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Search DetailsMIYAKODA Kaito
| Mechanical Science Division | Assistant Professor |
| Department of Mechanical Engineering and System Design |
Researcher information
■ Degree■ Field Of Study
- Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Manufacturing and production engineering
- Apr. 2026 - Present, Saitama University, Graduate School of Science and Engineering, Assistant Professor, Japan
- Apr. 2024 - Mar. 2026, Japan Society for the Promotion of Science, Japan
- Mar. 2023 - Apr. 2026, Chiba University, Graduate School of Science and Engineering, Department of Mechanical Engineering, Japan
- Apr. 2021 - Mar. 2023, Chiba University, Graduate School of Science and Engineering, Department of Mechanical Engineering, Japan
- Apr. 2017 - Mar. 2021, Chiba University, Faculty of Engineering, Department of Mechanical Engineering, Japan
- Mar. 2026, School President Award, Chiba University
Kaito Miyakoda
53352512 - Nov. 2025, Excellent Paper Award, Feasibility study on planarization by electrodeless photoelectrochemical etching with evanescent light
Kaito Miyakoda;Naoto Takahashi;Hirofumi Hidai;Sho Itoh;Souta Matsusaka
53352512 - Oct. 2023, Outstanding Presentation Award, Study on photoelectrochemical (PEC) etching of GaAs using evanescent light, Chiba University
Kaito Miyakoda;Hirofumi Hidai;Sho Itoh;Souta Matsusaka - Mar. 2023, School President Award, Chiba University
Kaito Miyakoda - Mar. 2023, Best Article Award for Student Articles, The Japan Society for Precision Engineering
Performance information
■ Paper- Demonstration of selective depth controllability in photoelectrochemical etching using evanescent light
Kaito MIYAKODA; Naoto TAKAHASHI; Hirofumi HIDAI; Sho ITOH; Souta MATSUSAKA
Journal of the Japan Society for Abrasive Technology, Volume:70, Number:7, First page:400, Last page:407, Jul. 2026, [Reviewed], [Lead], [Domestic magazine]
We propose a novel depth-selective photoelectrochemical (PEC) etching method using evanescent light. Evanescent light is localized near the total-internal-reflection interface. We propose this localization can be applied to control the etch depth. To demonstrate the concept, we etched a GaAs wafer with a pre-existing groove. When using evanescent light, areas with groove depths greater than 0.2 µm were left largely unetched, because of the localization. In contrast, propagating light etched uniformly, regardless of the groove depth. This result demonstrates that evanescent light-based PEC etching selectively removes material only near the interface.
Japanese, Scientific journal
DOI:https://doi.org/10.11420/jsat.25-00022
DOI ID:10.11420/jsat.25-00022, 共同研究・競争的資金等ID:53352512 - Photoelectrochemical etching of semiconductor induced by evanescent light
Kaito Miyakoda; Hirofumi Hidai; Sho Itoh; Souta Matsusaka
Applied Physics A, Volume:131, Number:11, First page:891, Last page:891, Oct. 2025, [Reviewed], [Lead], [International magazine]
Abstract
A novel photoelectrochemical etching method for semiconductor was introduced, utilizing evanescent light as the source to confine the etching depth. Evanescent light, generated under total internal reflection, is localized near the reflective interface. Since the etching rate correlates with light intensity, the etching profile is determined by the spatial decay of the evanescent field from the interface. Time-resolved measurements revealed that the etching depth is limited to approximately 900 nm from the total internal reflection interface. The shape of the etched cavity reflects the intensity distribution of the evanescent light. In addition, a theoretical model was developed based on the hypothesis that the etching rate is proportional to the light intensity when using evanescent light. The experimental etching results are consistent with this theoretical model. These findings suggest that consistent etching profiles can be achieved regardless of the initial surface morphology under optimized conditions, as the evanescent light intensity distribution is independent of surface topography. This etching technology has the potential to enable non-contact or zero-defect surface flattening.
