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清水 麻希（シミズ マキ）
| 理工学研究科 数理電子情報部門 | 助教 |
| 工学部 電気電子物理工学科 |
業績情報
■ 論文- Ar/N2混合雰囲気中RFマグネトロンスパッタリング法で作製したアモルファスSnO2:N薄膜の特性評価
川口拓真; 大石竜嗣; 清水麻希; 土方泰斗; 相川慎也
電気学会論文誌 C, 巻：144, 号：11, 2024年11月, ［査読有り］
ISSN：0385-4221, J-Global ID：202402262108223225 - Thermoelectric measurements of nanomaterials by nanodiamond quantum thermometry
Maki Shimizu; Koki Sugimoto; Yasuto Hijikata
APPLIED PHYSICS EXPRESS, 巻：17, 号：9, 2024年09月, ［査読有り］
In this study, the Seebeck coefficient of a single-walled carbon nanotube (SWCNT) was evaluated using a nitrogen vacancy center in nanodiamonds as a thermometer. A temperature gradient was established across the SWCNT, and the temperatures of the nanodiamonds on the electrodes, along with the electromotive force between these electrodes, were measured. The Seebeck coefficient for a metallic SWCNT was determined to be 14.0 +/- 1.1 mu V K-1, which is consistent with results reported in previous studies. This methodology offers a promising approach for evaluating the thermoelectric properties of various nanomaterials.
IOP Publishing Ltd, 英語, 研究論文（学術雑誌）
DOI：https://doi.org/10.35848/1882-0786/ad6fe9
DOI ID：10.35848/1882-0786/ad6fe9, ISSN：1882-0778, eISSN：1882-0786, Web of Science ID：WOS:001308935300001 - Charge states of nitrogen-vacancy centers in Fermi level controlled diamond n-i-n junctions
M. Shimizu; T. Makino; H. Kato; M. Fujiwara; M. Ogura; N. Mizuochi; M. Hatano
Journal of Applied Physics, 2023年06月
研究論文（学術雑誌）
DOI：https://doi.org/10.1063/5.0148921
DOI ID：10.1063/5.0148921, ORCID：138427471 - The Influence of Oxygen‐Related Defects on the Formation of In2O3‐Based Low‐Fluorescence Transparent Conducting Film
Maki Shimizu; Masataka Shugo; Shun Mori; Yasuto Hijikata; Shinya Aikawa
physica status solidi (a), 2023年06月, ［査読有り］
研究論文（学術雑誌）
DOI：https://doi.org/10.1002/pssa.202200896
DOI ID：10.1002/pssa.202200896, ORCID：138427468 - Charge state control by band engineering
Toshiharu Makino; Hiromitsu Kato; Maki Shimizu; Mutsuko Hatano; Norikazu Mizuochi
DIAMOND FOR QUANTUM APPLICATIONS, PT 1, 巻：103, 開始ページ：137, 終了ページ：159, 2020年
ELSEVIER ACADEMIC PRESS INC, 英語, 研究論文（学術雑誌）
DOI：https://doi.org/10.1016/bs.semsem.2020.03.005
DOI ID：10.1016/bs.semsem.2020.03.005, ISSN：0080-8784, Web of Science ID：WOS:000609240800006 - 垂直配向カーボンナノチューブを用いた最大静止摩擦力の測定
福田美実; 福田美実; 井上枝実; 四本松康太; 清水麻希; 本間芳和; 本間芳和
表面と真空, 巻：62, 号：1, 2019年
ISSN：2433-5835, J-Global ID：201902288489820950 - Terahertz Spectroscopy of Individual Carbon Nanotube Quantum Dots
Takuma Tsurugaya; Kenji Yoshida; Fumiaki Yajima; Maki Shimizu; Yoshikazu Homma; Kazuhiko Hirakawa
NANO LETTERS, 巻：19, 号：1, 開始ページ：242, 終了ページ：246, 2019年01月
We have investigated the electronic structures of metallic carbon nanotube quantum dots (CNT QDs) by terahertz-induced photocurrent spectroscopy. Sharp peaks due to intersublevel transitions in the CNT QDs are observed at the sublevel energy spacings expected from the linear band dispersion. The line width of the photocurrent peak is as narrow as 0.3 meV and is governed by the tunnel coupling with the electrodes, indicating that the scattering time of electrons in the present CNTs is comparable to or longer than 10 ps. The observation of a sharp absorption peak at the bare quantization energy was not consistent with the Tomonaga-Luttinger liquid theory.
