Performance information

• Effect of Annealing Treatment on Sensing Response of Inorganic Film Taste Sensor to Sweet Substances
  Tomoki Shinta; Hidekazu Uchida; Yuki Hasegawa
  Sensors, Volume：25, Number：6, First page：1859, Last page：1859, Mar. 2025, [Reviewed]
  The effect of annealing treatment on an inorganic film for taste sensors has not been fully elucidated. In this study, we developed an inorganic film taste sensor using SnO2 as a sensitive film and evaluated the effect of annealing treatment on its sensing response to sweet substances. First, we confirmed from XRD patterns that annealing at 600 °C caused a change in crystal orientation. Next, the taste sensor response to acesulfame potassium solution, which is a high-intensity sweetener and an electrolyte, showed a negative response with high concentration dependence. On the other hand, the sensors exhibited a positive response to non-electrolytes such as aspartame and glucose, with the sensor annealed at 600 °C showing a larger response to non-electrolytes compared to the other sensors. In terms of concentration dependence, the response to aspartame was higher, whereas the response to glucose was lower. Also, a reduction in variability was observed after annealing treatment at 150 °C and 300 °C. This phenomenon was clarified by comprehensively investigating various properties.
  MDPI AG, Scientific journal
  DOI：https://doi.org/10.3390/s25061859
  DOI ID：10.3390/s25061859, eISSN：1424-8220
• Measurement of Acetylcholinesterase Using a Two-dimensional Electrochemical Sensor; LAAS　　　　　　　　　　　　　　　
  Akitsugu Miyairi; Yuki Hasegawa; Hidekazu Uchida
  IEEJ Transactions on Sensors and Micromachines, Volume：143, Number：8, First page：219, Last page：224, Aug. 2023, [Reviewed]
  The Institute of Electrical Engineers of Japan, Japanese, Scientific journal
  DOI：https://doi.org/10.1541/ieejsmas.143.219
  DOI ID：10.1541/ieejsmas.143.219, ISSN：1341-8939, eISSN：1347-5525
• Detection of Hydrophobic Substance by SAM-formed Two-dimensional Electrochemical Sensor　　　　　　　　　　　　　　　
  Takanari Hamano; Yuki Hasegawa; Hidekazu Uchida
  IEEJ Transactions on Sensors and Micromachines, Volume：142, Number：10, First page：278, Last page：283, Oct. 2022, [Reviewed]
  Currently, research on olfactory and taste sensors is being actively conducted, and the demand for molecular recognition is increasing. We have successfully developed an electrochemical sensor called Light Addressable Amperometric Sensor (LAAS). In this study, we used our organic-inorganic hybrid type LAAS with CuPc/n-Si/Al structure to verify its behavior in molecular recognition. As a starting point, we investigated the simplest reaction, hydrophobic bonding, as part of molecular recognition. The gold working electrodes on LAAS were modified by Self-Assembled Monolayer. We evaluated the device in terms of concentration dependency and image measurement. The measurements were carried out using a solution with redox substances and quinine as a hydrophobic substance. As a result, we confirmed the concentration dependence that the LAAS current value increases as the concentration of quinine increases. We also confirmed the reproducibility of the sensor because a device with the same characteristics was successfully fabricated by the same process.
  The Institute of Electrical Engineers of Japan, Japanese, Scientific journal
  DOI：https://doi.org/10.1541/ieejsmas.142.278
  DOI ID：10.1541/ieejsmas.142.278, ISSN：1341-8939, eISSN：1347-5525
• Light-Addressable Amperometric Sensor with Counter and Working Electrodes of the Same Material　　　　　　　　　　　　　　　
  Keita Kosugi; Yuki Hasegawa; Hidekazu Uchida
  IEEJ Transactions on Electrical and Electronic Engineering, Volume：16, Number：3, First page：478, Last page：485, Mar. 2021, [Reviewed]
  High-throughput screening is important in various fields, and electrochemical approaches are effective because of advantages such as fast response time and electrode array. Hence, we developed a two-dimensional electrochemical array sensor. However, its signal intensities for lower concentrations of the redox pair (100 μM–100 pM [Fe[CN]6]3−/4−) were unstable
  Therefore, in this study, we investigated and demonstrated a method for improving the signal stability at lower concentrations. Two types of counter electrodes were prepared to assess their influence
  the material of the first electrode was the same as that of the working electrode (same material condition), and the other was prepared from a different material (different material condition). First, the differences in the electric potentials between different materials were investigated at lower concentrations. Furthermore, the concentration dependence was investigated using our newly developed light-addressable amperometric sensor for the two conditions. In the different condition, it was observed that differences in the electric potentials between the electrodes at lower concentrations. It was also observed that the signal intensity was more stable for the same material condition than the different material condition. Limit of detection(LOD) for the same material condition was lower than that under the different material condition. The proposed method using the same materials is thus an effective means to measure low concentrations of redox ions and expected to contribute to a fabrication of a smaller and more stable device without reference electrode. © 2021 Institute of Electrical Engineers of Japan. Published by Wiley Periodicals LLC.
  John Wiley and Sons Inc, English, Scientific journal
  DOI：https://doi.org/10.1002/tee.23319
  DOI ID：10.1002/tee.23319, ISSN：1931-4981, SCOPUS ID：85099313763
• Study of detection method for collagenase enzyme reaction using two dimensional electrochemical sensor　　　　　　　　　　　　　　　
  Masato Shichijo; Yuki Hasegawa; Hidekazu Uchida
  Electronics and Communications in Japan, Volume：103, Number：11-12, First page：90, Last page：96, Dec. 2020
  This paper addresses the assay of collagenase activity using Light Addressable Amperometric Sensor (LAAS). The redox current of LAAS was reduced by deposited collagen layers and recovered by collagenase solution. The collagen layers on the LAAS is considered to be broken down by collagenase. We expect an application of LAAS to activity evaluation.
  Wiley-Liss Inc., English, Scientific journal
  DOI：https://doi.org/10.1002/ecj.12270
  DOI ID：10.1002/ecj.12270, ISSN：1942-9541, SCOPUS ID：85089913638
• Study of Hybrid Type Two-dimensional Electrochemical Sensor　　　　　　　　　　　　　　　
  Kazuma Maejima; Yuki Hasegawa; Hidekazu Uchida
  IEEJ Transactions on Sensors and Micromachines, Volume：140, Number：6, First page：144, Last page：149, Jun. 2020, [Reviewed]
  In the field of life science such as drug discovery, technological innovation of molecular evolution is required. We have been studied Light Addressable Amperometric Sensor (LAAS) using organic and inorganic semiconductors as one of new technologies. Hybrid pn junction LAAS devices are fabricated by combining a plurality of organic materials with different Si types. We evaluated the developed devices in terms of concentration dependency and image measurement. As a result, concentration dependency was obtained in the range of 1 mM to 100 nM. Since this device can apply a reverse bias voltage, concentration dependency can be expected even in a further low concentration region.
  The Institute of Electrical Engineers of Japan, Japanese, Scientific journal
  DOI：https://doi.org/10.1541/ieejsmas.140.144
  DOI ID：10.1541/ieejsmas.140.144, ISSN：1347-5525, eISSN：1347-5525, SCOPUS ID：85090070393
• Study of detection method for collagenase enzyme reaction using two dimensional electrochemical sensor　　　　　　　　　　　　　　　
  Masato Shichijo; Yuki Hasegawa; Hidekazu Uchida
  IEEJ Transactions on Sensors and Micromachines, Volume：140, Number：5, First page：98, Last page：102, May 2020, [Reviewed]
  This paper addresses the assay of collagenase activity using Light Addressable Amperometric Sensor (LAAS). The redox current of LAAS was reduced by deposited collagen layers and recovered by collagenase solution. The collagen layers on the LAAS is considered to be broken down by collagenase. We expect an application of LAAS to activity evaluation.
  Institute of Electrical Engineers of Japan, Japanese, Scientific journal
  DOI：https://doi.org/10.1541/ieejsmas.140.98
  DOI ID：10.1541/ieejsmas.140.98, ISSN：1347-5525, SCOPUS ID：85087685866
• Study on Measurement of Reduction Current of Oxidant Mediator by Electrochemical Array Sensor Using Internal Photoelectric Effect　　　　　　　　　　　　　　　
  Keita Kosugi; Hidekazu Uchida
  IEEJ Transactions on Sensors and Micromachines, Volume：139, Number：12, First page：400, Last page：405, Dec. 2019, [Reviewed]
  The Institute of Electrical Engineers of Japan, Japanese, Scientific journal
  DOI：https://doi.org/10.1541/icejsmas.139.400
  DOI ID：10.1541/icejsmas.139.400, ISSN：1341-8939, eISSN：1347-5525
• Development of LB film taste sensor for beer degradation evaluation and its physical properties　　　　　　　　　　　　　　　
  Masayoshi Yazawa; Kazunari Takahashi; Hidekazu Uchida; Yuki Hasegawa
  Electronics and Communications in Japan, Volume：102, Number：11, First page：47, Last page：54, Nov. 2019
  In general, beer degradation is evaluated by sensory test
  however, it depends on the subjectivity of an inspector. Therefore, it is highly required that an objective evaluation method is developed. It has been clarified that the degradation degree of beer proceeds mainly by oxidation of components derived from malt and formation of nonelectrolyte trans-2-nonenal. In this study, we developed LB film taste sensor using metal complex for evaluating the degradation degree of beer with trans-2-nonenal concentrations. In addition, the physical properties of three metal electrodes and sensing film surface were evaluated with AFM and FT-IR, and these results and the sensor response characteristics were compared and discussed for improving the sensitivity as a sensor for beer degradation evaluation.
  Wiley-Liss Inc., English, Scientific journal
  DOI：https://doi.org/10.1002/ecj.12219
  DOI ID：10.1002/ecj.12219, ISSN：1942-9541, SCOPUS ID：85074642256
• Development of LB Film Taste Sensor for Beer Degradation Evaluation and its Physical Properties　　　　　　　　　　　　　　　
  Masayoshi Yazawa; Kazunari Takahashi; Hidekazu Uchida; Yuki Hasegawa
  IEEJ Transactions on Sensors and Micromachines, Volume：139, Number：9, First page：289, Last page：295, Sep. 2019, [Reviewed]
  In general, beer degradation is evaluated by sensory test, however it depends on the subjectivity of an inspector. Therefore, it is highly required that an objective evaluation method is developed. It has been clarified that the degradation degree of beer proceeds mainly by oxidation of components derived from malt and formation of non-electrolyte trans-2-nonenal. In this study, we developed LB film taste sensor using metal complex for evaluating the degradation degree of beer with trans-2-nonenal concentrations. In addition, the physical properties of three metal electrodes and sensing film surface were evaluated with AFM and FT-IR, and these results and the sensor response characteristics were compared and discussed for improving the sensitivity as a sensor for beer degradation evaluation.
