YAGI Shuhei(Mathematics, Electronics and Informatics Division)

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Research Areas

YAGI　Shuhei
Mathematics, Electronics and Informatics Division Associate Professor
Department of Electrical Engineering,Electronics, and Applied Physics

Home Page:
http://opt.eeap.saitama-u.ac.jp/index.html

Researcher information

■ Degree

Doctor of Engineering, Tokyo Institute of Technology

■ Research Keyword

High Efficiency Solar Cells

Crystal Growth

Semiconductor Engineering

■ Field Of Study

Natural sciences, Semiconductors, optical and atomic physics, Semiconductor engineering

Nanotechnology/Materials, Crystal engineering, Crystal growth

Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electric/electronic material engineering

■ Career

Apr. 2015 - Present, Saitama University, Graduate School of Science and Engineering, Associate Professor

Apr. 2010 - Mar. 2015, Saitama Univeristy, Graduate School of Science and Engineering, Assistant Professor

Apr. 2009 - Mar. 2010, The University of Tokyo, Research Center for Advanced Science and Technology, Project Assistant Professor

Apr. 2008 - Mar. 2009, The University of Tokyo, Research Center for Advanced Science and Technology, Project Research Fellow

May 2007 - Mar. 2008, Tsukuba University, Institute of Applied Physics, Reserch Fellow

Apr. 2007 - Apr. 2007, Tsukuba University, Institute of Applied Physics

Apr. 2006 - Mar. 2007, National Institute for Materials Science, NIMS postdoc research fellow

Apr. 2004 - Mar. 2006, National Institute for Materials Science, Research Fellow

■ Educational Background

Apr. 2001 - Mar. 2004, Tokyo Institute of Technology, Graduate School, Division of Science and Engineering, Department of Physical Electronics

Apr. 1999 - Mar. 2001, Tokyo Insititute of Technology, Graduate School, Division of Science and Engineering, Department of Physical Electronics, Japan

Apr. 1997 - Mar. 1999, The University of Electro-Communications, Faculty of Electro Communications, Department of Electronics, Japan

Apr. 1992 - Mar. 1997, Tokyo National College of Technology, Japan

■ Member History

Apr. 2020 - Present
The Japan Society of Applied Physics, APEX/JJAP Editor, Society

Nov. 2024 - Jun. 2025
JJAP Special Issue (PVSEC-35), Guest Editor of JJAP Special Issue (PVSEC-35), Society

Jun. 2012 - Sep. 2018
Japan Society of Applied Physics, Program Committee Member of Autumn/Spring Meeting, Society

Nov. 2017 - Apr. 2018
JJAP special issue (PVSEC-27), JJAP special issue guest editor (PVSEC-27), Society

Jun. 2017 - Nov. 2017
27th International Photovoltaic Science and Engineering Conference (PVSEC-27), Program Committee Member, Society

Nov. 2014 - Apr. 2015
JJAP special issue (WCPEC-6), JJAP special issue guest editor (WCPEC-6), Society

Jun. 2014 - Nov. 2014
6th The World Conference on Photovoltaic Energy Conversion (WCPEC-6), Program Committee Member, Society

Dec. 2010 - Oct. 2011
3rd Seminar on Thin Film Solar Cells, Local Executive Committee, Society

■ Award

Mar. 2025, APEX/JJAP Editorial Contribution Award, The Japan Society of Applied Physics
Shuhei Yagi

Performance information

■ Paper

Structural Properties of Ion-Implanted GaP:N: Effects of Nitrogen Incorporation and Post-Implantation Annealing　　　　　　　　　　　　　　　
Md. Mamun-Or-Rashid; Shuhei Yagi; Hiroyuki Yaguchi
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Volume：263, Number：4, Apr. 2026, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1002/pssb.70219
DOI ID：10.1002/pssb.70219, ISSN：0370-1972, eISSN：1521-3951, Web of Science ID：WOS:001752515700007

Study on real-time photoluminescence intensity change of In_yGa_1-yAs_1-xN_x alloys by CW-laser irradiation　　　　　　　　　　　　　　　
Zamil Sultan; Shuhei Yagi; Kengo Takamiya; Hiroyuki Yaguchi
AIP ADVANCES, Volume：15, Number：11, Nov. 2025, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1063/5.0268927
DOI ID：10.1063/5.0268927, eISSN：2158-3226, Web of Science ID：WOS:001608457600001

Below gap photon induced photocurrent enhancement in GaPN intermediate band solar cell fabricated by ion implantation　　　　　　　　　　　　　　　
Md Mamun Or Rashid; Kyoko Munakata; Shuhei Yagi; Hiroyuki Yaguchi
Japanese Journal of Applied Physics, Jun. 2025, [Reviewed]
Scientific journal
DOI：https://doi.org/10.35848/1347-4065/add352
DOI ID：10.35848/1347-4065/add352, ORCID：183351753

Effects of Carrier Supply to the Intermediate Band by Impurity Doping on Two-Step Photocurrent Generation in GaAs:N-Based Intermediate Band Solar Cell　　　　　　　　　　　　　　　
Md Faruk Hossain; Shuhei Yagi; Hiroyuki Yaguchi
North American Academic Research, Volume：8, Number：2, First page：112, Last page：128, Feb. 2025, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.5281/zenodo.14910609
DOI ID：10.5281/zenodo.14910609

Analysis of two-step photocurrent generation in GaAs:N-based intermediate band solar cells with utilization of device simulation
Md Faruk Hossain; Shuhei Yagi; Hiroyuki Yaguchi
AIP Advances, Volume：15, Number：2, First page：025212, Feb. 2025, [Reviewed]
We developed a novel approach to analyze the two-step photocurrent generation process in intermediate band solar cells (IBSCs) by means of numerical device simulation combined with rate equation analysis. An IBSC having a GaAs:N intermediate band (IB) absorber with the same layered structure as experimentally investigated in our previous work is modeled, and its characteristic behavior of external quantum efficiency (EQE) is successfully simulated with the utilization of Silvaco-Atlas software. The simulated results gave new insights into the material parameters of the device, such as trap states and interface recombination velocity, and revealed that an electron-blocking layer adjacent to the IB absorber plays a significant role in confining the electrons in the IB state, which is the main prerequisite for efficient two-step photocurrent generation. Change in EQE (ΔEQE) induced by additional light illumination of which energy is below the valence band–IB gap is analyzed as an evaluation metric of two-step photocurrent generation based on a rate equation analysis. The integrated electron concentration in the GaAs:N absorber layer is calculated from the simulation results and is used as an input parameter for the rate equation analysis. As a result, the bias voltage-dependent ΔEQE of experimentally investigated IBSC is well reproduced, indicating that the proposed method can be a useful approach for a better understanding of IBSC operation physics and designing more efficient devices.
AIP Publishing, English, Scientific journal
DOI：https://doi.org/10.1063/5.0247676
DOI ID：10.1063/5.0247676, eISSN：2158-3226, ORCID：177570673, 共同研究・競争的資金等ID：40969023

Nitrogen Concentration Dependence of Two‐Step Photocurrent Generation by Below‐Gap Excitation in GaPN Alloys
Abdul Qayoom; Shuhei Yagi; Hiroyuki Yaguchi
physica status solidi (b), Volume：261, Number：4, Feb. 2024, [Reviewed]
Two‐step photocurrent generation and its dependence on nitrogen concentration in GaPN alloys using two‐wavelength excited photocurrent (TWEPC) measurements are investigated. External quantum efficiency (EQE) measurements show an increase in the two‐step absorption of below‐gap excitation light through tail states at longer wavelengths and that the quasi‐direct gap redshifts as the nitrogen concentration increases. The improvement in the EQE at longer wavelengths is explained by the increased density of the tail states in GaPN with higher nitrogen concentrations. In contrast, the EQE decreases at shorter wavelengths with increasing nitrogen content. TWEPC results show that differential photocurrent density , which shows the synergy effect of multiple‐wavelength light, reduces with the addition of nitrogen. It is found from rate–equation analysis that the decrease in the EQE at shorter wavelengths and in is mainly due to the increased nonradiative recombination in GaPN with higher nitrogen concentration. The use of lattice‐matched alloys and a p‐type GaP capping layer as well as the optimization of the growth conditions can improve the EQE at shorter wavelengths and .
Wiley, Scientific journal
DOI：https://doi.org/10.1002/pssb.202300369
DOI ID：10.1002/pssb.202300369, ISSN：0370-1972, eISSN：1521-3951

Two-Step Photocurrent Generation through Band Tail States in GaPN-Based Intermediate Band Solar Cells　　　　　　　　　　　　　　　
Abdul Qayoom; Shuhei Yagi; Hiroyuki Yaguchi
North American Academic Research, Volume：6, Number：8, First page：20, Last page：31, Aug. 2023, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.5281/znodo.8300177
DOI ID：10.5281/znodo.8300177

Photocurrent enhancement by below bandgap excitation in GaPN
Abdul Qayoom; Sanjida Ferdous; Shuhei Yagi; Hiroyuki Yaguchi
Japanese Journal of Applied Physics, Volume：62, Number：SK, First page：SK1038, Last page：SK1038, May 2023, [Reviewed]
Abstract

This study presents two-wavelength excited photocurrent (TWEPC) measurements in GaP_1−xN_x grown by metalorganic vapor phase epitaxy. TWEPC measurements reveal that photocurrent generation is significantly enhanced when above gap excitation and below gap excitation (BGE) sources are applied simultaneously. With increasing BGE photon energy, a large increase in photocurrent is observed. The external quantum efficiency measurements show that the effect of BGE light is higher with a higher density of tail states present. The extended numerical study by rate equations reproduced the results in a good manner. Furthermore, the simulation results showed that the addition of the BGE light affects the electron occupancy as well as the electron lifetime, which is found to be 0.1 ns in this study.
IOP Publishing, Scientific journal
DOI：https://doi.org/10.35848/1347-4065/acd00c
DOI ID：10.35848/1347-4065/acd00c, ISSN：0021-4922, eISSN：1347-4065

Effects of carrier-blocking barrier height on two-step photocurrent generation in dilute nitride intermediate band solar cells
Shuhei Yagi; Shun Numata; Yasushi Shoji; Yoshitaka Okada; Hiroyuki Yaguchi
Japanese Journal of Applied Physics, Volume：62, Number：SK, First page：SK1008, Last page：SK1008, Mar. 2023, [Reviewed], [Lead, Corresponding]
Abstract

GaAs:N dilute nitride intermediate band solar cells (IBSCs) with different barrier heights for blocking electron transport from the intermediate band (IB) were prepared and the role of such an electron blocking layer (EBL) was investigated. It is found that the EBL effectively confines electrons in the IB states, and the two-step photocurrent generation process is strongly affected by its barrier height. A rate equation analysis well reproduced experimental observations of the applied voltage dependence of the two-step photocurrent generation process. It revealed that the electron extraction both from the conduction band and the IB through the EBL is governed by the thermionic emission process. To meet the requirements of an ideal IBSC, optimized device structures including the barrier height of the EBL have to be designed properly taking into account the material parameters and carrier dynamics under the actual operating condition.
IOP Publishing, English, Scientific journal
DOI：https://doi.org/10.35848/1347-4065/acbf5e
DOI ID：10.35848/1347-4065/acbf5e, ISSN：0021-4922, eISSN：1347-4065, 共同研究・競争的資金等ID：40969023