AMER CHEMICAL SOC, 英語, 研究論文（学術雑誌）
DOI：https://doi.org/10.1021/acs.nanolett.8b03801
DOI ID：10.1021/acs.nanolett.8b03801, ISSN：1530-6984, eISSN：1530-6992, Web of Science ID：WOS:000455561300030 - Engineering of Fermi level by nin diamond junction for control of charge states of NV centers
T. Murai; T. Makino; H. Kato; M. Shimizu; T. Murooka; E. D. Herbschleb; Y. Doi; H. Morishita; M. Fujiwara; M. Hatano; S. Yamasaki; N. Mizuochi
APPLIED PHYSICS LETTERS, 巻：112, 号：11, 2018年03月
The charge-state control of nitrogen-vacancy (NV) centers in diamond is very important toward its applications because the NV centers undergo stochastic charge-state transitions between the negative charge state (NV-) and the neutral charge state (NV0) of the NV center upon illumination. In this letter, engineering of the Fermi level by a nin diamond junction was demonstrated for the control of the charge state of the NV centers in the intrinsic (i) layer region. By changing the size (d) of the i-layer region between the phosphorus-doped n-type layer regions (nin) from 2 mu m to 10 mu m, we realized the gradual change in the NV- charge-state population in the i-layer region from 60% to 80% under 532 nm excitation, which can be attributed to the band bending in the i-layer region. Also, we quantitatively simulated the changes in the Fermi level in the i-layer region depending on d with various concentrations of impurities in the i-layer region. Published by AIP Publishing.
AMER INST PHYSICS, 英語, 研究論文（学術雑誌）
DOI：https://doi.org/10.1063/1.5010956
DOI ID：10.1063/1.5010956, ISSN：0003-6951, eISSN：1077-3118, Web of Science ID：WOS:000428456800014 - Charge-state control of ensemble of nitrogen vacancy centers by n-i-n diamond junctions
Maki Shimizu; Toshiharu Makino; Takayuki Iwasaki; Kosuke Tahara; Hiromitsu Kato; Norikazu Mizuochi; Satoshi Yamasaki; Mutsuko Hatano
APPLIED PHYSICS EXPRESS, 巻：11, 号：3, 2018年03月
We fabricated n-type-intrinsic-n-type (n-i-n) diamond junctions to stabilize negatively charged nitrogen vacancy (NV%) centers. An ensemble of NV centers was generated in a high-purity intrinsic diamond in order to maintain the spin coherence time. The Fermi-energy of the i-layers was controlled by band bending at the two n-i junctions. We confirmed that the NV centers can be modulated toward NV% centers by decreasing the width of the i-layers between adjacent n-layers. The spin coherence time for the NV% centers was maintained even for narrow i-layers. (C) 2018 The Japan Society of Applied Physics
IOP PUBLISHING LTD, 英語, 研究論文（学術雑誌）
DOI：https://doi.org/10.7567/APEX.11.033004
DOI ID：10.7567/APEX.11.033004, ISSN：1882-0778, eISSN：1882-0786, Web of Science ID：WOS:000425746000001 - カーボンナノチューブのオゾンによる損傷の評価
石川諒; 石川諒; 中野尭雄; 中野尭雄; 島龍之介; 清水麻希; 本間芳和; 本間芳和
表面と真空, 巻：61, 号：12, 2018年
ISSN：2433-5835, J-Global ID：201802215298572008 - Effect of interfacial water formed between graphene and SiO2/Si substrate
Tomohiro Koyama; Takumi Inaba; Katsuyoshi Komatsu; Satoshi Moriyama; Maki Shimizu; Yoshikazu Homma
APPLIED PHYSICS EXPRESS, 巻：10, 号：7, 2017年07月