  The Institute of Electrical Engineers of Japan, Japanese, Scientific journal
  DOI：https://doi.org/10.1541/ieejsmas.139.289
  DOI ID：10.1541/ieejsmas.139.289, ISSN：1347-5525, eISSN：1347-5525, SCOPUS ID：85071953955
• Ripeness Evaluation of Post Harvest Fruits using Plant Bioelectric Potential　　　　　　　　　　　　　　　
  Ryota ISHIDA; Hidekazu UCHIDA; Yuki HASEGAWA; Keishi IOHARA; Daisuke KOIZUMI
  IEEJ Transactions on Sensors and Micromachines, Volume：138, Number：9, First page：423, Last page：429, Sep. 2018, [Reviewed]
  We proposed a novel technique for ripeness evaluation of post harvest fruits using plant bioelectric potential response which has been reported about a relationship with ambient environment conditions and physiological activities of plant. It is widely known that the ripeness of climacteric fruits improves after harvest. In this paper, we measured the bioelectric potential of climacteric fruits (pumpkins and apples) with the elapse of the days for evaluating the ripening stage of fruits. The results indicated that the bioelectric potential measurement has a possibility to evaluate the fruit ripeness.
  The Institute of Electrical Engineers of Japan, Japanese, Scientific journal
  DOI：https://doi.org/10.1541/ieejsmas.138.423
  DOI ID：10.1541/ieejsmas.138.423, ISSN：1347-5525, eISSN：1347-5525, SCOPUS ID：85052626994
• Study on the Electrochemical Array Sensor using pn Junctions of the Inorganic Semiconductor　　　　　　　　　　　　　　　
  Keita KOSUGI; Yuki HASEGAWA; Hidekazu UCHIDA
  IEEJ Transactions on Sensors and Micromachines, Volume：138, Number：5, First page：204, Last page：207, May 2018, [Reviewed]
  Recently, a more efficient method of drag screening is expected because a demand of medicines grows rapidly. In this study, we use Light Addressable Amperometric Sensor (LAAS) with inorganic pn junction to measure redox currents of individual 1 μL samples. We will show the results of redox pair concentration dependence of LAAS signal using LAAS with well-array plate. The obtained results indicated that monotonically decreasing between concentration and redox current over range 10 mM-0.01 μM. The limit of detection is 1 μM.
  The Institute of Electrical Engineers of Japan, Japanese, Scientific journal
  DOI：https://doi.org/10.1541/ieejsmas.138.204
  DOI ID：10.1541/ieejsmas.138.204, ISSN：1347-5525, eISSN：1347-5525, SCOPUS ID：85046339005
• LB Film Taste Sensor Using Metal Complex for Evaluating Degradation Degree of Beer.　　　　　　　　　　　　　　　
  Yuki Hasegawa; Masayoshi Yazawa; Hidekazu Uchida
  IEEE 7th Global Conference on Consumer Electronics(GCCE), First page：829, Last page：830, 2018
  IEEE, International conference proceedings
  DOI：https://doi.org/10.1109/GCCE.2018.8574823
  DOI ID：10.1109/GCCE.2018.8574823, DBLP ID：conf/gcce/HasegawaYU18
• Study of Screening Technique using a LAAS Microarray　　　　　　　　　　　　　　　
  Takahito Tsukada; Yuki Hasegawa; Hidekazu Uchida
  IEEJ Transactions on Sensors and Micromachines, Volume：137, Number：9, First page：272, Last page：277, Sep. 2017, [Reviewed]
  We have been studied the light addressable amperometric sensor (LAAS) that enables two dimensional chemical imaging. In this study we report a prototype of the LAAS microarray by attaching a well plate on the LAAS device. The LAAS microarray performs individual measurements by selecting each well using addressing light without discrete wirings.
  The Institute of Electrical Engineers of Japan, Japanese, Scientific journal
  DOI：https://doi.org/10.1541/ieejsmas.137.272
  DOI ID：10.1541/ieejsmas.137.272, ISSN：1347-5525, eISSN：1347-5525, SCOPUS ID：85028916277
• Study of Two-dimensional Electrochemical Sensor using an Inorganic Semiconductor　　　　　　　　　　　　　　　
  Sekido Hidetaka; Hasegawa Yuki; Uchida Hidekazu
  IEEJ Transactions on Sensors and Micromachines, Volume：136, Number：5, First page：203, Last page：207, May 2016, [Reviewed]
  We have been studied the light addressable amperometric sensor (LAAS) using an organic device since it has advantages in cost, flexibility, and large sensing area. However, it can be expected that the LAAS device using an inorganic semiconductor has high-durability even under severe conditions. We will demonstrate the array of amperometric sensors with discrete electrodes on Schottky junctions or pn junctions of Si wafer.
  The Institute of Electrical Engineers of Japan, Japanese, Scientific journal
  DOI：https://doi.org/10.1541/ieejsmas.136.203
  DOI ID：10.1541/ieejsmas.136.203, ISSN：1347-5525, eISSN：1347-5525, CiNii Articles ID：130005149061, CiNii Books ID：AN1052634X
• Quality Evaluation for Japanese Sake Using Taste Sensor with LB Films　　　　　　　　　　　　　　　
  Mamoru Hiroki; Hidekazu Uchida; Yuki Hasegawa; Miki Hasegawa
  IEEJ Transactions on Sensors and Micromachines, Volume：136, Number：5, First page：198, Last page：202, May 2016, [Reviewed]
  In this study, we developed a novel taste sensor with Langmuir Blodgett (LB) films for evaluating the quality of Japanese sake. The sensing films were made of stearic acid (SA), DODABr and lanthanides coordinating with SA (Ln-SA), specifically, Tb-SA and Eu-SA. We measured electrical potentials of three different kinds of Japanese sake by the developed sensors. As a result, we obtained the different responses from each sensor. In addition, these results showed that the Ln-SA films enhanced the sensitivity of taste sensors with LB films to Japanese sake. This study indicates that Japanese sake of different manufacturing processes are discriminated by principal component analyses for developed sensor responses, and the modification of LB film materials makes it possible to develop high sensitivity taste sensor systems for evaluating the quality of Japanese sake.
  The Institute of Electrical Engineers of Japan, Japanese, Scientific journal
  DOI：https://doi.org/10.1541/ieejsmas.136.198
  DOI ID：10.1541/ieejsmas.136.198, ISSN：1347-5525, eISSN：1347-5525, SCOPUS ID：84969145330
• Study on inorganic film taste sensor for hot drink evaluation　　　　　　　　　　　　　　　
  Yosuke Tamura; Hidekazu Uchida; Yuki Hasegawa
  IEEJ Transactions on Sensors and Micromachines, Volume：136, Number：5, First page：180, Last page：185, 2016, [Reviewed]
  We aimed to develop taste sensor for evaluating hot drinks using several metal oxide films (ZnO, SnO2, WO3 and In2O3) as a sensing film. The films were formed using Pulse Laser Deposition method on Pt/Ag electrode. We measured the sensor responses for saltiness (NaCl), sweetness (Glucose), and mixed solution of saltiness and sweetness at 60 degrees. We observed the different responses from each sensing film. In these results, all developed sensors responded depending on saltiness concentration and the response value differed by kind of sensing films. On the other hand, it was shown that sensors can detect high concentration sweetness. These results suggest that our developed sensor have a capability to detect taste components and taste interaction in hot drinks.
  Institute of Electrical Engineers of Japan, Japanese, International conference proceedings
  DOI：https://doi.org/10.1541/ieejsmas.136.180
  DOI ID：10.1541/ieejsmas.136.180, ISSN：1347-5525, SCOPUS ID：84969246746
• Plant physiological activity sensing by bioelectric potential measurement　　　　　　　　　　　　　　　
  Yuki Hasegawa; Fumiya Murohashi; Hidekazu Uchida
  PROCEEDINGS OF THE 30TH ANNIVERSARY EUROSENSORS CONFERENCE - EUROSENSORS 2016, Volume：168, First page：630, Last page：633, 2016, [Reviewed]
  Plant bioelectric potential response changes corresponding to the plant physiological activities. The activities and the growth of plant are influenced by the light irradiation conditions. In this study, we aim to obtain the relationship between the light irradiation conditions and the plant activity using plant bioelectric potential. We compared the characteristics of the bioelectric potential response and CO2 consumption rates at various light intensity rate of blue (470 nm), green (525 nm) and red lights (660 nm). These results showed that the difference in potential response has a similar trend with the change of CO2 consumption rate, and the trend depended on the light intensity rate of plural wavelengths. Strawberry is adopted as the sample plant. (C) 2016 The Authors. Published by Elsevier Ltd.
  ELSEVIER SCIENCE BV, English, International conference proceedings
  DOI：https://doi.org/10.1016/j.proeng.2016.11.231
  DOI ID：10.1016/j.proeng.2016.11.231, ISSN：1877-7058, Web of Science ID：WOS:000391641300151
• Analysis of plant bioelectric potential response to illumination by curve fitting　　　　　　　　　　　　　　　
  Ki Ando; Yuki Hasegawa; Hidekazu Uchida; Akinori Kanasugi
  Sensors and Materials, Volume：26, Number：7, First page：471, Last page：482, 2014, [Reviewed]
  Measurement of plant bioelectric potential is one of the promising methods for evaluating plant activities. For example, the photosynthetic rate can be evaluated using the amplitude of the potential response to illumination. In our previous work, we found that this potential response consisted of two potential variations due to photochemical and carbon-fixation reactions. These reactions are important parts of the photosynthetic reaction. However, these potential variations may overlap each other. In this case, a waveform of the potential response differed variously, and it was difficult to evaluate the photosynthetic rate using its amplitude. Therefore, we performed curve fitting for estimating and separating these overlapped potential variations. First, we defined f1 and f2 as functions to represent the potential variations due to the photochemical and carbonfixation reactions, respectively. Additionally, we modelled the potential response to illumination as F =f1 +f2 and we fit F to the original data of the potential response. As a result of curve fitting, F fit to the original data of the potential response very well. The amplitude of f2 strongly correlated with the photosynthetic rate. This result suggested that information on the photosynthetic rate was recovered by curve fitting. We consider that this method can be applied to a more accurate evaluation of the photosynthetic activity using the bioelectric potential of the plant.
  M Y U Scientific Publishing Division, English, Scientific journal
  ISSN：0914-4935, SCOPUS ID：84908203974
• Ambient Temperature Effects on Evaluation of Plant Physiological Activity Using Plant Bioelectric Potential　　　　　　　　　　　　　　　
  Yuki Hasegawa; Genta Yamanaka; Ki Andol; Hidekazu Uchida
  SENSORS AND MATERIALS, Volume：26, Number：7, First page：461, Last page：470, 2014, [Reviewed]
  The plant factory has been in practical use for ensuring a stable food supply and cultivating high-quality food. However, it has problems with capital and operating expenditures, because it is necessary to prepare a big room of the same level of cleanliness as that of a semiconductor factory and to use a full environment control system that includes an air conditioner, a feed nutrient solution line, and sensing devices in continuous operation. Therefore, we focused on the bioelectric potential response as a promising and low-cost approach of evaluating plant physiological activities. Bioelectric potential is generated by ions in a plant cell and the potential is related to plant physiological activities. Although we already reported that the potential response differs depending on the on-off cycle of illumination and is related to photosynthetic activity, there is no report on the effects of ambient temperature and light interruption time on the measurement of bioelectric potential. In this study, we investigated the effects of ambient temperature and light interruption time on the evaluation of plant physiological activities. In the experiments, we measured bioelectric potential responses and CO, concentration when light irradiation was started or stopped at several temperatures. In addition, we investigated the effect of the light interruption time on the evaluation of plant physiological activities using plant bioelectric potential. These results contribute to the improvement of the precision of the evaluation system for plant physiological activities using bioelectric potential responses.
