughness Scattering
Yui Fujisawa; Takuto Takahashi; Shougo Kawamura; Sachie Fujikawa; Hiroki Fujishiro
Compound Semiconductor Week 2017 (CSW 2017), May 2017
English - Fabrication of GaSb/AlGaSb Multi Quantum Wells Structure Grown on Si(100) Substrate Using Heteroepitaxial GaSb Thin-film and Dots Nucleation Layers
R. Machida; K. Akahane; I. Watanabe; S. Hara; S. Fujikawa; A. Kasamatsu; H.I. Fujishiro
IPRM 2017 on Indium Phosphide and Related Materials, May 2017 - InSb/Ga0.35In0.65Sb複合チャネル構造の電気的特性の評価
岩木拓也; 原田義彬; 竹内淳; 遠藤勇輝; 藤川紗千恵; 藤代博記
Mar. 2017
Japanese - Ge基板上の基板上の基板上のAl 2O3膜の構造変化と熱輸送特性 膜の構造変化と熱輸送特性膜
中島 佑太; 藤川 紗千恵; 藤代 博記; 服部 淳一; 福田 浩一; 内田 紀行; 前田 辰郎
Mar. 2017
Japanese - Research and development of InP, GaN and InSb-based HEMTs and MMICs for terahertz-wave wireless communications
I. Watanabe; Y. Yamashita; A. Endoh; S. Hara; A. Kasamatsu; I. Hosako; H. Hamada; T. Kosugi; M. Yaita; A. E. Moutaouakil; H. Matsuzaki; O. Kagami; T. Takahashi; Y. Kawano; Y. Nakasha; N. Hara; D. Tsuji; K. Isono; S. Fujikawa; H. I. Fujishiro
2016 IEEE Compound Semiconductor IC Symposium, Oct. 2016
Oct. 2016, English - Poly-InSb nMOSFETs for monolithic 3DIC
Masahiro Takahashi; Toshifumi Irisawa; Wen-Hsin Chang; Junji Tominaga; Sachie Fujikawa; Hiroki I. Fujishiro; Tatsuro Maeda
Solid State Devices and Materials (SSDM2016)
Sep. 2016 - Sep. 2016, English - InSb-based HEMTwith Over 300 GHz-fT using Al0.25In0.75Sb/Al0.15In0.85Sb stepped buffer layer for strain reduction
S. Fujikawa; K. Isono; Y. Harada; I. Watanabe; Y. Yamashita; A. Endoh; S. Hara; A. Kasamatsu; H. I. Fujishiro
19th International Conference on Molecular Beam Epitaxy (MBE2016)
Sep. 2016 - Sep. 2016, English - Electron Transport Properties of InSb/GaInSb Composite Channel
S. Fujikawa; J. Takeuchi; Y. Harada; H. I. Fujishiro
19th International Conference on Molecular Beam Epitaxy (MBE2016)
Sep. 2016 - Sep. 2016, English - Electron transport properties of novel InSb/GaInSb composite channel high electron mobility transistor structures
J. Takeuchi; S. Fujikawa; Y. Harada; H. I. Fujishiro
35rd Electronic Materials Symposium (EMS35)
Jul. 2016 - Jul. 2016 - InSb HEMT with over 300 GHz-fT using stepped buffer layer for strain reduction
S. Fujikawa; K. Isono; Y. Harada; I. Watanabe; Y. Yamashita; A. Endoh; S. Hara; A. Kasamatsu; H. I. Fujishiro
35rd Electronic Materials Symposium (EMS35)
Jul. 2016 - Jul. 2016 - Growth of GaSb Dots Nucleation Layer and Thin -Film GaSb on Si(100) Substrate by Molecular Beam Epitaxy
Ryuto Machida; Ryusuke Toda; SachieFujikawa; Shinsuke Hara; Issei Watanabe; Kouichi Akahane; Akifumi Kasamatsu; Hiroki I. Fujishiro
The 43rd International Symposium on Compound Semiconductors (ISCS) 2016
Jun. 2016 - Jun. 2016, English - Comparative Study on Noise Characteristics of As and Sb-based HEMTs
Takuto Takahashi; Shota Hatsushiba; Sachie Fujikawa; Hiroki I. Fujishiro
The International Conference on Indium Phosphide and Related Materials (IPRM) 2016
Jun. 2016 - Jun. 2016, English - InSb-based HEMT with Over 300 GHz-fT using Evaporated SiOx Film
K. Isono; D. Tsuji; T. Taketsuru; S. Fujikawa; I. Watanabe; Y. Yamashita; A. Endoh; S. Hara; A. Kasamatsu; H. I. Fujishiro
The International Conference on Indium Phosphide and Related Materials (IPRM) 2016
Jun. 2016 - Jun. 2016, English - 蒸着 SiOx 膜を用いた fT = 300GHz 超 InSb-HEMT の作 製
辻 大介; 磯野 恭佑; 竹鶴 達哉; 藤川 紗千恵; 渡邊 一世; 山下 良美; 遠藤 聡; 原 紳介; 笠松 章史; 藤代 博記