Activation of two dopants, Bi and Er in δ -doped layer in Si crystal　　　　　　　　　　　　　　　
Koichi Murata; Shuhei Yagi; Takashi Kanazawa; Satoshi Tsubomatsu; Christopher Kirkham; Koh-ichi Nittoh; David R Bowler; Kazushi Miki
Nano Futures, Volume：5, Number：4, First page：045005, Last page：045005, Dec. 2021, [Reviewed]
Scientific journal
DOI：https://doi.org/10.1088/2399-1984/ac421d
DOI ID：10.1088/2399-1984/ac421d, ISSN：2399-1984, eISSN：2399-1984, ORCID：215061317, SCOPUS ID：85140874876, Web of Science ID：WOS:000738244700001

Detection of Nonradiative Recombination Centers in GaPN by Combining Two-Wavelength Excited Photoluminescence and Time-Resolved Photoluminescence　　　　　　　　　　　　　　　
Sanjida Ferdous; Hiroki Iwai; Norihiko Kamata; Hiroyuki Yaguchi; Shuhei Yagi
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Volume：258, Number：11, Nov. 2021, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1002/pssb.202100119
DOI ID：10.1002/pssb.202100119, ISSN：0370-1972, eISSN：1521-3951, Web of Science ID：WOS:000692804600001

Influence of Laser Irradiation on the Photoluminescence Intensity of InGaAsN Quantum Wells　　　　　　　　　　　　　　　
Md. Zamil Sultan; Shuhei Yagi; Kengo Takamiya; Hiroyuki Yaguchi; Osamu Ueda
North American Academic Research, Volume：4, Number：2, First page：240, Last page：251, Feb. 2021, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.5281/zenodo.4564429
DOI ID：10.5281/zenodo.4564429

Photoluminescence intensity change of GaP1-xNx alloys by laser irradiation　　　　　　　　　　　　　　　
Md. Zamil Sultan; Akinori Shiroma; Shuhei Yagi; Kengo Takamiya; Hiroyuki Yaguchi
AIP ADVANCES, Volume：10, Number：9, Sep. 2020, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1063/5.0020793
DOI ID：10.1063/5.0020793, eISSN：2158-3226, Web of Science ID：WOS:000567593300001

Spectral Change of E − Band Emission in a GaAs:N δ-Doped Superlattice Due to Below-Gap Excitation and Its Discrimination from Thermal Activation　　　　　　　　　　　　　　　
Md Dulal Haque; Norihiko Kamata; A. Z.M.Touhidul Islam; Shuhei Yagi; Hiroyuki Yaguchi
Journal of Electronic Materials, Volume：49, Number：2, First page：1550, Last page：1556, Feb. 2020, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1007/s11664-019-07856-6
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85075954109&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85075954109&origin=inward
DOI ID：10.1007/s11664-019-07856-6, ISSN：0361-5235, eISSN：1543-186X, SCOPUS ID：85075954109, Web of Science ID：WOS:000500279100002

Photoluminescence characterization of nonradiative recombination centers in MOVPE grown GaAs:N δ-doped superlattice structure　　　　　　　　　　　　　　　
MD. Dulal Haque, Norihiko Kamata, A.Z.M. Touhidul Islam, Zentaro Honda, Shuhei Yagi, Hiroyuki Yaguchi
OPTICAL MATERIALS, Volume：89, First page：521, Last page：527, Feb. 2019, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1016/J.OPTMAT.2019.01.047
DOI ID：10.1016/J.OPTMAT.2019.01.047, ISSN：0925-3467, ORCID：215061325, SCOPUS ID：85061552945, Web of Science ID：WOS:000465509800074

Detection of Nonradiative Recombination Centers in GaPN (N:0.105%) by Below-Gap Excitation Light　　　　　　　　　　　　　　　
Sanjida Ferdous; Norihiko Kamata; Shuhei Yagi; Hiroyuki Yaguchi
Physica Status Solidi (B) Basic Research, 2019, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1002/pssb.201900377
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85074068004&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85074068004&origin=inward
DOI ID：10.1002/pssb.201900377, ISSN：0370-1972, eISSN：1521-3951, SCOPUS ID：85074068004, Web of Science ID：WOS:000489972400001

Growth temperature dependence of cubic GaN step structures and cubic InN dot arrays grown on MgO (001) vicinal substrates　　　　　　　　　　　　　　　
Kazumasa Okura; Kengo Takamiya; Shuhei Yagi; Hiroyuki Yaguchi
Japanese Journal of Applied Physics, Volume：58, Number：SC, 2019, [Reviewed], [Corresponding]
English, Scientific journal
DOI：https://doi.org/10.7567/1347-4065/ab106a
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85070734869&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85070734869&origin=inward
DOI ID：10.7567/1347-4065/ab106a, ISSN：0021-4922, eISSN：1347-4065, SCOPUS ID：85070734869, Web of Science ID：WOS:000474911400059

Effects of solvent vapor annealing on organic photovoltaics with a new type of solution-processable oligothiophene-based electronic donor material　　　　　　　　　　　　　　　
Akiyama, Yuki; Tachibana, Hiroaki; Azumi, Reiko; Miyadera, Tetsuhiko; Chikamatsu, Masayuki; Koganezawa, Tomoyuki; Yagi, Shuhei; Yaguchi, Hiroyuki
JAPANESE JOURNAL OF APPLIED PHYSICS, Volume：57, Number：8, Aug. 2018, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.7567/JJAP.57.08RE09
DOI ID：10.7567/JJAP.57.08RE09, ISSN：0021-4922, eISSN：1347-4065, Web of Science ID：WOS:000443891800067

Biexciton Emission From Single Quantum-Confined Structures in N-Polar (000-1) InGaN/GaN Multiple Quantum Wells　　　　　　　　　　　　　　　
Kengo Takamiya; Shuhei Yagi; Hiroyuki Yaguchi; Hidefumi Akiyama; Kanako Shojiki; Tomoyuki Tanikawa; Ryuji Katayama
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Volume：255, Number：5, May 2018, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1002/pssb.201700454
DOI ID：10.1002/pssb.201700454, ISSN：0370-1972, eISSN：1521-3951, Web of Science ID：WOS:000432028400019

Nonradiative recombination centers in GaAs:N delta-doped superlattice revealed by two-wavelength-excited photoluminescence　　　　　　　　　　　　　　　
Haque, Md. Dulal; Kamata, Norihiko; Fukuda, Takeshi; Honda, Zentaro; Yagi, Shuhei; Yaguchi, Hiroyuki; Okada, Yoshitaka
JOURNAL OF APPLIED PHYSICS, Volume：123, Number：16, Apr. 2018, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1063/1.5011311
DOI ID：10.1063/1.5011311, ISSN：0021-8979, eISSN：1089-7550, Web of Science ID：WOS:000431147200029

Growth of InN/GaN dots on 4H-SiC(0001) 4° off vicinal substrates by molecular beam epitaxy　　　　　　　　　　　　　　　
Keisuke Matsuoka; Shuhei Yagi; Hiroyuki Yaguchi
Journal of Crystal Growth, Volume：477, First page：201, Last page：206, Nov. 2017, [Reviewed]
Scientific journal
DOI：https://doi.org/10.1016/j.jcrysgro.2017.05.021
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85020105871&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85020105871&origin=inward
DOI ID：10.1016/j.jcrysgro.2017.05.021, ISSN：0022-0248, SCOPUS ID：85020105871, Web of Science ID：WOS:000413646100043

Spectral change of intermediate band luminescence in GaP:N due to below-gap excitation: Discrimination from thermal activation　　　　　　　　　　　　　　　
N. Kamata; M. Suetsugu; D. Haque; S. Yagi; H. Yaguchi; F. Karlsson; P. O. Holtz
Physica Status Solidi (B) Basic Research, Volume：254, Number：2, Feb. 2017, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1002/pssb.201600566
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85003749566&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85003749566&origin=inward
DOI ID：10.1002/pssb.201600566, ISSN：0370-1972, eISSN：1521-3951, SCOPUS ID：85003749566, Web of Science ID：WOS:000394614300035

Self-organized growth of cubic InN dot arrays on cubic GaN using MgO (001) vicinal substrates　　　　　　　　　　　　　　　
Kenichi Ishii; Shuhei Yagi; Hiroyuki Yaguchi
Physica Status Solidi (B) Basic Research, Volume：254, Number：2, Feb. 2017, [Reviewed], [Corresponding]
Scientific journal
DOI：https://doi.org/10.1002/pssb.201600542
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85000938311&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85000938311&origin=inward
DOI ID：10.1002/pssb.201600542, ISSN：0370-1972, eISSN：1521-3951, SCOPUS ID：85000938311, Web of Science ID：WOS:000394614300028

Photoluminescence characterization of carrier recombination centers in 4H-SiC substrates by utilizing below gap excitation　　　　　　　　　　　　　　　
K. Kondo; N. Kamata; H. Yaguchi; S. Yagi; T. Fukuda; Z. Honda
Materials Science Forum, Volume：897 MSF, First page：315, Last page：318, 2017, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.4028/www.scientific.net/MSF.897.315
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85020048562&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85020048562&origin=inward
DOI ID：10.4028/www.scientific.net/MSF.897.315, ISSN：0255-5476, eISSN：1662-9752, SCOPUS ID：85020048562

Photoluminescence study of oxidation-induced faults in 4H-SiC epilayers　　　　　　　　　　　　　　　
Yutaro Miyano; Ryosuke Asafuji; Shuhei Yagi; Yasuto Hijikata; Hiroyuki Yaguchi
AIP Advances, Volume：5, Number：12, Dec. 2015, [Reviewed]
Scientific journal
DOI：https://doi.org/10.1063/1.4938126
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84952672264&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84952672264&origin=inward
DOI ID：10.1063/1.4938126, ISSN：2158-3226, eISSN：2158-3226, SCOPUS ID：84952672264, Web of Science ID：WOS:000367596300016

Molecular beam epitaxial growth of intermediate-band materials based on GaAs:N δ-doped superlattices　　　　　　　　　　　　　　　
Tomoya Suzuki; Kazuki Osada; Shuhei Yagi; Shunya Naitoh; Yasushi Shoji; Yasuto Hijikata; Yoshitaka Okada; Hiroyuki Yaguchi
Japanese Journal of Applied Physics, Volume：54, Number：8, Aug. 2015, [Reviewed], [Corresponding]
English, Scientific journal
DOI：https://doi.org/10.7567/JJAP.54.08KA07
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84938504709&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84938504709&origin=inward
DOI ID：10.7567/JJAP.54.08KA07, ISSN：0021-4922, eISSN：1347-4065, SCOPUS ID：84938504709, Web of Science ID：WOS:000358662900008

Control of intermediate-band configuration in GaAs:N δ-doped superlattice　　　　　　　　　　　　　　　
Kazuki Osada; Tomoya Suzuki; Shuhei Yagi; Shunya Naitoh; Yasushi Shoji; Yasuto Hijikata; Yoshitaka Okada; Hiroyuki Yaguchi
Japanese Journal of Applied Physics, Volume：54, Number：8S1, First page：08KA04, Last page：08KA04, Jul. 2015, [Reviewed], [Corresponding]
Scientific journal
DOI：https://doi.org/10.7567/jjap.54.08ka04
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84938516127&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84938516127&origin=inward
DOI ID：10.7567/jjap.54.08ka04, ISSN：0021-4922, eISSN：1347-4065, J-Global ID：201502202887386651, SCOPUS ID：84938516127, Web of Science ID：WOS:000358662900005

