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UCHIDA Hidekazu
| Mathematics, Electronics and Informatics Division | Professor |
| Department of Electrical Engineering,Electronics, and Applied Physics |
Performance information
■ MISC- An Amperometric Sensor for Chemical Imaging Using Photoconductive Organic Film
Takuya Hagiwara; Masataka Takazawa; Hidekazu Uchida; Yuki Hasegawa; Tamaki Yaji
IEICE TRANSACTIONS ON ELECTRONICS, Volume：E91C, Number：12, First page：1863, Last page：1868, Dec. 2008
We have developed an amperometric sensor employing a photoconductive organic thin film that enables the measurement of the two-dimensional distribution of redox current on a sensor surface. The sensor simply consists of photoconductive film and transparent electrode. A focused light beam through the transparent electrode excites the photoconductive film that leads to detect local redox current at the beam position. Intensity of the redox current depends on local concentration of redox species of solution on the sensor. We investigated several materials for the photoconductive film and found a suitable structure is Cu-phthalocyanine doped polyvinylcarbazole film/indium tin oxide/glass substrate. Compared with a conventional two-dimensional chemical sensor, our newly developed sensor can he prepared by lower cost fabrication methods without complex semiconductor processes. The sensor showed a good signal dependence on the concentration of K3Fe(CN)(6)/K4Fe(CN)(6) in an aqueous solution at 15.4 nA/dec at a constant bias voltage of 0.8 V. We measured the two-dimensional distribution of ions in an agarose gel of 2 mm thickness. The result showed a photograph of the diffusion process of redox species. We also discuss the discrimination of redox species like voltammetry.
IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, English
DOI：https://doi.org/10.1093/ietele/e91-c.12.1863
DOI ID：10.1093/ietele/e91-c.12.1863, ISSN：0916-8524, eISSN：1745-1353, CiNii Articles ID：10026820340, Web of Science ID：WOS:000262010500007 - Development of high affinity peptides (peptide aptamers) for the seeds fordrug-discovery
Md. Salimullah
Volume：8, First page：31, Last page：31, 2007
Japanese
ISSN：1347-4758, CiNii Articles ID：120001371268 - 高速分子進化による高機能バイオ分子の創出（埼玉バイオプロジェクト）
西垣功一; 吉田昼也; 高橋進; 木下保則; 内田秀和; 北村幸一郎; 高橋陽子; 門脇知子; 山本健二
Volume：8, First page：30, Last page：30, 2007 - 医薬シーズとしての特異的結合性ペプチド（ペプチドアプタマー）の開発
西垣功一; Md. Salimullah; 二上雅恵; 木下保則; 内田秀和; 根本直人; 門脇知子; 山本健二
埼玉大学地域共同研究センター紀要, Volume：8, First page：31, Last page：31, 2007
Japanese
ISSN：1347-4758, CiNii Articles ID：120001371268 - 高速分子進化による高機能バイオ分子の創出（埼玉バイオプロジェクト）
西垣功一; 吉田昼也; 高橋進; 木下保則; 内田秀和; 北村幸一郎; 高橋陽子; 門脇知子; 山本健二
埼玉大学地域共同研究センター紀要, Volume：8, First page：30, Last page：30, 2007 - Creation of Highly Functional Biomolecules by Evolutionary Molecular Engineering (Saitama-Bio Project)
Md. Salimullah
Volume：7, First page：53, Last page：53, 2006
Japanese
ISSN：1347-4758, CiNii Articles ID：120001371310 - Fabrication and Measurement System for Microarray Using Digital Micromirror Device
N. Sato; Y. Hayashi; H. Uchida
First page：109, Last page：113, 2006 - 高速分子進化による高機能バイオ分子の創出（埼玉バイオプロジェクト）
西垣功一; 吉田昼也; 田山貴紘; 木下保則; 鈴木美穂; 内田秀和; 勝部昭明; 北村幸一郎; 高橋陽子; Md. Salimullah; 門脇知子; 山本健二
埼玉大学地域共同研究センター紀要, Volume：7, First page：53, Last page：53, 2006
Japanese
ISSN：1347-4758, CiNii Articles ID：120001371310 - Fabrication and Measurement System for Microarray Using Digital Micromirror Device
N. Sato; Y. Hayashi; H. Uchida
Proceedings of the 23rd Sensor Symposium, First page：109, Last page：113, 2006 - Generation of Functional Biomolecules By Evolutionary Molecular Engineering
MD. Salimullah
Volume：6, First page：83, Last page：83, 2005
Japanese
ISSN：1347-4758, CiNii Articles ID：120001371347 - 高速分子進化による高機能バイオ分子の創出（埼玉バイオプロジェクト）
西垣功一; 北村幸一郎; 高橋―; 本多陽子; 木下保則; 吉田昼也; MD. Salimullah; 鈴木美穂; 内田秀和; 勝部昭明
埼玉大学地域共同研究センター紀要, Volume：6, First page：83, Last page：83, 2005
Japanese
ISSN：1347-4758, CiNii Articles ID：120001371347 - Unsupervised scanning light pulse technique for chemical sensing
H Uchida; D Filippini; Lundstrom, I
SENSORS AND ACTUATORS B-CHEMICAL, Volume：103, Number：1-2, First page：225, Last page：232, Sep. 2004
A scanning light pulse technique (SLPT) operating in a totally unsupervised way suitable for chemical sensing and the efficient screening of new sensing materials is demonstrated. The procedure automatically determines inflexion points (optimum biasing condition) and photocurrent amplitudes from locally acquired i-V characteristics of metal-insulator-semiconductor structures that enables optimum biased measurements properly re-scaled to avoid spurious amplifying effects.