Interfacial water can exist between graphene and a substrate surface in ambient air. The effects of water on the electrical properties of graphene are complex and depend on the substrate material. We investigated the effects of interfacial water formed between graphene and a SiO2/Si substrate according to the Raman spectra. The effect of the interfacial water was influenced by the hydrophilicity of the SiO2 surface. While the interfacial water inhibited the charge transfer between graphene and SiO2, it induced hole-doping in graphene because of the dipole moment of the water molecules aligned on the highly hydrophilic SiO2 surface. (C) 2017 The Japan Society of Applied Physics
IOP PUBLISHING LTD, 英語, 研究論文（学術雑誌）
DOI：https://doi.org/10.7567/APEX.10.075102
DOI ID：10.7567/APEX.10.075102, ISSN：1882-0778, eISSN：1882-0786, Web of Science ID：WOS:000404262700001 - Raman imaging of millimeter-long carbon nanotubes grown by a gas flow method
Katsuya Kihara; Akihiro Ishitani; Tomohiro Koyama; Mamoru Fukasawa; Takumi Inaba; Maki Shimizu; Yoshikazu Homma
APPLIED PHYSICS EXPRESS, 巻：10, 号：2, 2017年02月
Growing long carbon nanotubes (CNTs) is an important prerequisite for practical applications of CNTs. Although gas-flow-guided chemical vapor deposition can be used to produce millimeter-long CNTs, little is known regarding the associated growth mechanism. In the present work, Raman imaging was employed to characterize individual CNTs grown by the gas flow method, and Raman images of a CNT over 1.6mm long were obtained. Two radial breathing modes were observed and the associated Raman images exhibited exactly identical distributions, indicating that the long CNT most likely had a double-walled structure, in which the CNT diameter was uniform along the whole length. (C) 2017 The Japan Society of Applied Physics
IOP PUBLISHING LTD, 英語, 研究論文（学術雑誌）
DOI：https://doi.org/10.7567/APEX.10.025103
DOI ID：10.7567/APEX.10.025103, ISSN：1882-0778, eISSN：1882-0786, Web of Science ID：WOS:000395448900001 - Correlation between active layer thickness and ambient gas stability in IGZO thin-film transistors erg
Xu Gao; Meng-Fang Lin; Bao-Hua Mao; Maki Shimizu; Nobuhiko Mitoma; Takio Kizu; Wei Ou-Yang; Toshihide Nabatame; Zhi Liu; Kazuhito Tsukagoshi; Sui-Dong Wang
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 巻：50, 号：2, 2017年01月
Decreasing the active layer thickness has been recently reported as an alternative way to achieve fully depleted oxide thin-film transistors for the realization of low-voltage operations. However, the correlation between the active layer thickness and device resistivity to environmental changes is still unclear, which is important for the optimized design of oxide thin-film transistors. In this work, the ambient gas stability of IGZO thin-film transistors is found to be strongly correlated to the IGZO thickness. The TFT with the thinnest IGZO layer shows the highest intrinsic electron mobility in a vacuum, which is greatly reduced after exposure to O-2/air. The device with a thick IGZO layer shows similar electron mobility in O-2/air, whereas the mobility variation measured in the vacuum is absent. The thickness dependent ambient gas stability is attributed to a high-mobility region in the IGZO surface vicinity with less sputtering-induced damage, which will become electron depleted in O-2/air due to the electron transfer to adsorbed gas molecules. The O-2 adsorption and deduced IGZO surface band bending is demonstrated by the ambient-pressure x-ray photoemission spectroscopy results.