Differences in SiC thermal oxidation process between crystalline surface orientations observed by in-situ spectroscopic ellipsometry　　　　　　　　　　　　　　　
Daisuke Goto; Yasuto Hijikata; Shuhei Yagi; Hiroyuki Yaguchi
Journal of Applied Physics, Volume：117, Number：9, Mar. 2015, [Reviewed]
Scientific journal
DOI：https://doi.org/10.1063/1.4914050
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84924310120&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84924310120&origin=inward
DOI ID：10.1063/1.4914050, ISSN：0021-8979, eISSN：1089-7550, SCOPUS ID：84924310120, Web of Science ID：WOS:000351134400041

Photoluminescence study of oxidation-induced stacking faults in 4H-SiC epilayers　　　　　　　　　　　　　　　
Yutaro Miyano; Shuhei Yagi; Yasuto Hijikata; Hiroyuki Yaguchi
Materials Science Forum, Volume：821-823, First page：327, Last page：330, 2015, [Reviewed]
Scientific journal
DOI：https://doi.org/10.4028/www.scientific.net/MSF.821-823.327
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84950321920&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84950321920&origin=inward
DOI ID：10.4028/www.scientific.net/MSF.821-823.327, ISSN：0255-5476, SCOPUS ID：84950321920

Surface orientation dependence of SiC oxidation process studied by in-situ spectroscopic ellipsometry　　　　　　　　　　　　　　　
Daisuke Goto; Shuhei Yagi; Yasuto Hijikata; Hiroyuki Yaguchi
Materials Science Forum, Volume：821-823, First page：371, Last page：374, 2015, [Reviewed]
International conference proceedings
DOI：https://doi.org/10.4028/www.scientific.net/MSF.821-823.371
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Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84950341587&origin=inward
DOI ID：10.4028/www.scientific.net/MSF.821-823.371, ISSN：0255-5476, SCOPUS ID：84950341587

Growth temperature dependence of the surface segregation of Er atoms in GaAs during molecular beam epitaxy　　　　　　　　　　　　　　　
Ri Guo Jin; Shuhei Yagi; Yasuto Hijikata; Hiroyuki Yaguchi
Japanese Journal of Applied Physics, Volume：54, Number：5, 2015, [Reviewed]
Scientific journal
DOI：https://doi.org/10.7567/JJAP.54.051201
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84983072013&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84983072013&origin=inward
DOI ID：10.7567/JJAP.54.051201, ISSN：0021-4922, eISSN：1347-4065, SCOPUS ID：84983072013, Web of Science ID：WOS:000354980300009

Enhanced optical absorption due to E+-related band transition in GaAs:N δ-doped superlattices　　　　　　　　　　　　　　　
Shuhei Yagi; Shunsuke Noguchi; Yasuto Hijikata; Shigeyuki Kuboya; Kentaro Onabe; Yoshitaka Okada; Hiroyuki Yaguchi
Applied Physics Express, Volume：7, Number：10, Oct. 2014, [Reviewed], [Lead, Corresponding]
English, Scientific journal
DOI：https://doi.org/10.7567/APEX.7.102301
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84988891884&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84988891884&origin=inward
DOI ID：10.7567/APEX.7.102301, ISSN：1882-0778, eISSN：1882-0786, SCOPUS ID：84988891884, Web of Science ID：WOS:000344439300007

Photoreflectance study of the temperature dependence of excitonic transitions in dilute GaAsN alloys　　　　　　　　　　　　　　　
Wataru Okubo; Shuhei Yagi; Yasuto Hijikata; Kentaro Onabe; Hiroyuki Yaguchi
physica status solidi (a), Volume：211, Number：4, First page：752, Last page：755, Mar. 2014, [Reviewed]
Scientific journal
DOI：https://doi.org/10.1002/pssa.201300462
DOI ID：10.1002/pssa.201300462, ISSN：1862-6300, eISSN：1862-6319, ORCID：215061346, SCOPUS ID：84897986009, Web of Science ID：WOS:000333911800006

Si emission into the oxide layer during oxidation of silicon carbide　　　　　　　　　　　　　　　
Yasuto Hijikata; Yurie Akasaka; Shuhei Yagi; Hiroyuki Yaguchi
Materials Science Forum, Volume：778-780, First page：553, Last page：556, 2014, [Reviewed]
Scientific journal
DOI：https://doi.org/10.4028/www.scientific.net/MSF.778-780.553
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84896066589&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84896066589&origin=inward
DOI ID：10.4028/www.scientific.net/MSF.778-780.553, ISSN：0255-5476, eISSN：1662-9752, SCOPUS ID：84896066589, Web of Science ID：WOS:000336634100130

Stacked structure of self-organized cubic InN nano-dots grown by molecular beam epitaxy　　　　　　　　　　　　　　　
Shuhei Yagi; Junichiro Suzuki; Misao Orihara; Yasuto Hijikata; Hiroyuki Yaguchi
Physica Status Solidi (C) Current Topics in Solid State Physics, Volume：10, Number：11, First page：1545, Last page：1548, Nov. 2013, [Reviewed], [Lead, Corresponding]
English, Scientific journal
DOI：https://doi.org/10.1002/pssc.201300275
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84887619549&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84887619549&origin=inward
DOI ID：10.1002/pssc.201300275, ISSN：1862-6351, eISSN：1610-1642, SCOPUS ID：84887619549, Web of Science ID：WOS:000334583400049

Conversion efficiency of intermediate band solar cells with GaAs:N δ-doped superlattices　　　　　　　　　　　　　　　
Shuhei Yagi; Shunsuke Noguchi; Yasuto Hijikata; Shigeyuki Kuboya; Kentaro Onabe; Hiroyuki Yaguchi
Japanese Journal of Applied Physics, Volume：52, Number：10 PART1, Oct. 2013, [Reviewed], [Lead, Corresponding]
English, Scientific journal
DOI：https://doi.org/10.7567/JJAP.52.102302
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84887232116&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84887232116&origin=inward
DOI ID：10.7567/JJAP.52.102302, ISSN：0021-4922, eISSN：1347-4065, SCOPUS ID：84887232116, Web of Science ID：WOS:000325209000024

Direct evidence of carrier excitation from intermediate band states in GaPN by two-wavelength excited photoluminescence　　　　　　　　　　　　　　　
Abu Zafor Muhammad Touhidul Islam; Tsukasa Hanaoka; Kentaro Onabe; Shuhei Yagi; Norihiko Kamata; Hiroyuki Yaguchi
Applied Physics Express, Volume：6, Number：9, Sep. 2013, [Reviewed]
Scientific journal
DOI：https://doi.org/10.7567/APEX.6.092401
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84883664354&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84883664354&origin=inward
DOI ID：10.7567/APEX.6.092401, ISSN：1882-0778, eISSN：1882-0786, SCOPUS ID：84883664354, Web of Science ID：WOS:000324494100020

Model calculations of SiC oxide growth rates at sub-atmospheric pressures using the Si and c emission model　　　　　　　　　　　　　　　
Yasuto Hijikata; Shuhei Yagi; Hiroyuki Yaguchi; Sadafumi Yoshida
Materials Science Forum, Volume：740-742, First page：833, Last page：836, 2013, [Reviewed]
Scientific journal
DOI：https://doi.org/10.4028/www.scientific.net/MSF.740-742.833
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84874076989&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84874076989&origin=inward
DOI ID：10.4028/www.scientific.net/MSF.740-742.833, ISSN：0255-5476, eISSN：1662-9752, SCOPUS ID：84874076989, Web of Science ID：WOS:000319785500198

Molecular beam epitaxy of ErGaAs alloys on GaAs (0 0 1) substrates　　　　　　　　　　　　　　　
Ri Guo Jin; Shuhei Yagi; Yasuto Hijikata; Shigeyuki Kuboya; Kentaro Onabe; Ryuji Katayama; Hiroyuki Yaguchi
Journal of Crystal Growth, Volume：378, First page：85, Last page：87, 2013, [Reviewed]
Scientific journal
DOI：https://doi.org/10.1016/j.jcrysgro.2012.12.043
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84885427998&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84885427998&origin=inward
DOI ID：10.1016/j.jcrysgro.2012.12.043, ISSN：0022-0248, SCOPUS ID：84885427998, Web of Science ID：WOS:000323355900023

RF-MBE growth of cubic InN nano-scale dots on cubic GaN　　　　　　　　　　　　　　　
Junichiro Suzuki; Misao Orihara; Shuhei Yagi; Yasuto Hijikata; Hiroyuki Yaguchi
Journal of Crystal Growth, Volume：378, First page：454, Last page：458, 2013, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1016/j.jcrysgro.2012.12.050
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84885434999&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84885434999&origin=inward
DOI ID：10.1016/j.jcrysgro.2012.12.050, ISSN：0022-0248, eISSN：1873-5002, SCOPUS ID：84885434999, Web of Science ID：WOS:000323355900113

Analysis of electronic structures of nitrogen δ-doped GaAs superlattices for high efficiency intermediate band solar cells　　　　　　　　　　　　　　　
Shunsuke Noguchi; Shuhei Yagi; Daisuke Sato; Yasuto Hijikata; Kentaro Onabe; Shigeyuki Kuboya; Hiroyuki Yaguchi
IEEE Journal of Photovoltaics, Volume：3, Number：4, First page：1287, Last page：1291, 2013, [Reviewed], [Corresponding]
Scientific journal
DOI：https://doi.org/10.1109/JPHOTOV.2013.2271978
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84884672481&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84884672481&origin=inward
DOI ID：10.1109/JPHOTOV.2013.2271978, ISSN：2156-3381, SCOPUS ID：84884672481, Web of Science ID：WOS:000324881400023

Biexciton emission from single isoelectronic traps formed by nitrogen-nitrogen pairs in GaAs　　　　　　　　　　　　　　　
Kengo Takamiya; Toshiyuki Fukushima; Shuhei Yagi; Yasuto Hijikata; Toshimitsu Mochizuki; Masahiro Yoshita; Hidefumi Akiyama; Shigeyuki Kuboya; Kentaro Onabe; Ryuji Katayama; Hiroyuki Yaguchi
AIP Conference Proceedings, Volume：1566, First page：538, Last page：539, 2013, [Reviewed]
English, International conference proceedings
DOI：https://doi.org/10.1063/1.4848523
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84907305933&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84907305933&origin=inward
DOI ID：10.1063/1.4848523, ISSN：0094-243X, eISSN：1551-7616, SCOPUS ID：84907305933, Web of Science ID：WOS:000331793000268

Biexciton luminescence from individual isoelectronic traps in nitrogen δ-doped GaAs　　　　　　　　　　　　　　　
Kengo Takamiya; Toshiyuki Fukushima; Shuhei Yagi; Yasuto Hijikata; Toshimitsu Mochizuki; Masahiro Yoshita; Hidefumi Akiyama; Shigeyuki Kuboya; Kentaro Onabe; Ryuji Katayama; Hiroyuki Yaguchi
Applied Physics Express, Volume：5, Number：11, Nov. 2012, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1143/APEX.5.111201
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84869186070&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84869186070&origin=inward
DOI ID：10.1143/APEX.5.111201, ISSN：1882-0778, eISSN：1882-0786, SCOPUS ID：84869186070, Web of Science ID：WOS:000310867800003