  MYU, SCIENTIFIC PUBLISHING DIVISION, English, Scientific journal
  ISSN：0914-4935, Web of Science ID：WOS:000342274800002
• Study of Plant Bioelectric Potential Response Due to Photochemical Reaction and Carbon-Fixation Reaction in Photosynthetic Process　　　　　　　　　　　　　　　
  Ki Ando; Yuki Hasegawa; Tamaki Yaji; Hidekazu Uchida
  ELECTRONICS AND COMMUNICATIONS IN JAPAN, Volume：96, Number：12, First page：85, Last page：92, Dec. 2013, [Reviewed]
  We focused on measurement of the bioelectric potential as a method of evaluating plant activities and supporting effective cultivation. In this study, we investigated the bioelectric potential response due to photochemical reactions and carbon-fixation reactions in the process of photosynthesis. First, we measured the bioelectric potential when illumination was started and stopped, under N-2 gas conditions in order to suppress the carbon-fixation reaction and respiration. It was found that the amplitude of the potential response was related to the illumination intensity and the wavelength. We considered that the amplitude of the potential response under N-2 conditions indicated the activity of the photochemical reaction. Based on this result, we investigated the potential response under room air conditions. If the carbon-fixation reaction was deactivated by a long dark period, a significant potential decrease was observed when illumination started. In contrast, if the carbon-fixation reaction remained active during a short dark period, the potential decrease was slight or none regardless of the photosynthetic rate. Therefore, we considered that this potential decrease is related to the activation of the carbon-fixation reaction. Next, we investigated the relationship between plant activity and the potential response when illumination stopped. The results showed that the amplitude of the response is related to the illumination intensity and the respiration rate. We conclude that plant activities such as photosynthesis can be evaluated in more detail by measurement of the bioelectric potential, as an application of this study. (c) 2013 Wiley Periodicals, Inc. Electron Comm Jpn, 96(12): 85-92, 2013; Published online in Wiley Online Library (wileyonlinelibrary.com). DOI 10.1002/ecj.11518
  WILEY-BLACKWELL, English, Scientific journal
  DOI：https://doi.org/10.1002/ecj.11518
  DOI ID：10.1002/ecj.11518, ISSN：1942-9533, eISSN：1942-9541, Web of Science ID：WOS:000326711900011
• Study on the two-dimensional chemical sensor using a photoconductive polymer film　　　　　　　　　　　　　　　
  Hideki Arai; Daisuke Goto; Yuki Hasegawa; Hidekazu Uchida
  IEEJ Transactions on Sensors and Micromachines, Volume：133, Number：7, First page：290, Last page：296, Jul. 2013, [Reviewed]
  We have developed the two-dimensional chemical sensor using a photoconductive polymer film. This paper presents the refined fabrication process and the characteristics of the devices. We investigated poly(N-vinylcarbazole) (PVK) and poly(2-vinylcarbazole) (2-PVK) as the photoconductive materials. Copper(II)2,9,16,23-tetra-tert-butyl-29H,31H- phthalocyanine (Bu-CuPc) was used as dopant for dye sensitization. We fabricated the devices by spin-coat method. From the results of our study, the device fabricated by using 2-PVK with Bu-CuPc showed high photoconductivity, high S/N and concentration dependence. The detection limit of K3Fe(CN) 6/K4Fe(CN)6 was approximately 1nM. Moreover, it was found that the photoconductivity depended on the quantity of dopant and the thickness of the film. It was also found that the S/N depended on the flatness of the film. In future study, we will intend to perform two-dimensional measurement. © 2013 The Institute of Electrical Engineers of Japan.
  English, Scientific journal
  DOI：https://doi.org/10.1541/ieejsmas.133.290
  DOI ID：10.1541/ieejsmas.133.290, ISSN：1341-8939, SCOPUS ID：84880049106
• Study of plant bioelectric potential response due to photosynthesis reaction　　　　　　　　　　　　　　　
  Ki Ando; Yuki Hasegawa; Tamaki Yaji; Hidekazu Uchida
  ELECTRONICS AND COMMUNICATIONS IN JAPAN, Volume：95, Number：8, First page：10, Last page：16, Aug. 2012, [Reviewed]
  Bioelectric potential is generated by ions in a plant cell; the potential changes with physiological activities of the plant. Therefore, measurement of the potential is a promising method for evaluation of plant activities. In this study, we investigated the mechanism of potential response generation due to photosynthetic reactions of plants. For this purpose, we measured the bioelectric potential with air replaced by N2 gas in order to suppress the carbon-fixation reaction. The potential response was found to be different from the ambient gas, and we determined that several behaviors of the potential response were strongly related to the activities of the photochemical reaction and carbon-fixation reaction. We next measured the potential when the illuminating conditions were changed to accelerate or decelerate photosynthesis. The shape of the potential response was found to be related to the increase or decrease of photosynthetic rate and can provide support for effective cultivation. (c) 2012 Wiley Periodicals, Inc. Electron Comm Jpn, 95(8): 1016, 2012; Published online in Wiley Online Library (). DOI 10.1002/ecj.11393
  WILEY-BLACKWELL, English, Scientific journal
  DOI：https://doi.org/10.1002/ecj.11393
  DOI ID：10.1002/ecj.11393, ISSN：1942-9533, Web of Science ID：WOS:000306803700002
• Development of Taste Sensor with LB Films for Measurement of High-intensity Sweetener　　　　　　　　　　　　　　　
  Asami Tetsuya; Hasegawa Yuki; Ando Ki; Uchida Hidekazu; Yaji Tamaki
  IEEJ Transactions on Sensors and Micromachines, Volume：132, Number：6, First page：166, Last page：171, Jun. 2012, [Reviewed]
  Recently, development of taste sensor is furthered for quality control of foods. In this study, we developed taste sensor with stearic acid LB films for measurement of high-intensity sweetener taste. We measured several high-intensity sweeteners with the number of layers of stearic acid LB films as 10 and 20 layers. And we also measured mixed high-intensity sweeteners. The result showed that the stearic acid LB films taste sensor was used to detect glucose and high-intensity sweeteners at a threshold level of taste. Stearic acid LB films sensor detects different response by mixed ratio of high-intensity sweeteners. In addition, we compared difference of sensor responses by three kind of storing conditions (vacuum vessel, KCl solution and the air storing). The result showed that the structure of stearic acid LB films is easily affected by moisture in storage environment. This study indicated that the modification of stearic acid LB film layers and materials makes it possible to develop high sensitivity and selectivity taste sensor for sweeteners.
  The Institute of Electrical Engineers of Japan, Japanese, Scientific journal
  DOI：https://doi.org/10.1541/ieejsmas.132.166
  DOI：https://doi.org/10.1380/vss.64.168_references_DOI_VAiPwGLyIqknQvckcQrPWDF9emB
  DOI ID：10.1541/ieejsmas.132.166, ISSN：1341-8939, eISSN：1347-5525, CiNii Articles ID：10030607233, CiNii Books ID：AN1052634X
• Study of plant bioelectric potential response due to photochemical reaction and carbon-fixation reaction in photosynthetic process　　　　　　　　　　　　　　　
  Ki Ando; Yuki Hasegawa; Tamaki Yaji; Hidekazu Uchida
  IEEJ Transactions on Sensors and Micromachines, Volume：132, Number：6, First page：159, Last page：165, 2012, [Reviewed]
  We focused on measurement of the bioelectric potential as a method of evaluating plant activities and supporting effective cultivation. In this study, we researched on the bioelectric potential response due to photochemical reaction and carbon-fixation reaction in the process of photosynthesis. At first, we measured the bioelectric potential when illumination started and stopped, under N2 gas condition for suppressing carbon-fixation reaction and respiration. In the result, amplitude of the potential response related to illumination intensity and wave length. We considered that the amplitude of potential response in N2 condition indicated activity of photochemical reaction. Based on this result, we investigated the potential response in room air condition. If carbon-fixation reaction was deactivated by long dark period, significant potential decrease was observed when illumination started. In contrast, if carbon-fixation reaction kept active during short dark period, potential decrease was slight or none regardless of photosynthetic rate. Therefore, we considered that this potential decrease related to activation of carbon-fixation reaction. Next, we researched on relationship between plant activities and the potential response when illumination stopped. The result shows that amplitude of the response related to illumination intensity and respiration rate. We conclude that plant activities such as photosynthesis can be evaluated in more detail by measurement of the bioelectric potential with applying this study. © 2012 The Institute of Electrical Engineers of Japan.
  Institute of Electrical Engineers of Japan, English, Scientific journal
  DOI：https://doi.org/10.1541/ieejsmas.132.159
  DOI ID：10.1541/ieejsmas.132.159, ISSN：1347-5525, SCOPUS ID：84866934061
• Study of plant bioelectric potential response due to photosynthesis reaction　　　　　　　　　　　　　　　
  Ki Ando; Yuki Hasegawa; Tamaki Yaji; Hidekazu Uchida
  IEEJ Transactions on Sensors and Micromachines, Volume：131, Number：9, First page：4, Last page：342, 2011, [Reviewed]
  Bioelectric potential is generated by ions in a plant cell and the potential changes with physiological activities of the plant. Therefore, measurement of the potential is a promising method for evaluation of the plant activities. In this study, we investigated mechanism of the potential response generation due to photosynthesis reaction of plant. For this purpose, we measured bioelectric potential with replacing air by N2 gas in order to suppress carbon-fixation reaction. In the result, the potential response was different from ambient gas, and we clarified that several behaviors of the potential response strongly related to activities of photochemical reaction and carbon-fixation reaction. Next, we measured the potential when illuminating condition was changed for accelerating or decelerating photosynthesis. At that time, shape of the potential response correlated with increase or decrease of photosynthetic rate. We considered that the measurement of the bioelectric potential can be applied to evaluation of photosynthetic activity and it can support for effective cultivation. © 2011 The Institute of Electrical Engineers of Japan.
  Japanese, Scientific journal
  DOI：https://doi.org/10.1541/ieejsms.131.337
  DOI ID：10.1541/ieejsms.131.337, ISSN：1341-8939, SCOPUS ID：82255196267
• Novel concept microarray enabling PCR and multistep reactions through pipette-free aperture-to-aperture parallel transfer　　　　　　　　　　　　　　　
  Yasunori Kinoshita; Takahiro Tayama; Koichiro Kitamura; Md Salimullah; Hidekazu Uchida; Miho Suzuki; Yuzuru Husimi; Koichi Nishigaki
  BMC BIOTECHNOLOGY, Volume：10, Oct. 2010, [Reviewed]
  Background: The microarray has contributed to developing the omic analysis. However, as it depends basically on the surface reaction, it is hard to perform bulk reactions and sequential multistep reactions. On the other hand, the popular microplate technology, which has a great merit of being able to perform parallel multistep reactions, has come to its limit in increasing the number of wells (currently, up to 9600) and reducing the volume to deal with due to the difficulty in operations.
  Results: Here, we report a novel microarray technology which enables us to explore advanced applications, termed microarray-with-manageable volumes (MMV). The technical essence is in the pipette-free direct parallel transfer from well to well performed by centrifugation, evading the evaporation and adsorption-losses during handling. By developing the MMV plate, accompanying devices and techniques, generation of multiple conditions (256 kinds) and performance of parallel multistep reactions, including PCR and in vitro translation reactions, have been made possible. These were demonstrated by applying the MMV technology to searching lysozyme-crystallizing conditions and selecting peptides aimed for A beta-binding or cathepsin E-inhibition.