IOP PUBLISHING LTD, 英語, 研究論文（学術雑誌）
DOI：https://doi.org/10.1088/1361-6463/50/2/025102
DOI ID：10.1088/1361-6463/50/2/025102, ISSN：0022-3727, eISSN：1361-6463, Web of Science ID：WOS:000402605800002 - Charge state modulation of nitrogen vacancy centers in diamond by applying a forward voltage across a p-i--n junction
M. Shimizu; T. Makino; T. Iwasaki; J. Hasegawa; K. Tahara; W. Naruki; H. Kato; S. Yamasaki; M. Hatano
DIAMOND AND RELATED MATERIALS, 巻：63, 開始ページ：192, 終了ページ：196, 2016年03月
Charge state control of the nitrogen vacancy center (NV center) in diamond is important to the realization of applications such as magnetometers or quantum information processing, because only negatively charged NV centers have attractive spin properties. We fabricated p-i-n (p-type-intrinsic-n-type) junctions to investigate the charge state properties of the NV centers in an ultrapure i-layer with a low impurity concentration. The photoluminescence of the ensemble of NV centers demonstrated that the charge state can be modulated by external voltage across the p-i-n junction. The charge state of the NV centers was tuned towards NV- by applying a forward bias below the built-in voltage. (C) 2015 Elsevier B.V. All rights reserved.
ELSEVIER SCIENCE SA, 英語, 研究論文（学術雑誌）
DOI：https://doi.org/10.1016/j.diamond.2015.10.022
DOI ID：10.1016/j.diamond.2015.10.022, ISSN：0925-9635, eISSN：1879-0062, Web of Science ID：WOS:000371942700035 - Fabrication of diamond lateral p-n junction diodes on (111) substrates
Kazuki Sato; Takayuki Iwasaki; Maki Shimizu; Hiromitsu Kato; Toshiharu Makino; Masahiko Ogura; Daisuke Takeuchi; Satoshi Yamasaki; Mutsuko Hatano
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 巻：212, 号：11, 開始ページ：2548, 終了ページ：2552, 2015年11月
Diamond lateral p-n junctions were fabricated on (111) substrates by selective growth of n-type diamond around a p-type layer. We investigated the effects of both the step-flow growth direction of n-type diamond and the crystal face of the p-type sidewalls on the structure and electrical properties of the lateral p-n junctions. The direction of the step-flow growth clearly influenced the morphologies of the p-n junctions. We also found that the crystal faces of the p-type sidewalls had an effect on the quality of the lateral p-n junctions. The two facing p-n junctions obtained in this study becomes an n-p-n structure, which could be a key structure for metal-oxide-semiconductor field-effect transistors with an inversion channel. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
WILEY-V C H VERLAG GMBH, 英語, 研究論文（学術雑誌）
DOI：https://doi.org/10.1002/pssa.201532266
DOI ID：10.1002/pssa.201532266, ISSN：1862-6300, eISSN：1862-6319, Web of Science ID：WOS:000366588100026 - Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
Kazunori Kurishima; Toshihide Nabatame; Maki Shimizu; Nobuhiko Mitoma; Takio Kizu; Shinya Aikawa; Kazuhito Tsukagoshi; Akihiko Ohi; Toyohiro Chikyow; Atsushi Ogura
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 巻：33, 号：6, 2015年11月
To investigate the influence of ionic/covalent interface of Al2O3/SiO2 gate insulator on the electrical properties of thin-film transistors (TFTs) with ionic Ga-In-Zn-O (GIZO) semiconducting channel layers, Al2O3 layers of different thickness were introduced between SiO2 and GIZO using plasma-enhanced atomic layer deposition. The GIZO layers were obtained by DC magnetron sputtering using a GIZO target (Ga: In: Zn = 1: 1: 1 mol. %). The GIZO TFTs with an Al2O3/SiO2 gate insulator exhibited positive threshold voltage (V-th) shift (about 1.1 V), V-th hysteresis suppression (0.23 V), and electron mobility degradation (about 13%) compared with those of a GIZO TFT with SiO2 gate insulator by the influence of ionic/ionic and ionic/covalent interface at Al2O3/GIZO and Al2O3/SiO2, respectively. To clarify the origin of the positive V-th shift, the authors estimated the shifts of flatband voltage (0.4 V) due to the dipole and the fixed charge (-1.1 x 10 11 /cm(2)) at Al2O3/SiO2 interface, from capacitance-voltage data for Pt/Al2O3/SiO2/p-Si capacitors. Based on these experimental data, the authors found that the positive V-th shift (1.1 V) could be divided into three components: the dipole (-0.4 V) and fixed charge (0.15 V) at the SiO2/Al2O3 interface, and the fixed charge (1.35 V) at the Al2O3/GIZO interface. Finally, it is noted that heterointerface of SiO2/Al2O3/GIZO stacks is important not only to recognize mechanism of V-th shift but also to design future TFTs with high-k dielectrics and low operating voltage. (C) 2015 American Vacuum Society.