Mar. 2016 - 高密度4GaSbドットを用いた Si(100) 基板上のGaSb 薄膜成長
町田 龍人; 戸田 隆介; 藤川 紗千恵; 原 紳介; 渡邊 一世; 赤羽 浩一; 笠松 章史; 藤代 博記
Mar. 2016 - In1-xGaxSb 量子井戸構造の電気的特性の評価
原田 義彬; 岡 直希; 藤川 紗千恵; 藤 代 博記
Mar. 2016 - 3 次元 IC に向けた多結晶 InSb MOSFET の電気特性評価
高橋 正紘; 藤川 紗千恵; 藤代 博記; 入沢 寿史; 富永 淳二; 前田 辰郎
Mar. 2016 - SLS回数と成長温度の最適化による InSb-HEMT 構造の 電気的特性向上
加藤 三四郎; 宮下 愛理; 藤川 紗千恵; 藤代 博記
Mar. 2016 - DEPENDENCE OF InSb/GaSb FILMS GROWN ON FLAT AND VICINAL GaAs (100) SUBSTRATES
S. Fujikawa; H. Suzuki; H. I. Fujishiro
31st NORTH AMERICAN MOLECULAR BEAM EPITAXY CONFRENCE (31th NAMBE)
Oct. 2015 - Oct. 2015, English - ナノスケールIII‐V HEMTの雑音解析
高橋 択斗; 初芝 正太; 藤川 紗千恵; 藤代 博記
Sep. 2015 - 3次元ICに向けた多結晶InSb薄膜の電気特性評価
高橋 正紘; 藤川 紗千恵; 藤代 博記; 入沢 寿史; 富永 淳二; 前田 辰郎
Sep. 2015 - Al/Si(111)-√3×√3表面再構成構造上GaSb初期成長過程の温度依存性
緒方 悟公; 町田 龍人; 石井 達也; 藤川 紗千恵; 原 紳介; 色川 勝己; 三木 裕文; 河津 璋; 藤代 博記
Sep. 2015 - InGaSbヘテロエピタキシャル薄膜の膜質評価
原 紳介; 渡邊 一世; 竹鶴 達哉; 辻 大介; 藤川 紗千恵; 藤代 博記; 赤羽 浩一; 笠松 章史
Sep. 2015 - GaAs(100)基板上のInSb/GaSb結晶のオフ角依存性
鈴木 浩基; 藤川 紗千恵; 藤代 博記
Sep. 2015 - AlInSbステップバッファ層を用いたInSb量子井戸歪緩和構造の電子輸送特性
竹鶴達哉; 藤川紗千恵; 原田義彬; 鈴木浩基; 磯野恭佑; 加藤三四郎; 辻 大介; 藤代博記
Jul. 2015 - Electron transport properties of InGaSb quantum well structure
Y. Harada; K. Isono; T. Taketsuru; H. Suzuki; S. Katou; D. Tsuji; S. Fujikawa; H. I. Fujishiro
34rd Electronic Materials Symposium (EMS34), Jul. 2015 - Formation of GaSb islands on Si(100) with low-temperature grown GaSb layer
R. Machida; R. Toda; S. Fujikawa; S. Hara; H. I. Fujishiro
34rd Electronic Materials Symposium (EMS34), Jul. 2015 - Study on Impacts of Dislocation and Roughness Scatterings on Electron Transport in InSb QW Comparing Monte Carlo Simulation and Measurements
Shota Hatsushiba; Sachie Fujikawa; Hiroki Fujishiro
Compound Semiconductor Week 2015, Jul. 2015
English - Growth of GaSb Islands on Si(100) with Low-temperature Grown GaSb Layer
Ryuto Machida; Ryusuke Toda; Sachie Fujikawa; Shinsuke Hara; Hiroki Fujishiro
Compound Semiconductor Week 2015 (CSW 2015), Jul. 2015
English - GaSb表面の純窒化プロセスの検討
後藤 高寛; 藤川 紗千恵; 藤代 博記; 小倉 睦郎; 安田 哲二; 前田 辰郎
Mar. 2015 - InSb HEMT作製におけるプロセスダメージの検討
前田 章臣; 辻 大介; 竹鶴 達哉; 藤川 紗千恵; 藤代 博記; 渡邊 一世; 山下 良美; 遠藤 聡; 原 紳介; 笠松 章史
Mar. 2015 - 窒化物LED高効率化のためのナノインプリントとドライエッチングによる微細加工制御技術
鹿嶋行雄; 松浦恵里子; 嶋谷 聡; 小久保光典; 田代貴晴; 大川貴史; 上村隆一郎; 長田大和; 藤川紗千恵; 平山秀樹
Nov. 2014 - 窒素プラズマ処理を施したAl2O3/GaSb MOS構造の特性評価
後藤高寛; 藤川紗千恵; 藤代博記; 小倉睦郎; 安田哲二; 前田辰郎
Sep. 2014 - Ga/Si(100)表面再構成構造上 GaSb 3 次元島の成長形態解析
戸田隆介; 町田龍人; 緒方悟公; 藤川紗千恵; 原紳介; 藤代博記
Sep. 2014 - グレーデッドバッファ層を導入したInSb HEMT構造の作製と評価
竹鶴達哉; 前田章臣; 辻大介; 藤川紗千恵; 藤代博記
Sep. 2014 - 貫通転位がInSb HEMTの特性に与える影響の解析
初芝正太; 長井彰平; 藤川紗千恵; 原紳介; 遠藤聡; 渡邊一世; 笠松章史; 藤代博記
Sep. 2014 - Improved Electron Transport Properties of InSb-QW Structure Using Stepped Buffer Layer for Strain Reduction
S. Fujikawa; D. Tsuji; T. Taketsuru; T. Maeda; H. I. Fujishiro
18th International Conference on Molecular Beam Epitaxy(MBE2014)
Sep. 2014 - Sep. 2014, English - 貫通転位がInSb HEMTのデバイス特性に与える影響の解析
初芝正太; 長井彰平; 藤川紗千恵; 原紳介; 遠藤聡; 渡邊一世; 笠松章史; 藤代博記
Aug. 2014 - III-V DG MOSFETにおける遅延時間の発生メカニズムの解析
矢島悠貴; 大濱諒子; 藤川紗千恵; 藤代博記
Aug. 2014 - Comparison of delay times in III-V MOSFETs with various channel materials
Y. Yajima; R. Ohama; S. Fujikawa; H. I. Fujishiro
33rd Electronic Materials Symposium (33rd EMS), Jul. 2014
Jul. 2014 - Jul. 2014 - Improved electron transport characteristic of InSb-QW structure with Al0.25In0.75Sb / Al0.15In0.85Sb stepped buffer layer for strain reduction