  Conclusions: With the introduction of a novel concept microarray (MMV) technology, parallel and multistep reactions in sub-mu L scale have become possible.
  BIOMED CENTRAL LTD, English, Scientific journal
  DOI：https://doi.org/10.1186/1472-6750-10-71
  DOI ID：10.1186/1472-6750-10-71, ISSN：1472-6750, Web of Science ID：WOS:000283064700001
• Unsupervised scanning light pulse technique for chemical sensing　　　　　　　　　　　　　　　
  H. Uchida; D. Filippini; I. Lundstrom
  Sensors and Actuators B: Chemical, Volume：103, Number：1-2, First page：225, Last page：232, May 2004, [Reviewed]
  A scanning light pulse technique (SLPT) operating in a totally unsupervised way suitable for chemical sensing and the efficient screening of new sensing materials is demonstrated. The procedure automatically determines inflexion points (optimum biasing condition) and photocurrent amplitudes from locally acquired i-V characteristics of metal-insulator-semiconductor structures that enables optimum biased measurements properly re-scaled to avoid spurious amplifying effects.
  Additionally, the procedure allows composing flat-band voltage shift patterns within the same experiment, and avoiding feedback mode measurements. Optimum bias patterns when used to modulate subsequent measurements, allow a fast recording mode. (C) 2004 Elsevier B.V. All rights reserved.
  Elsevier, English, Scientific journal
  DOI：https://doi.org/10.1016/j.snb.2004.04.054
  DOI ID：10.1016/j.snb.2004.04.054, ISSN：0925-4005, Web of Science ID：WOS:000224064100035
• Gas response and modeling of NO-sensitive thin-Pt SiC schottky diodes　　　　　　　　　　　　　　　
  Shabbir A. Khan; Elder A. de Vasconcelos; Hidekazu Uchida; Teruaki Katsube
  Sensors and Actuators B: Chemical, Volume：92, Number：1-2, First page：181, Last page：185, Apr. 2003, [Reviewed]
  Thin-Pt SiC schottky diodes responding to NO gas concentrations from 500 down to 10 ppm at temperatures up to 400 degreesC were fabricated. The response followed a simple Langmuir adsorption model for all concentrations equal or superior to 100 ppm. From a linear correlation of the conductance (G) and current (1) in a G/I x G plot, it was possible to evaluate accurately the series resistance, ideality factor and barrier height changes of the devices due to exposure to NO gas, further confirming the model adopted as well as the quality of the devices. (C) 2003 Elsevier Science B.V. All rights reserved.
  Elsevier, English, Scientific journal
  DOI：https://doi.org/10.1016/S0925-4005(03)00261-2
  DOI ID：10.1016/S0925-4005(03)00261-2, ISSN：0925-4005, Web of Science ID：WOS:000183162200025
• Silicon-carbide Schottky diodes with sputtered and laser-ablated thin-Pt gate as no gas sensors in high temperature　　　　　　　　　　　　　　　
  SA Khan; G Wei; EA de Vasconcelos; H Uchida; T Katsube
  BOSTON TRANSDUCERS'03: DIGEST OF TECHNICAL PAPERS, VOLS 1 AND 2, First page：528, Last page：531, 2003, [Reviewed]
  We fabricated thin catalytic metal gate Schottky diodes prepared with Pt gates deposited by sputter and laser ablation method on SiC substrates responding to NO gas at high temperature. Schottky barrier height, ideality factor and series resistance were evaluated from linear G/I x G plots. Upon exposure to NO gas, the barrier height decreased, ideality factor increased and series resistance decreased and as a whole effect, forward current of the devices was increased. Change of barrier height was larger for 4H-SiC Schottky diodes than 6H-SiC Schottky diodes. The devices were tested for NO gas concentrations from 5 ppm to 50 ppm and showed reversible and stable response at temperatures up to 450degreesC.
  IEEE, English, International conference proceedings
  Web of Science ID：WOS:000184567300133
• Integration of bienzymatic disaccharide sensors for simultaneous determination of disaccharides by means of light addressable potentiometric sensor　　　　　　　　　　　　　　　
  K Aoki; H Uchida; T Katsube; Y Ishimaru; T Iida
  ANALYTICA CHIMICA ACTA, Volume：471, Number：1, First page：3, Last page：12, Oct. 2002, [Reviewed]
  Three saccharides such as sucrose, maltose and glucose were simultaneously determined by the use of the light addressable potentiometric sensor (LAPS). One-chip integration of three saccharide sensors was performed by means of a glucose sensor using glucokinase, By the addition of oligosaccharide hydrolases such as invertase and (alpha-D-glucosidase to the glucose sensors, the disaccharide concentrations were determined by variation of glucose concentrations. All the enzymes employed were thermostable enzymes because of their durability for repeated measurements. Clear distinctions of the response patterns were obtained-among the three saccharide samples. Since the simplified LAPS system was limited in number of sensing spots, the complicated chemometrics such as partial least squares (PLS) was not always indispensable. Therefore, a simpler method such as multiple linear regression (MLR) was able to be applied to the mixture analysis under a low-concentrated sample in order to simplify the analysis. Thus, we treated the glucose as a key product in the regression equation optimized for the bienzymatic biosensensing process. The multivariate calibrations of the samples were simultaneously illustrated by using the estimated local glucose concentration. Finally, more than 0.7 of correlation coefficients were obtained between the true and the predicted sample concentrations although the linear approximation was not able to correct a few kinds of inhibition. (C) 2002 Elsevier Science B.V. All rights reserved.
  ELSEVIER SCIENCE BV, English, Scientific journal
  ISSN：0003-2670, Web of Science ID：WOS:000178565700001
• Surface photovoltage NO gas sensor with properties dependent on the structure of the self-ordered mesoporous silicate film　　　　　　　　　　　　　　　
  T Yamada; HS Zhou; H Uchida; M Tomita; Y Ueno; T Ichino; Honma, I; K Asai; T Katsube
  ADVANCED MATERIALS, Volume：14, Number：11, First page：812, Last page：815, Jun. 2002, [Reviewed]
  WILEY-V C H VERLAG GMBH, English, Scientific journal
  DOI：https://doi.org/10.1002/1521-4095(20020605)14:11<812::AID-ADMA812>3.0.CO;2-W
  DOI ID：10.1002/1521-4095(20020605)14:11<812::AID-ADMA812>3.0.CO;2-W, ISSN：0935-9648, eISSN：1521-4095, Web of Science ID：WOS:000176252600008
• Ordered mesoporous silicate materials from a template of triblock copolymer (II): Synthesis of film and application for gas sensor　　　　　　　　　　　　　　　
  HS Zhou; T Yamada; K Asai; Hodma, I; H Uchida; T Katsube
  EURO CERAMICS VII, PT 1-3, Volume：206-2, First page：1985, Last page：1988, 2002
  Size controlled silicate mesoporous film was successfully synthesized using poly (ethylene oxide)-poly (propylene oxide)-poly (ethylene oxide) (EOlPOmEOn) triblock copolymers as a template. The mesostructure and d spacing of the mesoporous film can be controlled by the syntesis conditions. The hexagonal mesoporous film can be obtained using Pluronic P123 (EO20PO70EO20) triblock copolymer as a template, The characteristics of mesoporous films were investigated in XRD. A surface photo voltage (SPV) system has been applied to the Metal-SiO2 mesoporous-Si device structure (MIS) to investigated the characteristics as a NO gas sensor.
  TRANS TECH PUBLICATIONS LTD, English, Scientific journal
  ISSN：1013-9826, Web of Science ID：WOS:000172651400481
• NO gas detection at high temperature using thin-Pt 4H-SiC and 6H-SiC schottky diodes　　　　　　　　　　　　　　　
  SA Khan; EA de Vasconcelos; H Uchida; T Katsube
  SILICON CARBIDE AND RELATED MATERIALS - 2002, Volume：433-4, First page：961, Last page：964, 2002, [Reviewed]
  Thin-Pt SiC Schottky diodes on 4H- and 6H-SiC substrates responding to NO gas at high temperature were fabricated. Schottky barrier height, ideality factor and series resistance were evaluated from linear G/I x G plots. Upon exposure to NO gas, the forward current of the devices increases due to a reduction of the Schottky barrier height. This reduction is slightly larger for 6H-SiC Schottky diodes. The devices were tested for NO gas concentrations from 5 ppm to 50 ppm and showed reversible and stable response at temperatures up to 450 degreesC.
  TRANS TECH PUBLICATIONS LTD, English, Scientific journal
  ISSN：0255-5476, Web of Science ID：WOS:000185077700230
• Synthesis and application of self-ordered mesoporous silicate film from a template of tri-block copolymer　　　　　　　　　　　　　　　
  HS Zhou; T Yamada; K Asai; Honma, I; H Uchida; T Katsube
  PRICM 4: FORTH PACIFIC RIM INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS AND PROCESSING, VOLS I AND II, First page：1919, Last page：1921, 2001, [Reviewed]
  Size controlled silicate mesoporous film was successfully synthesized using poly (ethylene oxide)-poly (propylene oxide)-poly (ethylene oxide) (EOlPOmEOn) triblock copolymers as a template. The mesostructure and d spacing of the mesoporous film can be controlled by the syntesis conditions. The hexagonal mesoporous film can be obtained using Pluronic P123 (EO20PO70EO20) triblock copolymer as a template. The characteristics of mesoporous films were investigated in XRD. A surface photo voltage (SPV) system has been applied to the Metal-SiO2 mesoporous-Si device structure (MIS) to investigated the characteristics as a NO gas sensor.
  JAPAN INST METALS, English, International conference proceedings
  Web of Science ID：WOS:000178391600485
• Novel type cholinesterase sensor based on SPV measurement technique　　　　　　　　　　　　　　　
  O. V. Fedosseeva; H. Uchida; T. Katsube; Y. Ishimaru and T. Iida
  Sensors and Actuators B: Chemical, Volume：65, Number：1-3, First page：55, Last page：57, Jun. 2000, [Reviewed]
  The surface photovoltage (SPV) technique was applied to the fabrication of a novel type biosensor based on immobilized cholinesterase. Two types of cholinesterase were utilized, acetylcholinesterase and butyrylcholinesterase, depending on the types of substrates. On the surface of the silicon wafer the cholinesterase layers were immobilized by using 3-aminopropyltriethoxysilane and glutaraldehyde. Characteristics of the sensor were studied in phosphate-buffered saline containing 15 mM NaCl and 1 mM phosphate buffer, pH 7.0. The detection limits of the substrates were 9.0 x 10(-7) M, 2.7 x 10(-6) M, and 4.1 x 10(-6) M for butyrylthiocholine iodide, acetylcholine iodide, and acetylcholine chloride, respectively. The activity of the cholinesterase was inhibited by the presence of alkaloids such as physostigmine and neostigmine. (C) 2000 Elsevier Science S.A. All rights reserved.