A V S AMER INST PHYSICS, 英語, 研究論文（学術雑誌）
DOI：https://doi.org/10.1116/1.4928763
DOI ID：10.1116/1.4928763, ISSN：0734-2101, eISSN：1520-8559, Web of Science ID：WOS:000365503800040 - Improvement of fluorescence intensity of nitrogen vacancy centers in self-formed diamond microstructures
S. Furuyama; K. Tahara; T. Iwasaki; M. Shimizu; J. Yaita; M. Kondo; T. Kodera; M. Hatano
APPLIED PHYSICS LETTERS, 巻：107, 号：16, 2015年10月
We present umbrella-shaped diamond microstructures with metal mirrors at the bottom in order to improve the amount of collected photons from nitrogen vacancy centers. The metal mirrors at the bottom are self-aligned to the umbrella-shaped diamond microstructures which are selectively grown through holes created on a metal mask. By the finite-difference time-domain simulations, we found that the umbrella-shaped microstructures, which have an effect similar to solid immersion lens, could collect photons more efficiently than bulk or pillar-shaped microstructures. Improvement of the fluorescence intensity by factors of from 3 to 5 is shown experimentally. (C) 2015 AIP Publishing LLC.
AMER INST PHYSICS, 英語, 研究論文（学術雑誌）
DOI：https://doi.org/10.1063/1.4933103
DOI ID：10.1063/1.4933103, ISSN：0003-6951, eISSN：1077-3118, Web of Science ID：WOS:000363781900024 - Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability
Takio Kizu; Shinya Aikawa; Nobuhiko Mitoma; Maki Shimizu; Xu Gao; Meng-Fang Lin; Toshihide Nabatame; Kazuhito Tsukagoshi
APPLIED PHYSICS LETTERS, 巻：104, 号：15, 2014年04月
Thin-film transistors (TFTs) with a high stability and a high field-effect mobility have been achieved using W-doped indium oxide semiconductors in a low-temperature process (similar to 150 degrees C). By incorporating WO3 into indium oxide, TFTs that were highly stable under a negative bias stress were reproducibly achieved without high-temperature annealing, and the degradation of the field-effect mobility was not pronounced. This may be due to the efficient suppression of the excess oxygen vacancies in the film by the high dissociation energy of the bond between oxygen and W atoms and to the different charge states of W ions. (C) 2014 AIP Publishing LLC.
AMER INST PHYSICS, 英語, 研究論文（学術雑誌）
DOI：https://doi.org/10.1063/1.4871511
DOI ID：10.1063/1.4871511, ISSN：0003-6951, eISSN：1077-3118, Web of Science ID：WOS:000335145200026 - Stable amorphous In2O3-based thin-film transistors by incorporating SiO2 to suppress oxygen vacancies
Nobuhiko Mitoma; Shinya Aikawa; Xu Gao; Takio Kizu; Maki Shimizu; Meng-Fang Lin; Toshihide Nabatame; Kazuhito Tsukagoshi
APPLIED PHYSICS LETTERS, 巻：104, 号：10, 2014年03月
Incorporating SiO2 into amorphous In2O3-based thin films is found to suppress the formation of unstable oxygen vacancies. The SiO2 incorporated thin film transistors exhibited reliable device characteristics after being annealed at 250 degrees C. Increasing the SiO2 content of the sputtering target decreased the sensitivity of the subthreshold swing and turn-on voltage of the device to the sputtering conditions used to deposit the amorphous oxide, making them more stable against electrical and thermal stresses. The increased activation energy of the charge carriers in the current off region indicated a smaller density of states at the conduction-band tail, supporting stable transistor operations. (C) 2014 AIP Publishing LLC.