Oxygen partial pressure dependence of the SiC oxidation process studied by in-situ spectroscopic ellipsometry　　　　　　　　　　　　　　　
Keiko Kouda; Yasuto Hijikata; Shuhei Yagi; Hiroyuki Yaguchi; Sadafumi Yoshida
Journal of Applied Physics, Volume：112, Number：2, Jul. 2012, [Reviewed]
Scientific journal
DOI：https://doi.org/10.1063/1.4736801
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84865484968&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84865484968&origin=inward
DOI ID：10.1063/1.4736801, ISSN：0021-8979, SCOPUS ID：84865484968, Web of Science ID：WOS:000308424500114

Micro-photoluminescence study on the influence of oxidation on stacking faults in 4H-SiC epilayers　　　　　　　　　　　　　　　
Hikaru Yamagata; Shuhei Yagi; Yasuto Hijikata; Hiroyuki Yaguchi
Applied Physics Express, Volume：5, Number：5, May 2012, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1143/APEX.5.051302
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84861398046&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84861398046&origin=inward
DOI ID：10.1143/APEX.5.051302, ISSN：1882-0778, eISSN：1882-0786, SCOPUS ID：84861398046, Web of Science ID：WOS:000303932500005

RF-MBE growth of semipolar InN(10-13) and InGaN(10-13) on GaAs(110)　　　　　　　　　　　　　　　
Misao Orihara; Shuhei Yagi; Yasuto Hijikata; Hiroyuki Yaguchi
Physica Status Solidi (C) Current Topics in Solid State Physics, Volume：9, Number：3-4, First page：658, Last page：661, Mar. 2012, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1002/pssc.201100365
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84858842029&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84858842029&origin=inward
DOI ID：10.1002/pssc.201100365, ISSN：1862-6351, eISSN：1610-1642, SCOPUS ID：84858842029, Web of Science ID：WOS:000306521600059

Single photon generation from nitrogen atomic-layer doped gallium arsenide　　　　　　　　　　　　　　　
Kengo Takamiya; Yuta Endo; Toshiyuki Fukushima; Shuhei Yagi; Yasuto Hijikata; Toshimitsu Mochizuki; Masahiro Yoshita; Hidefumi Akiyama; Shigeyuki Kuboya; Kentaro Onabe; Ryuji Katayama; Hiroyuki Yaguchi
Materials Science Forum, Volume：706-709, First page：2916, Last page：2921, 2012, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.4028/www.scientific.net/MSF.706-709.2916
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84856180201&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84856180201&origin=inward
DOI ID：10.4028/www.scientific.net/MSF.706-709.2916, ISSN：0255-5476, eISSN：1662-9752, SCOPUS ID：84856180201, Web of Science ID：WOS:000308517301220

High-density quantum dot superlattice for application to high-efficiency solar cells　　　　　　　　　　　　　　　
Ryuji Oshima; Yoshitaka Okada; Ayami Takata; Shuhei Yagi; Kouichi Akahane; Ryo Tamaki; Kenjiro Miyano
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2, Volume：8, Number：2, 2011, [Reviewed]
English, International conference proceedings
DOI：https://doi.org/10.1002/pssc.201000461
DOI ID：10.1002/pssc.201000461, ISSN：1862-6351, Web of Science ID：WOS:000301533800123

High-efficiency solar cells based on quantum dot superlattice　　　　　　　　　　　　　　　
OKADA Yoshitaka; YAGI Shuhei; OSHIMA Ryuji
應用物理, Volume：79, Number：3, First page：206, Last page：212, Mar. 2010, [Reviewed]
応用物理学会, Japanese, Scientific journal
ISSN：0369-8009, J-Global ID：201002233272788305, CiNii Articles ID：10026199411, CiNii Books ID：AN00026679

Evaluation of selective energy contact for hot carrier solar cells based on III-V semiconductors　　　　　　　　　　　　　　　
Shuhei Yagi; Ryuji Oshima; Yoshitaka Okada
Conference Record of the IEEE Photovoltaic Specialists Conference, First page：000530, Last page：000533, 2009
English, International conference proceedings
DOI：https://doi.org/10.1109/PVSC.2009.5411629
DOI ID：10.1109/PVSC.2009.5411629, ISSN：0160-8371, SCOPUS ID：77951595758

Global Tuning of Local Molecular Phenomena: An Alternative Approach to Bionanoelectronics　　　　　　　　　　　　　　　
A. Bandyopadhyay; K. Nittoh; Y. Wakayama; S. Yagi; K. Miki
The Journal of Physical Cehmistry B, Volume：110, Number：42, First page：20852, Last page：20857, Sep. 2006, [Reviewed]
English, Scientific journal

Surface bismuth removal after Bi nanoline encapsulation in silicon　　　　　　　　　　　　　　　
Shuhei Yagi; Wataru Yashiro; Kunihiro Sakamoto; Kazushi Miki
Surface Science, Volume：595, Number：1-3, First page：L311, Last page：L317, Dec. 2005, [Reviewed], [Lead]
Scientific journal
DOI：https://doi.org/10.1016/j.susc.2005.08.013
DOI ID：10.1016/j.susc.2005.08.013, ISSN：0039-6028, ORCID：215061321, SCOPUS ID：27644522002, Web of Science ID：WOS:000233315900001

Substitutional C incorporation into Si1-yCy alloys using novel carbon source, 1,3-disilabutane　　　　　　　　　　　　　　　
S Yagi; K Abe; A Yamada; M Konagai
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Volume：43, Number：7A, First page：4153, Last page：4154, Jul. 2004, [Reviewed], [Lead]
English, Scientific journal
DOI：https://doi.org/10.1143/JJAP.43.4153
DOI ID：10.1143/JJAP.43.4153, ISSN：0021-4922, Web of Science ID：WOS:000223001800019

C stability in Si1-yCy epitaxial films grown by low-temperature chemical vapor deposition　　　　　　　　　　　　　　　
S Yagi; K Abe; A Yamada; M Konagai
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Volume：42, Number：4A, First page：1499, Last page：1502, Apr. 2003, [Reviewed], [Lead]
English, Scientific journal
DOI：https://doi.org/10.1143/jjap.42.1499
DOI ID：10.1143/jjap.42.1499, ISSN：0021-4922, CiNii Articles ID：150000041156, Web of Science ID：WOS:000182892300001

Phosphorous doping of strain-induced Si1-yCy epitaxial films grown by low-temperature chemical vapor deposition　　　　　　　　　　　　　　　
S Yagi; K Abe; T Okabayashi; Y Yoneyama; A Yamada; M Konagai
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Volume：41, Number：4B, First page：2472, Last page：2475, Apr. 2002, [Reviewed], [Lead]
English, Scientific journal
DOI：https://doi.org/10.1143/JJAP.41.2472
DOI ID：10.1143/JJAP.41.2472, ISSN：0021-4922, CiNii Articles ID：150000039821, Web of Science ID：WOS:000175703200038

Growth and characterization of phosphorus doped Si1-yCy alloy grown by photo- and plasma-CVD at very low temperature　　　　　　　　　　　　　　　
K Abe; S Yagi; T Okabayashi; A Yamada; M Konagai
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Volume：89, Number：1-3, First page：303, Last page：305, Feb. 2002, [Reviewed]
English, Scientific journal
ISSN：0921-5107, Web of Science ID：WOS:000174015300063

Characterization of tensile strained Si1-yCy alloy grown by photo- and plasma chemical vapor deposition at very low temperature　　　　　　　　　　　　　　　
K Abe; S Yagi; T Okabayashi; A Yamada; M Konagai
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Volume：40, Number：7, First page：4440, Last page：4444, Jul. 2001, [Reviewed]
English, Scientific journal
DOI：https://doi.org/10.1143/JJAP.40.4440
DOI ID：10.1143/JJAP.40.4440, ISSN：0021-4922, CiNii Articles ID：10006237194, Web of Science ID：WOS:000170772500002

Epitaxial growth of Si1-yCy film by low temperature chemical vapor deposition　　　　　　　　　　　　　　　
S Yagi; K Abe; A Yamada; M Konagai
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, Volume：39, Number：11A, First page：L1078, Last page：L1080, Nov. 2000, [Reviewed], [Lead]
English, Scientific journal
ISSN：0021-4922, Web of Science ID：WOS:000167218300002

■ MISC

Conversion Efficiency Analysis of Tandem Solar Cells with Intermediate Band Tunnel Connection　　　　　　　　　　　　　　　
Shuhei Yagi; Hiroyuki Yaguchi
First page：1, Last page：1, 11 Jun. 2023
DOI：https://doi.org/10.1109/pvsc48320.2023.10359986
DOI ID：10.1109/pvsc48320.2023.10359986

Study on the Binding Energy of Biexcitons Localized at Isoelectronic Traps in Nitrogen δ-Doped GaAs　　　　　　　　　　　　　　　
矢野裕子; 高宮健吾; 藤川沙千恵; 八木修平; 矢口裕之; 小林真隆; 秋山英文
応用物理学会春季学術講演会講演予稿集(CD-ROM), Volume：70th, 2023
ISSN：2436-7613, J-Global ID：202302286333664872

Excitation Power Dependence of Emission Lines from Er Doped GaAs　　　　　　　　　　　　　　　
伊藤駿平; 高宮健吾; 小林真隆; 八木修平; 秋山英文; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Volume：69th, First page：2624, Last page：2624, 2022
The Japan Society of Applied Physics, Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2022.1.0_2624
DOI ID：10.11470/jsapmeeting.2022.1.0_2624, ISSN：2436-7613, eISSN：2436-7613, J-Global ID：202202243673645430

Degradation of Photoluminescence Intensity of GaAs under High Power Density Excitation　　　　　　　　　　　　　　　
Takaoka Shohei; Md. Zamil Sultan; Takamiya Kengo; Yagi Shuhei; Yaguchi Hiroyuki
JSAP Annual Meetings Extended Abstracts, Volume：2021.2, First page：3057, Last page：3057, 26 Aug. 2021
The Japan Society of Applied Physics, Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2021.2.0_3057
DOI ID：10.11470/jsapmeeting.2021.2.0_3057, eISSN：2436-7613

Optical Characterization of Carrier Recombination Process in Intermediate Type GaPN Alloy: Comparison of Nitrogen Content Between 1.4% and 3.2%　　　　　　　　　　　　　　　
Iwai Hiroki; Ferdous Sanjida; Kamata Norihiko; Yagi Shuhei; Yaguchi Hiroyuki
JSAP Annual Meetings Extended Abstracts, Volume：2021.1, First page：2708, Last page：2708, 26 Feb. 2021
The Japan Society of Applied Physics, Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2021.1.0_2708
DOI ID：10.11470/jsapmeeting.2021.1.0_2708, eISSN：2436-7613