T. Taketsuru; D. Tsuji; T. Maeda; S. Fujikawa; H. I. Fujishiro
33rd Electronic Materials Symposium (33rd EMS)
Jul. 2014 - Jul. 2014 - Characterization of InSb-QW structures with Al0.25In0.75Sb / Al0.15In0.85Sb buffer layer for strain reduction
S. Fujikawa; Y. Takagi; T. Maeda; T. Taketsuru; D. Tsuji; H. I. Fujishiro
38th Workshop on Compound Semiconductor Devices and Integrated Circuits (38th WOCSDICE), Jun. 2014
English, Oral presentation - Analysis of Delay Times in III-V MOSFETs with Various Channel Materials
Ryoko Ohama; Yuki Yajima; Akio Nishida; Sachie Fujikawa; Hiroki I. Fujishiro
The 41st International Symposium on Compound Semiconductor (ISCS 2014)
May 2014 - May 2014, English - ラフネス・転位散乱がInSb HEMTの特性に与える影響の解析
初芝正太; 長井彰平; 永井佑太郎; 藤川紗千恵; 原紳介; 遠藤聡; 渡邊一世; 笠松章史; 藤代博記
Mar. 2014 - 各種チャネル材料を用いたIII-V DG MOSFETの遅延時間解析
矢島悠貴; 大濱諒子; 西田明央; 藤川紗千恵; 藤代博記
Mar. 2014 - 歪緩和AlInSbバッファー層を用いたInSb-HEMT構造の作製と評価
藤川紗千恵; 高木裕介; 前田章臣; 古仲佑太朗; 原紳介; 渡邉一世; 遠藤聡; 山下良美; 笠松章史; 藤代博記
Mar. 2014 - ナローバンドギャップデバイス応用にむけたInAsxSb1-x結晶の作製と特性評価
藤川紗千恵; 高木裕介; 前田章臣; 藤代博記
Mar. 2014 - Demonstration of Ni-GaSb metal S/D GaSb pMOSFETs with vacuum annealing on GaAs substrates
T. Gotow; S. Fujikawa; Hiroki I. Fujishiro; M. Ogura; T. Yasuda; T. Maeda
44th IEEE Semiconductor Interface Specialists Conference(SISC)
Dec. 2013 - Dec. 2013, English - 各種チャネル材料を用いたナノスケールHEMTの周波数限界
長井彰平; 永井佑太郎; 藤川紗千恵; 原紳介; 遠藤聡; 渡邊一世; 笠松章史; 藤代博記
Sep. 2013 - Sep. 2013 - 各種チャネル材料を用いたIII-V DG MOSFETの特性解析
大濱 諒子; 西田 明央; 藤川 紗千恵; 藤代 博記
Sep. 2013 - Sep. 2013 - GaSbショットキー接合型メタルS/D pMOSFETsの動作実証
後藤高寛; 藤川紗千恵; 藤代博記; 小倉睦郎; 安田哲二; 前田辰郎
Sep. 2013 - Sep. 2013 - Frequency Limits of Nanoscale HEMTs with Various Channel Materials
S. Nagai; Y. Nagai; S. Fujikawa; H. I. Fujishiro; S. Hara; A. Endoh; I. Watanabe; A. Kasamatsu
10th Topical Workshop on Heterostructure Microelectronics (THWM 2013)
Sep. 2013 - Sep. 2013, English - 真空アニール法がAl2O3/GaSb MOS界面に与える影響
後藤 高寛; 藤川紗千恵; 藤代 博記; 小倉 睦郞; 安田哲二; 前田 辰郎
Aug. 2013 - Aug. 2013 - Ga/Si(111)表面再構成構造を用いたSi(111)基板上GaSbナノ構造の形成
町田 龍人; 戸田 隆介; 吉木 圭祐; 藤川 紗千恵; 原 紳介; 色川 勝己; 三木 裕文; 河津 璋; 藤代 博記
Aug. 2013 - Aug. 2013 - AlGaN-based Deep-UV LEDs Fabricated on Connected-Pillar AlN Buffer
H. Hirayama; Y. Tomita; S. Toyoda; S. Fujikawa; N. Kamata
The 10th Conference on Lasers and Electro-Optics Pacific Rim, and The 18th Opto Electronics and Communications Conference/Photonics in Switching 2013 (CLEO-PR & OECC/PS 2013)
Jun. 2013 - Jul. 2013 - Recent progress of AlGaN based deep-UV LEDs
S. Fujikawa; N. Kamata; H. Hirayama
E-MRS(European Materials Research Society) 2013 Spring Meeting, [Invited]
May 2013 - May 2013, English, Invited oral presentation - Realization of High-Efficiency Deep-UV LEDs using transparent p-AlGaN Contact Layer
Noritoshi Maeda; Sachie Fujikawa; Hideki Hirayama
Compound Semiconductor Week(CSW 2013),IPRM 2013(The 25th International Conference on Indium Phosphide and Related Materials)
May 2013 - May 2013, English - 深紫外LEDバッファー用結合ピラーAlNの結晶成長
富田優志; 豊田史朗; 藤川紗千恵; 鎌田憲彦; 平山秀樹
Mar. 2013
Mar. 2013 - Mar. 2013 - 結合ピラーAlNバッファーを用いた高効率深紫外LEDの検討
富田優志; 豊田史朗; 藤川紗千恵; 鎌田憲彦; 平山秀樹
Mar. 2013 - Mar. 2013 - p-AlGaN透明コンタクト層を用いた深紫外LEDの高効率化の実現
前田哲利; 藤川紗千恵; 平山秀樹
Mar. 2013 - Mar. 2013 - 結合ピラーAlNバッファーを用いた高効率深紫外LEDの開拓
富田優志; 藤川紗千恵; 豊田史朗; 鎌田憲彦; 平山秀樹
Dec. 2012 - p-AlGaN透明コンタクト層を用いた高効率深紫外LEDの検討
前田哲利; 藤川紗千恵; 水澤克哉; 平山秀樹
Dec. 2012 - フォトニックナノ構造を用いた深紫外LEDの高効率化
藤川紗千恵; 平山秀樹
Dec. 2012 - AlGaN深紫外LEDの高効率化への取り組み