  Elsevier, English, Scientific journal
  DOI：https://doi.org/10.1016/S0925-4005(99)00437-2
  DOI ID：10.1016/S0925-4005(99)00437-2, ISSN：0925-4005, Web of Science ID：WOS:000088185800016
• A study of silicon Schottky diode structures for NOx gas detection　　　　　　　　　　　　　　　
  Wenyi Zhang; Elder A. de Vasconcelos; H. Uchida; T. Katsube; T. Nakatsubo; Y. Nishioka
  Sensors and Actuators B: Chemical, Volume：65, Number：1-3, First page：154, Last page：156, Jun. 2000, [Reviewed]
  A silicon Schottky diode structure was applied for detecting nitride oxide gases at room temperature. The Pt-Pd/Si/Al structure was employed successfully to detect NO2 gas concentration for as low as 6 ppm at room temperature. This sensor also showed useful response to NO gas, but the sensitivity was lower than its sensitivity to NO2 gas. Fabrication of the diode on a porous silicon surface enhances NO2 gas sensitivity, but the response time becomes longer. This structure provides a convenient technique to manufacture miniaturized and integrated sensors. (C) 2000 Elsevier Science S.A. All rights reserved.
  Elsevier, English, Scientific journal
  DOI：https://doi.org/10.1016/S0925-4005(99)00466-9
  DOI ID：10.1016/S0925-4005(99)00466-9, ISSN：0925-4005, Web of Science ID：WOS:000088185800045
• Highly sensitive semiconductor NOx gas sensor operating at room temperature　　　　　　　　　　　　　　　
  A. Kunimoto; N. Abe; H. Uchida and T. Katsube
  Sensors and Actuators B: Chemical, Volume：65, Number：1-3, First page：112, Last page：124, Jun. 2000, [Reviewed]
  The novel semiconductor NOx gas sensor based on a heterojunction structure workable at room temperature has been investigated. The sensor consists of Pt/Tin-dioxide(SnO2)/n-Si/p(+)-Si/Al in which vertical direction current between Pt and Al electrode was measured with applying reverse direction bias voltage on Pt electrode. All the films including SnO2 with the thickness of 50-200 nm were deposited on an epitaxial layer of n-Si over p(+)-Si substrate by RF sputtering method. As a result, the current in the sensor decreased when the gas flow was switched from dry air to mixed gas of air and NOx. Clear response was obtained at the NOx gas concentration as low as 1 ppm at room temperature, while the almost no response was observed for the n-Si, p-Si, and p-Si/n(+)-Si substrate. The generation of large change in current for the sensor was considered that the barrier height change or conductivity change of SnO2 gas sensitive layer may cause the modulation of the depletion layer at the n/p(+)-junction of Si substrate. (C) 2000 Elsevier Science S.A. All rights reserved.
  Elsevier, English, Scientific journal
  DOI：https://doi.org/10.1016/S0925-4005(99)00440-2
  DOI ID：10.1016/S0925-4005(99)00440-2, ISSN：0925-4005, Web of Science ID：WOS:000088185800036
• Highly sensitive thermistors based on high-purity polycrystalline cubic silicon carbide　　　　　　　　　　　　　　　
  E. A. Vasconcelos; S. A. Khan; W.Y. Zhang; H. Uchida; T. Katsube
  Sensors and Actuators A: Physical, Volume：83, Number：1-3, First page：167, Last page：171, May 2000, [Reviewed]
  It is possible to fabricate highly sensitive thermistors using polycrystalline, intentionally undoped, chemical vapor deposition cubic SiC wafers. Resistance-temperature characteristics described by thermistor equations with thermistor constants around 7000 K from 25 degrees C to 200 degrees C and around 5000 K from 200 degrees C to 400 degrees C are presented (temperature coefficient of resistance at 25 degrees C = -7.9%/K). The influence of the fabrication process on thermistor characteristics as well as conduction mechanisms are discussed. (C) 2000 Elsevier Science S.A. All rights reserved.
  Elsevier, English, Scientific journal
  DOI：https://doi.org/10.1016/S0924-4247(00)00351-4
  DOI ID：10.1016/S0924-4247(00)00351-4, ISSN：0924-4247, Web of Science ID：WOS:000087144800027
• Potential of high-purity polycrystalline silicon carbide for thermistor applications　　　　　　　　　　　　　　　
  EA De Vasconcelos; WY Zhang; H Uchida; T Katsube
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Volume：37, Number：9A, First page：5078, Last page：5079, Sep. 1998, [Reviewed]
  This report concerns with a new material for thermistors, which consists of an undoped, polycrystalline, ultrahigh-purity chemical vapor deposition silicon carbide wafer. The resistance-temperature characteristic was measured from 25 degrees C to 365 degrees C. A good fit to the thermistor equation was observed and the thermistor B constant was 4845 K. These wafers are thermally and chemically stable, homogeneous and pure. They might be useful for fabrication of sensitive thermistors with stability and reproducibility of characteristics.
  JAPAN J APPLIED PHYSICS, English, Scientific journal
  ISSN：0021-4922, Web of Science ID：WOS:000076313200082
• A novel semiconductor NO gas sensor operating at room temperature　　　　　　　　　　　　　　　
  Wenyi Zhang; H. Uchida; T. Katsube; T. Nakatsubo; Y Nishioka
  Sensors and Actuators B: Chemical, Volume：49, Number：1-2, First page：58, Last page：62, Jun. 1998, [Reviewed]
  A novel NO gas sensor workable at room temperature was proposed and discussed the response mechanism. It is based on a Si diode structure consisting of Pd-Pt/WO3/p-Si/Al. WO3 film was deposited by reactive sputtering and crystallized by thermal annealing. The gas detection was carried out by measuring vertical direction current between Pt-Pd electrode and Al ohmic contact. The sensor showed sensitivity to NO gas at the concentration lower than 50 ppm at room temperature. The 90% response time was less than 3 min and good reversibility was observed without the shift of the base level current. This sensor may lead to the development of integrated sensors on a single Si chip. (C) 1998 Elsevier Science S.A. All rights reserved.
  Elsevier, English, Scientific journal
  DOI：https://doi.org/10.1016/S0925-4005(98)00129-4
  DOI ID：10.1016/S0925-4005(98)00129-4, ISSN：0925-4005, Web of Science ID：WOS:000075652400010
• Highly sensitive semiconductor NOx gas sensor operating at room temperature　　　　　　　　　　　　　　　
  A Kunimoto; N Abe; H Uchida; T Katsube
  TECHNICAL DIGEST OF THE SEVENTH INTERNATIONAL MEETING ON CHEMICAL SENSORS, First page：479, Last page：481, 1998, [Reviewed]
  The novel semiconductor NOx gas sensor based on a MIS(Metal Insulator Semiconductor)diode structure workable at room temperature has been investigated. The sensor consists of Pt/Tindioxide(SnO2)/n-Si/p+Si/Al in which vertical direction current between Pt and Al electrode was measured with applying reverse direction bias voltage on Pt electrode. All the films including SnO2 with the thickness of 50 similar to 200nm were deposited on an epitaxial layer of n-Si over p-Si substrate by RF sputtering method. As a result, the current in the sensor decreased when the gas now was switched from dry air to mixed gas of air and NOx. Clear response was obtained at the NOx gas concentration as low as less than 1 ppm at room temperature, while the almost no response was observed for the n-Si p-Si, and pSi/n-Si substrate.The generation of large change in current for the novel semiconductor was considered to be a effect of barrier formation at the interface between n-Si and p-Si with NOx adsorption on SnO2 film.
  WORLD PUBLISHING CORPORATION, English, International conference proceedings
  Web of Science ID：WOS:000077459200163
• A study of MIS Schottky and blocked structure NOx gas sensor　　　　　　　　　　　　　　　
  W Zhang; EA de Vasconcelos; H Uchida; T Katsube; T Nakatsubo; Y Nishioka
  TECHNICAL DIGEST OF THE SEVENTH INTERNATIONAL MEETING ON CHEMICAL SENSORS, First page：831, Last page：833, 1998, [Reviewed]
  Semiconductor junction type structure consisting of both Schottky junction and semiconductor heterojunction with a silicon substrate was applied for detecting nitride oxide gases. It was first shown that Pr-Pd/Si/Al Schottky junction is sensitive to NO2 gas at room temperature at the concentration less than 6ppm with good response reversibility, whereas much less sensitivity to NO gas. Porous silicon surface enhanced the sensitivity of NO2 gas although the recovery time became a little slower compared to the polished silicon surface. It was next shown that a heterojunction structure consisting of Pt-Pd/WO3/Si/Al shows high sensitivity to NO gas as well as NO2 gas. Catalytic effect of WO3 may be considered to enhance the NO sensitivity.
  WORLD PUBLISHING CORPORATION, English, International conference proceedings
  Web of Science ID：WOS:000077459200278
• Novel type biosensor based on immobilized cholinesterase using SPV measurement technique　　　　　　　　　　　　　　　
  OV Fedosseeva; H Uchida; T Katsube; Y Ishimaru; T Iida
  TECHNICAL DIGEST OF THE SEVENTH INTERNATIONAL MEETING ON CHEMICAL SENSORS, First page：317, Last page：319, 1998, [Reviewed]
  The new measurement methods of Surface PhotoVoltage(SPV) technique - phase shift method and single SPV were applied to the fabrication of a novel type biosensor based on immobilized cholinesterase.
  The two types of cholinesterase were utilized, acetylcholinesterase and butyrylcholinesterase, depending on the type of substrate. On the surface of the silicon wafer the 3-aminopropyltriethoxysilane, glutaraldehyde and cholinesterase layer were deposited. Characteristics of the sensor were studied in phosphate-buffered saline consisting of 15mM NaCl and 1 mM phosphate buffer pH 7.0. The determination limits of substrates were 9.0x10(-7)M, 2.7x10(-6)M and 4.1x10(-6)M for butyrylthiocholine iodide, acetylcholine iodide and acetylcholine chloride, respectively. The activity of cholinesterase was inhibited in the presence of alkaloids such as physostigmine and neostigmine.
  WORLD PUBLISHING CORPORATION, English, International conference proceedings
  Web of Science ID：WOS:000077459200106
• High resolution chemical image sensor using a high-speed digital SPV measurement system　　　　　　　　　　　　　　　
  Hidekazu Uchida; Wenyi Zhang; Hitoshi Maekawa; Teruaki Katsube
  SENSORS AND MATERIALS, Volume：9, Number：5, First page：267, Last page：278, 1997, [Reviewed]
  A high resolution and high-speed two-dimensional surface photovoltage (SPV) sensing system which is based on digital data processing was developed and applied to the in-situ monitoring of chemical images. The SPV signal generated by a scanning light beam was directly stored in a computer and signal integration of all measurement points was carried out simultaneously in allocated memories :by numerical calculation, which made it possible, in principle, to reduce the measurement time to equal the scanning time of the light beam. The light beam was modulated by a haversine (interleaved versed sine) wave in order to separate each measurement point signal and obtain a high resolution image. To form images of 16,384 data points, the proposed system requires about 4.5 min, which is at least two orders of magnitude faster than a conventional analog SPV system.
  MYU, SCIENTIFIC PUBLISHING DIVISION, English, Scientific journal
  ISSN：0914-4935, Web of Science ID：WOS:A1997XY82200001
• A novel semiconductor NO gas sensor operating at room temperature　　　　　　　　　　　　　　　
  WY Zhang; H Uchida; T Katsube; T Nakatsubo; Y Nishioka
  TRANSDUCERS 97 - 1997 INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS AND ACTUATORS, DIGEST OF TECHNICAL PAPERS, VOLS 1 AND 2, First page：569, Last page：572, 1997, [Reviewed]
  A novel NO gas sensor workable at room temperature was proposed and discussed the response mechanism. It is based on a Si diode structure consisting of Pd-Pt/WO3/p-Si/Al. WO3 film was deposited by reactive sputtering and crystallized by thermal annealing. The sensor showed sensitivity to NO gas of the concentration less than 50 ppm at room temperature. The response time was less than 1 min and good reversibility was observed without the shift of the base level current. The sensor may lead to the possibility of integration of NO gas sensor on a Si LSI chip.