Additionally, the procedure allows composing flat-band voltage shift patterns within the same experiment, and avoiding feedback mode measurements. Optimum bias patterns when used to modulate subsequent measurements, allow a fast recording mode. (C) 2004 Elsevier B.V. All rights reserved.
ELSEVIER SCIENCE SA, English
DOI：https://doi.org/10.1016/j.snb.2004.04.054
DOI ID：10.1016/j.snb.2004.04.054, ISSN：0925-4005, Web of Science ID：WOS:000224064100035 - Gap-gate field effect gas sensing device for chemical image generation
D Filippini; Lundstrom, I; H Uchida
APPLIED PHYSICS LETTERS, Volume：84, Number：15, First page：2946, Last page：2948, Apr. 2004
A field effect chemically sensitive device, specially suited for the generation of scanning light pulse technique chemical images, is demonstrated. The present approach provides a complete separation between the required electrical biasing and chemical sensing functions inherently coupled in all previous systems. The concept is demonstrated by sensing hydrogen with insensitive biasing electrodes, composing a so-called gap gate, combined with discontinuous palladium clusters usually unsuitable for sensing in conventional arrangements. A simple one-dimensional model is used to explain the observed behavior. (C) 2004 American Institute of Physics.
AMER INST PHYSICS, English
DOI：https://doi.org/10.1063/1.1703838
DOI ID：10.1063/1.1703838, ISSN：0003-6951, CiNii Articles ID：80016608651, Web of Science ID：WOS:000220728100076 - Gas response and modeling of NO-sensitive thin-Pt SiC schottky diodes
SA Khan; EA de Vasconcelos; H Uchida; T Katsube
SENSORS AND ACTUATORS B-CHEMICAL, Volume：92, Number：1-2, First page：181, Last page：185, Jul. 2003
Thin-Pt SiC schottky diodes responding to NO gas concentrations from 500 down to 10 ppm at temperatures up to 400 degreesC were fabricated. The response followed a simple Langmuir adsorption model for all concentrations equal or superior to 100 ppm. From a linear correlation of the conductance (G) and current (1) in a G/I x G plot, it was possible to evaluate accurately the series resistance, ideality factor and barrier height changes of the devices due to exposure to NO gas, further confirming the model adopted as well as the quality of the devices. (C) 2003 Elsevier Science B.V. All rights reserved.