Biexciton luminescence from individual isoelectronic traps in N -doped GaAs grown on (111) substrates　　　　　　　　　　　　　　　
Takaoka Shouhei; Takamiya Kengo; Yagi Shuhei; Hazama Yuji; Akiyama Hidefumi; Yaguchi Hiroyuki
JSAP Annual Meetings Extended Abstracts, Volume：2019.2, First page：3419, Last page：3419, 04 Sep. 2019
The Japan Society of Applied Physics, Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2019.2.0_3419
DOI ID：10.11470/jsapmeeting.2019.2.0_3419, eISSN：2436-7613

Characterization of Carrier Recombination Levels in Nitrogen δ-Doped GaAs Superlattices by Two- Wavelength Excited Photoluminescence Method　　　　　　　　　　　　　　　
Nagata Kota; Norihiko Kamata; Syuuhei Yagi; Hiroyuki Yaguchi
JSAP Annual Meetings Extended Abstracts, Volume：2019.2, First page：3688, Last page：3688, 04 Sep. 2019
The Japan Society of Applied Physics, Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2019.2.0_3688
DOI ID：10.11470/jsapmeeting.2019.2.0_3688, eISSN：2436-7613

Growth of InN nanocolumns using a cubic GaN interlayer by RF-MBE　　　　　　　　　　　　　　　
Onuma Rikiya; Yagi Shuhei; Yaguchi Hiroyuki
JSAP Annual Meetings Extended Abstracts, Volume：2019.2, First page：3485, Last page：3485, 04 Sep. 2019
The Japan Society of Applied Physics, Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2019.2.0_3485
DOI ID：10.11470/jsapmeeting.2019.2.0_3485, eISSN：2436-7613

Fabrication of cubic InN nanowires on GaN V-groove structures　　　　　　　　　　　　　　　
Nishimura Yusuke; Shuhei Yagi; Hiroyuki Yaguchi
JSAP Annual Meetings Extended Abstracts, Volume：2019.2, First page：3486, Last page：3486, 04 Sep. 2019
The Japan Society of Applied Physics, Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2019.2.0_3486
DOI ID：10.11470/jsapmeeting.2019.2.0_3486, eISSN：2436-7613

Study of nonradiative recombination centers in GaAs:N δ-doped superlattices structures revealed by below-gap excitation light　　　　　　　　　　　　　　　
Hiroyuki Yaguchi; Norihiko Kamata; M. Julkarnain; A. Z. M. Touhidul Islam; Yoshitaka Okada; Shuhei Yagi; Md. Dulal Haque
First page：1, Last page：4, 01 Jul. 2019
Nonradiative recombination (NRR) centers in GaAs:N $\delta$-doped superlattices (SLs) grown by molecular beam epitaxy (MBE) has been investigated by two-wavelength excited photoluminescence (TWEPL) method for conduction band scheme. The PL intensity of $E_{-}$ band of the samples with lower nitrogen (N) concentration (0.317% N) initially increases after addition of below-gap excitation (BGE) light over above-gap excitation (AGE) light and then quenches at higher BGE density and energy, while that of GaAs (e-A°) emission of GaAs layers decreases monotonically. For sample with higher N concentration (1.18% N) both the $E _{-}$ band and GaAs (e-A°) emission decreases monotonically with enhancing BGE density and degree of decreasing of PL intensity is higher compared to the low N concentration sample. The quenching of PL intensity indicates the existence of NRR centers in GaAs layers and GaAs:N $\delta$-doped SL region. The recombination models have been proposed for explaining the results from the experiments.
DOI：https://doi.org/10.1109/ic4me247184.2019.9036541
DOI ID：10.1109/ic4me247184.2019.9036541

第一原理計算によるGaAsN混晶中のN原子配置のバンド構造への影響の検討
塚原悠太; 八木修平; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：79th, First page：ROMBUNNO.18p‐234B‐6, 05 Sep. 2018
Japanese
J-Global ID：201802221348887183

二波長励起PL測定によるGaPN混晶のアップコンバージョン発光特性評価
高橋渉; 高宮健吾; 八木修平; 狭間優治; 秋山英文; 矢口裕之; 鎌田憲彦
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：79th, First page：ROMBUNNO.18p‐234B‐4, 05 Sep. 2018
Japanese
J-Global ID：201802238518840151

規則配列化InNドットの作製に向けた立方晶GaN表面ステップ構造の成長条件依存性
大倉一将; 高宮健吾; 八木修平; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：79th, First page：ROMBUNNO.19p‐PA4‐25, 05 Sep. 2018
Japanese
J-Global ID：201802262792771299

RF‐MBE成長による4H‐SiC(000-1)基板上へのN極性GaNの作製
杉浦亮; 高宮健吾; 八木修平; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：79th, First page：ROMBUNNO.19p‐PA4‐14, Sep. 2018
Japanese
J-Global ID：201802290158483556

MBE成長したErドープGaAsの発光特性に対するアニーリングの影響
五十嵐大輔; 高宮健吾; 伊藤隆; 八木修平; 秋山英文; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Volume：65th, First page：ROMBUNNO.18p‐P8‐12, 05 Mar. 2018
Japanese
J-Global ID：201802217506237741

Growth of InGaAs: N delta-doped superlattices for multi-junction solar cells　　　　　　　　　　　　　　　
Umeda, Shumpei; Yagi, Shuhei; Miyashita, Naoya; Okada, Yoshitaka; Yaguchi, Hiroyuki
2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC), First page：1861, Last page：1864, 2018
English
ISSN：2159-2330, eISSN：2159-2349, Web of Science ID：WOS:000469200401194

GaPN混晶のアップコンバージョン発光
高橋渉; 高宮健吾; 八木修平; 伊藤隆; 秋山英文; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：78th, First page：ROMBUNNO.6p‐PA7‐1, 25 Aug. 2017
Japanese
J-Global ID：201702255331459722

新規可溶性オリゴチオフェン系電子ドナー材料を用いた有機薄膜太陽電池への溶媒蒸気アニーリング効果
秋山雄希; 秋山雄希; 橘浩昭; 阿澄玲子; 宮寺哲彦; 近松真之; 八木修平; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：78th, First page：ROMBUNNO.5p‐PA3‐7, 25 Aug. 2017
Japanese
J-Global ID：201702271908434102

希釈窒化物半導体中の窒素原子配置によるバンドギャップへの影響
宮島数喜; 八木修平; 庄司靖; 岡田至崇; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：78th, First page：ROMBUNNO.5p‐C21‐1, 25 Aug. 2017
Japanese
J-Global ID：201702278507065273

基板再利用に向けたELO後基板の清浄化工程と再成長の検討
宮下直也; 八木修平; 渡辺健太郎; 木村大希; SODABANLU Hassanet; 中田達也; 杉山正和; 杉山正和; 岡田至崇
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：78th, First page：ROMBUNNO.6p‐PA5‐23, Aug. 2017
Japanese
J-Global ID：201702288830548138

ErドープGaAsからの発光のMBE成長温度依存性
五十嵐大輔; 高宮健吾; 八木修平; 伊藤隆; 秋山英文; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Volume：64th, First page：ROMBUNNO.17p‐P2‐8, 01 Mar. 2017
Japanese
J-Global ID：201702218011102092

1eV帯InGaAs:Nδドープ超格子の作製
梅田峻平; 八木修平; 宮下直也; 岡田至崇; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Volume：64th, First page：ROMBUNNO.14p‐B6‐9, 01 Mar. 2017
Japanese
J-Global ID：201702242750399704

n型GaAs:Nδドープ超格子の電気的特性評価　　　　　　　　　　　　　　　
加藤諒; 八木修平; 岡田至崇; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Volume：64th, First page：ROMBUNNO.15p‐P16‐8, Last page：3418, 01 Mar. 2017
The Japan Society of Applied Physics, Japanese
DOI：https://doi.org/10.11470/jsapmeeting.2019.2.0_3418
DOI ID：10.11470/jsapmeeting.2019.2.0_3418, eISSN：2436-7613, J-Global ID：201702266277509859

DRCN5T/PCBMバルクヘテロ接合膜の溶媒蒸気アニーリング過程のその場観察
新井康司; 新井康司; 宮寺哲彦; 小金澤智之; 秋山雄希; 秋山雄希; 橘浩昭; 吉田郵司; 近松真之; 八木修平; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Volume：64th, First page：ROMBUNNO.16p‐F201‐3, 01 Mar. 2017
Japanese
ISSN：2436-7613, J-Global ID：201702283758456263

4H‐SiC微傾斜基板上に作製した自己組織化InN/GaNドットの配列性制御
松岡圭佑; 八木修平; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：77th, First page：ROMBUNNO.16a‐P5‐11, 01 Sep. 2016
Japanese
J-Global ID：201602236541953232

レーザ照射によるGaInNAs混晶半導体の発光効率への影響
米倉成一; 高宮健吾; 八木修平; 上田修; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：77th, First page：ROMBUNNO.15a‐P11‐11, 01 Sep. 2016
Japanese
J-Global ID：201602248642339078

新規可溶性オリゴチオフェン系電子ドナー材料を用いた有機薄膜太陽電池
秋山雄希; 秋山雄希; 橘浩昭; 阿澄玲子; 宮寺哲彦; 近松真之; 小金澤智之; 矢口裕之; 八木修平
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：77th, First page：ROMBUNNO.13p‐P9‐11, 01 Sep. 2016
Japanese
ISSN：2436-7613, J-Global ID：201602279619229573

添加剤導入によるP3HT薄膜の結晶成長過程のその場観察評価
新井康司; 新井康司; 宮寺哲彦; 小金澤智之; 秋山雄希; 秋山雄希; 杉田武; 近松真之; 八木修平; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Volume：63rd, First page：ROMBUNNO.19P-W242-6, 03 Mar. 2016
Japanese
ISSN：2436-7613, J-Global ID：201602206159061072

MgO微傾斜基板上に作製した立方晶InNドット配列構造の堆積量依存性
石井健一; 八木修平; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Volume：63rd, First page：ROMBUNNO.22A-P6-10, 03 Mar. 2016
Japanese
J-Global ID：201602218989088990

4H‐SiC基板の二波長励起PL測定―BGE強度依存性―
近藤圭太郎; 福田武司; 本多善太郎; 鎌田憲彦; 八木修平; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Volume：63rd, First page：ROMBUNNO.20A-H101-9, 03 Mar. 2016
Japanese
J-Global ID：201602220555984119

Self-Organized Growth of Cubic InN Dot Arrays on MgO (001) Vicinal Substrates　　　　　　　　　　　　　　　
Kenichi Ishii; Shuhei Yagi; Hiroyuki Yaguchi
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), 2016, [Reviewed]
English
Web of Science ID：WOS:000392285400156

Optical Characterization of Carrier Recombination Processes in GaPN by Two-Wavelength Excited Photoluminescence　　　　　　　　　　　　　　　
Makiko Suetsugu; Norihiko Kamata; Shuhei Yagi; Hiroyuki Yaguchi; Takeshi Fukuda; Fredrik Karlsson; Per-Olof Holts
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), 2016, [Reviewed]
English
Web of Science ID：WOS:000392285400155

Two-Wavelength Excited Photoluminescence in 4H-SiC Substrate -Dependence on BGE Power Density-　　　　　　　　　　　　　　　
Keitaro Kondo; Norihiko Kamata; Shuhei Yagi; Hiroyuki Yaguchi; Takeshi Fukuda; Zentaro Honda
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), 2016, [Reviewed]
English
Web of Science ID：WOS:000392285400077