富田優志; 藤川紗千恵; 水澤克哉; 豊田史朗; 鎌田憲彦; 平山秀樹
Nov. 2012 - 結合ピラーAlNバッファーを用いた高効率深紫外LEDの検討
富田優志; 藤川紗千恵; 豊田史朗; 鎌田憲彦
Nov. 2012 - p-AlGaN透明コンタクト層を用いた高効率深紫外LEDの検討
前田哲利; 藤川紗千恵; 水澤克哉; 平山秀樹
Nov. 2012 - 多重量子障壁を用いた230nm帯短波長・高効率深紫外LEDの実現
平山秀樹; 藤川紗千恵; 鎌田憲彦
Nov. 2012 - 220-350nm帯AlGaN系深紫外LEDのこれまでの進展
平山秀樹; 藤川紗千恵; 前田哲利; 富田優志; 水澤克哉; 豊田史朗; 鎌田憲彦
Nov. 2012 - 深紫外LEDバッファー用結合ピラーAlNの結晶成長技術の開拓
富田優志; 藤川紗千恵; 豊田史朗; 鎌田憲彦; 平山秀樹
Nov. 2012 - 2次元フォトニック結晶を用いた深紫外LEDの高効率化
藤川紗千恵; 平山秀樹
Nov. 2012 - Improvement of light extraction efficiency of AlGaN deep-UV LED using 2-dimensional photonic crystal (2D-PhC)
S.Fujikawa; H. Hirayama; Y. Kashima; H. Nishihara; T. Tashiro; T. Ohkawa; S. W. Youn; H. Takagi
International Workshop on Nitride Semiconductors 2012 (IWN2012)
Oct. 2012 - Oct. 2012, English - フォトニック結晶を用いたAlGaN系深紫外LEDの高効率化
藤川紗千恵; 平山秀樹; 鹿嶋 行雄; 西原 浩巳; 田代 貴晴; 大川 貴史; 尹成圓; 高木秀樹
Sep. 2012 - Sep. 2012 - Development of Deep-UV LEDs using AlGaN Semiconductors”, 8th Interdisciplinary Exchange Evening
Hideki Hirayama; Sachie Fujikawa; Noritoshi Maeda
Aug. 2012 - Improvement of light extraction efficiency of AlGaN deep-UV LED using 2-dimensional photonic crystal (2D-PhC)
S.Fujikawa; H. Hirayama; Y. Kashima; H. Nishihara; T. Tashiro; T. Ohkawa; S. W. Youn; H. Takagi
4th International Symposium on Growth of III-Nitrides (ISGN-4)
Jul. 2012 - Jul. 2012, English, Oral presentation - Progress of Deep-UV LEDs using AlGaN-based semiconductors
S.Fujikawa; N.Kamata; H.Hirayama
The 2nd RIKEN-McGill University Scientific Workshop
Apr. 2012 - Apr. 2012 - 220-350nm帯AlGaN系深紫外LEDの最近の進展
平山秀樹; 秋葉雅弘; 藤川紗千恵; 鎌田憲彦
Dec. 2011 - マイクロステップ制御による深紫外LEDの作製
藤川紗千恵; 平山秀樹; 前田哲利
Dec. 2011 - Si基板上InAlGaN系深紫外LEDの進展
藤川紗千恵; 平山秀樹
Dec. 2011 - a軸およびm軸傾斜サファイア基板上に作製した高効率AlGaN深紫外LED
藤川紗千恵; 前田哲利; 平山秀樹
Dec. 2011 - m軸およびa軸オフ角 C面サファイア基板上のAlN結晶成長の特徴と高出力AlGaN深紫外LEDの作製
前田 哲利; 藤川 紗千恵; 平山 秀樹
Nov. 2011
Nov. 2011 - Nov. 2011 - Enhancement of Light Extraction Efficiency of Deep UV-LEDs using Photonic Nano-structures
S.Fujikawa; H.Hirayama; Y.Kajima
The 2011 Nano Science Joint Laboratory Form, RIKEN, Nov. 2011 - AlGaN系高効率深紫外LEDの開発
藤川紗千恵
Oct. 2011 - AlGaN系深紫外LEDの注入効率と光取り出し効率の高効率化
秋葉雅弘; 平山秀樹; 藤川紗千恵; 鎌田憲彦
Aug. 2011 - InAlGaN4元混晶からの深紫外高IQEの観測と殺菌波長帯高出力LEDの実現
藤川紗千恵; 平山 秀樹
Aug. 2011 - Marked Increase of Injection Efficiency in AlGaN Deep-UV LEDs using MQB
H. Hirayama; Y. Tsukada; M. Akiba; Y. Tomita; S.Fujikawa; N. Maeda; N. Kamata
9th International Conference on Nitride Semiconductors (ICNS-9), Jul. 2011
English - High-Efficiency AlGaN Deep-UV LEDs fabricated on a- and m-axis oriented c-plane sapphire substrates
S. Fujikawa; H. Hirayama; N. Maeda
9th International Conference on Nitride Semiconductors (ICNS-9), Jul. 2011
English, Oral presentation - 窒化物半導体を用いた深紫外LEDの開発
藤川紗千恵; 平山秀樹
Jun. 2011, [Invited]
Japanese, Invited oral presentation - 殺菌への実用を目指したSi基板上深紫外LEDの実現
藤川紗千恵; 平山秀樹
Jun. 2011 - High-Efficiency AlGaN Deep-UV LEDs fabricated on a- and m-axis oriented c-plane sapphire substrates
S. Fujikawa; H. Hirayama; N. Maeda
5th Asia-Pacific Workshop on Widegap Semiconductors(APWS-2011), May 2011
English - a軸方向傾斜c面サファイア上に作製した高効率深紫外LED
藤川紗千恵; 平山秀樹; 前田 哲利
Mar. 2011 - Si基板上280nm帯InAlGaN深紫外LED
藤川紗千恵; 平山秀樹
Nov. 2010 - InAlGaN4元混晶を用いた280nm帯殺菌用途深紫外LEDの進展
藤川紗千恵; 平山秀樹
Nov. 2010 - First Achievement of Deep-UV LED on Si substrate"
S. Fujikawa; H. Hirayama
2010 IEEE International Semiconductor Laser Conference