ELSEVIER SCIENCE SA, English
DOI：https://doi.org/10.1016/S0925-4005(03)00261-2
DOI ID：10.1016/S0925-4005(03)00261-2, ISSN：0925-4005, Web of Science ID：WOS:000183162200025 - An Application Possibility of Self-Ordered Mesoporous Silicate for Surface Photo Voltage (SPV) Type NO Gas Sensor (II) : Self-Ordered Mesoporous Silicate Incorporated SPV Device and Its Sensing Property Dependence on Mesostructure(Special Issue on Rece・・・
内田秀和
Volume：E85-C, Number：6, First page：1304, Last page：1310, 2002
An Application Possibility of Self-Ordered Mesoporous Silicate for Surface Photo Voltage (SPV) Type NO Gas Sensor (II) : Self-Ordered Mesoporous Silicate Incorporated SPV Device and Its Sensing Property Dependence on Mesostructure(Special Issue on Recent Progress in Organic Molecular Electronics) - An Application Possibility of Self-Ordered Mesoporous Silicate for Surface Photo Voltage Type NO Gas Sensor (I) : The Characterization of Nonionic Triblock Copolymer Templated Self-Ordered Mesoporous Silicates and Preparation Their Film for Device Appl・・・
内田秀和
Volume：E85-C, Number：6, First page：1298, Last page：1303, 2002
An Application Possibility of Self-Ordered Mesoporous Silicate for Surface Photo Voltage Type NO Gas Sensor (I) : The Characterization of Nonionic Triblock Copolymer Templated Self-Ordered Mesoporous Silicates and Preparation Their Film for Device Application(Special Issue on Recent Progress in Organic Molecular Electronics) - An Application Possibility of Self-Ordered Mesoporous Silicate for Surface Photo Voltage (SPV) Type NO Gas Sensor (II) : Self-Ordered Mesoporous Silicate Incorporated SPV Device and Its Sensing Property Dependence on Mesostructure(Special Issue on Rece・・・
内田秀和
IEICE transactions on electronics, Volume：E85-C, Number：6, First page：1304, Last page：1310, 2002
An Application Possibility of Self-Ordered Mesoporous Silicate for Surface Photo Voltage (SPV) Type NO Gas Sensor (II) : Self-Ordered Mesoporous Silicate Incorporated SPV Device and Its Sensing Property Dependence on Mesostructure(Special Issue on Recent Progress in Organic Molecular Electronics) - An Application Possibility of Self-Ordered Mesoporous Silicate for Surface Photo Voltage Type NO Gas Sensor (I) : The Characterization of Nonionic Triblock Copolymer Templated Self-Ordered Mesoporous Silicates and Preparation Their Film for Device Appl・・・
内田秀和
IEICE transactions on electronics, Volume：E85-C, Number：6, First page：1298, Last page：1303, 2002
An Application Possibility of Self-Ordered Mesoporous Silicate for Surface Photo Voltage Type NO Gas Sensor (I) : The Characterization of Nonionic Triblock Copolymer Templated Self-Ordered Mesoporous Silicates and Preparation Their Film for Device Application(Special Issue on Recent Progress in Organic Molecular Electronics) - NO Gas Sensor Based on Surface Photovoltage System Fabricated by Self-Ordered Hexagonal Mesoporous Silicate Film
H. S. Zhou; T. Yamada; K. Asai; I. Honma; H. Uchida; T. Katsube
Volume：40, Number：12, First page：7098, Last page：7102, 2001
DOI：https://doi.org/10.1143/JJAP.40.7098
DOI ID：10.1143/JJAP.40.7098, ISSN：0021-4922, CiNii Articles ID：30021823943 - NO Gas Sensor Based on Surface Photovoltage System Fabricated by Self-Ordered Hexagonal Mesoporous Silicate Film
H. S. Zhou; T. Yamada; K. Asai; I. Honma; H. Uchida; T. Katsube
Jpn. J. Appl. Phys., Volume：40, Number：12, First page：7098, Last page：7102, 2001
DOI：https://doi.org/10.1143/JJAP.40.7098
DOI ID：10.1143/JJAP.40.7098, ISSN：0021-4922, CiNii Articles ID：30021823943 - Novel type cholinesterase sensor based on SPV measurement technique
OV Fedosseeva; H Uchida; T Katsube; Y Ishimaru; T Iida
SENSORS AND ACTUATORS B-CHEMICAL, Volume：65, Number：1-3, First page：55, Last page：57, Jun. 2000
The surface photovoltage (SPV) technique was applied to the fabrication of a novel type biosensor based on immobilized cholinesterase. Two types of cholinesterase were utilized, acetylcholinesterase and butyrylcholinesterase, depending on the types of substrates. On the surface of the silicon wafer the cholinesterase layers were immobilized by using 3-aminopropyltriethoxysilane and glutaraldehyde. Characteristics of the sensor were studied in phosphate-buffered saline containing 15 mM NaCl and 1 mM phosphate buffer, pH 7.0. The detection limits of the substrates were 9.0 x 10(-7) M, 2.7 x 10(-6) M, and 4.1 x 10(-6) M for butyrylthiocholine iodide, acetylcholine iodide, and acetylcholine chloride, respectively. The activity of the cholinesterase was inhibited by the presence of alkaloids such as physostigmine and neostigmine. (C) 2000 Elsevier Science S.A. All rights reserved.