AlAs/GaAs分布ブラッグ反射鏡を有するEr δドープGaAsの発光特性
須藤真樹; JIN R.G; 高宮健吾; 八木修平; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：76th, First page：ROMBUNNO.13P-PB2-5, 31 Aug. 2015
Japanese
J-Global ID：201502200169002575

フォトルミネッセンス法による4H‐SiCエピ層中の酸化誘因欠陥の観察
浅藤亮祐; 八木修平; 土方泰斗; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：76th, First page：ROMBUNNO.15A-1A-11, 31 Aug. 2015
Japanese
J-Global ID：201502200868414404

微傾斜基板を用いたシングルドメイン立方晶GaNの成長と立方晶InNドット配列の形成
石井健一; 折原操; 八木修平; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：76th, First page：ROMBUNNO.14P-PB12-19, 31 Aug. 2015
Japanese
J-Global ID：201502207396200760

第一原理計算によるInAsN混晶の伝導帯の解析
宮崎貴史; 八木修平; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：76th, First page：ROMBUNNO.13P-PB2-1, 31 Aug. 2015
Japanese
J-Global ID：201502207598351728

GaAs MBE成長におけるEr原子の表面偏析の温度依存性
JIN R; 高宮健吾; 八木修平; 土方泰斗; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：76th, First page：ROMBUNNO.13P-PB2-3, 31 Aug. 2015
Japanese
J-Global ID：201502215233126671

ErドープGaAsからの発光に対する低温成長の影響
飯村啓泰; JIN R.G; 高宮健吾; 八木修平; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：76th, First page：ROMBUNNO.13P-PB2-4, 31 Aug. 2015
Japanese
J-Global ID：201502221370971885

GaAs:Nδドープ超格子を有する太陽電池の二段階光吸収
鈴木智也; 八木修平; 土方泰斗; 岡田至崇; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Volume：62nd, First page：ROMBUNNO.13P-P19-17, 26 Feb. 2015
Japanese
J-Global ID：201502212728546006

4H‐SiC(0001)微傾斜基板を用いたInNドット配列の自己形成
森誠也; 高宮健吾; 折原操; 八木修平; 土方泰斗; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Volume：62nd, First page：ROMBUNNO.12P-P16-9, 26 Feb. 2015
Japanese
J-Global ID：201502237562705111

第一原理計算によるInAsN混晶のバンド構造に関する研究
宮崎貴史; 八木修平; 土方泰斗; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Volume：62nd, First page：ROMBUNNO.13A-P15-2, 26 Feb. 2015
Japanese
J-Global ID：201502238490747422

中間バンド型太陽電池に向けたGaAs:Nδドープ超格子のMBE成長
鈴木智也; 長田一輝; 八木修平; 内藤駿弥; 土方泰斗; 岡田至崇; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：75th, First page：ROMBUNNO.19P-PB3-10, 01 Sep. 2014
Japanese
J-Global ID：201402204873316264

SiC酸化へのArアニール導入による酸化膜成長速度の変化
今野良太郎; 八木修平; 土方泰斗; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：75th, First page：ROMBUNNO.19A-PB5-11, 01 Sep. 2014
Japanese
J-Global ID：201402218643252926

GaAs:Nδドープ超格子による中間バンド構造のエネルギー制御
長田一輝; 鈴木智也; 八木修平; 内藤駿弥; 庄司靖; 岡田至崇; 土方泰斗; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：75th, First page：ROMBUNNO.19A-S1-6, 01 Sep. 2014
Japanese
J-Global ID：201402223396439019

RF‐MBE法によるGaAs(110)基板上へのGaNの成長
五十嵐健; 折原操; 八木修平; 土方泰斗; 窪谷茂幸; 片山竜二; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Volume：61st, First page：ROMBUNNO.20A-PG1-15, 03 Mar. 2014
Japanese
J-Global ID：201402228659986330

二波長励起PLによるGaPN混晶の光学特性評価
末次麻希子; TOUHIDUL ISLAM A.Z.M; 花岡司; 福田武司; 鎌田憲彦; 八木修平; 矢口裕之
照明学会全国大会講演論文集(CD-ROM), Volume：47th, First page：ROMBUNNO.10-3, 2014
Japanese
J-Global ID：201402295481095788

六方晶SiC無極性面の酸化過程の実時間観察
後藤大祐; 八木修平; 土方泰斗; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：74th, First page：ROMBUNNO.19A-P9-4, 31 Aug. 2013
Japanese
J-Global ID：201302203339195393

窒素δドープGaAs中の単一等電子トラップによる励起子分子発光の時間分解フォトルミネッセンス測定
高宮健吾; 八木修平; 土方泰斗; 望月敏光; 吉田正裕; 秋山英文; 窪谷茂幸; 片山竜二; 尾鍋研太郎; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：74th, First page：ROMBUNNO.19A-P8-11, 31 Aug. 2013
Japanese
J-Global ID：201302208930844769

GaInNAs量子井戸の発光効率へのレーザー照射の影響
岩崎卓也; 八木修平; 土方泰斗; 上田修; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：74th, First page：ROMBUNNO.19A-P8-13, 31 Aug. 2013
Japanese
J-Global ID：201302210710989914

GaAsN/GaAs量子井戸構造からの発光の励起強度依存性
山崎泰由; 八木修平; 土方泰斗; 尾鍋研太郎; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：74th, First page：ROMBUNNO.19A-P8-14, 31 Aug. 2013
Japanese
J-Global ID：201302253457891105

GaAs:Nδドープ超格子を用いた中間バンド型太陽電池の特性評価
八木修平; 野口駿介; 土方泰斗; 窪谷茂幸; 尾鍋研太郎; 岡田至崇; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：74th, First page：ROMBUNNO.17P-D6-14, 31 Aug. 2013
Japanese
J-Global ID：201302263267421817

InN/GaNドット多重積層構造に向けたGaNキャップ層成長条件の検討
徳田英俊; 折原操; 八木修平; 土方泰斗; 矢口裕之
応用物理学会秋季学術講演会講演予稿集(CD-ROM), Volume：74th, First page：ROMBUNNO.17P-P7-15, 31 Aug. 2013
Japanese
J-Global ID：201302285385764625

An attempt for clarification of SiC oxidation mechanism : Common/different point to Si oxidation　　　　　　　　　　　　　　　
HIJIKATA Yasuto; YAGI Shuhei; YAGUCHI Hiroyuki
Technical report of IEICE. SDM, Volume：113, Number：87, First page：91, Last page：96, 18 Jun. 2013
Further understanding of the SiC oxidization mechanism is indispensable for MOSFET using a SiC semiconductor to exceed the conventional Si-based power devices. In this report, we summarize what have been found so far about the oxidization mechanism of SiC, and the research tendency and its subjects in recent years are introduced in terms of common or difference against Si oxidization.
The Institute of Electronics, Information and Communication Engineers, Japanese
ISSN：0913-5685, CiNii Articles ID：110009779110, CiNii Books ID：AN10013254

An attempt for clarification of SiC oxidation mechanism-Common/different point to Si oxidation-
土方泰斗; 八木修平; 矢口裕之
電子情報通信学会技術研究報告, Volume：113, Number：87(SDM2013 44-64), First page：91, Last page：96, 11 Jun. 2013
Japanese
ISSN：0913-5685, J-Global ID：201302213724044520

RF‐MBE法による立方晶InNドット積層構造の作製
鈴木潤一郎; 折原操; 八木修平; 土方泰斗; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Volume：60th, First page：ROMBUNNO.28P-PA1-1, 11 Mar. 2013
Japanese
J-Global ID：201302223183186110

4H‐SiCエピ膜中積層欠陥への熱酸化の影響について
宮野祐太郎; 八木修平; 土方泰斗; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Volume：60th, First page：ROMBUNNO.29P-PB4-9, 11 Mar. 2013
Japanese
J-Global ID：201302267568241755

中間バンド型太陽電池へ向けたGaAs中窒素ドープ超格子のE₊バンド光吸収の観測
野口駿介; 八木修平; 土方泰斗; 窪谷茂幸; 岡田至崇; 尾鍋研太郎; 矢口裕之
応用物理学会春季学術講演会講演予稿集(CD-ROM), Volume：60th, First page：ROMBUNNO.29A-PB7-19, 11 Mar. 2013
Japanese
J-Global ID：201302299241158730

ホットキャリアを利用した新型太陽電池の開発
八木修平; 岡田至崇
ゼネラル石油研究奨励財団研究報告書, Number：15, First page：8, Last page：11, 01 Feb. 2013
Japanese
J-Global ID：201402263729291920

Optical Absorption by E+ Miniband of GaAs:N delta-Doped Superlattices　　　　　　　　　　　　　　　
Yagi, Shuhei; Noguchi, Shunsuke; Hijikata, Yasuto; Kuboya, Shigeyuki; Onabe, Kentaro; Okada, Yoshitaka; Yaguchi, Hiroyuki
2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), First page：2490, Last page：2493, 2013
English
ISSN：0160-8371, Web of Science ID：WOS:000340054100565

Thermal Oxidation Mechanism of Silicon Carbide　　　　　　　　　　　　　　　
Yasuto Hijikata; Shuhei Yagi; Hiroyuki Yaguchi; Sadafumi Yoshi
Physics and Technology of Silicon Carbide Devices, Oct. 2012
{InTech}
DOI：https://doi.org/10.5772/50748
DOI ID：10.5772/50748, ORCID put code：79780638

スパッタ薄膜成長による4H‐SiC基板中の非発光再結合中心生成
加藤寿悠; 八木修平; 土方泰斗; 矢口裕之
応用物理学会学術講演会講演予稿集(CD-ROM), Volume：73rd, First page：ROMBUNNO.11P-PB2-12, 27 Aug. 2012
Japanese
J-Global ID：201202222514720266

堆積と熱酸化による4H‐SiC MOS構造の作製
大谷篤志; 八木修平; 土方泰斗; 矢口裕之
応用物理学会学術講演会講演予稿集(CD-ROM), Volume：73rd, First page：ROMBUNNO.11P-PB2-4, 27 Aug. 2012
Japanese
J-Global ID：201202230425306688

InN成長におけるInN高温バッファ層の効果に関する検討
増田篤; 折原操; 八木修平; 土方泰斗; 矢口裕之
応用物理学会学術講演会講演予稿集(CD-ROM), Volume：73rd, First page：ROMBUNNO.12A-PB4-11, 27 Aug. 2012
Japanese
J-Global ID：201202235572897960

第一原理計算によるGaAsNの電子構造に対する原子配置の影響に関する研究
坂本圭; 八木修平; 土方泰斗; 矢口裕之
応用物理学会学術講演会講演予稿集(CD-ROM), Volume：73rd, First page：ROMBUNNO.12A-PB4-22, 27 Aug. 2012
Japanese
J-Global ID：201202252900504833

窒素δドープGaAs中の単一等電子トラップからの発光のフォトルミネッセンス励起分光測定
高宮健吾; 八木修平; 土方泰斗; 望月敏光; 吉田正裕; 秋山英文; 窪谷茂幸; 尾鍋研太郎; 片山竜二; 矢口裕之
応用物理学会学術講演会講演予稿集(CD-ROM), Volume：73rd, First page：ROMBUNNO.12P-PB11-20, 27 Aug. 2012
Japanese
J-Global ID：201202257209482469