Springer Science and Business Media LLC, English, Scientific journal
DOI:https://doi.org/10.1007/s00339-025-09024-6
DOI ID:10.1007/s00339-025-09024-6, ISSN:0947-8396, eISSN:1432-0630, 共同研究・競争的資金等ID:53352512 - Curved hole drilling by laser manipulation of a heat spot inside glass
Kaito Miyakoda; Koki Sunayama; Kosuke Sakamoto; Daijiro Tokunaga; Hirofumi Hidai; Souta Matsusaka
Precision Engineering, Volume:81, First page:1, Last page:7, May 2023, [Reviewed], [Lead], [International magazine]
Elsevier BV, English, Scientific journal
DOI:https://doi.org/10.1016/j.precisioneng.2023.01.008
DOI ID:10.1016/j.precisioneng.2023.01.008, ISSN:0141-6359 - Soret effect in metal-particle doped glass by focused laser heating
Kaito Miyakoda; Sho Itoh; Hirofumi Hidai; Souta Matsusaka
Laser-based Micro- and Nanoprocessing XVII, First page:46, Last page:46, Mar. 2023, [Lead], [International magazine]
SPIE, English, International conference proceedings
DOI:https://doi.org/10.1117/12.2651075
DOI ID:10.1117/12.2651075 - Surface Profile Transfer Using Light Leaked from Cylindrical Surface of Glass Fiber
Yutaka Monma; Kaito Miyakoda; Hirofumi Hidai; Souta Matsusaka
Journal of the Japan Society for Precision Engineering, Volume:89, Number:1, First page:127, Last page:132, Jan. 2023, [Reviewed], [Domestic magazine]
Japan Society for Precision Engineering, Japanese, Scientific journal
DOI:https://doi.org/10.2493/jjspe.89.127
DOI ID:10.2493/jjspe.89.127, ISSN:0912-0289, eISSN:1882-675X
- The Professional Designer's Works of Refuse Trucks
精密工学会学生編集委員WG0
Journal of the Japan Society for Precision Engineering, Volume:88, Number:1, First page:38, Last page:43, 05 Jan. 2022
公益社団法人 精密工学会, Japanese
DOI:https://doi.org/10.2493/jjspe.88.38
DOI ID:10.2493/jjspe.88.38, ISSN:0912-0289, eISSN:1882-675X
- フッ化カルシウムの3次元レーザスライシング
松山優斗; 都田海人; 山田洋平; 池野順一
Sep. 2026
Sep. 2026 - Sep. 2026, Japanese, Oral presentation - Delamination of GaN Thin Films Using the Crack-Chain Method
Kohei UCHIDA; Ryohei ENDO; Kaito MIYAKODA; Yohei YAMADA; Junichi IKENO
ABTEC2026, Sep. 2026, [Domestic conference]
Aug. 2026 - Sep. 2026, Japanese, Oral presentation, Sendai, Japan - 研磨炭に学ぶ異方性砥石作製の試み ~マイクロハニカム構造の試作~
原 幸汰; 笹沼 彩冬; 都田 海人; 山田 洋平; 池野 順一
Aug. 2026, [Domestic conference]
Aug. 2026 - Sep. 2026, Japanese, Oral presentation, Japan - The effect of polarization in photoelectrochemical etching induced by evanescent light
Kaito Miyakoda; Hirofumi Hidai; Souta Matsusaka
Mar. 2026, [Domestic conference]
Mar. 2026 - Mar. 2026, Japanese, Oral presentation, Saitama, Japan - Feasibility study on planarization by electrodeless photoelectrochemical etching with evanescent light
Kaito Miyakoda; Naoto Takahashi; Hirofumi Hidai; Sho Itoh; Souta Matsusaka
The 27th International Symposium on Advances in Abrasive Technology (ISAAT2025), Nov. 2025, [International conference]
Nov. 2025 - Nov. 2025, English, Oral presentation, Numazu, Japan
共同研究・競争的資金等ID:53352512 - Demonstration of the electrodeless photoelectrochemical etching with evanescent light