ELSEVIER SCIENCE SA, English
DOI：https://doi.org/10.1016/S0925-4005(99)00437-2
DOI ID：10.1016/S0925-4005(99)00437-2, ISSN：0925-4005, Web of Science ID：WOS:000088185800016 - A study of silicon Schottky diode structures for NOx gas detection
WY Zhang; EA de Vasconcelos; H Uchida; T Katsube; T Nakatsubo; Y Nishioka
SENSORS AND ACTUATORS B-CHEMICAL, Volume：65, Number：1-3, First page：154, Last page：156, Jun. 2000
A silicon Schottky diode structure was applied for detecting nitride oxide gases at room temperature. The Pt-Pd/Si/Al structure was employed successfully to detect NO2 gas concentration for as low as 6 ppm at room temperature. This sensor also showed useful response to NO gas, but the sensitivity was lower than its sensitivity to NO2 gas. Fabrication of the diode on a porous silicon surface enhances NO2 gas sensitivity, but the response time becomes longer. This structure provides a convenient technique to manufacture miniaturized and integrated sensors. (C) 2000 Elsevier Science S.A. All rights reserved.
ELSEVIER SCIENCE SA, English
DOI：https://doi.org/10.1016/S0925-4005(99)00466-9
DOI ID：10.1016/S0925-4005(99)00466-9, ISSN：0925-4005, Web of Science ID：WOS:000088185800045 - Highly sensitive semiconductor NOx gas sensor operating at room temperature
A Kunimoto; N Abe; H Uchida; T Katsube
SENSORS AND ACTUATORS B-CHEMICAL, Volume：65, Number：1-3, First page：122, Last page：124, Jun. 2000
The novel semiconductor NOx gas sensor based on a heterojunction structure workable at room temperature has been investigated. The sensor consists of Pt/Tin-dioxide(SnO2)/n-Si/p(+)-Si/Al in which vertical direction current between Pt and Al electrode was measured with applying reverse direction bias voltage on Pt electrode. All the films including SnO2 with the thickness of 50-200 nm were deposited on an epitaxial layer of n-Si over p(+)-Si substrate by RF sputtering method. As a result, the current in the sensor decreased when the gas flow was switched from dry air to mixed gas of air and NOx. Clear response was obtained at the NOx gas concentration as low as 1 ppm at room temperature, while the almost no response was observed for the n-Si, p-Si, and p-Si/n(+)-Si substrate. The generation of large change in current for the sensor was considered that the barrier height change or conductivity change of SnO2 gas sensitive layer may cause the modulation of the depletion layer at the n/p(+)-junction of Si substrate. (C) 2000 Elsevier Science S.A. All rights reserved.
ELSEVIER SCIENCE SA, English
DOI：https://doi.org/10.1016/S0925-4005(99)00440-2
DOI ID：10.1016/S0925-4005(99)00440-2, ISSN：0925-4005, Web of Science ID：WOS:000088185800036 - Highly sensitive thermistors based on high-purity polycrystalline cubic silicon carbide
EA de Vasconcelos; SA Khan; WY Zhang; H Uchida; T Katsube
SENSORS AND ACTUATORS A-PHYSICAL, Volume：83, Number：1-3, First page：167, Last page：171, May 2000
It is possible to fabricate highly sensitive thermistors using polycrystalline, intentionally undoped, chemical vapor deposition cubic SiC wafers. Resistance-temperature characteristics described by thermistor equations with thermistor constants around 7000 K from 25 degrees C to 200 degrees C and around 5000 K from 200 degrees C to 400 degrees C are presented (temperature coefficient of resistance at 25 degrees C = -7.9%/K). The influence of the fabrication process on thermistor characteristics as well as conduction mechanisms are discussed. (C) 2000 Elsevier Science S.A. All rights reserved.