MBE法によるGaAs(001)基板上へのErGaAs混晶の成長
JIN R; 八木修平; 土方泰斗; 窪谷茂幸; 尾鍋研太郎; 片山竜二; 矢口裕之
応用物理学会学術講演会講演予稿集(CD-ROM), Volume：73rd, First page：ROMBUNNO.12P-PB11-16, 27 Aug. 2012
Japanese
J-Global ID：201202271314197829

RF‐MBE法によるGaAs(110)基板上への半極性InN成長に対する窒化の影響
五十嵐健; 折原操; 八木修平; 土方泰斗; 矢口裕之
応用物理学会学術講演会講演予稿集(CD-ROM), Volume：73rd, First page：ROMBUNNO.12A-PB4-12, 27 Aug. 2012
Japanese
J-Global ID：201202279081759741

RF‐MBE法によるTiO₂(001)基板上への立方晶GaNの成長
折原操; 八木修平; 土方泰斗; 矢口裕之
応用物理学会学術講演会講演予稿集(CD-ROM), Volume：73rd, First page：ROMBUNNO.13P-H9-17, 27 Aug. 2012
Japanese
J-Global ID：201202285680090400

Application of Quantum Nanostructures to High-Efficiency Solar Cells　　　　　　　　　　　　　　　
Shuhei Yagi; Yoshitaka Okada
JSAP Annual Meetings Extended Abstracts, Volume：2012.1, First page：162, Last page：162, 29 Feb. 2012
The Japan Society of Applied Physics, English
DOI：https://doi.org/10.11470/jsapmeeting.2012.1.0_162
DOI ID：10.11470/jsapmeeting.2012.1.0_162, eISSN：2436-7613

熱酸化が4H‐SiCエピ膜中積層欠陥に及ぼす影響の顕微フォトルミネッセンスによる観察
山形光; 八木修平; 土方泰斗; 矢口裕之
応用物理学関係連合講演会講演予稿集(CD-ROM), Volume：59th, First page：ROMBUNNO.17P-A8-11, 29 Feb. 2012
Japanese
J-Global ID：201202246861327481

窒素δドープGaAsにおける単一等電子トラップからの励起子分子発光
高宮健吾; 福島俊之; 星野真也; 八木修平; 土方泰斗; 望月敏光; 吉田正裕; 秋山英文; 窪谷茂幸; 尾鍋研太郎; 片山竜二; 矢口裕之
応用物理学関係連合講演会講演予稿集(CD-ROM), Volume：59th, First page：ROMBUNNO.17A-A8-9, 29 Feb. 2012
Japanese
J-Global ID：201202254067781707

分光エリプソメトリによる立方晶InNの光学的特性評価
吉田倫大; 折原操; 八木修平; 土方泰斗; 矢口裕之
応用物理学関係連合講演会講演予稿集(CD-ROM), Volume：59th, First page：ROMBUNNO.16A-DP1-27, 29 Feb. 2012
Japanese
J-Global ID：201202270422534312

GaAs中窒素δドープ超格子のエネルギー構造評価
野口駿介; 八木修平; 土方泰斗; 窪谷茂幸; 尾鍋研太郎; 矢口裕之
応用物理学関係連合講演会講演予稿集(CD-ROM), Volume：59th, First page：ROMBUNNO.17P-DP3-12, 29 Feb. 2012
Japanese
J-Global ID：201202272956548214

窒素δドープGaAs中の窒素原子対が形成する単一の等電子トラップからの発光に対する一軸応力の影響
新井佑也; 星野真也; 高宮健吾; 八木修平; 土方泰斗; 望月敏光; 吉田正裕; 秋山英文; 窪谷茂幸; 尾鍋研太郎; 矢口裕之
応用物理学関係連合講演会講演予稿集(CD-ROM), Volume：59th, First page：ROMBUNNO.17P-DP3-13, 29 Feb. 2012
Japanese
J-Global ID：201202279946154581

Analysis of the energy structure of nitrogen δ-doped GaAs superlattices for high efficiency intermediate band solar cells　　　　　　　　　　　　　　　
Shunsuke Noguchi; Shuhei Yagi; Yasuto Hijikata; Kentaro Onabe; Shigeyuki Kuboya; Hiroyuki Yaguchi
Conference Record of the IEEE Photovoltaic Specialists Conference, First page：83, Last page：86, 2012
English
DOI：https://doi.org/10.1109/PVSC.2012.6317573
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84869429937&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84869429937&origin=inward
DOI ID：10.1109/PVSC.2012.6317573, ISSN：0160-8371, SCOPUS ID：84869429937

RF‐MBE法によるInN(10‐13)及びInGaN(10‐13)のGaAs(110)基板上への成長
折原操; 八木修平; 土方泰斗; 矢口裕之
応用物理学会学術講演会講演予稿集(CD-ROM), Volume：72nd, First page：ROMBUNNO.30A-ZE-8, 16 Aug. 2011
Japanese
J-Global ID：201102239405788481

共鳴トンネル構造を用いたエネルギー選択層における熱励起電流のホットキャリア型太陽電池特性への影響
八木修平; 土方泰斗; 岡田至崇; 矢口裕之
応用物理学会学術講演会講演予稿集(CD-ROM), Volume：72nd, First page：ROMBUNNO.1A-H-12, 16 Aug. 2011
Japanese
J-Global ID：201102252261232919

Quantum well double barrier resonant tunneling structures for selective contacts of hot carrier solar cells　　　　　　　　　　　　　　　
Shuhei Yagi; Yasuto Hijikata; Yoshitaka Okada; Hiroyuki Yaguchi
Conference Record of the IEEE Photovoltaic Specialists Conference, First page：003309, Last page：003312, 2011
DOI：https://doi.org/10.1109/PVSC.2011.6186646
Scopus：https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84861083769&origin=inward
Scopus Citedby：https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84861083769&origin=inward
DOI ID：10.1109/PVSC.2011.6186646, ISSN：0160-8371, SCOPUS ID：84861083769

極低窒素濃度GaAsNのフォトリフレクタンススペクトル
大久保航; 石川輝; 八木修平; 土方泰斗; 吉田貞史; 片山竜二; 尾鍋研太郎; 矢口裕之
応用物理学会学術講演会講演予稿集(CD-ROM), Volume：71st, First page：ROMBUNNO.14P-ZV-1, 30 Aug. 2010
Japanese
J-Global ID：201002208945322457

極低窒素濃度GaAsN中の等電子トラップからの発光に対する一軸応力の影響
新井佑也; 遠藤雄太; 八木修平; 土方泰斗; 窪谷茂幸; 尾鍋研太郎; 片山竜二; 矢口裕之
応用物理学会学術講演会講演予稿集(CD-ROM), Volume：71st, First page：ROMBUNNO.14P-ZV-2, 30 Aug. 2010
Japanese
J-Global ID：201002211648568235

酸化中のSiC層へのSiおよびC原子放出についての理論的検討
土方泰斗; 八木修平; 矢口裕之; 吉田貞史
応用物理学会学術講演会講演予稿集(CD-ROM), Volume：71st, First page：ROMBUNNO.15A-ZS-10, 30 Aug. 2010
Japanese
J-Global ID：201002219694574542

高密度InAs/GaNAs量子ドット太陽電池構造の光学特性評価
大島隆治; 高田彩未; 八木修平; 赤羽浩一; 玉置亮; 宮野健次郎; 岡田至崇
応用物理学会学術講演会講演予稿集(CD-ROM), Volume：71st, First page：ROMBUNNO.16A-ZV-3, 30 Aug. 2010
Japanese
J-Global ID：201002240598104615

FABRICATION OF RESONANT TUNNELING STRUCTURES FOR SELECTIVE ENERGY CONTACT OF HOT CARRIER SOLAR CELL BASED ON III-V SEMICONDUCTORS　　　　　　　　　　　　　　　
Shuhei Yagi; Yoshitaka Okada
35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, First page：1213, Last page：1216, 2010
English
DOI：https://doi.org/10.1109/PVSC.2010.5614058
DOI ID：10.1109/PVSC.2010.5614058, ISSN：0160-8371, Web of Science ID：WOS:000287579501092

ホットキャリア太陽電池に向けたエネルギー選択層の評価(II)
八木修平; 大島隆治; 岡田至崇
応用物理学会学術講演会講演予稿集, Volume：70th, Number：3, First page：1308, 08 Sep. 2009
Japanese
J-Global ID：200902295067574313

ホットキャリア太陽電池に向けたエネルギー選択層(SEC)の評価
八木修平; 大島隆治; 岡田至崇
応用物理学関係連合講演会講演予稿集, Volume：56th, Number：3, First page：1453, 30 Mar. 2009
Japanese
J-Global ID：200902253305069261

EVALUATION OF SELECTIVE ENERGY CONTACT FOR HOT CARRIER SOLAR CELLS BASED ON III-V SEMICONDUCTORS　　　　　　　　　　　　　　　
Shuhei Yagi; Ryuji Oshima; Yoshitaka Okada
2009 34TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-3, First page：1322, Last page：1325, 2009
English
ISSN：0160-8371, Web of Science ID：WOS:000280345900288

InGaAs/GaAs系超格子構造太陽電池におけるキャリアの脱出過程
八木修平; 永持創一朗; 大島隆治; 岡田至崇
応用物理学関係連合講演会講演予稿集, Volume：55th, Number：1, First page：369, 27 Mar. 2008
Japanese
J-Global ID：200902231653046000

シリコン結晶中へのδドーピング III:電気特性
八木修平; 坂本邦博; 三木一司
応用物理学会学術講演会講演予稿集, Volume：67th, Number：1, First page：361, 29 Aug. 2006
Japanese
J-Global ID：200902263589291134

シリコン結晶中へのδドーピング I:ビスマス原子細線を利用した手法
三木一司; 八木修平; 坂本邦博; 深津晋
応用物理学関係連合講演会講演予稿集, Volume：53rd, Number：1, First page：405, 22 Mar. 2006
Japanese
J-Global ID：200902225954321952

シリコン結晶中へのδドーピング II:ビスマスとエルビウムの共ドーピング
八木修平; 安原望; 坂本邦博; 深津晋; 三木一司
応用物理学関係連合講演会講演予稿集, Volume：53rd, Number：1, First page：405, 22 Mar. 2006
Japanese
J-Global ID：200902243706251024

光学マルチセルを使った画像処理用2次元分子コンピュータの試作
日塔光一; 八木修平; 大橋勝文; 三木一司
応用物理学関係連合講演会講演予稿集, Volume：53rd, Number：3, First page：1352, 22 Mar. 2006
Japanese
J-Global ID：200902257906680133

埋め込み型ビスマス原子細線 4:電気伝導測定
日塔光一; 八木修平; 矢代航; 白木一郎; 坂本邦博; 三木一司
応用物理学関係連合講演会講演予稿集, Volume：52nd, Number：2, First page：755, 29 Mar. 2005
Japanese
J-Global ID：200902236484514645

埋め込み型Bi原子細線 1:加熱による消滅
八木修平; 矢代航; 坂本邦博; 三木一司
応用物理学関係連合講演会講演予稿集, Volume：52nd, Number：2, First page：754, 29 Mar. 2005
Japanese
J-Global ID：200902297810926141