Sep. 2010 - Sep. 2010, English - Realization of InAlGaN-based deep UV LEDs on Si (111) substrates
S. Fujikawa; H. Hirayama
International Workshop on Nitride semiconductors (IWN2010)
Sep. 2010 - Sep. 2010, English - Si基板上280nm帯InAlGaN深紫外LED
藤川紗千恵; 平山秀樹
Sep. 2010 - 280nm-band InAlGaN deep-UV LED on Silicon (111) substrate
S. Fujikawa; H. Hirayama
Third International Symposium on Growth of Ⅲ-Nitrides(ISGN-3), Jul. 2010
English - Si基板上280nm帯InAlGaN深紫外LEDの実現
藤川紗千恵; 平山秀樹
May 2010 - InAlGaN４元混晶を用いた高出力深紫外LEDの実現
藤川紗千恵
Apr. 2010 - Growth of AlN with Low Threading Dislocation Density on Sapphire Fabricated by controlling AlN Nuclei using 2inch x 3 MOCVD System
T. Takano; H. Hirayama; S. Fujikawa; K. Tsubaki
8th International Coference on Nitride Semiconductors (ICNS-8), Oct. 2009
English - Achievement of High-quality Quaternary InAlGaN Quantum Wells for Deep-UV LEDs by using Quite Low Growth Rate Epitaxy
S. Fujikawa; H. Hirayama; T. Takano; K. Tsubaki
8th International Conference on Nitride Semiconductors (ICNS-8), Oct. 2009
English - 2"×3 MOCVDを用いた核形成層制御によるサファイア基板上AlNの高品質化
高野隆好; 藤川紗千恵; 平山秀樹; 椿健治
Sep. 2009 - Sep. 2009 - In混入AlGaNの発光およびp型特性と高効率深紫外LEDへの応用
平山秀樹; 藤川紗千恵; 塚田悠介; 乗松潤; 高野隆好; 野口憲路; 椿健治; 鎌田憲彦
Sep. 2009 - Siドーピングによる250nm帯InドープAlGaN量子井戸LED高効率化の検討
塚田悠介; 藤川紗千恵; 平山秀樹; 乗松潤; 鎌田憲彦
Sep. 2009 - 280nm帯紫外LEDにおけるInAlGaNの極低速成長の重要性
藤川紗千恵; 平山秀樹; 高野隆好; 椿健治
Sep. 2009 - モジュレーションドープInAlGaN量子井戸発光層を用いた高出力280nm帯紫外LEDの実現
藤川紗千恵; 平山秀樹; 高野隆好; 椿健治
Aug. 2009 - 高Al組成InAlGaN4元混晶の結晶成長と250nm帯深紫外高効率LEDの実現
塚田悠介; 平山秀樹; 藤川紗千恵; 野口憲路; 鎌田憲彦
May 2009 - 大周期ストライプを用いた深紫外LED用ELO-AlNテンプレートの貫通転位の低減
藤川紗千恵; 乗松潤; 平山秀樹; 野口憲路; 鎌田憲彦
May 2009 - 低速成長による高Al組成InAlGaN4元混晶の高品質結晶成長・評価と280nm帯深紫外高出力LEDの実現
藤川紗千恵; 平山秀樹; 高野隆好; 椿健治
May 2009 - InAlGaN四元混晶半導体を用いた深紫外発光量子ドットの作製
高野隆好; 藤川紗千恵; 平山秀樹; 杉山正和
Mar. 2009 - 250nm帯InAlGaN量子井戸紫外LEDのサブミリワット出力動作
塚田悠介; 平山秀樹; 藤川紗千恵; 野口憲路; 鎌田憲彦
Mar. 2009 - 222-282nm AlGaN and InAlGaN based deep-UV LEDs fabricated on high-quality AlN template
H. Hirayama; N. Noguchi; S. Fujikawa; J. Norimatsu; T. Takano; K. Tsubaki; N. Kamata
SPIE Photonics West 2009, Jan. 2009, [Invited]
English, Invited oral presentation - 280nm帯InAlGaN高出力紫外LED
平山秀樹; 藤川紗千恵; 高野隆好; 椿健治
Nov. 2008 - ELO-AlNテンプレート上に作製した270nm帯AlGaN紫外LED
乗松潤; 平山秀樹; 野口憲路; 藤川紗千恵; 高野隆好; 椿健治; 鎌田憲彦
Nov. 2008 - Realization of 270 nm Band AlGaN Based UV-LED on Large Area AlN Template with High Crystalline Quality
T. Takano; S. Fujikawa; K. Tsubaki; H. Hirayama
International Workshop on Nitride Semiconductors 2008 (IWN2008)
Oct. 2008 - Oct. 2008, English - Milliwatt power 270 nm-band AlGaN deep-UV LEDs fabricated on ELO-AlN template
J. Norimatsu; H. Hirayama; N. Noguchi; S. Fujikawa; T. Takano; K. Tsubaki; N. Kamata
International Workshop on Nitride Semiconductors 2008 (IWN2008)
Oct. 2008 - Oct. 2008, English, Oral presentation - 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire
H. Hirayama; S. Fujikawa; N. Noguchi; T. Yatabe; T. Takano; K. Tsubaki; N. Kamata
International Workshop on Nitride Semiconductors 2008 (IWN2008), [Invited]
Oct. 2008 - Oct. 2008, English, Invited oral presentation - Fabrication of low threading dislocation density ELO-AlN template for the application to deep-UV LEDs
H. Hirayama; S. Fujikawa; J. Norimatsu; T. Takano; K. Tsubaki; N. Kamata
International Workshop on Nitride Semiconductors 2008 (IWN2008)
Oct. 2008 - Oct. 2008, English - Extremely high efficiency 280 nm-band emission from quaternary InAlGaN QWs realized by controlling Si-doped layers