ELSEVIER SCIENCE SA, English
DOI：https://doi.org/10.1016/S0924-4247(00)00351-4
DOI ID：10.1016/S0924-4247(00)00351-4, ISSN：0924-4247, Web of Science ID：WOS:000087144800027 - Cholinesterase-based biosensor using surface photovoltage technique
OV Fedosseeva; H Uchida; T Katsube; Y Ishimaru; T Iida
ELECTROCHEMISTRY, Volume：67, Number：7, First page：755, Last page：759, Jul. 1999
The new measurement method of Surface Photovoltage (SPV) technique was applied to the fabrication of a novel type cholinesterase-based biosensor. Cholinesterases (butyrylcholine esterase (BuChE) and acetylcholine esterase (AChE)) have been immobilized directly onto the semiconductor surface to measure the concentration of enzyme substrates, via pH changes. The detection limits of the substrates were 9.0 x 10(-7) M, 2.7 X 10(-6) M and 4.1 x 10(-6) M for butyrylthiocholine iodide, acetylcholine iodide and acetylcholine chloride, respectively. The analytical possibilities were examined from the results of the inhibiting actions exerted in the presence of alkaloids such as physostigmine sulfate and neostigmine bromide on BuChE.
ELECTROCHEMICAL SOC JAPAN, English
ISSN：1344-3542, Web of Science ID：WOS:000081506800004 - Dynamic photocurrent images of a gas sensing surface
Vasconcelos, E. A; Uchida, H; Zhang, W; Katsube, T
Volume：38, Number：5A, First page：2893, Last page：2898, 1999
DOI：https://doi.org/10.1143/JJAP.38.2893
DOI ID：10.1143/JJAP.38.2893, ISSN：0021-4922, CiNii Articles ID：110003907309 - Dynamic photocurrent images of a gas sensing surface
Vasconcelos, E. A; Uchida, H; Zhang, W; Katsube, T
Jpn. J.Appl. Phys, Volume：38, Number：5A, First page：2893, Last page：2898, 1999
DOI：https://doi.org/10.1143/JJAP.38.2893
DOI ID：10.1143/JJAP.38.2893, ISSN：0021-4922, CiNii Articles ID：110003907309 - High resolution chemical image sensor using a high-speed digital SPV measurement system
H Uchida; WY Zhang; H Maekawa; T Katsube
SENSORS AND MATERIALS, Volume：9, Number：5, First page：267, Last page：278, 1997
A high resolution and high-speed two-dimensional surface photovoltage (SPV) sensing system which is based on digital data processing was developed and applied to the in-situ monitoring of chemical images. The SPV signal generated by a scanning light beam was directly stored in a computer and signal integration of all measurement points was carried out simultaneously in allocated memories :by numerical calculation, which made it possible, in principle, to reduce the measurement time to equal the scanning time of the light beam. The light beam was modulated by a haversine (interleaved versed sine) wave in order to separate each measurement point signal and obtain a high resolution image. To form images of 16,384 data points, the proposed system requires about 4.5 min, which is at least two orders of magnitude faster than a conventional analog SPV system.
MYU, SCIENTIFIC PUBLISHING DIVISION, English
ISSN：0914-4935, Web of Science ID：WOS:A1997XY82200001 - High speed chemical image sensor with digital LAPS system
H Uchida; WY Zhang; T Katsube
SENSORS AND ACTUATORS B-CHEMICAL, Volume：34, Number：1-3, First page：446, Last page：449, Aug. 1996
A high speed two-dimensional surface photovoltage (SPV) sensing system based on a digital data processing was developed and applied to an in-situ monitoring of chemical images. The SPV signal generated by a scanning light spot was directly memorized in a computer and signal integration of all measurement points was carried out in parallel in allocated memories by numerical calculation, which made it possible in principle to reduce the measurement time as short as the scanning time of the light spot. For the formation of the image of 6400 data points, the proposed system needs about 30 min which is at least one order of magnitude faster than that of a conventional analog SPV system.