ガスソースMBE法により作製したSi_1-yC_y混晶薄膜の熱的安定性
阿部克也; 矢部千晶; 八木修平; 綿引達郎; 山田明; 小長井誠
応用物理学関係連合講演会講演予稿集, Volume：50th, Number：1, First page：463, 27 Mar. 2003
Japanese
J-Global ID：200902229600851658

Theoretical and Experimental Analyses of C stability in Epitaxial Si_1-y_C_y_ Films　　　　　　　　　　　　　　　
S. Yagi; K. Abe; A; Yamada; M. Konagai
Third International Conference on SiGe(C) Epitaxy and Heterostructures, First page：62, Last page：64, 2003

Novel Carbon Source (1,3-Disilabutane) for the Deposition of Microcrystalline Silicon Carbon　　　　　　　　　　　　　　　
Shuhei Yagi; Takashi Okabayashi; Katsuya Abe Akira Yamada; Makoto Konagai
3rd World Conference on Photovoltaic Energy Conversion, Abstracts for the Technical Program, First page：101, 2003

1,3‐ジシラブタンを用いたSi_1-yC_y薄膜の低温エピタキシャル成長
八木修平; 阿部克也; 山田明; 小長井誠
応用物理学会学術講演会講演予稿集, Volume：63rd, Number：1, First page：372, 24 Sep. 2002
Japanese
J-Global ID：200902114548381468

1,3‐ジシラブタンをCソースに用いた微結晶Si_1-xC_x薄膜の作製
岡林尚志; 八木修平; 阿部克也; 山田明; 小長井誠
応用物理学会学術講演会講演予稿集, Volume：63rd, Number：2, First page：833, 24 Sep. 2002
Japanese
J-Global ID：200902176453380338

1,3‐ジシラブタンをCソースに用いた光CVD法によるa‐SiC薄膜の作製
岡林尚志; 八木修平; 阿部克也; 山田明; 小長井誠
応用物理学関係連合講演会講演予稿集, Volume：49th, Number：2, First page：920, 27 Mar. 2002
Japanese
J-Global ID：200902102616909370

IV族混晶半導体Si_1-yC_yにおけるCの熱的安定性
八木修平; 阿部克也; 岡林尚志; 米山雄一; 山田明; 小長井誠
応用物理学関係連合講演会講演予稿集, Volume：49th, Number：1, First page：412, 27 Mar. 2002
Japanese
J-Global ID：200902126295642225

Novel carbon source (1,3-disilabutane) for the deposition of p-type a-SiC　　　　　　　　　　　　　　　
S Yagi; T Okkabayashi; K Abe; A Yamada; M Konagai
AMORPHOUS AND HETEROGENEOUS SILICON-BASED FILMS-2002, Volume：715, First page：533, Last page：537, 2002
English
ISSN：0272-9172, Web of Science ID：WOS:000179162400076

P-Doping into Strain-Induced Si_<1-y>C_y Epitaxial Films Grown by Low Temperature Chemical Vapor Deposition　　　　　　　　　　　　　　　
YAGI Shuhei; ABE Katsuya; OKABAYASHI Takashi; YAMADA Akira; KONAGAI Makoto
Volume：2001, First page：484, Last page：485, 25 Sep. 2001
English
CiNii Articles ID：10015753496, CiNii Books ID：AA10777858

プラズマCVD法によるSi_1-yC_y薄導へのPドーピング
八木修平; 阿部克也; 岡林尚志; 山田明; 小長井誠
応用物理学関係連合講演会講演予稿集, Volume：48th, Number：1, First page：460, 28 Mar. 2001
Japanese
J-Global ID：201202168097926110

SiH₂(CH₃)₂を用いたSi_1-yC_y薄膜の家温エピタキシャル成長
八木修平; 阿部克也; 岡林尚志; 山田明; 小長井誠
応用物理学会学術講演会講演予稿集, Volume：61st, Number：1, First page：336, 03 Sep. 2000
Japanese
J-Global ID：201202147608902773

非平衡CVD法により作製したSi_1-yC_y膜の構造評価
阿部克也; 八木修平; 岡林尚志; 山田明; 小長井誠
応用物理学会学術講演会講演予稿集, Volume：61st, Number：1, First page：336, 03 Sep. 2000
Japanese
J-Global ID：201202174940855751

低温形成Siエピタキシャル薄膜へのC添加の試み
八木修平; 阿部克也; 山田明; 小長井誠
応用物理学関係連合講演会講演予稿集, Volume：47th, Number：1, First page：409, 28 Mar. 2000
Japanese
J-Global ID：201202179484876018

MBE成長におけるIn表面偏析効果のモンテカルロシミュレーション
安田佳克; 八木修平; 山口浩一
応用物理学会学術講演会講演予稿集, Volume：60th, Number：3, First page：1113, 01 Sep. 1999
Japanese
J-Global ID：200902128553405317

■ Books and other publications

超高効率太陽電池・関連材料の最前線（荒川康彦監修）　　　　　　　　　　　　　　　
八木修平, [Contributor]

■ Teaching experience

Oct. 2020 - Present
Electrical Circuit, Saitama University

Apr. 2020 - Sep. 2021
理工学と現代社会

■ Affiliated academic society

Oct. 2020 - Present, The Japan Photovoltaic Society

■ Research projects

Improvement of the efficiency of photovoltaic cells using two-step optical absorption through band tail states　　　　　　　　　　　　　　　
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research, Grant-in-Aid for Scientific Research (C), 01 Apr. 2024 - 31 Mar. 2027
Saitama University
Grant amount(Total)：4550000, Direct funding：3500000, Indirect funding：1050000
Grant number：24K07574

A novel stacked structure of intermediate band cells for higher efficiency　　　　　　　　　　　　　　　
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), Grant-in-Aid for Scientific Research (C), 01 Apr. 2022 - 31 Mar. 2025
Saitama University
Grant amount(Total)：4160000, Direct funding：3200000, Indirect funding：960000
Grant number：22K04211
論文ID：49117072

Research on high-efficiency intermediate band tandem solar cells based on dilute nitride alloys　　　　　　　　　　　　　　　
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research, Fund for the Promotion of Joint International Research (Fostering Joint International Research), Apr. 2018 - Mar. 2020
Shuhei Yagi, Saitama University, Principal investigator
Tandem solar cells consisting of two stacked intermediate band solar cells (IBSCs) were investigated. Based on the detailed balance model, the conversion efficiency for various band gap combinations was calculated. As a result, it was found that the conversion efficiency of 53% under 1 Sun irradiation and 73% under maximum light concentration can be obtained by selecting the appropriate band gap combination. InGaAsN and GaPN alloys were proposed as candidate materials for the bottom IBSC and top IBSC, respectively. IBSCs using those alloys as the absorbing layer were fabricated and quantitatively evaluation of the current generation originating from the two-step photoabsorption through the intermediate band was carried out by measuring current response under multiple wavelength light irradiation.
Competitive research funding, Grant number：17KK0127

希釈窒化物半導体による高効率マルチバンド太陽電池の研究　　　　　　　　　　　　　　　
Apr. 2016 - Mar. 2019

Study on the Behavior of Defects in Dilute Nitride Semiconductors and Improvement of Device Reliability　　　　　　　　　　　　　　　
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research, Grant-in-Aid for Scientific Research (C), 01 Apr. 2014 - 31 Mar. 2017
Ueda Osamu; IKENAGA NORIAKI; YAGI SHUHEI, Kanazawa Institute of Technology
Grant amount(Total)：5070000, Direct funding：3900000, Indirect funding：1170000
In order to clarify degradation mechanism of optical devices fabricated from dilute nitride semiconductors such as GaInNAs, grown-in defects were characterized by transmission electron microscopy, and generation and multiplication of defects in the crystals under laser irradiation were investigated.
It has been shown that defects such as point defect clusters and dislocation loops are not generated in as-grown GaInNAs crystals. Furthermore, in the case of laser irradiation of GaInNAs/GaAs SQW structure, we have found that the emission efficiency increased for lower laser power density and that the emission efficiency drastically increased then decreased for higher power density. In both cases, no structural defects were newly generated by the laser irradiation. Further increase in the laser power density is required for detailed investigation of the degradation mechanism.
Grant number：26390057

窒化物半導体ナノ構造中のホットキャリアを利用する新型太陽電池に関する研究　　　　　　　　　　　　　　　
Dec. 2014 - Nov. 2015

局所ドーピング構造半導体による量子相関光子の生成および制御　　　　　　　　　　　　　　　
Apr. 2012 - Mar. 2015

窒化物量子ドット太陽電池の開発　　　　　　　　　　　　　　　
Nov. 2012 - Oct. 2013

Single Photon Generation from locally doped semiconductors　　　　　　　　　　　　　　　
Japan Society for the Promotion of Science, Grants-in-Aid for Scientific Research, Grant-in-Aid for Scientific Research (B), Apr. 2009 - Mar. 2011
YAGUCHI Hiroyuki; HIJIKATA Yasuto; ONABE Kentaro; KATAYAMA Ryuji; YAGI Shuhei; KUBOYA Shigeyuki; AKIYAMA Hidefumi, Saitama University
We have fabricated locally doped semiconductors using atomic layer doping to realize the generation of unpolarized single photons with highly reproducible wavelengths, which is essential in the field of quantum information technology, such as quantum cryptography. We have obtained unpolarized single photons by selecting a proper face of the substrate to grow nitrogen atomic layer doped semiconductors. In addition, we have successfully observed biexcition emission from nitrogen atomic layer doped semiconductors, which leads to the generation of entangled photon pairs.
Grant number：21360004

■ Industrial Property Rights

光起電力素子及びその製造方法　　　　　　　　　　　　　　　
Patent/Registration no：特許第5841231号
J-Global ID：201603019885568991

光起電力素子及びその製造方法　　　　　　　　　　　　　　　
J-Global ID：201503010382867768

光検出素子及び光検出方法　　　　　　　　　　　　　　　
J-Global ID：201303058776438657

可逆光応答素子を用いた並列アナログ演算装置　　　　　　　　　　　　　　　
Patent/Registration no：特許第5236173号
J-Global ID：201303078366538698

半導体とその製造方法　　　　　　　　　　　　　　　
Patent/Registration no：特許第5187761号
J-Global ID：201303069665849951

光透過フィルタを用いた画像出力装置及び並列アナログ演算装置　　　　　　　　　　　　　　　
Patent/Registration no：特許第5121198号
J-Global ID：201303003170113079

可逆光応答素子並びにそれを用いた撮像装置及び並列アナログ演算装置　　　　　　　　　　　　　　　
J-Global ID：200903049895238508

光透過フィルタ並びにそれを用いた画像出力装置及び並列アナログ演算装置　　　　　　　　　　　　　　　
J-Global ID：200903083194405497

半導体とその製造方法　　　　　　　　　　　　　　　
J-Global ID：201003020026758820

Mathematics, Electronics and Informatics Division	Associate Professor
Department of Electrical Engineering,Electronics, and Applied Physics

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YAGI ShuheiMathematics, Electronics and Informatics DivisionAssociate ProfessorDepartment of Electrical Engineering,Electronics, and Applied Physics

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Performance information

YAGI　Shuhei
Mathematics, Electronics and Informatics Division Associate Professor
Department of Electrical Engineering,Electronics, and Applied Physics