  I E E E, English, International conference proceedings
  Web of Science ID：WOS:A1997BJ35B00144
• Gas sensing characteristics of zinc-tin complex oxide thin films with spinel-type structure　　　　　　　　　　　　　　　
  Nobuyuki HIRATSUKA; Hiroshi KOBAYASHI; Hidekazu UCHIDA; Teruaki KATSUBE
  JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, Volume：104, Number：11, First page：1048, Last page：1051, Nov. 1996, [Reviewed]
  Zn-Sn metallic films were deposited on alumina substrates by an evaporation method, and then complex oxide films were fabricated by annealing in air. The relation between the formation of spinel-type Zn2SnO4 and their sensing characteristics to i-C4H10 gas was studied. Both ZnO and SnO2 films annealed at 500 degrees C had higher sensitivity to i-C4H10 than the complex oxide films of ZnO and SnO2 because of fine crystallinity. The sensitivities of the complex oxide films increased with increasing annealing temperature from 600 to 800 degrees C, because of the improved crystallinity. Higher sensitivities were obtained by laminating the complex oxide films. Moreover, the gas selectivity of Zn-Sn complex oxide films for several kinds of gases was investigated. The Zn-Sn complex oxide film had a very high sensitivity to NO2 gas.
  CERAMIC SOC JAPAN-NIPPON SERAMIKKUSU KYOKAI, Japanese, Scientific journal
  DOI：https://doi.org/10.2109/jcersj.104.1048
  DOI ID：10.2109/jcersj.104.1048, ISSN：1882-0743, eISSN：1348-6535, Web of Science ID：WOS:A1996VU87200011
• High speed chemical image sensor with digital LAPS system　　　　　　　　　　　　　　　
  H. Uchida; W.Y. Zhang; T. Katsube
  Sensors and Actuators B: Chemical, Volume：34, Number：1-3, First page：446, Last page：449, Aug. 1996, [Reviewed]
  A high speed two-dimensional surface photovoltage (SPV) sensing system based on a digital data processing was developed and applied to an in-situ monitoring of chemical images. The SPV signal generated by a scanning light spot was directly memorized in a computer and signal integration of all measurement points was carried out in parallel in allocated memories by numerical calculation, which made it possible in principle to reduce the measurement time as short as the scanning time of the light spot. For the formation of the image of 6400 data points, the proposed system needs about 30 min which is at least one order of magnitude faster than that of a conventional analog SPV system.
  Elsevier, English, Scientific journal
  DOI：https://doi.org/10.1016/S0925-4005(96)01939-9
  DOI ID：10.1016/S0925-4005(96)01939-9, ISSN：0925-4005, CiNii Articles ID：80009334143, Web of Science ID：WOS:A1996WC20900042
• Highly sensitive taste sensor with a new differential LAPS method　　　　　　　　　　　　　　　
  Y. Sasaki; Y. Kanai; H. Uchida; T. Katsube
  Sensors and Actuators B: Chemical, Volume：25, Number：1-3, First page：819, Last page：822, Apr. 1995, [Reviewed]
  A new differential measurement method for a LAPS (light-addressable potentiometric sensor) has been developed and applied to fabricate an integrated taste sensor with artificial lipid membranes as the ion-sensitive material. The differential measurement procedure is based on a time-sharing technique, which makes it possible to achieve a very sensitive and highly stabilized response due to the noise-compensation effect. Sensitivity enhancement is further achieved by cancelling the base component of the differential response current. These techniques improve the sensitivity by at least two orders of magnitude compared to a conventional LAP system. The sensor shows highly sensitive responses to various taste substances, which makes it possible to identify a sweet taste through pattern-recognition routines. Miniaturization of the LAPS is also attained by using a small metal pseudo-reference electrode instead of a glass electrode.
  Elsevier, English, Scientific journal
  DOI：https://doi.org/10.1016/0925-4005(95)85182-8
  DOI ID：10.1016/0925-4005(95)85182-8, ISSN：0925-4005, CiNii Articles ID：30004030910, Web of Science ID：WOS:A1995RN87000113
• Integrated taste sensor using surface photovoltage technique　　　　　　　　　　　　　　　
  Y. Kanai; M. Shimizu; H. Uchida; H. Nakahara; C.G. Zhou; H. Maekawa; T. Katsube
  Sensors and Actuators B: Chemical, Volume：20, Number：2-3, First page：175, Last page：179, Jun. 1994, [Reviewed]
  Elsevier, English, Scientific journal
  DOI：https://doi.org/10.1016/0925-4005(94)01172-9
  DOI ID：10.1016/0925-4005(94)01172-9, ISSN：0925-4005
• Integrated biosensor employing a surface photovoltage technique　　　　　　　　　　　　　　　
  Masaaki Shimizu; Yasuyuki Kanai; Hidekazu Uchida; Teruaki Katsube
  Sensors and Actuators B: Chemical, Volume：20, Number：2-3, First page：187, Last page：192, Jun. 1994, [Reviewed]
  A monolithically integrated biosensor is constructed using a surface photovoltage (SPV) technique combined with a new patterning method for multiple enzyme integration. The SPV method provides a contactless sensing system leading to patterning flexibility. Photolithographical patterning methods using a water-soluble photo-crosslinkable polymer (copolymer of dimethylacrylamide and cinnamoyloxyethylmethacrylate) are applied to immobilize the enzyme on a semiconductor surface. For bonding the enzyme membrane to the semiconductor surface, photoreactive poly-(meta azide styrene) is used, which bonds covalently with both the enzyme membrane and substrate. A pen-printing method has also been proposed for the patterning of enzyme films, which provides a simple method suitable for mass production.
  Elsevier, English, Scientific journal
  DOI：https://doi.org/10.1016/0925-4005(94)01176-1
  DOI ID：10.1016/0925-4005(94)01176-1, ISSN：0925-4005, Web of Science ID：WOS:A1994PK67200017
• Light-addressable suspended-gate gas sensor　　　　　　　　　　　　　　　
  T. Sato; M. Shimizu; H. Uchida; T. Katsube
  Sensors and Actuators B: Chemical, Volume：20, Number：2-3, First page：213, Last page：216, Jun. 1994, [Reviewed]
  A light-addressable potentiometric sensing (LAPS) system has been applied to construct an oxygen sensor using a suspended-gate electrode. The sensor principally consists of an MIS structure, i.e., suspended gate/air gap/ LaF3/SiO2/Si. The use of the suspended gate makes it possible to realize a contactless sensing system, which provides a flexible structure to integrate multiple sensing elements on a single-chip semiconductor surface. The sensor shows a stable response at room temperature to oxygen partial-pressure changes in the range 0.25-1.0 atm. The fabrication conditions of the LaF3 film are also discussed.
  Elsevier, English, Scientific journal
  DOI：https://doi.org/10.1016/0925-4005(94)01174-5
  DOI ID：10.1016/0925-4005(94)01174-5, ISSN：0925-4005, Web of Science ID：WOS:A1994PK67200021

• タンパク質の高速分子育種を基盤技術とする先端バイオ産業の創出（都市エリア産学官連携促進事業 埼玉・圏央エリア）　　　　　　　　　　　　　　　
  内田 秀和; 長谷川 有貴
  Volume：1, First page：66, Last page：66, 2009
  type:text
  Japanese
  DOI：https://doi.org/10.24561/00016478
  DOI ID：10.24561/00016478, ISSN：1883-8278, CiNii Articles ID：120006388281
• An Amperometric Sensor for Chemical Imaging Using Photoconductive Organic Film　　　　　　　　　　　　　　　
  Takuya Hagiwara; Masataka Takazawa; Hidekazu Uchida; Yuki Hasegawa; Tamaki Yaji
  IEICE TRANSACTIONS ON ELECTRONICS, Volume：E91C, Number：12, First page：1863, Last page：1868, Dec. 2008
  We have developed an amperometric sensor employing a photoconductive organic thin film that enables the measurement of the two-dimensional distribution of redox current on a sensor surface. The sensor simply consists of photoconductive film and transparent electrode. A focused light beam through the transparent electrode excites the photoconductive film that leads to detect local redox current at the beam position. Intensity of the redox current depends on local concentration of redox species of solution on the sensor. We investigated several materials for the photoconductive film and found a suitable structure is Cu-phthalocyanine doped polyvinylcarbazole film/indium tin oxide/glass substrate. Compared with a conventional two-dimensional chemical sensor, our newly developed sensor can he prepared by lower cost fabrication methods without complex semiconductor processes. The sensor showed a good signal dependence on the concentration of K3Fe(CN)(6)/K4Fe(CN)(6) in an aqueous solution at 15.4 nA/dec at a constant bias voltage of 0.8 V. We measured the two-dimensional distribution of ions in an agarose gel of 2 mm thickness. The result showed a photograph of the diffusion process of redox species. We also discuss the discrimination of redox species like voltammetry.
  IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, English
  DOI：https://doi.org/10.1093/ietele/e91-c.12.1863
  DOI ID：10.1093/ietele/e91-c.12.1863, ISSN：0916-8524, eISSN：1745-1353, CiNii Articles ID：10026820340, Web of Science ID：WOS:000262010500007
• Development of high affinity peptides (peptide aptamers) for the seeds fordrug-discovery
  Md. Salimullah
  Volume：8, First page：31, Last page：31, 2007
  Japanese
  ISSN：1347-4758, CiNii Articles ID：120001371268
• 高速分子進化による高機能バイオ分子の創出（埼玉バイオプロジェクト）　　　　　　　　　　　　　　　
  西垣功一; 吉田昼也; 高橋進; 木下保則; 内田秀和; 北村幸一郎; 高橋陽子; 門脇知子; 山本健二
  Volume：8, First page：30, Last page：30, 2007
• 医薬シーズとしての特異的結合性ペプチド（ペプチドアプタマー）の開発
  西垣功一; Md. Salimullah; 二上雅恵; 木下保則; 内田秀和; 根本直人; 門脇知子; 山本健二
  埼玉大学地域共同研究センター紀要, Volume：8, First page：31, Last page：31, 2007
  Japanese
  ISSN：1347-4758, CiNii Articles ID：120001371268
• 高速分子進化による高機能バイオ分子の創出（埼玉バイオプロジェクト）　　　　　　　　　　　　　　　
  西垣功一; 吉田昼也; 高橋進; 木下保則; 内田秀和; 北村幸一郎; 高橋陽子; 門脇知子; 山本健二
  埼玉大学地域共同研究センター紀要, Volume：8, First page：30, Last page：30, 2007
• Creation of Highly Functional Biomolecules by Evolutionary Molecular Engineering (Saitama-Bio Project)
  Md. Salimullah
  Volume：7, First page：53, Last page：53, 2006
  Japanese
  ISSN：1347-4758, CiNii Articles ID：120001371310
• Fabrication and Measurement System for Microarray Using Digital Micromirror Device　　　　　　　　　　　　　　　
  N. Sato; Y. Hayashi; H. Uchida
  First page：109, Last page：113, 2006
• 高速分子進化による高機能バイオ分子の創出（埼玉バイオプロジェクト）
  西垣功一; 吉田昼也; 田山貴紘; 木下保則; 鈴木美穂; 内田秀和; 勝部昭明; 北村幸一郎; 高橋陽子; Md. Salimullah; 門脇知子; 山本健二
  埼玉大学地域共同研究センター紀要, Volume：7, First page：53, Last page：53, 2006
  Japanese
  ISSN：1347-4758, CiNii Articles ID：120001371310
• Fabrication and Measurement System for Microarray Using Digital Micromirror Device　　　　　　　　　　　　　　　
  N. Sato; Y. Hayashi; H. Uchida
  Proceedings of the 23rd Sensor Symposium, First page：109, Last page：113, 2006
• Generation of Functional Biomolecules By Evolutionary Molecular Engineering
  MD. Salimullah
  Volume：6, First page：83, Last page：83, 2005
  Japanese
  ISSN：1347-4758, CiNii Articles ID：120001371347
• 高速分子進化による高機能バイオ分子の創出（埼玉バイオプロジェクト）
  西垣功一; 北村幸一郎; 高橋―; 本多陽子; 木下保則; 吉田昼也; MD. Salimullah; 鈴木美穂; 内田秀和; 勝部昭明
  埼玉大学地域共同研究センター紀要, Volume：6, First page：83, Last page：83, 2005
  Japanese
  ISSN：1347-4758, CiNii Articles ID：120001371347
• Experimental and theoretical NOx physisorption analyses of mesoporous film (SBA-15 and SBA-16) constructed surface photo voltage (SPV) sensor
  Takeo Yamada; Haoshen Zhou; Hidekazu Uchida; Itaru Honma; Teruaki Katsube
  Journal of Physical Chemistry B, Volume：108, First page：13341, Last page：13346, 02 Sep. 2004
  Mesoporous silica films with hexagonal (SBA-15) and cubic (SBA-16) mesostructures have been successfully employed to fabricate surface photo voltage (SPY) sensors for NO2 gas. These SPV sensors exhibited better sensitivity (S) in 50 ppm NO2 gas than in 100 ppm NO gas. SPV with SBA-16 film showed better sensitivity in 1 ppm NO2 gas than in 1 ppm NO gas. These phenomena can be explained by the physical adsorption of the target gas into the mesoporous layer, which is regarded as the insulator layer in metal-insulator-semiconductor (MIS) devices.
  DOI：https://doi.org/10.1021/jp048597i
  DOI ID：10.1021/jp048597i, ISSN：1520-6106, SCOPUS ID：4444263251
• Gap-gate field effect gas sensing device for chemical image generation　　　　　　　　　　　　　　　
  D Filippini; Lundstrom, I; H Uchida
  APPLIED PHYSICS LETTERS, Volume：84, Number：15, First page：2946, Last page：2948, Apr. 2004
  A field effect chemically sensitive device, specially suited for the generation of scanning light pulse technique chemical images, is demonstrated. The present approach provides a complete separation between the required electrical biasing and chemical sensing functions inherently coupled in all previous systems. The concept is demonstrated by sensing hydrogen with insensitive biasing electrodes, composing a so-called gap gate, combined with discontinuous palladium clusters usually unsuitable for sensing in conventional arrangements. A simple one-dimensional model is used to explain the observed behavior. (C) 2004 American Institute of Physics.
  AMER INST PHYSICS, English
  DOI：https://doi.org/10.1063/1.1703838
  DOI ID：10.1063/1.1703838, ISSN：0003-6951, CiNii Articles ID：80016608651, Web of Science ID：WOS:000220728100076
• Surface Photo Voltage (SPV) Type NO, NO2 Gas Sensor Fabricated by Mesoporous Materials with Uniform Pore Size and Ordered Pore Structure
  Takeo Yamada; Hao Shen Zhou; Itaru Honma; Masato Tomita; Yuko Ueno; Hidekazu Uchida; Teruaki Katsube
  IEEJ Transactions on Sensors and Micromachines, Volume：123, First page：118, Last page：123, 01 Jan. 2003
  The mesoporous materials SBA-15 and SBA-16 from the self-assembled template organic framework inorganic compound materials are successfully prepared with powder and film states. The powder state of mesoporous material exhibit a variety of properties and possibilities of these kinds of materials. The film state of these SBA-15 and SBA-16 are successfully fabricated into the surface photo voltage (SPV) type gas sensor device as a gas adsorption insulator layer. These kinds of gas sensors device exhibit NO and NO2 gas sensing properties dependent on their mesoporous film structure. We are succeeded in indication about a possibility of mesoporous silicate film for the SPV type gas sensor application. Keywords: mesoporous silicate, SBA-15, SBA-16, NO, NO2, gas sensor, Surface Photo Voltage. © 2003, The Institute of Electrical Engineers of Japan. All rights reserved.
  DOI：https://doi.org/10.1541/ieejsmas.123.118
  DOI ID：10.1541/ieejsmas.123.118, ISSN：1341-8939, SCOPUS ID：85009643400
• A possibility of block-copolymer templated mesoporous silica films applied to surface photo voltage (SPV) type NOxgas sensor
  T. Yamada; H. S. Zhou; H. Uchida; M. Tomita; Y. Ueno; T. Katsube; I. Honma
  Studies in Surface Science and Catalysis, Volume：146, First page：783, Last page：786, 01 Dec. 2002
  A self-ordered hexagonal and cubic-like mesoporous silica film has been successfully fabricated from a Metal-Insulator-Semiconductor device applied to a Nitrogen oxides (NOx) gas sensor based on the surface photo voltage system. These self-ordered mesoporous silica films are synthesized by using a nonionic triblock copolymer surfactant as a template in spin coating. The sensing characteristics as a NOxgas sensor are dependent on both mesostructures and exposure gases. © 2003 Elsevier Science B. V. All rights reserved.
  DOI：https://doi.org/10.1016/S0167-2991(03)80500-1
  DOI ID：10.1016/S0167-2991(03)80500-1, ISSN：0167-2991, SCOPUS ID：21244457353
• Application of a cubic-like mesoporous silica film to a surface photovoltage gas sensing system
  T. Yamada; T. Yamada; H. S. Zhou; H. Uchida; M. Tomita; Y. Ueno; I. Honma; K. Asai; T. Katsube
  Microporous and Mesoporous Materials, Volume：54, First page：269, Last page：276, 22 Jul. 2002
  A self-ordered cubic-like mesoporous silica film has been successfully fabricated in a metal-insulator-semiconductor (=Au/SiO2 (cubic-like meso)/Si3N4/SiO2/Si) device based on the surface photovoltage (SPV) system and applied to an NO gas sensor. The self-ordered cubic-like mesoporous silica film is synthesized by using as a template in spin coating a nonionic poly(ethylene oxide)-poly(propylene oxide)-poly(ethylene oxide) (PEO100-PPO65-PEO100) type triblock copolymer surfactant. The sensing characteristics of the self-ordered cubic-like mesoporous SPV system have been investigated by repeated exposure to 100 ppm NO gas and standard air, as well as observation of the alternating (photo) current, which resulted from the physical adsorption and chemical interactions between detected NO gas and the self-ordered cubic-like mesoporous film. In sensing NO gas, this cubic-like mesoporous SPV system exhibits a response nearly five times larger than that of a simple SPV sensor without mesoporous silica film. Even at room temperature, this mesoporous SPV system exhibits a recoverable response. These results can be explained by the characteristics of the cubic-like mesoporous silica film including large surface area and a bi-continuous mesopore structure. This kind of mesoporous film has a great potential for application to highly sensitive and responsive gas sensors. © 2002 Elsevier Science Inc. All rights reserved.
  DOI：https://doi.org/10.1016/S1387-1811(02)00387-6
  DOI ID：10.1016/S1387-1811(02)00387-6, ISSN：1387-1811, SCOPUS ID：0037157853
• An application possibility of self-ordered mesoporous silicate for surface photo voltage (SPV) type NO gas sensor (II): Self-ordered mesoporous silicate incorporated SPV device and its sensing property dependence on mesostructure　　　　　　　　　　　　　　　
  T Yamada; HS Zhou; H Uchida; M Tomita; Y Ueno; K Asai; Honma, I; T Katsube
  IEICE TRANSACTIONS ON ELECTRONICS, Volume：E85C, Number：6, First page：1304, Last page：1310, Jun. 2002
  Self-ordered mesoporous silicate films from organic-inorganic compound materials are successfully fabricated into the surface photo voltage (SPV) type gas sensor device as a gas adsorption insulator layer. These kinds of gas sensors device exhibit NO gas sensing property dependent on their mesoporous film structure. We are succeeded in indication about a possibility of mesoporous silicate film for the SPV type gas sensor application.
  IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, English
  ISSN：0916-8524, eISSN：1745-1353, Web of Science ID：WOS:000176650800017
• An application possibility of self-ordered mesoporous silicate for surface photo voltage type NO gas sensor (I): The characterization of nonionic triblock copolymer templated self-ordered mesoporous silicates and preparation their film for device application　　　　　　　　　　　　　　　
  T Yamada; HS Zhou; H Uchida; M Tomita; Y Ueno; K Asai; Honma, I; T Katsube
  IEICE TRANSACTIONS ON ELECTRONICS, Volume：E85C, Number：6, First page：1298, Last page：1303, Jun. 2002
  The mesoporous materials from the self-assembled organic-inorganic compound materials have great possibilities for a variety of applications. However. to make use of these kinds of materials effectively, they must be controlled. In this paper, we are succeeded in powder state pore size control and in significantly fabrication film state for device application use.
  IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, English
  ISSN：0916-8524, eISSN：1745-1353, Web of Science ID：WOS:000176650800016
• An application possibility of self-ordered mesoporous silicate for surface photo voltage (SPV) type NO gas sensor (II): Self-ordered mesoporous silicate incorporated SPV device and its sensing property dependence on mesostructure　　　　　　　　　　　　　　　
  T Yamada; HS Zhou; H Uchida; M Tomita; Y Ueno; K Asai; Honma, I; T Katsube
  IEICE TRANSACTIONS ON ELECTRONICS, Volume：E85C, Number：6, First page：1304, Last page：1310, Jun. 2002
  Self-ordered mesoporous silicate films from organic-inorganic compound materials are successfully fabricated into the surface photo voltage (SPV) type gas sensor device as a gas adsorption insulator layer. These kinds of gas sensors device exhibit NO gas sensing property dependent on their mesoporous film structure. We are succeeded in indication about a possibility of mesoporous silicate film for the SPV type gas sensor application.
  IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, English
  ISSN：0916-8524, eISSN：1745-1353, Web of Science ID：WOS:000176650800017
• An application possibility of self-ordered mesoporous silicate for surface photo voltage type NO gas sensor (I): The characterization of nonionic triblock copolymer templated self-ordered mesoporous silicates and preparation their film for device application　　　　　　　　　　　　　　　
  T Yamada; HS Zhou; H Uchida; M Tomita; Y Ueno; K Asai; Honma, I; T Katsube
  IEICE TRANSACTIONS ON ELECTRONICS, Volume：E85C, Number：6, First page：1298, Last page：1303, Jun. 2002
  The mesoporous materials from the self-assembled organic-inorganic compound materials have great possibilities for a variety of applications. However. to make use of these kinds of materials effectively, they must be controlled. In this paper, we are succeeded in powder state pore size control and in significantly fabrication film state for device application use.
  IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, English
  ISSN：0916-8524, eISSN：1745-1353, Web of Science ID：WOS:000176650800016
• NO and NO2gas sensors based on surface photovoltage system fabricated by self-ordered mesoporous silicate film
  Hao Shen Zhou; Takeo Yamada; Takeo Yamada; Keisuke Asai; Itaru Honma; Hidekazu Uchida; Teruaki Katsube
  Studies in Surface Science and Catalysis, Volume：141, First page：623, Last page：630, 01 Jan. 2002
  The first NO and NO2gas sensors based on surface photo-voltage (SPV) semiconductor device system are fabricated by the metal/ SiO2(self-ordered hexagonal mesoporous)- /Si3N4/SiO2/Si structure. Size controlled silicate hexagonal mesoporous film is successfully synthesized by spin coating on a Si3N4SiO2/Si silicon wafer using poly (ethylene oxide)-poly (propylene oxide)-poly (ethylene oxide) (Pluronic P123=EO20PO70EO20) triblock copolymers as a template. The characteristics of mesoporous film are investigated in XRD, TEM. The sensing properties of the self-ordered hexagonal mesoporous SPV system have been investigated by exposing to the NO or NO2gas and air repeatedly. The changes of the average value and phase of the AC photocurrent (Iph) have been observed between the NO or NO2gas and air. The response of the alternatively photocurrent is resulted from the physical adsorption and chemical interaction between detected NO or NO2gas and the self-ordered hexagonal mesoporous film.
  DOI：https://doi.org/10.1016/S0167-2991(02)80598-5
  DOI ID：10.1016/S0167-2991(02)80598-5, ISSN：0167-2991, SCOPUS ID：0036928929
• NO gas sensor based on surface photovoltage system fabricated by self-ordered hexagonal mesoporous silicate film　　　　　　　　　　　　　　　
  HS Zhou; T Yamada; K Asai; Honma, I; H Uchida; T Katsube
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Volume：40, Number：12, First page：7098, Last page：7102, Dec. 2001
  The first reported NO gas sensor based on a surface photovoltage (SPV) semiconductor device system is fabricated with a metal/SiO2 (self-ordered hexagonal mesoporous)/Si3N4/SiO2/Si structure (MIS). A size controlled silicate mesoporous film is successfully synthesized by spin coating on a Si3N4/SiO2/Si silicon wafer using poly(ethylene oxide)-poly(propylene oxide)poly(ethylene oxide) (Pluronic P123 = EO20PO70EO20) triblock copolymers as a template. The characteristics of the mesoporous films were investigated by X-ray diffraction (XRD) and transmission electron microscope (TEM). The sensing properties of the self-ordered hexagonal mesoporous SPV system have been investigated by repeated exposure to NO gas and air. The changes in the average value and phase of the AC photocurrent (I-ph) have been observed after exposure of the films to 100 ppm NO gas. The response of the alternative photocurrent results from the Physical adsorption and chemical interaction between detected NO gases and the self-ordered hexagonal mesoporous film.
  INST PURE APPLIED PHYSICS, English
  DOI：https://doi.org/10.1143/JJAP.40.7098
  DOI ID：10.1143/JJAP.40.7098, ISSN：0021-4922, CiNii Articles ID：30021823943, Web of Science ID：WOS:000175190700085
• NO gas sensor based on surface photovoltage system fabricated by self-ordered hexagonal mesoporous silicate film　　　　　　　　　　　　　　　
  HS Zhou; T Yamada; K Asai; Honma, I; H Uchida; T Katsube
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Volume：40, Number：12, First page：7098, Last page：7102, Dec. 2001
  The first reported NO gas sensor based on a surface photovoltage (SPV) semiconductor device system is fabricated with a metal/SiO2 (self-ordered hexagonal mesoporous)/Si3N4/SiO2/Si structure (MIS). A size controlled silicate mesoporous film is successfully synthesized by spin coating on a Si3N4/SiO2/Si silicon wafer using poly(ethylene oxide)-poly(propylene oxide)poly(ethylene oxide) (Pluronic P123 = EO20PO70EO20) triblock copolymers as a template. The characteristics of the mesoporous films were investigated by X-ray diffraction (XRD) and transmission electron microscope (TEM). The sensing properties of the self-ordered hexagonal mesoporous SPV system have been investigated by repeated exposure to NO gas and air. The changes in the average value and phase of the AC photocurrent (I-ph) have been observed after exposure of the films to 100 ppm NO gas. The response of the alternative photocurrent results from the Physical adsorption and chemical interaction between detected NO gases and the self-ordered hexagonal mesoporous film.
  INST PURE APPLIED PHYSICS, English
  DOI：https://doi.org/10.1143/JJAP.40.7098
  DOI ID：10.1143/JJAP.40.7098, ISSN：0021-4922, CiNii Articles ID：30021823943, Web of Science ID：WOS:000175190700085
• Cholinesterase-based biosensor using surface photovoltage technique　　　　　　　　　　　　　　　
  OV Fedosseeva; H Uchida; T Katsube; Y Ishimaru; T Iida
  ELECTROCHEMISTRY, Volume：67, Number：7, First page：755, Last page：759, Jul. 1999
  The new measurement method of Surface Photovoltage (SPV) technique was applied to the fabrication of a novel type cholinesterase-based biosensor. Cholinesterases (butyrylcholine esterase (BuChE) and acetylcholine esterase (AChE)) have been immobilized directly onto the semiconductor surface to measure the concentration of enzyme substrates, via pH changes. The detection limits of the substrates were 9.0 x 10(-7) M, 2.7 X 10(-6) M and 4.1 x 10(-6) M for butyrylthiocholine iodide, acetylcholine iodide and acetylcholine chloride, respectively. The analytical possibilities were examined from the results of the inhibiting actions exerted in the presence of alkaloids such as physostigmine sulfate and neostigmine bromide on BuChE.
  ELECTROCHEMICAL SOC JAPAN, English
  ISSN：1344-3542, Web of Science ID：WOS:000081506800004
• Dynamic photocurrent images of a gas sensing surface　　　　　　　　　　　　　　　
  EA De Vasconcelos; H Uchida; WY Zhang; T Katsube
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Volume：38, Number：5A, First page：2893, Last page：2898, May 1999
  A high-speed surface photovoltage technique which uses a numerically processed parallel lock-in amplifier was applied to obtain olfactory images. This high-speed system has measurement time short enough to allow the observation of the time evolution of gas response patterns. Representative images are presented and some of their characteristic features, such as the influence of gas type and the direction of gas flow, are discussed. Possible directions for further improvement of the system are also discussed. The capability to obtain dynamic photocurrent images is an important step towards real-time visualization and further development of olfactory camera technology.
  JAPAN J APPLIED PHYSICS, English
  DOI：https://doi.org/10.1143/JJAP.38.2893
  DOI ID：10.1143/JJAP.38.2893, ISSN：0021-4922, CiNii Articles ID：110003907309, Web of Science ID：WOS:000081575500045
• Dynamic photocurrent images of a gas sensing surface　　　　　　　　　　　　　　　
  EA De Vasconcelos; H Uchida; WY Zhang; T Katsube
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Volume：38, Number：5A, First page：2893, Last page：2898, May 1999
  A high-speed surface photovoltage technique which uses a numerically processed parallel lock-in amplifier was applied to obtain olfactory images. This high-speed system has measurement time short enough to allow the observation of the time evolution of gas response patterns. Representative images are presented and some of their characteristic features, such as the influence of gas type and the direction of gas flow, are discussed. Possible directions for further improvement of the system are also discussed. The capability to obtain dynamic photocurrent images is an important step towards real-time visualization and further development of olfactory camera technology.
  JAPAN J APPLIED PHYSICS, English
  DOI：https://doi.org/10.1143/JJAP.38.2893
  DOI ID：10.1143/JJAP.38.2893, ISSN：0021-4922, CiNii Articles ID：110003907309, Web of Science ID：WOS:000081575500045

• 内田秀和 他113名 MEMS/NEMS工学全集　　　　　　　　　　　　　　　
  2009
• 内田秀和 他113名 MEMS/NEMS工学全集　　　　　　　　　　　　　　　
  テクノシステム, 2009
• 内田秀和 他122名 バイオセンサ・ケミカルセンサ事典　　　　　　　　　　　　　　　
  2007
  ISBN：9784924728547
• 内田秀和 他122名 バイオセンサ・ケミカルセンサ事典　　　　　　　　　　　　　　　
  テクノシステム, 2007
  ISBN：9784924728547

• 高密度マイクロリアクターセル分析システムの開発　　　　　　　　　　　　　　　
  2007
• 高密度マイクロリアクターセル分析システムの開発　　　　　　　　　　　　　　　
  2007
• 水晶振動子センサを用いた初期火災センシングシステムの開発　　　　　　　　　　　　　　　
  2007
• 高密度マイクロリアクターセル分析システムの開発　　　　　　　　　　　　　　　
  総合研究機構研究プロジェクト成果発表会 : ポスター展示, 2007
• 高密度マイクロリアクターセル分析システムの開発　　　　　　　　　　　　　　　
  総合研究機構研究プロジェクト研究成果報告書, 2007
• 水晶振動子センサを用いた初期火災センシングシステムの開発　　　　　　　　　　　　　　　
  電気学会研究会資料, 2007
• Fabrication and fluorescence measurement system for microarray using Digital Micromirror Device　　　　　　　　　　　　　　　
  2006
• 光導電性高分子薄膜を用いた新しい化学画像センサ　　　　　　　　　　　　　　　
  2006
• Fabrication and fluorescence measurement system for microarray using Digital Micromirror Device　　　　　　　　　　　　　　　
  電子情報通信学会技術研究報告, 2006
• 光導電性高分子薄膜を用いた新しい化学画像センサ　　　　　　　　　　　　　　　
  電子情報通信学会技術研究報告, 2006
• Dissolved gas image sensor using two dimensional SPV technique　　　　　　　　　　　　　　　
  1999
• Dissolved gas image sensor using two dimensional SPV technique　　　　　　　　　　　　　　　
  Transducers'99 The 10th Intern. Conference on Solid-State Sensors and Actuators, 1999

• -

• 有機光導電性薄膜を用いた化学センサ　　　　　　　　　　　　　　　
  2006
  Competitive research funding
• Chemical Sensors using Organic Photoconductive Film　　　　　　　　　　　　　　　
  Grants and Funding, 2006
  -
  Competitive research funding
• マイクロリアクターアレイの高速測定技術に関する研究　　　　　　　　　　　　　　　
  2003
  Competitive research funding
• -　　　　　　　　　　　　　　　
  Grants and Funding, 2003
  -
  Competitive research funding
• 嗅覚センサ　　　　　　　　　　　　　　　
  2001
  Competitive research funding
• Odor Sensors　　　　　　　　　　　　　　　
  2001
  -
  Competitive research funding
• 表面光電圧法を用いた化学センサ　　　　　　　　　　　　　　　
  1987 - 2000
  Competitive research funding
• Chemical Sensors using Surface Photovoltage Measurement　　　　　　　　　　　　　　　
  Grants and Funding, 1987 - 2000
  -
  Competitive research funding