ELSEVIER SCIENCE SA LAUSANNE, English
DOI：https://doi.org/10.1016/S0925-4005(96)01939-9
DOI ID：10.1016/S0925-4005(96)01939-9, ISSN：0925-4005, CiNii Articles ID：80009334143, Web of Science ID：WOS:A1996WC20900042 - スピネル型構造をもつZn-Sn系複合酸化物薄膜のガス検知特性
平塚信之; 小林裕; 内田秀和; 勝部昭明
Volume：104, Number：1215, First page：1048, Last page：1051, 1996
DOI：https://doi.org/10.2109/jcersj.104.1048
DOI ID：10.2109/jcersj.104.1048 - High speed chemical image sensor with digital LAPS system
Uchida, H; Zhang, W.Y; Katsube, T
Sensors and Actuators B: Chemical, Volume：34, Number：1/3, First page：446, Last page：449, 1996
DOI：https://doi.org/10.1016/S0925-4005(96)01939-9
DOI ID：10.1016/S0925-4005(96)01939-9, ISSN：0925-4005, CiNii Articles ID：80009334143 - スピネル型構造をもつZn-Sn系複合酸化物薄膜のガス検知特性
平塚信之; 小林裕; 内田秀和; 勝部昭明
日本セラミックス協会学術論文誌, Volume：104, Number：1215, First page：1048, Last page：1051, 1996
DOI：https://doi.org/10.2109/jcersj.104.1048
DOI ID：10.2109/jcersj.104.1048 - HIGHLY SENSITIVE TASTE SENSOR WITH A NEW DIFFERENTIAL LAPS METHOD
Y SASAKI; Y KANAI; H UCHIDA; T KATSUBE
SENSORS AND ACTUATORS B-CHEMICAL, Volume：25, Number：1-3, First page：819, Last page：822, Apr. 1995
A new differential measurement method for a LAPS (light-addressable potentiometric sensor) has been developed and applied to fabricate an integrated taste sensor with artificial lipid membranes as the ion-sensitive material. The differential measurement procedure is based on a time-sharing technique, which makes it possible to achieve a very sensitive and highly stabilized response due to the noise-compensation effect. Sensitivity enhancement is further achieved by cancelling the base component of the differential response current. These techniques improve the sensitivity by at least two orders of magnitude compared to a conventional LAP system. The sensor shows highly sensitive responses to various taste substances, which makes it possible to identify a sweet taste through pattern-recognition routines. Miniaturization of the LAPS is also attained by using a small metal pseudo-reference electrode instead of a glass electrode.
ELSEVIER SCIENCE SA LAUSANNE, English
DOI：https://doi.org/10.1016/0925-4005(95)85182-8
DOI ID：10.1016/0925-4005(95)85182-8, ISSN：0925-4005, CiNii Articles ID：30004030910, Web of Science ID：WOS:A1995RN87000113
- 内田秀和 他113名 MEMS/NEMS工学全集
2009 - 内田秀和 他113名 MEMS/NEMS工学全集
テクノシステム, 2009 - 内田秀和 他122名 バイオセンサ・ケミカルセンサ事典
2007
ISBN：9784924728547 - 内田秀和 他122名 バイオセンサ・ケミカルセンサ事典
テクノシステム, 2007
ISBN：9784924728547
- 高密度マイクロリアクターセル分析システムの開発
2007 - 高密度マイクロリアクターセル分析システムの開発
2007 - 水晶振動子センサを用いた初期火災センシングシステムの開発
2007 - 高密度マイクロリアクターセル分析システムの開発
総合研究機構研究プロジェクト成果発表会 : ポスター展示, 2007 - 高密度マイクロリアクターセル分析システムの開発
総合研究機構研究プロジェクト研究成果報告書, 2007 - 水晶振動子センサを用いた初期火災センシングシステムの開発
電気学会研究会資料, 2007 - Fabrication and fluorescence measurement system for microarray using Digital Micromirror Device
2006 - 光導電性高分子薄膜を用いた新しい化学画像センサ
2006 - Fabrication and fluorescence measurement system for microarray using Digital Micromirror Device
電子情報通信学会技術研究報告, 2006 - 光導電性高分子薄膜を用いた新しい化学画像センサ
電子情報通信学会技術研究報告, 2006 - Dissolved gas image sensor using two dimensional SPV technique
1999 - Dissolved gas image sensor using two dimensional SPV technique
Transducers'99 The 10th Intern. Conference on Solid-State Sensors and Actuators, 1999
■ Research projects
- 有機光導電性薄膜を用いた化学センサ
2006
Competitive research funding - Chemical Sensors using Organic Photoconductive Film
Grants and Funding, 2006
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Competitive research funding - マイクロリアクターアレイの高速測定技術に関する研究
2003
Competitive research funding - -
Grants and Funding, 2003
-
Competitive research funding - 嗅覚センサ
2001
Competitive research funding - Odor Sensors
2001
-
Competitive research funding - 表面光電圧法を用いた化学センサ
1987 - 2000
Competitive research funding - Chemical Sensors using Surface Photovoltage Measurement
Grants and Funding, 1987 - 2000
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Competitive research funding