AMER INST PHYSICS, 英語, 研究論文（学術雑誌）
DOI：https://doi.org/10.1063/1.4868303
DOI ID：10.1063/1.4868303, ISSN：0003-6951, eISSN：1077-3118, Web of Science ID：WOS:000333082800036 - Influence of Al2O3 gate dielectric on transistor properties for IGZO thin film transistor
Kazunori Kurishima; Toshihide Nabatame; Maki Shimizu; Shinya Aikawa; Kazuhito Tsukagoshi; Akihiko Ohi; Toyohiro Chikyo; Atsushi Ogura
WIDE BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 15, 巻：61, 号：4, 開始ページ：345, 終了ページ：351, 2014年
In this paper we investigated transistor properties of indium-gallium-zinc oxide (IGZO) thin film transistors (TFT) with Al2O3/SiO2 dielectric. The saturation field-effect mobility (mu(sat)) of TFTs with Al2O3 decreased about 10 % irrespective of the Al2O3 thickness. Furthermore, the threshold voltage (V-th) value of TFT with Al2O3 shifts toward positive direction about 0.5 V. We found that the SiO2/Al2O3 stack structure contains fixed charge of about - 1.1 x 10(11) /cm(2) and dipole moment of about 0.4 V at Al2O3/SiO2 interface, and negligible fixed charge in Al2O3 layer. These indicate that the origin of the mu(sat) degradation and positive Vth shift are dominantly due to the fixed charge at IGZO/Al2O3 interface and dipole moment at Al2O3/SiO2 interface, respectively.
ELECTROCHEMICAL SOC INC, 英語, 研究論文（国際会議プロシーディングス）
DOI：https://doi.org/10.1149/06104.0345ecst
DOI ID：10.1149/06104.0345ecst, ISSN：1938-5862, eISSN：1938-6737, Web of Science ID：WOS:000338846600043 - Fabrication of Homogeneous Thin Films of Semiconductor-Enriched Single-Wall Carbon Nanotubes for Uniform-Quality Transistors by Using Immersion Coating
Maki Shimizu; Shunjiro Fujii; Satoshi Asano; Takeshi Tanaka; Hiromichi Kataura
APPLIED PHYSICS EXPRESS, 巻：6, 号：10, 2013年10月
Morphology-controlled deposition and macroscopic uniformity of films are critical for practical use of single-wall carbon nanotube transistors. In this study, we used immersion coating to prepare uniform thin films and demonstrated the morphology-controlled deposition by changing the concentrations of the surfactant and nanotubes. The correlation between the thin-film morphology and the transfer characteristics of the transistors fabricated on the film are discussed. Fifteen transistors fabricated on the optimized thin film showed similar transfer characteristics, with a low coefficient of variation of the on-current, while maintaining a high on/off ratio, high on-current, and high mobility. (C) 2013 The Japan Society of Applied Physics
IOP PUBLISHING LTD, 英語, 研究論文（学術雑誌）
DOI：https://doi.org/10.7567/APEX.6.105103
DOI ID：10.7567/APEX.6.105103, ISSN：1882-0778, eISSN：1882-0786, Web of Science ID：WOS:000325704800033 - Effects of Surfactants on the Electronic Transport Properties of Thin-Film Transistors of Single-Wall Carbon Nanotubes
Maki Shimizu; Shunjiro Fujii; Takeshi Tanaka; Hiromichi Kataura
JOURNAL OF PHYSICAL CHEMISTRY C, 巻：117, 号：22, 開始ページ：11744, 終了ページ：11749, 2013年06月
We investigated the effects of surfactants on the morphologies and electronic transport properties of solution-processed thin films of semiconductor-enriched single-wall carbon nanotubes. The network morphologies were observed using atomic force microscopy, and the electronic transport properties of thin-film transistors composed of these materials were examined. The network morphologies were highly dependent on the surfactants, although the thin films were fabricated from the same nanotube using the same process. Among the four surfactants examined in this work, sodium deoxycholate produced the finest mesh structures that comprised mostly individual nanotubes. The performance of the thin-film transistor was highly correlated with the morphology of the nanotube network; however, no considerable effect of the residual surfactant was observed. Because of the fine mesh structure, both the highest on/off ratio (1 x 10(6)) and the highest mobility (42 cm(2) V-1 s(-1)) were obtained for the thin-film transistor produced from sodium deoxycholate.