S. Fujikawa; H. Hirayama; T. Takano; K. Tsubaki
International Workshop on Nitride Semiconductors 2008 (IWN2008)
Oct. 2008 - Oct. 2008, English, Oral presentation - ELO-AlNテンプレート上に作製した270nm帯AlGaN-LEDのCWミリワット出力動作
乗松潤; 平山秀樹; 野口憲路; 藤川紗千恵; 高野隆好; 椿健治; 鎌田憲彦
Sep. 2008 - SiモジュレーションドープInAlGaN発光層を用いた280nm帯紫外LEDの10mW出力動作
藤川紗千恵; 平山秀樹; 高野隆好; 椿健治
Sep. 2008 - 紫外LED用低貫通転位密度ELO-AlNテンプレートの作製
平山秀樹; 藤川紗千恵; 乗松潤; 高野隆好; 椿健治; 鎌田憲彦
Sep. 2008 - High-efficiency 280 nm-band InAlGaN quantum well deep-UV LEDs with Si-doped barrier layers
S. Fujikawa; H. Hirayama; T. Takano; K. Tsubaki
27thElectronic Materials Symposium (EMS-27), Jul. 2008
Jul. 2008 - Jul. 2008 - 270 nm-band AlGaN deep-UV LEDs fabricated on ELO-AlN buffer
J. Norimatsu; H. Hirayama; T. Takano; S. Fujikawa; N. Noguchi; K. Tsubaki; N. Kamata
27thElectronic Materials Symposium (EMS-27)
Jul. 2008 - Jul. 2008 - Extremely high efficiency PL emission from 280 nm-band InAlGaN QWs realized by Si-doped layer control
S. Fujikawa; H. Hirayama; T. Takano; K. Tsubaki
Second International Symposium on Growth of III-Nitrides (ISGN-2), Jul. 2008
English, Oral presentation - 280 nm-Band Quaternary InAlGaN Quantum Well Deep-UV LEDs with p-InAlGaN Layers
S. Fujikawa; H. Hirayama; T. Takano; K. Tsubaki
International Symposium on Semiconductor Light Emitting Devices 2008 (ISSLED2008), May 2008
English, Oral presentation - 量産対応型MOCVDによる270nm帯高出力深紫外LEDの検討
高野隆好; 藤川紗千恵; 椿健治; 平山秀樹
Mar. 2008 - InAlGaN 4元混晶を用いた280nm帯深紫外LED
藤川紗千恵; 平山秀樹; 高野隆好; 椿健治
Mar. 2008 - p-InAlGaNと高品質AlNを用いた340nm帯紫外高出力LED
藤川紗千恵; 高野隆好; 椿健治; 平山秀樹
Dec. 2007 - Realization of 340nm-band high-power UV-LED using p-type InAlGaN
S. Fujikawa; T. Takano; Y. Kondo; H. Hirayama
First International Conference on White LEDs and Solid State Lighting (White LEDs-07), Nov. 2007
English, Poster presentation - 340nm-band High-power (>7 mW) InAlGaN Quantum Well UV-LED Using p-type InAlGaN Layers
S. Fujikawa; T. Takano; Y. Kondo; H. Hirayama
The 34th International Symposium on Compound Semiconductors (ISCS2007)
Oct. 2007 - Oct. 2007, English - p-InAlGaN と高品質AlNを用いた340nm帯高出力LED
藤川紗千恵; 高野隆好; 近藤行廣; 平山秀樹
Oct. 2007 - Remarkable Improvement of Output Power for InAlGaN Based Ultraviolet LED by Improving the Crystal Quality of AlN/AlGaN Templates
T. Takano; S. Fujikawa; Y. Kondo and; H. Hirayama
7th Int'l Conference of Nitride Semiconductors (ICNS-7)
Sep. 2007 - Sep. 2007, English - Quaternary InAlGaN Quantum-Dot UV-LED Emitting at 335nm Fabricated by Anti-Surfactant Method
H. Hirayama; S. Fujikawa
7th Int'l Conference of Nitride Semiconductors (ICNS-7)
Sep. 2007 - Sep. 2007, English - 340nm-Band High-Power (>7mW) InAlGaN Quantum Well UV-LED Using p-Type InAlGaN Layers
S. Fujikawa; T. Takano; Y. Kondo; H. Hirayama
7th Int'l Conference of Nitride Semiconductors (ICNS-7)
Sep. 2007 - Sep. 2007, English, Oral presentation - Realization of 340nm-Band High-Power InAlGaN-Based UV-LEDs by the Suppression of Electron Overflow
S. Fujikawa; T. Takano; Y. Kondo; H. Hirayama
7th Int'l Conference of Nitride Semiconductors (ICNS-7)
Sep. 2007 - Sep. 2007, English - Realization of 340nmband high-power (>7mW) InAlGaN quantum well UV-LED with p-type InAlGaN
S. Fujikawa; T. Takano; Y. Kondo; H. Hirayama
2007 International Conference on Solid State Devices and Materials (SSDM2007)
Sep. 2007 - Sep. 2007, English, Oral presentation - 深紫外発光InAlGaN 4元混晶量子ドットの形成と電流注入発光