Kaito Miyakoda; Hirofumi Hidai; Sho Itoh; Souta Matsusaka
Progress in Ultrafast Laser Modifications of Materials(PULMM2025), Jun. 2025, [International conference]
Jun. 2025 - Jul. 2025, English, Poster presentation, Villars-sur-Ollon, Switzerland
共同研究・競争的資金等ID:53352512 - Demonstration of etch depth limitation by evanescent-light-assisted etching of n-GaAs
Kaito Miyakoda; Hirofumi Hidai; Sho Itoh; Souta Matsusaka
Lasers in Manufacturing 2025 (LiM 2025), Jun. 2025, [International conference]
Jun. 2025 - Jun. 2025, English, Oral presentation, Munich, Germany
共同研究・競争的資金等ID:53352512 - Study on photoelectrochemical (PEC) etching of GaAs using evanescent light
Kaito Miyakoda; Hirofumi Hidai; Sho Itoh; Souta Matsusaka
Abrasive Technology Conference (ABTEC2023, Aug. 2023, [Domestic conference]
Aug. 2023 - Aug. 2023, Japanese, Oral presentation, Yonago, Japan - Feasibility study on fabrication of curved hole using fiber fuse with laser scanning
Kaito Miyakoda; Hirofumi Hidai; Sho Itoh; Souta Matsusaka
Progress in Ultrafast Laser Modification of Materials (PULMM2023), Jun. 2023, [International conference]
Jun. 2023 - Jun. 2023, English, Poster presentation, Nikko, Japan - Soret effect in metal particle doped glass by focused laser heating
Kaito Miyakoda; Hirofumi Hidai; Sho Itoh; Souta Matsusaka
SPIE Photonics West 2023, Feb. 2023, [International conference]
Jan. 2023 - Feb. 2023, English, Oral presentation, San Francisco, United States - Curved hole drilling in silica glass by fiber fuse with a scanned laser beam
Kaito Miyakoda; Koki Sunayama; Kosuke Sakamoto; Hirofumi Hidai; Souta Matsusaka
The 19th International Conference on Precision Engineering (ICPE2022), Dec. 2022, [International conference]
Nov. 2022 - Dec. 2022, English, Oral presentation, Nara, Japan - Direction Control of Plasma Running in Glass by Laser Scanning
Kaito Miyakoda; Koki Sunayama; Kosuke Sakamoto; Souta Matsusaka
Oct. 2022, [Domestic conference]
Oct. 2022 - Oct. 2022, Japanese, Oral presentation, Kanazawa, Japan - A Study on the Transfer of Contour Shapes via Etching Using Light Leaking from the Cylindrical Surface of a Glass Rod
Yutaka Monma; Kaito Miyakoda; Hidai Hirofumi; Souta Matsusaka
Mar. 2022, [Domestic conference]
Mar. 2022 - Mar. 2022, Japanese, Oral presentation
■ Affiliated academic society
■ Research projects
- Elucidation of Polarization-Dependent Mechanisms in Evanescent-Light-Induced Etching and Their Application to Process Control
Japan Society for the Promotion of Science (JSPS), Grants-in-Aid for Scientific Research (KAKENHI), Grant-in-Aid for Research Activity Start-up, Jul. 2026 - Mar. 2028
Kaito Miyakoda, Saitama University, Principal investigator
Grant amount(Total):2730000, Direct funding:2100000, Indirect funding:630000
Competitive research funding, Grant number:26K24598 - 局在光を活用したエッチングによる完全平滑表面創製技術の確立
Apr. 2024 - Mar. 2026
Grant amount(Total):1500000, Direct funding:1500000
Competitive research funding, Grant number:24KJ0524
論文ID:54341616, 講演・口頭発表等ID:53398157, 受賞ID:53375509