AMER CHEMICAL SOC, 英語, 研究論文（学術雑誌）
DOI：https://doi.org/10.1021/jp3113254
DOI ID：10.1021/jp3113254, ISSN：1932-7447, eISSN：1932-7455, Web of Science ID：WOS:000320214800035 - Electronic Transport of Single-Wall Carbon Nanotubes with Superconducting Contacts
Maki Shimizu; Hikota Akimoto; Koji Ishibashi
JAPANESE JOURNAL OF APPLIED PHYSICS, 巻：50, 号：3, 2011年03月
The electrical transport properties of an individual single-wall carbon nanotube (SWCNT) with superconducting contacts have been studied below 1 K. Depending on the contact resistance between the SWCNT and the metallic contact, the samples were categorized in two different regimes in this study. In the strong coupling regime with ignored Coulomb blockade effect, the zero-voltage conductance enhancement due to the superconducting proximity effect was observed as well as the multi-Andreev reflection (MAR) processes. In the weaker coupling regime, a signature of the Kondo effect was observed when the contact metals were in the normal state. When they were in the superconducting state, the MAR processes were observed, which appeared to be related to the Kondo effect. (C) 2011 The Japan Society of Applied Physics
JAPAN SOC APPLIED PHYSICS, 英語, 研究論文（学術雑誌）
DOI：https://doi.org/10.1143/JJAP.50.035102
DOI ID：10.1143/JJAP.50.035102, ISSN：0021-4922, Web of Science ID：WOS:000288649800059 - Fabrication of quantum-dot devices in graphene
Satoshi Moriyama; Yoshifumi Morita; Eiichiro Watanabe; Daiju Tsuya; Shinya Uji; Maki Shimizu; Koji Ishibashi
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 巻：11, 号：5, 2010年10月
We describe our recent experimental results on the fabrication of quantum-dot devices in a graphene-based two-dimensional system. Graphene samples were prepared by micromechanical cleavage of graphite crystals on a SiO2/Si substrate. We performed micro-Raman spectroscopy measurements to determine the number of layers of graphene flakes during the device fabrication process. By applying a nanofabrication process to the identified graphene flakes, we prepared a double-quantum-dot device structure comprising two lateral quantum dots coupled in series. Measurements of low-temperature electrical transport show the device to be a series-coupled double-dot system with varied interdot tunnel coupling, the strength of which changes continuously and non-monotonically as a function of gate voltage.
NATL INST MATERIALS SCIENCE, 英語, 研究論文（学術雑誌）
DOI：https://doi.org/10.1088/1468-6996/11/5/054601
DOI ID：10.1088/1468-6996/11/5/054601, ISSN：1468-6996, Web of Science ID：WOS:000287648900009 - Fabrication of single electron transistors using transfer-printed aligned single walled carbon nanotubes arrays
Hiroshi Tabata; Maki Shimizu; Koji Ishibashi
APPLIED PHYSICS LETTERS, 巻：95, 号：11, 2009年09月
A technique has been developed to transfer the aligned single-walled carbon nanotubes (SWCNTs) grown on a single-crystal quarz substrate to a SiO(2)/Si substrate. Aligned single electron transistors (SETs) have been fabricated with the transferred SWCNTs, and the low-temperature transport measurements have been carried out at 1.5 K. Several SETs fabricated in this approach exhibited regular Coulomb oscillations and closed Coulomb diamonds, which indicate the single quantum dot behavior. This suggests that the mechanical transfer technique does not produce serious damage to the SETs and would be useful for future integrated SET devices and circuits. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3227835]
AMER INST PHYSICS, 英語, 研究論文（学術雑誌）
DOI：https://doi.org/10.1063/1.3227835
DOI ID：10.1063/1.3227835, ISSN：0003-6951, Web of Science ID：WOS:000270096900066 - Coupled Quantum Dots in a Graphene-Based Two-Dimensional Semimetal
Satoshi Moriyama; Daiju Tsuya; Eilchiro Watanabe; Shinya Uji; Maki Shimizu; Takahiro Mori; Tomohiro Yamaguchi; Koji Ishibashi
NANO LETTERS, 巻：9, 号：8, 開始ページ：2891, 終了ページ：2896, 2009年08月
We present an experimental demonstration of a graphene-based double quantum dot system, which exhibits single-electron transport of two lateral quantum dots coupled in series. Low-temperature transport measurements revealed honeycomb charge stability diagrams with a varied (from weak to strong) interdot tunnel-coupling regime, and we have extracted the relevant parameters associated with the double quantum dot system. These results are important for the realization of integrated quantum circuits in graphene-based electronics.