藤川紗千恵; 平山秀樹
Sep. 2007 - 230-350nm窒化物深紫外LEDの進展と今後の展望
平山秀樹; 谷田部透; 野口憲路; 藤川紗千恵; 高野隆好; 鎌田憲彦; 近藤行廣
Sep. 2007
Invited oral presentation - Remarkable Improvement of Output Power for InAlGaN based UV LED by Improving Crystal Quality of AlN/AlGaN Template
T. Takano; S. Fujikawa; Y. Kondo; H. Hirayama
6thElectronic Materials Symposium (EMS-26)
Jul. 2007 - Jul. 2007 - Realization of 340nm-band high-power UV-LED using p-type InAlGaN
S. Fujikawa; T. Takano; Y. Kondo; H. Hirayama
26thElectronic Materials Symposium (EMS-26), Jul. 2007 - AlN/AlGaNテンプレート改善による高出力InAlGaN紫外LEDの実現
高野隆好; 藤川紗千恵; 近藤行廣; 平山秀樹
Mar. 2007 - p型InAlGaN4元混晶を用いた340nm帯高出力紫外LEDの実現
藤川紗千恵; 高野隆好; 近藤行廣; 平山秀樹
Mar. 2007 - 電流注入機構の最適化によるInAlGaN紫外LEDの高出力化
藤川紗千恵; 高野隆好; 近藤行廣; 平山秀樹
Mar. 2007 - InAlGaN窒化物４元混晶を用いた高出力紫外LEDの開発
平山秀樹; 高野隆好; 藤川紗千恵; 大橋智昭; 谷田部透; 鎌田憲彦; 近藤行廣
Dec. 2006 - Remarkable Improvement of Output Power for InAlGaN Based UV-LED by Ni/Au Electrode
T. Takano; H. Hirayama; S. Fujikawa; Y. Kondo
International Workshop on Nitride Semiconductors 2006 (IWN2006)
Oct. 2006 - Oct. 2006, English - AlGaN 系紫外LED のLLO プロセスにおけるKOH エッチング効果
藤川紗千恵; 高野隆好; 平山秀樹; 近藤行廣
Sep. 2006 - Remarkable Increase of UV Emission Efficiency of InAlGaN Quantum Well by using High-quality AlN/AlGaN Buffers
T. Takano; H. Hirayama; S. Fujikawa; Y. Kondo
13th International Conference on Metal Organic Vapor Phase Epitaxy IC-MOVPE-XIII)
May 2006 - May 2006, English - InAlGaN4元混晶紫外LEDの高出力化の検討
高野隆好; 藤川紗千恵; 近藤廣行; 平山秀樹
Mar. 2006 - 330nm帯紫外発光InAlGaN量子井戸からの高い内部量子効率の観測
平山秀樹; 高野隆好; 大橋智昭; 藤川紗千恵; 近藤行廣
Oct. 2005 - Oct. 2005
■ Research projects
- A Study on realizing unexplored frequency and room temperature operation THz-QCL through innovation of inter-subband transition mechanism
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research, Grant-in-Aid for Scientific Research (S), 01 Apr. 2024 - 31 Mar. 2029
Institute of Physical and Chemical Research
Grant amount(Total)：204750000, Direct funding：157500000, Indirect funding：47250000
Grant number：24H00048 - ナローバンドギャップ領域希薄窒化物半導体薄膜の結晶成長技術開拓と物性解析
Apr. 2023 - Mar. 2026
Principal investigator - 狭バンドギャップ半導体を用いた光熱電変換材料の創製
Jun. 2024 - May 2025
Principal investigator - ナローバンドギャップ領域の半導体成長と物性解析
Apr. 2023 - Mar. 2024
Principal investigator - 希薄窒化物半導体のナローバンドギャップ領域の特性解析
Apr. 2022 - Mar. 2024
Principal investigator - Growth and Characterization of Sb-based Dilute Nitride Semiconductors by Sputtering
Dec. 2023
Principal investigator - Growth and Characterization of Sb-based Dilute Nitride Semiconductors by Sputtering
Sep. 2023
Principal investigator - ナローバンドギャップ半導体を用いたヘテロ構造作製と物性解析
Sep. 2021 - Aug. 2023
Principal investigator - ナローバンドギャップ領域の半導体成長と物性解析
Apr. 2022 - Mar. 2023
Principal investigator - 希薄窒化物半導体を用いた遠赤外光デバイスの創製
Jul. 2020 - Mar. 2021
Principal investigator - Development of Ultra-High Performance Sb-Based Teraherts Transistors
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research, Grant-in-Aid for Scientific Research (C), 01 Apr. 2016 - 31 Mar. 2019
Fujishiro Hiroki, Tokyo University of Science
Grant amount(Total)：4810000, Direct funding：3700000, Indirect funding：1110000
We have fabricated the HEMT using the GaInSb quantum well QW channel, in which the electron effective mass me* has been chosen so as to get the larger electron density Ns and the higher electron mobility μe simultaneously under the roughness scattering.
The stepped buffer has allowed to increase Ns keeping μe high. Consequently the Ga0.22In0.78Sb QW has showed μe = 15,500 cm2/Vs and Ns = 2.05×1012 cm-2. The Ga0.22In0.78Sb HEMT has been fabricated. The maximum fT has been 214 GHz（Lg = 40 nm）, which has been the highest value ever reported for the GaInSb transistors.
Grant number：16K06316 - Elucidation of physical properties of Sb-based dilute nitride semiconductor and creation of high brightness far infrared light emitting element
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research, Grant-in-Aid for Scientific Research (C), 01 Apr. 2015 - 31 Mar. 2018
FUJIKAWA Sachie
Grant amount(Total)：4940000, Direct funding：3800000, Indirect funding：1140000
In this study, in order to fabricate an InSbN dilute nitride semiconductor in which nitrogen is introduced into InSb having the smallest energy band gap among III-V semiconductors, InSbN film on a GaAs (001) substrate was fabricated by a metal organic chemical vapor deposition (MOCVD). By changing the flow rate of ammonia which is a material, we confirmed the shift of the spectrum in the 2θ - ω measurement of X - ray diffraction and clarified that the lattice constant becomes small. We found that it is possible to fabricate InSbN crystals and it was found that the narrow band gap can be achieved by controlling the flow rate of ammonia. From these results, we could suggest that far infrared devices are realized.
Grant number：15K05995 - Sb系希薄窒化物半導体を用いた遠赤外線LEDと光検出器の開発
Nov. 2015 - Nov. 2016
Principal investigator - Sb系半導体材料を用いた中赤外発光デバイスの研究
Oct. 2015 - Sep. 2016
Principal investigator - Sb系半導体材料を用いた中赤外線発光素子に関する研究
Oct. 2015 - Sep. 2016
Principal investigator - Research on vertical-type large-area high-power deep-UV LEDs fabricated on Si substrates
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research, Grant-in-Aid for Scientific Research (A), 01 Apr. 2012 - 31 Mar. 2015
HIRAYAMA Hideki; FUJIKAWA Sachie, The Institute of Physical and Chemical Research
Grant amount(Total)：47060000, Direct funding：36200000, Indirect funding：10860000
The development of high-power deep-ultraviolet light-emitting diodes (DUV-LEDs) is quite an important subject because they are required for a wide variety of applications, such as sterilization, water purification, medicine and biochemistry. However, high-power operation of a DUV-LED fabricated on a sapphire substrate is difficult because of a large series resistance due to a lateral-injection and a low light-extraction efficiency (LEE). The purpose of this work is to realize a high-power DUV-LED by fabricating a vertical-type large-area LED device on a silicon (Si) substrate.
We demonstrated high-quality AlN buffer layers with no surface cracks by fabricating them on patterned Si substrates. We obtained milli-watt power operations of DUV-LEDs fabricating on the high-quality AlN layer grown on the patterned substrates. We also achieved significant increase of LEE of DUV LED by introducing a transparent p-type AlGaN contact layer and a highly-reflective electrode.
Grant number：24246010 - Recent progress of AlGaN based deep-UV LEDs
Feb. 2013
Principal investigator - Development of deep ultraviolet LED and LD on nitride semiconductor
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research, Grant-in-Aid for Young Scientists (B), 2010 - 2011
FUJIKAWA Sachie, The Institute of Physical and Chemical Research
Grant amount(Total)：4290000, Direct funding：3300000, Indirect funding：990000
I demonstrated high-efficiency 270nm band AlGaN based deep-ultraviolet(DUV) LEDs grown by low-pressure metal-organic chemical-vapor deposition(LP-MOCVD). The high efficiency DUV-LEDs were achieved by using a-axis oriented c-plane sapphire substrates in order to obtain a high quality AlN, introducing the light-doping of Si to AlGaN quantum well emitting region, using the multi quantum barriers layer, optimizing the band lineup and so on. As a result, I made found growing the easily good AlN surface. Additionally, the maximum light output power and maximum external quantum efficiency of DUV-LEDs were 33mW and about 4%, respectively.
Grant number：22760017
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