AMER CHEMICAL SOC, 英語, 研究論文（学術雑誌）
DOI：https://doi.org/10.1021/nl9011535
DOI ID：10.1021/nl9011535, ISSN：1530-6984, eISSN：1530-6992, Web of Science ID：WOS:000268797200016 - Classical Coulomb blockade of a silicon nanowire dot
Shaoyun Huang; Naoki Fukata; Maki Shimizu; Tomohiro Yamaguchi; Takashi Sekiguchi; Koji Ishibashi
APPLIED PHYSICS LETTERS, 巻：92, 号：21, 2008年05月
Single electron transistors (SETs) have been fabricated with an individual n-type single-crystal silicon nanowire (SiNW) that was grown by a catalytic chemical vapor deposition technique, and their transport properties have been measured in low temperatures. The SiNW-SET in the present work exhibited well pronounced Coulomb oscillations in a wide gate voltage range from -10 to 10 V, featuring in uniform peak height, uniform full width at half maximum, and equidistant peak spacing. The charging energy turned out to be 64 mu eV. The temperature dependence of Coulomb oscillations revealed that the dot worked within the classical Coulomb blockade model. (c) 2008 American Institute of Physics.
AMER INST PHYSICS, 英語, 研究論文（学術雑誌）
DOI：https://doi.org/10.1063/1.2937406
DOI ID：10.1063/1.2937406, ISSN：0003-6951, eISSN：1077-3118, Web of Science ID：WOS:000256303500066 - Statistical characterization of dispersed single-wall carbon nanotube quantum dots
M. Shimizu; S. Moriyama; M. Suzuki; T. Fuse; Y. Homma; K. Ishibashi
SEVENTH INTERNATIONAL CONFERENCE ON NEW PHENOMENA IN MESOSCOPIC STRUCTURES AND FIFTH INTERNATIONAL CONFERENCE ON SURFACES AND INTERFACES OF MESOSCOPIC DEVICES, 2005, 巻：38, 開始ページ：17, 終了ページ：20, 2006年
Quantum dots have been fabricated in single-wall carbon nanotubes (SWCNTs) simply by depositing metallic contacts on top of them. The fabricated quantum dots show different characteristics from sample to sample, which are even different in samples fabricated in the same chip. In this report, we study the statistical variations of the quantum dots fabricated with our method, and suggest their possible origin.
IOP PUBLISHING LTD, 英語, 研究論文（国際会議プロシーディングス）
DOI：https://doi.org/10.1088/1742-6596/38/1/005
DOI ID：10.1088/1742-6596/38/1/005, ISSN：1742-6588, eISSN：1742-6596, Web of Science ID：WOS:000245589400005
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杉本昂暉; 土方泰斗; 清水麻希
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守護理高; 森峻; 土方泰斗; 相川慎也; 清水麻希
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ISSN：2758-4704, J-Global ID：202202286926570030 - Composite carbon nanotube - nanofiber device
Mark Sadgrove; Maki Shimizu; Yoshikazu Homma
14th Pacific Rim Conference on Lasers and Electro-Optics (CLEO PR 2020), 開始ページ：P4_21, 2020年01月01日
Optica Publishing Group
DOI：https://doi.org/10.1364/cleopr.2020.p4_21
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鶴谷拓磨; 吉田健治; 矢島史彬; 清水麻希; 本間芳和; 平川一彦
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開始ページ：109, 終了ページ：+, 2008年
英語
Web of Science ID：WOS:000279102800056